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    S8212 Price and Stock

    Diodes Incorporated ZXMS82120S14PQ-13

    HIGH SIDE INTELLIFET SO-14EP T&R
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    DigiKey ZXMS82120S14PQ-13 Digi-Reel 2,499 1
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    ZXMS82120S14PQ-13 Cut Tape 2,499 1
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    ZXMS82120S14PQ-13 Reel 2,500
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    New Advantage Corporation ZXMS82120S14PQ-13 2,500 1
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    Essentra Components SRS8-2-12-01

    BRD SPT SNAP LOCK SCREW MNT 3/4"
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    DigiKey SRS8-2-12-01 Bulk 2,000 1
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    Mouser Electronics SRS8-2-12-01
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    RS SRS8-2-12-01 Bulk 19 Weeks 1,000
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    DB Roberts SRS8-2-12-01
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    Bel Fuse SS-82120-003

    MOD JACK KEYSTONE CAT6A SHLD
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    DigiKey SS-82120-003 Box 873 1
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    Avnet Americas SS-82120-003 Bulk 8 Weeks, 6 Days 1
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    SS-82120-003 Bulk 8 Weeks 400
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    Newark SS-82120-003 Bulk 42 1
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    TME SS-82120-003 1
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    Avnet Abacus SS-82120-003 20 Weeks 400
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    IBS Electronics SS-82120-003 15
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    Bel Fuse SS-82120-001

    MOD JACK KEYSTONE CAT6A SHLD
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    DigiKey SS-82120-001 Box 208 1
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    Avnet Americas SS-82120-001 Bulk 9 Weeks, 3 Days 1
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    SS-82120-001 Tray 8 Weeks 280
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    Newark SS-82120-001 Bulk 19 1
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    Panduit Corp S8212BF

    800MMW X 42 RU X 1070MMD S-TYPE,
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    Onlinecomponents.com S8212BF
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    S8212 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    82123

    Abstract: No abstract text available
    Text: SPICE Device Model Si7888ADP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		Si7888ADP 18-Jul-08 82123 PDF

    7400 spice model

    Abstract: SiE726DF
    Text: SPICE Device Model SiE726DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		SiE726DF 18-Jul-08 7400 spice model PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR492DP Vishay Siliconix N-Channel 12-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		SiR492DP S-82126 15-Sep-08 PDF

    s8212

    Abstract: No abstract text available
    Text: S8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII S8212 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.)


    Original     		TPCS8212 s8212 PDF

    DIODE TA 70/04

    Abstract: SC-70-6
    Text: New Product SiA850DJ Vishay Siliconix N-Channel 190-V D-S MOSFET with 190-V Diode FEATURES PRODUCT SUMMARY ID (A)a 0.95 Qg (Typ.) 4.2 at VGS = 2.5 V 0.9 1.4 nC 17 at VGS = 1.8 V 0.3 VDS (V) RDS(on) (Ω) 190 3.8 at VGS = 4.5 V • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET


    Original     		SiA850DJ SC-70 SC-70-6 18-Jul-08 DIODE TA 70/04 PDF

    handbook of shipboard electromagnetic shielding practices

    Abstract: ASTM-A-753 MIL-B-857 MIL-STD-463 s41 hall effect sensor s41 hall effect sensor s41 s41 hall effect sensor S9300-AW-EDG-010 Bendix synchro control transformer MIL-C-915
    Text: S9407-AB-HBK-010 Revision 2 HANDBOOK OF SHIPBOARD ELECTROMAGNETIC SHIELDING PRACTICES This document supersedes S9407-AB-HBK-010, Revision 1 date published 30 September 1989 APPROVED FOR PUBLIC RELEASE; DISTRIBUTION IS UNLIMITED Published by Direction of Commander, Naval Sea Systems Command


    Original     		S9407-AB-HBK-010 S9407-AB-HBK-010, S9407-AB-HBK-010 03Z44, 05H31, 08K/CHABAY) PMS303A41, handbook of shipboard electromagnetic shielding practices ASTM-A-753 MIL-B-857 MIL-STD-463 s41 hall effect sensor s41 hall effect sensor s41 s41 hall effect sensor S9300-AW-EDG-010 Bendix synchro control transformer MIL-C-915 PDF

    s8212

    Abstract: S-8212 TPCS8212
    Text: S8212 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIII S8212 ○ リチウムイオン 2 次電池用 • 単位: mm 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 16 mΩ (標準)


    Original     		TPCS8212 s8212 S-8212 TPCS8212 PDF

    s8212

    Abstract: No abstract text available
    Text: SPICE Device Model SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		SiE860DF 18-Jul-08 s8212 PDF

    s8212

    Abstract: S-8212 TPCS8212
    Text: S8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII S8212 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.)


    Original     		TPCS8212 s8212 S-8212 TPCS8212 PDF

    S-8212

    Abstract: s8212
    Text: S8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII S8212 Lithium Ion Battery Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.)


    Original     		TPCS8212 S-8212 s8212 PDF

    si7716a

    Abstract: Si7716ADN S-82129 si7716
    Text: SPICE Device Model Si7716ADN Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		Si7716ADN 18-Jul-08 si7716a S-82129 si7716 PDF

    S-8212

    Abstract: No abstract text available
    Text: New Product Si7159DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 30d 0.0105 at VGS = - 4.5 V - 30d • • • • Qg (Typ.) 63 nC PowerPAK SO-8 COMPLIANT • Notebook Battery Charging


    Original     		Si7159DP Si7159DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 S-8212 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7159DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 30d 0.0105 at VGS = - 4.5 V - 30d • • • • Qg (Typ.) 63 nC PowerPAK SO-8 COMPLIANT • Notebook Battery Charging


    Original     		Si7159DP Si7159DP-T1-GE3 11-Mar-11 PDF

    SiS402DN

    Abstract: No abstract text available
    Text: SPICE Device Model SiS402DN Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		SiS402DN S-82124 15-Sep-08 PDF

    MDM 6600

    Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
    Text: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1


    Original     		9800-OERF-007 9800-OERF-005 MDM 6600 mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR492DP Vishay Siliconix N-Channel 12-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		SiR492DP 18-Jul-08 PDF

    sud50n04-8m8p

    Abstract: No abstract text available
    Text: SPICE Device Model SUD50N04-8m8P Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		SUD50N04-8m8P 18-Jul-08 sud50n04-8m8p PDF

    7400 spice model

    Abstract: SiE726DF d 1047 d 1047 transistor transistor equivalent book FOR D 1047 S-82127
    Text: SPICE Device Model SiE726DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		SiE726DF S-82127 15-Sep-08 7400 spice model d 1047 d 1047 transistor transistor equivalent book FOR D 1047 PDF

    sud50n04-8m8p

    Abstract: S-82125
    Text: SPICE Device Model SUD50N04-8m8P Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		SUD50N04-8m8P S-82125 15-Sep-08 sud50n04-8m8p PDF

    s8212

    Abstract: mosfet 0018 mosfet SPICE MODEL spice model AN 4470 mosfet 15-Sep-08 SIE860DF
    Text: SPICE Device Model SiE860DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		SiE860DF S-82128 15-Sep-08 s8212 mosfet 0018 mosfet SPICE MODEL spice model AN 4470 mosfet 15-Sep-08 PDF

    3227S

    Abstract: 82123 mosfet SPICE MODEL
    Text: SPICE Device Model Si7888ADP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		Si7888ADP S-82123-Rev. 15-Sep-08 3227S 82123 mosfet SPICE MODEL PDF

    Si7716ADN

    Abstract: No abstract text available
    Text: SPICE Device Model Si7716ADN Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		Si7716ADN S-82129-Rev. 15-Sep-08 PDF

    s8212

    Abstract: S-8212 tpcs8212
    Text: S8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII S8212 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.)


    Original     		TPCS8212 s8212 S-8212 tpcs8212 PDF

    s8212

    Abstract: TPCS8212
    Text: S8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII S8212 Lithium Ion Battery Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.)


    Original     		TPCS8212 s8212 TPCS8212 PDF