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Infineon Technologies AG MB91F243PFV-GSE1 IC MCU 144LQFP
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DigiKey	MB91F243PFV-GSE1	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG MB91243PFV-GS-115 IC MCU 144LQFP
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DigiKey	MB91243PFV-GS-115	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG MB91243PFV-GS-107 IC MCU 144LQFP
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DigiKey	MB91243PFV-GS-107	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG MB4243PFV-GT-BNDE1 IC POWER MANAGEMENT 48LQFP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MB4243PFV-GT-BNDE1	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
JRH Electronics 806-039-Z118E24-3PF Circular connector
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DigiKey	806-039-Z118E24-3PF				1	1 $11359.73 10 $11359.73 100 $11359.73 1000 $11359.73 10000 $11359.73	Buy Now

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243PF Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
enamelled copper wire swg table Abstract: BS4808 BS4109 awm 2990 vw-1 30v shield cable specification BS4520 RG316DT swg copper wire 25 32 awm 20696 M55162 awm 2896 flat RIBBON CABLE Text: 1899 Technical portal and online community for Design Engineers - www.element-14.com Cable & Wire Audio Cable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Automotive Wire . . . . . . . . . . . . . . . . . . . . . . . . . . . Category 5, 6 & 7 Cable. . . . . . . . . . . . . . . . . . . . .	Original	PDF	element-14 enamelled copper wire swg table BS4808 BS4109 awm 2990 vw-1 30v shield cable specification BS4520 RG316DT swg copper wire 25 32 awm 20696 M55162 awm 2896 flat RIBBON CABLE
oscilloscope pc Abstract: BAS28 BAW62 Text: • bbS3S31 N AHER 0Q24B7Ö TS7 H A P X PHILIPS/DISCRETE b7E BAS28 D SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 consists o f tw o separate diodes in one m icro m in ia tu re envelope intended fo r surface m ou n tin g . It concerns fast-sw itching general-purpose diodes.	OCR Scan	PDF	bbS3S31 0Q24B7Ã BAS28 BAS28 oscilloscope pc BAW62
diode rj 93 Abstract: No abstract text available Text: bbSB^Bl DQ2b352 40b « A P X N AMER PHILIPS/PISCRETE blE D BAW62 y V HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a DO-35 envelope. The BAW62 is primarily intended for fast logic applications. QUICK REFERENCE DATA Continuous reverse voltage	OCR Scan	PDF	DQ2b352 BAW62 DO-35 BAW62 OD-27 DO-35) 7Z10519 D02b35e diode rj 93
RC4292 Abstract: raytheon ref Text: Section 9 RC4292 RC4292 Negative Switch Mode Power SupplyController Features • Converts a negative voltage into positive and/or negative voltages ■ Wide application voltage range: -20V minimum, -120V maximum ■ High efficiency: 70% typical ■ Adjustable output voltage	OCR Scan	PDF	RC4292 RC4292 -120V RC429 raytheon ref
a7p marking Abstract: marking A7p sot23 a7p Text: BAV99 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAV99 consists of tw o diodes in a m icrom iniature plastic envelope. The diodes are connected in series and the u n it is intended fo r high-speed switching in thick and th in -film circuits.	OCR Scan	PDF	BAV99 BAV99 243pF 510MO BAW62. a7p marking marking A7p sot23 a7p
Untitled Abstract: No abstract text available Text: • b b S B ' m 002432b S3T ■ APX P h ilip ^ e m ic o n d u c to re N AMER PHILIPS/DISCRETE b?E T> Product specification Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching	OCR Scan	PDF	002432b BAS678 243pF J10MO 7Z73212 7Z69086 BAW62
a1p diode Abstract: BAW62 SOT23 7Z65148 BAW56 BAW62 12p sot-23 a1p sot Text: 7110Ä5b DDbß3S7 17T M P H I N BAW56 7 V. SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAW56 consists of two diodes in a microminiature plastic envelope. The anodes are commoned and the unit is intended for high-speed switching in thick and thin-film circuits.	OCR Scan	PDF	BAW56 a1p diode BAW62 SOT23 7Z65148 BAW62 12p sot-23 a1p sot
TELEVISION EHT TRANSFORMERS Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31 Text: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes	OCR Scan	PDF	LCD01 TELEVISION EHT TRANSFORMERS BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Untitled Abstract: No abstract text available Text: BAS16 _ y \ _ SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Silicon epitaxial high-speed diode in a m icrom iniature plastic envelope. It is intended fo r high-speed switching in hybrid th ick and th in -film circuits.	OCR Scan	PDF	BAS16 243pF BAW62;
Untitled Abstract: No abstract text available Text: BAV70 . A SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAV70 consists o f two diodes in a microminiature plastic envelope. The cathodes are commoned and the unit is intended fo r high-speed switching in thick and thin-film circuits. QUICK REFERENCE DATA per diode	OCR Scan	PDF	BAV70 BAV70
BAV10 Abstract: BAW62 bu 11 apx Text: • bbSB'ìBl GOSbe1^ IDI * A P X N AMER PHILIPS/DISCRETE BAV10 b^E D > ULTRA-HIGH-SPEED DIODES Silicon planar epitaxial, u ltra -high-speed, high-conductance diode in a DO-35 envelope. The BAV10 is prim arily intended for core gating in very fast m em ories.	OCR Scan	PDF	BAV10 DO-35 BAV10 DO-35 100XL -00mA BAW62 bu 11 apx