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    24.1 GHZ AMPLIFIER Search Results

    24.1 GHZ AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL59445IRZ-EVAL Renesas Electronics Corporation 1GHz Triple Multiplexing Amplifiers Evaluation Board Visit Renesas Electronics Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    ISL59445IRZ Renesas Electronics Corporation 1GHz Triple Multiplexing Amplifiers, QFN, /Tube Visit Renesas Electronics Corporation
    ISL59445IRZ-T13 Renesas Electronics Corporation 1GHz Triple Multiplexing Amplifiers, QFN, /Reel Visit Renesas Electronics Corporation
    ISL59445IRZ-T7 Renesas Electronics Corporation 1GHz Triple Multiplexing Amplifiers, QFN, /Reel Visit Renesas Electronics Corporation

    24.1 GHZ AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    H2 SOT-89 RF amplifier

    Abstract: H2 SOT-89 amplifier Coilcraft 0603HP
    Text: 30 MHz to 6 GHz RF/IF Gain Block ADL5545 Data Sheet FUNCTIONAL BLOCK DIAGRAM Fixed gain of 24.1 dB Broadband operation from 30 MHz to 6 GHz Input/output internally matched to 50 Ω Integrated bias control circuit OIP3 of 36.4 dBm at 900 MHz P1dB of 18.1 dBm at 900 MHz


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    PDF OT-89 ADL5545 ADL5545 O-243 OT-89] ADL5545ARKZ-R7 ADL5545-EVALZ OT-89, H2 SOT-89 RF amplifier H2 SOT-89 amplifier Coilcraft 0603HP

    Untitled

    Abstract: No abstract text available
    Text: 30 MHz to 6 GHz RF/IF Gain Block ADL5545 Data Sheet FUNCTIONAL BLOCK DIAGRAM Fixed gain of 24.1 dB Broadband operation from 30 MHz to 6 GHz Input/output internally matched to 50 Ω Integrated bias control circuit OIP3 of 36.4 dBm at 900 MHz P1dB of 18.1 dBm at 900 MHz


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    PDF ADL5545 OT-89 ADL5545 O-243 09-12-2013-C OT-89] ADL5545ARKZ-R7 ADL5545-EVALZ OT-89,

    SGA-5589

    Abstract: OPERATION AMPLIFIER FOR 40 MHZ BUFFER 24.1 GHz amplifier transistor A55
    Text: Preliminary Product Description SGA-5589 Stanford Microdevices’ SGA-5589 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.9V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


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    PDF SGA-5589 SGA-5589 50-ohm DC-4000 EDS-101443 OPERATION AMPLIFIER FOR 40 MHZ BUFFER 24.1 GHz amplifier transistor A55

    ze 003

    Abstract: 001-120 115-13 ZE 004 TGA6345-EEU
    Text: Product Data Sheet 2 - 18 GHz Gain Block Amplifier TGA6345-EEU Key Features and Performance • • • • • • 2 to 18 GHz Frequency Range 23 dB Typical Gain 1.6:1 Typical Input / Output SWR 22 dBm Typical Output Power at 1 dB Gain Compression 6 dB Typical Noise Figure


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    PDF TGA6345-EEU TGA6345-EEU 25-mil-length ze 003 001-120 115-13 ZE 004

    TGA6345-EEU

    Abstract: No abstract text available
    Text: Product Data Sheet June 7, 2001 2 - 18 GHz Gain Block Amplifier TGA6345-EEU Key Features and Performance • • • • • • 2 to 18 GHz Frequency Range 23 dB Typical Gain 1.6:1 Typical Input / Output SWR 22 dBm Typical Output Power at 1 dB Gain Compression


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    PDF TGA6345-EEU TGA6345-EEU 25-mil-length 3-400um 4-250um V4-125um

    Untitled

    Abstract: No abstract text available
    Text: Product Data Sheet Seprember 20, 2001 2 - 18 GHz Gain Block Amplifier TGA6345-EEU Key Features and Performance • • • • • • Chip Dimensions 3.175 mm x 4.140 mm 2 to 18 GHz Frequency Range 23 dB Typical Gain 1.6:1 Typical Input / Output SWR 22 dBm Typical Output Power at 1 dB


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    PDF TGA6345-EEU TGA6345-EEU 25-mil-length 3-400um 4-250um V4-125um

    TGA6345

    Abstract: 68w fet
    Text: Product Data Sheet August 5, 2008 2 - 18 GHz Gain Block Amplifier TGA6345 Key Features and Performance • • • • • • 2 to 18 GHz Frequency Range 23 dB Typical Gain 1.6:1 Typical Input / Output SWR 22 dBm Typical Output Power at 1 dB Gain Compression


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    PDF TGA6345 TGA6345 25-mil-length 3-400um 4-250um V4-125um 68w fet

    AMMC5023

    Abstract: AMMC-5023 AMMC-5023-W10 AMMC-5023-W50
    Text: Products > RF for Mobile, WLAN, mmW > mmW & microWave Devices > Amplifiers > AMMC-5023 AMMC-5023 23 GHz Low Noise Amplifier Description Avago's AMMC-5023 is a high gain, low noise amplifier that operates from 21 GHz to over 30 GHz. The device has good input and output match to 50


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    PDF AMMC-5023 AMMC-5023 AMMC-5023-W10 AMMC-5023-W50 AMMC5023 AMMC-5023-W10 AMMC-5023-W50

    001-120

    Abstract: TGA6345-EEU
    Text: Advance Product Information August 30, 2002 2 - 18 GHz Gain Block Amplifier TGA6345-EEU Key Features and Performance • • • • • • 2 to 18 GHz Frequency Range 23 dB Typical Gain 1.6:1 Typical Input / Output SWR 22 dBm Typical Output Power at 1 dB


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    PDF TGA6345-EEU TGA6345-EEU 001-120

    Untitled

    Abstract: No abstract text available
    Text: MODEL 1S1G4A M1, M2, M3 1 WATT CW 0.8 -4.2 GHz 160 School House Road, Souderton, PA 18964-9990 USA Phone 215-723-8181•FAX 215-723-5688 The Model 1S1G4A is a solid state, self-contained, air-cooled, broadband amplifier designed for applications where instantaneous bandwidth and high gain are required. Housed in a stylish


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    PDF wh180-264

    AC1486

    Abstract: AS1486
    Text: Rev. 5/10 900 TO 1400 MHz TO-8 CASCADABLE AMPLIFIER AC1486 AC1486 Typical Values Low Noise Figure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Performance Thin Film


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    PDF AC1486 AC1486 AS1486

    NE674

    Abstract: NE67400 NE67483B 0840 057 0615
    Text: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET NE67400 NE67483B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz 24 Noise Figure, NF dB • HIGH ASSOCIATED GAIN: GA = 10 dB TYP at f = 12 GHz


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    PDF NE67400 NE67483B NE674 24-Hour NE67400 NE67483B 0840 057 0615

    germanium transistor ac 129

    Abstract: SGA-3563
    Text: Preliminary Preliminary Product Description SGA-3563 Stanford Microdevices’ SGA-3563 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.2V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


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    PDF SGA-3563 SGA-3563 50-ohm DC-5000 EDS-101496 germanium transistor ac 129

    Untitled

    Abstract: No abstract text available
    Text: 2/99 AC1486 900 TO 1400 MHz TO-8 CASCADABLE AMPLIFIER AC1486 Typical Values Low Noise Figure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Performance Thin Film


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    PDF AC1486

    AS1486

    Abstract: No abstract text available
    Text: 2/99 AC1486 900 TO 1400 MHz TO-8 CASCADABLE AMPLIFIER AC1486 Typical Values Low Noise Figure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Performance Thin Film


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    PDF AC1486 AC1486 AS1486

    AS1486

    Abstract: No abstract text available
    Text: 2/99 AC1486 900 TO 1400 MHz TO-8 CASCADABLE AMPLIFIER AC1486 Typical Values Low Noise Figure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Performance Thin Film


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    PDF AC1486 AC1486 AS1486

    mmic a35

    Abstract: SGA-3586 Drivers for CATV Amplifiers
    Text: Preliminary Product Description SGA-3586 Stanford Microdevices’ SGA-3586 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


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    PDF SGA-3586 SGA-3586 50-ohm DC-5000 EDS-101382 mmic a35 Drivers for CATV Amplifiers

    SGA-3563

    Abstract: No abstract text available
    Text: Preliminary Preliminary SGA-3563 Product Description DC-5000 MHz, Silicon Germanium Cascadeable Gain Block Sirenza Microdevices’ SGA-3563 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.2V. This RFIC uses the latest Silicon


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    PDF SGA-3563 DC-5000 SGA-3563 50-ohm EDS-101496

    Untitled

    Abstract: No abstract text available
    Text: 2 to 18-GHz Frequency Range 23-dB Typical Gain 22-dBm Typical Output Power at 1-dB Gain Compression 1.6:1 Typical Input/Output SWR 6-dB Typical Noise Figure 4,140 x 3,175 x 0,102 mm 0.163 x 0.125 x 0.004 in. PHOTO ENLARGEMENT DESCRIPTION The Texas Instruments TGA6345-EEU is a monolithic amplifier which operates over the 2 to 18-G H z


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    PDF 18-GHz 23-dB 22-dBm TGA6345-EEU 23-dB, TGA6345-EEU

    Electronic warfare system

    Abstract: g 995
    Text: Gain Block Amplifier TGA6345-EEU 2 to 18-GHz Frequency Range 23-dB Typical Gain 22-dBm Typical Output Power at 1-dB Gain Compression 1.6:1 Typical Input/Output SWR 6-dB Typical Noise Figure 4,140 x 3,175 x 0,102 mm 0.163 x 0.125 x 0.004 in. PHOTO ENLARGEMENT


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    PDF TGA6345-EEU 18-GHz 23-dB 22-dBm TGA6345-EEU 23-dB, Electronic warfare system g 995

    AS1486

    Abstract: No abstract text available
    Text: T -C 2/99 ^ Jc n U E H H COMPONENTS fi A n i il o c Abi 4 0 0 n 900 T0 1400 MHz TO-8 CASCADABLE AMPLIFIER AC1486 Typical Values A C1486 1.1 dB 24.5 dB Low Noise Figure. High Gain. High Performance Thin Film Standard Size TO-8


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    PDF AC1486 C1486 AS1486

    WJ-CRA53

    Abstract: No abstract text available
    Text: WJ-RA53/SMRA53 1000 to 5000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRA-WIDE BANDWIDTH: 0.8-5.0 GHz TYP. HIGH GAIN: 21.0 dB (TYP.) LOW NOISE: 4.5 dB (TYP.) MEDIUM OUTPUT POWER: +11.5 dBm (TYP.) Outline Drawings RA53


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    PDF WJ-RA53/SMRA53 WJ-CRA53

    transistor NEC D 587

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4956 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.20 pF TYP.


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    PDF 2SC4956 2SC4956-T1 2SC4956-T2 2SC4956) CONNECTI50 transistor NEC D 587

    NE67483

    Abstract: 1595S
    Text: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES NE67400 NE67483B NOISE FIGURE, ASSO CIATED GAIN • LOW NO ISE FIGURE: N F = 1.4 dB TYP a t f = at 1 2 G H z • HIG H A S S O C IA T E D GAIN: G a = 10 dB TYP at f = 12 GHz CQ •a u. • G ATE W ID TH : WG = 280 nm


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    PDF NE67400 NE67483B IS12I IS12I NE67400, NE67483B NE67400 NE67483 1595S