H2 SOT-89 RF amplifier
Abstract: H2 SOT-89 amplifier Coilcraft 0603HP
Text: 30 MHz to 6 GHz RF/IF Gain Block ADL5545 Data Sheet FUNCTIONAL BLOCK DIAGRAM Fixed gain of 24.1 dB Broadband operation from 30 MHz to 6 GHz Input/output internally matched to 50 Ω Integrated bias control circuit OIP3 of 36.4 dBm at 900 MHz P1dB of 18.1 dBm at 900 MHz
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OT-89
ADL5545
ADL5545
O-243
OT-89]
ADL5545ARKZ-R7
ADL5545-EVALZ
OT-89,
H2 SOT-89 RF amplifier
H2 SOT-89 amplifier
Coilcraft 0603HP
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Untitled
Abstract: No abstract text available
Text: 30 MHz to 6 GHz RF/IF Gain Block ADL5545 Data Sheet FUNCTIONAL BLOCK DIAGRAM Fixed gain of 24.1 dB Broadband operation from 30 MHz to 6 GHz Input/output internally matched to 50 Ω Integrated bias control circuit OIP3 of 36.4 dBm at 900 MHz P1dB of 18.1 dBm at 900 MHz
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ADL5545
OT-89
ADL5545
O-243
09-12-2013-C
OT-89]
ADL5545ARKZ-R7
ADL5545-EVALZ
OT-89,
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SGA-5589
Abstract: OPERATION AMPLIFIER FOR 40 MHZ BUFFER 24.1 GHz amplifier transistor A55
Text: Preliminary Product Description SGA-5589 Stanford Microdevices’ SGA-5589 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.9V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-5589
SGA-5589
50-ohm
DC-4000
EDS-101443
OPERATION AMPLIFIER FOR 40 MHZ BUFFER
24.1 GHz amplifier
transistor A55
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ze 003
Abstract: 001-120 115-13 ZE 004 TGA6345-EEU
Text: Product Data Sheet 2 - 18 GHz Gain Block Amplifier TGA6345-EEU Key Features and Performance • • • • • • 2 to 18 GHz Frequency Range 23 dB Typical Gain 1.6:1 Typical Input / Output SWR 22 dBm Typical Output Power at 1 dB Gain Compression 6 dB Typical Noise Figure
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TGA6345-EEU
TGA6345-EEU
25-mil-length
ze 003
001-120
115-13
ZE 004
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TGA6345-EEU
Abstract: No abstract text available
Text: Product Data Sheet June 7, 2001 2 - 18 GHz Gain Block Amplifier TGA6345-EEU Key Features and Performance • • • • • • 2 to 18 GHz Frequency Range 23 dB Typical Gain 1.6:1 Typical Input / Output SWR 22 dBm Typical Output Power at 1 dB Gain Compression
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TGA6345-EEU
TGA6345-EEU
25-mil-length
3-400um
4-250um
V4-125um
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Untitled
Abstract: No abstract text available
Text: Product Data Sheet Seprember 20, 2001 2 - 18 GHz Gain Block Amplifier TGA6345-EEU Key Features and Performance • • • • • • Chip Dimensions 3.175 mm x 4.140 mm 2 to 18 GHz Frequency Range 23 dB Typical Gain 1.6:1 Typical Input / Output SWR 22 dBm Typical Output Power at 1 dB
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TGA6345-EEU
TGA6345-EEU
25-mil-length
3-400um
4-250um
V4-125um
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TGA6345
Abstract: 68w fet
Text: Product Data Sheet August 5, 2008 2 - 18 GHz Gain Block Amplifier TGA6345 Key Features and Performance • • • • • • 2 to 18 GHz Frequency Range 23 dB Typical Gain 1.6:1 Typical Input / Output SWR 22 dBm Typical Output Power at 1 dB Gain Compression
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TGA6345
TGA6345
25-mil-length
3-400um
4-250um
V4-125um
68w fet
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AMMC5023
Abstract: AMMC-5023 AMMC-5023-W10 AMMC-5023-W50
Text: Products > RF for Mobile, WLAN, mmW > mmW & microWave Devices > Amplifiers > AMMC-5023 AMMC-5023 23 GHz Low Noise Amplifier Description Avago's AMMC-5023 is a high gain, low noise amplifier that operates from 21 GHz to over 30 GHz. The device has good input and output match to 50
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AMMC-5023
AMMC-5023
AMMC-5023-W10
AMMC-5023-W50
AMMC5023
AMMC-5023-W10
AMMC-5023-W50
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001-120
Abstract: TGA6345-EEU
Text: Advance Product Information August 30, 2002 2 - 18 GHz Gain Block Amplifier TGA6345-EEU Key Features and Performance • • • • • • 2 to 18 GHz Frequency Range 23 dB Typical Gain 1.6:1 Typical Input / Output SWR 22 dBm Typical Output Power at 1 dB
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TGA6345-EEU
TGA6345-EEU
001-120
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Untitled
Abstract: No abstract text available
Text: MODEL 1S1G4A M1, M2, M3 1 WATT CW 0.8 -4.2 GHz 160 School House Road, Souderton, PA 18964-9990 USA Phone 215-723-8181•FAX 215-723-5688 The Model 1S1G4A is a solid state, self-contained, air-cooled, broadband amplifier designed for applications where instantaneous bandwidth and high gain are required. Housed in a stylish
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wh180-264
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AC1486
Abstract: AS1486
Text: Rev. 5/10 900 TO 1400 MHz TO-8 CASCADABLE AMPLIFIER AC1486 AC1486 Typical Values Low Noise Figure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Performance Thin Film
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AC1486
AC1486
AS1486
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NE674
Abstract: NE67400 NE67483B 0840 057 0615
Text: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET NE67400 NE67483B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz 24 Noise Figure, NF dB • HIGH ASSOCIATED GAIN: GA = 10 dB TYP at f = 12 GHz
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NE67400
NE67483B
NE674
24-Hour
NE67400
NE67483B
0840 057
0615
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germanium transistor ac 129
Abstract: SGA-3563
Text: Preliminary Preliminary Product Description SGA-3563 Stanford Microdevices SGA-3563 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.2V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-3563
SGA-3563
50-ohm
DC-5000
EDS-101496
germanium transistor ac 129
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Untitled
Abstract: No abstract text available
Text: 2/99 AC1486 900 TO 1400 MHz TO-8 CASCADABLE AMPLIFIER AC1486 Typical Values Low Noise Figure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Performance Thin Film
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AC1486
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AS1486
Abstract: No abstract text available
Text: 2/99 AC1486 900 TO 1400 MHz TO-8 CASCADABLE AMPLIFIER AC1486 Typical Values Low Noise Figure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Performance Thin Film
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AC1486
AC1486
AS1486
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AS1486
Abstract: No abstract text available
Text: 2/99 AC1486 900 TO 1400 MHz TO-8 CASCADABLE AMPLIFIER AC1486 Typical Values Low Noise Figure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High Performance Thin Film
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AC1486
AC1486
AS1486
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mmic a35
Abstract: SGA-3586 Drivers for CATV Amplifiers
Text: Preliminary Product Description SGA-3586 Stanford Microdevices’ SGA-3586 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-3586
SGA-3586
50-ohm
DC-5000
EDS-101382
mmic a35
Drivers for CATV Amplifiers
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SGA-3563
Abstract: No abstract text available
Text: Preliminary Preliminary SGA-3563 Product Description DC-5000 MHz, Silicon Germanium Cascadeable Gain Block Sirenza Microdevices SGA-3563 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.2V. This RFIC uses the latest Silicon
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SGA-3563
DC-5000
SGA-3563
50-ohm
EDS-101496
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Untitled
Abstract: No abstract text available
Text: 2 to 18-GHz Frequency Range 23-dB Typical Gain 22-dBm Typical Output Power at 1-dB Gain Compression 1.6:1 Typical Input/Output SWR 6-dB Typical Noise Figure 4,140 x 3,175 x 0,102 mm 0.163 x 0.125 x 0.004 in. PHOTO ENLARGEMENT DESCRIPTION The Texas Instruments TGA6345-EEU is a monolithic amplifier which operates over the 2 to 18-G H z
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18-GHz
23-dB
22-dBm
TGA6345-EEU
23-dB,
TGA6345-EEU
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Electronic warfare system
Abstract: g 995
Text: Gain Block Amplifier TGA6345-EEU 2 to 18-GHz Frequency Range 23-dB Typical Gain 22-dBm Typical Output Power at 1-dB Gain Compression 1.6:1 Typical Input/Output SWR 6-dB Typical Noise Figure 4,140 x 3,175 x 0,102 mm 0.163 x 0.125 x 0.004 in. PHOTO ENLARGEMENT
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TGA6345-EEU
18-GHz
23-dB
22-dBm
TGA6345-EEU
23-dB,
Electronic warfare system
g 995
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AS1486
Abstract: No abstract text available
Text: T -C 2/99 ^ Jc n U E H H COMPONENTS fi A n i il o c Abi 4 0 0 n 900 T0 1400 MHz TO-8 CASCADABLE AMPLIFIER AC1486 Typical Values A C1486 1.1 dB 24.5 dB Low Noise Figure. High Gain. High Performance Thin Film Standard Size TO-8
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AC1486
C1486
AS1486
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WJ-CRA53
Abstract: No abstract text available
Text: WJ-RA53/SMRA53 1000 to 5000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRA-WIDE BANDWIDTH: 0.8-5.0 GHz TYP. HIGH GAIN: 21.0 dB (TYP.) LOW NOISE: 4.5 dB (TYP.) MEDIUM OUTPUT POWER: +11.5 dBm (TYP.) Outline Drawings RA53
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WJ-RA53/SMRA53
WJ-CRA53
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transistor NEC D 587
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4956 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.20 pF TYP.
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2SC4956
2SC4956-T1
2SC4956-T2
2SC4956)
CONNECTI50
transistor NEC D 587
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NE67483
Abstract: 1595S
Text: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES NE67400 NE67483B NOISE FIGURE, ASSO CIATED GAIN • LOW NO ISE FIGURE: N F = 1.4 dB TYP a t f = at 1 2 G H z • HIG H A S S O C IA T E D GAIN: G a = 10 dB TYP at f = 12 GHz CQ •a u. • G ATE W ID TH : WG = 280 nm
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NE67400
NE67483B
IS12I
IS12I
NE67400,
NE67483B
NE67400
NE67483
1595S
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