RCZ1206
Abstract: No abstract text available
Text: M32159/07 Zero Ohm Chip Resistor Surface Mount, Jumper FEATURES PERFORMANCE Termination Material Maximum Resistance Maximum Current B/G 0.025 W 3.2A Maximum Power Rating C 0.040 W 2.5A U 0.125 W 1.4A 250 mW ENVIRONMENTAL PERFORMANCE Thermal Shock Low Temperature Operation
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M32159/07
MIL-PRF-55342
RCZ1206
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HVP250
Abstract: HVP25 diodes 10-25 h3 HVP10 HVP100
Text: Ultra High Voltage Resistors The content of this specification may change without notification 11/12/08 HVP Series - Up to 5 Gig ohm, 250 Watt and 300 KV DC Custom solutions are available. HOW TO ORDER HVP 100 7507 F B Buck Packing FEATURES Resistance Torrance
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resistor 22 ohm
Abstract: No abstract text available
Text: Module no:3116014 LabelId:3116014 Operator:Phoenix 19:06:21, Donnerstag, 28. Juni 2001 UK 5-R-C with Cermet trimming resistor 22 Ohm Terminal width 6.2 IEC rigid flexible 2 [mm ] solid Connection data stranded AWG 0.2-4 0.2-4 24-12 I U [A] [V] * 250 * 0.5 W at 70 °C
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10-pos.
resistor 22 ohm
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ULTRA HIGH VOLTAGE RESISTORS
Abstract: No abstract text available
Text: Ultra High Voltage Resistors HVP Series - Up to 5 Gig ohm, 250 Watt and 300 KV DC HOW TO ORDER HVP 100 7507 F B Buck Packing Resistance Torrance F = + 1% J = + 5% G = + 2% K= + 10% 0.05 5000 Resistance 1% = 4 Digits 2%, 5%, 10% = 3 Digits Rated Power W 5
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FQFP-16
Abstract: AM59-0028
Text: 250 mW L-Band Power Amplifier, 1.435 - 1.525 GHz Preliminary AM59-0028 V 1P.00 Features • • • • • OUTLINE DRAWING High Linear Gain: 32 dB typ. High Saturated Output Power: +24 dBm typ. High Power Added Efficiency: 34% typ. 50 Ohm Input/Output Matched
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AM59-0028
AM59-0028
FQFP-16
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L3220
Abstract: No abstract text available
Text: 250 mW L-Band Power Amplifier, 1.4 - 1.55 GHz Preliminary MA05515-DIE V 1P.00 Features • • • • • OUTLINE DRAWING High Linear Gain: 32 dB typ. High Saturated Output Power: +24 dBm typ. High Power Added Efficiency: 41% typ. 50 Ohm Input/Output Matched
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MA05515-DIE
MA05515-DIE
L3220
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Untitled
Abstract: No abstract text available
Text: 250 mW L-Band Power Amplifier, 1.4 - 1.55 GHz Preliminary MA05515D V 2P.00 Features • • • • • OUTLINE DRAWING High Linear Gain: 32 dB typ. High Saturated Output Power: +24 dBm typ. High Power Added Efficiency: 41% typ. 50 Ohm Input/Output Matched
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MA05515D
MA05515D
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MMIC POWER AMPLIFIER S-BAND
Abstract: No abstract text available
Text: 250 mW S-Band Power Amplifier, 2.2 - 2.4 GHz Preliminary MA05535D V 2P.00 Features • • • • OUTLINE DRAWING High Linear Gain: 29 dB typ. High Saturated Output Power: +24 dBm typ. 50 Ohm Input/Output Matched InGaP HBT Process Description M/A-COM’s MA05535D is a two-stage MMIC power
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MA05535D
MA05535D
MMIC POWER AMPLIFIER S-BAND
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MA05535-DIE
Abstract: MMIC s-band
Text: 250 mW S-Band Power Amplifier, 2.2 - 2.4 GHz Preliminary MA05535-DIE V 1P.00 Features • • • • OUTLINE DRAWING High Linear Gain: 29 dB typ. High Saturated Output Power: +24 dBm typ. 50 Ohm Input/Output Matched InGaP HBT Process Description M/A-COM’s MA05535-DIE is a two-stage MMIC
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MA05535-DIE
MA05535-DIE
MMIC s-band
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FQFP-16
Abstract: AM59-0029 AM59002
Text: 250 mW S-Band Power Amplifier, 2.2 - 2.4 GHz Preliminary AM59-0029 V 1P.00 Features • • • • OUTLINE DRAWING High Linear Gain: 29 dB typ. High Saturated Output Power: +24 dBm typ. 50 Ohm Input/Output Matched InGaP HBT Process Description M/A-COM’s AM59-0029 is a two-stage MMIC power
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AM59-0029
AM59-0029
FQFP-16
AM59002
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Untitled
Abstract: No abstract text available
Text: 250 mW S-Band Power Amplifier, 2.2 - 2.4 GHz Preliminary AM59-0029 V 1P.00 Features • • • • OUTLINE DRAWING High Linear Gain: 29 dB typ. High Saturated Output Power: +24 dBm typ. 50 Ohm Input/Output Matched InGaP HBT Process Description M/A-COM’s AM59-0029 is a two-stage MMIC power
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AM59-0029
AM59-0029
FQFP-16
bypassing20
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Untitled
Abstract: No abstract text available
Text: MOLDED SHIELDED INDUCTORS _ fln—— .- PF SERIES n 'i RESISTORS "CAPS S COILS * DELAY U N ES Indue. MH Q (Min.) Test Freq. (MHz) SRF Min. (MHz) DCR Max. (ohm) Rated Current (mA) 0.22 49 25 250 .067 1100 0.27 47 25 250 .11 855 0.33 46 25 250 .13
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100mH
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Untitled
Abstract: No abstract text available
Text: High Power Low Ohm ic Resistors m low ohmic foil Key features * 250 watts at 25°C with heatsinking * nickel chromium element * integral heatsinking * high energy absorption capability * internal fusing available * custom designed harness possibility * robust mechanical construction
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Untitled
Abstract: No abstract text available
Text: gf/MECDN f C 1 THE ENERGY SAVER ' FOR 2 3 YEARS 100 A FLIP-TOP CURRENT TRANSFORMER, P /N 53FT02 ELECTRICAL SPECIFICATIONS 100 A NOM. 250 A MAX. PRIMARY CURRENT: 1000:1 NOMINAL TURNS RATIO: 0 .1 0 0 V /A VOLT PER AMP RATIO AT 1 0 0 A. FOR 100 OHM LOAD VOLT PER AMP RATIO AT 10A, FOR 100 OHM LOAD:
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53FT02
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Untitled
Abstract: No abstract text available
Text: s im THE RESISTOR PEOPLE Diamond spiralled PRECISION, HIGH-VOLTAGE THICK FILM RESISTORS CGX SERIES • • • • 1/4 watt to 1 watt 500 K ohm to 15 gigohm range ±1%, ±2% or ±5% tolerance TC of 50, 100, 250 ppm/°C electroplated leads SPECIFICATIONS: p p p fl
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10lMto5000M
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IRF 543 MOSFET
Abstract: Diode c514 irf 9540A irf 2030 IRF 511 MOSfet 9540A irfp254 IRFP255 C514 fiat irf 2030 n
Text: HE D § 4055452 INTERNATIONAL r - J r - fiT □□□Ö75Ö 7 | Data Sheet No. PD-9.540A RECTIFIER TOR INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS • o IRFPS54 IRFP255 N-CHANIMEL Product Summary 250 Volt, 0.14 Ohm HEXFET
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4flS54SZ
O-247AC
C-513
IRFP254,
IRFP255
T-39-15
C-514
IRF 543 MOSFET
Diode c514
irf 9540A
irf 2030
IRF 511 MOSfet
9540A
irfp254
C514 fiat
irf 2030 n
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Untitled
Abstract: No abstract text available
Text: H E 0 I MÖSS4SE INTERNATIONAL ÜGDÖ74S 3 | Data Sheet No. PD-9.588A T-39-13 RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFP244 IRFP245 N-CHANNEL Product Summary 250 Volt, 0.28 Ohm HEXFET TO-247AC TO-3P Plastic Package
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T-39-13
IRFP244
IRFP245
O-247AC
C-497
IRFP244,
IRFP245
C-498
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irf244
Abstract: pd9528 irf244r
Text: 11E D I 4055452 Q QQTI Q1* ^ | Data Sheet No. PD-9.528A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IÖ R T-39-13 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRF2 4 4 IRF2 4 5 N-CHANNEL 250 Volt, 0.28 Ohm HEXFET T0-204AA TO-3 Hermetic Package
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T-39-13
T0-204AA
IRF244,
IRF245
irf244
pd9528
irf244r
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ec a063
Abstract: IRF254 6710 mosfet
Text: HE D I 4flSS4S2 OCICHIEO 7 | Data Sheet No. PD-9.589A INTERNATIONAL R E C T IF IE R T-39-13 INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE AND dv/dt RATED IRF254 IRF25S HEXFET TRANSISTORS iJ IM-CHAIMIMEL 250 Volt, 0.14 Ohm, HEXFET TO-204AE TO-3 Hermetic Package
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T-39-13
IRF254
IRF25S
O-204AE
IRF254,
IRF255
G-104
ec a063
6710 mosfet
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irf614
Abstract: irf615 diode c226 diode c225
Text: H E D I 4 A S 5 4 55 QQ0Ö474 4 | INTERNATIONAL Data Sheet No. PD-9.475A T~ S R ECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IO R IRF614 IRFG15 N-CHANNEL 250 Volt, 2.0 Ohm HEXFET T0-220AB Plastic Package The HEXFET technology is the key to International Rec
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IRF614
IRFG15
T0-220AB
we9-09
IRF614,
IRF615
1987r
C-228
diode c226
diode c225
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pj 67 diode
Abstract: pj 69 diode irf644 IRF64 pj 59 diode IRF645 IRF 54 pj 83 diode PJ 74 rectifier diode for max 250v 1.5A
Text: HE 0 | MÖSS4S2 □□□ÖS12 a I Data Sheet No. PD-9.527A INTERNATIONAL RE CT IFIER INTERNATIONAL RECTIFIER IO R T-39-15 REPETITIVE AVALANCHE AND dv/dt RATED IR F 6 44 IR F 6 4 5 HEXFET TRANSISTORS ;n N-CHANNEL 250 Volt, 0.28 Ohm HEXFET T0-220AB Plastic Package
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T-39-15
O-220AB
C-267
IRF644,
IRF645
0Q0A511
C-268
pj 67 diode
pj 69 diode
irf644
IRF64
pj 59 diode
IRF 54
pj 83 diode
PJ 74
rectifier diode for max 250v 1.5A
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Untitled
Abstract: No abstract text available
Text: TYPE SM AXIAL LEAD Type SM156 250 £2 ± 0.1% 1.5 W in-stock! Custom power 2-terminal styles available from: • 0.02 ohm to 4 Megs with tolerances to ±0.05% . • TCR char: 0±10ppm /°C. 100 ohms and above • Stability: To ±0.005%/yr. (Shelf Life) • Low EMF vs. copper lead construction.
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SM156
10ppm
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IRF624
Abstract: No abstract text available
Text: H E 0 I 4 ÖS S 4 S 2 0G0ÜMÖL T-39-11 0 | Data Sheet No. PD-9.472A INTERNATIONAL RECTIFIER IOR INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG2 4 IRF6 S 5 IM-CHAIMNEI. 250 Volt, 1.1 Ohm HEXFET T0-220AB Plastic Package The HEXFET technology is the key to International Rec
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T-39-11
T0-220AB
C-239
IRF624,
IRF625
C-240
IRF624
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Untitled
Abstract: No abstract text available
Text: £f?MECDN 'Zynfi' 1OOA CURRENT TRANSFORMER, P /N 5311 THE ENERGY SAVER FOR 23 YEARS ELECTRICAL SPECIFICATIONS 100 A NOM. 250 A MAX. 1000:1 NOMINAL 0 .1 0 0 V /A 0 .0 9 8 6 V /A 20 OHMS 4kV RMS PRIMARY CURRENT: TURNS RATIO: VOLT PER AMP RATIO AT 100 A, FOR 100 OHM LOAD:
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025IN
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