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    TPCS8213

    Abstract: No abstract text available
    Text: TPCS8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ TPCS8213 Lithium Ion Battery Applications Unit: mm • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 8.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)


    Original     		PDF TPCS8213 TPCS8213

    S8214

    Abstract: TPCS8214
    Text: TPCS8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPCS8214 Lithium Ion Battery Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 10.5mΩ (typ.) • High forward transfer admittance: |Yfs| = 10S (typ.)


    Original     		PDF TPCS8214 S8214 TPCS8214

    S8302

    Abstract: TPCS8302
    Text: TPCS8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPCS8302 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)


    Original     		PDF TPCS8302 S8302 TPCS8302

    s8208

    Abstract: TPCS8208
    Text: TPCS8208 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIII TPCS8208 ○ リチウムイオン 2 次電池用 • 単位: mm 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 13 mΩ (標準)


    Original     		PDF TPCS8208 s8208 TPCS8208

    s8211

    Abstract: TPCS8211
    Text: TPCS8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8211 Lithium Ion Battery Applications Note Book PC Portable Machines and Tools Unit: mm • Has a small footprint. • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		PDF TPCS8211 s8211 TPCS8211

    s8208

    Abstract: TPCS8208
    Text: TPCS8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8208 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.)


    Original     		PDF TPCS8208 s8208 TPCS8208

    TPCS8201

    Abstract: S8201
    Text: TPCS8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS II TPCS8201 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)


    Original     		PDF TPCS8201 TPCS8201 S8201

    a3180

    Abstract: TPCS8303 TPCS83
    Text: TPCS8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCS8303 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)


    Original     		PDF TPCS8303 a3180 TPCS8303 TPCS83

    s8204

    Abstract: TPCS8204 S-8204
    Text: TPCS8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8204 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.)


    Original     		PDF TPCS8204 s8204 TPCS8204 S-8204

    S8204

    Abstract: S-8204 TPCS8204
    Text: TPCS8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8204 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.)


    Original     		PDF TPCS8204 S8204 S-8204 TPCS8204

    s8211

    Abstract: TPCS8211
    Text: TPCS8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8211 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		PDF TPCS8211 s8211 TPCS8211

    s8210

    Abstract: A/s8210
    Text: TPCS8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8210 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.2 S (typ.)


    Original     		PDF TPCS8210 s8210 A/s8210

    3B marking

    Abstract: No abstract text available
    Text: TPCS8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅣ TPCS8303 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Machines and Tools • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)


    Original     		PDF TPCS8303 3B marking

    s8212

    Abstract: No abstract text available
    Text: TPCS8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8212 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.)


    Original     		PDF TPCS8212 s8212

    s8210

    Abstract: No abstract text available
    Text: TPCS8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8210 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.2 S (typ.)


    Original     		PDF TPCS8210 s8210

    TPCS8213

    Abstract: No abstract text available
    Text: TPCS8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ TPCS8213 Lithium Ion Battery Applications Unit: mm • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 8.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.)


    Original     		PDF TPCS8213 TPCS8213

    S8210

    Abstract: TPCS8210
    Text: TPCS8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8210 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) · High forward transfer admittance: |Yfs| = 9.2 S (typ.)


    Original     		PDF TPCS8210 S8210 TPCS8210

    s8211

    Abstract: TPCS8211 S-8211
    Text: TPCS8211 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIII TPCS8211 ○ リチウムイオン 2 次電池用 ○ ノートブック PC 用 ○ 携帯電子機器用 • 単位: mm 小型薄型で実装面積が小さい。


    Original     		PDF TPCS8211 s8211 TPCS8211 S-8211

    s8212

    Abstract: S-8212 TPCS8212
    Text: TPCS8212 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIII TPCS8212 ○ リチウムイオン 2 次電池用 • 単位: mm 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 16 mΩ (標準)


    Original     		PDF TPCS8212 s8212 S-8212 TPCS8212

    S8302

    Abstract: 3B MARKING
    Text: TPCS8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPCS8302 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)


    Original     		PDF TPCS8302 S8302 3B MARKING

    TPCS8211

    Abstract: S8211 S-8211A S-8211
    Text: TPCS8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8211 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)


    Original     		PDF TPCS8211 TPCS8211 S8211 S-8211A S-8211

    S8209

    Abstract: 357 MARKING
    Text: TPCS8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPCS8209 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.)


    Original     		PDF TPCS8209 S8209 357 MARKING

    Untitled

    Abstract: No abstract text available
    Text: TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS II TPCS8205 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Low drain-source ON resistance: RDS (ON) = 30 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.)


    Original     		PDF TPCS8205

    TPCS8213

    Abstract: S8213
    Text: TPCS8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ TPCS8213 Lithium Ion Battery Applications Unit: mm • Small footprint due to a small and thin package • • Low drain-source ON-resistance: R DS (ON) = 8.4 mΩ (typ.) High forward transfer admittance: |Yfs | = 13 S (typ.)


    Original     		PDF TPCS8213 TPCS8213 S8213