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ROHM Semiconductor BM2LE250FJ-CE2 AUTOMOTIVE IPD, 2CH LOW SIDE SWI
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BM2LE250FJ-CE2	Digi-Reel	2,381		1	1 $1.84 10 $1.173 100 $0.7958 1000 $0.58895 10000 $0.58895	Buy Now
	BM2LE250FJ-CE2	Cut Tape	2,381		1	1 $1.84 10 $1.173 100 $0.7958 1000 $0.58895 10000 $0.58895	Buy Now
	BM2LE250FJ-CE2	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.53593	Buy Now
Avnet Americas	BM2LE250FJ-CE2	Reel		21 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	BM2LE250FJ-CE2		5,000			1 - 10 - 100 - 1000 - 10000 $0.458	Buy Now
Newark	BM2LE250FJ-CE2	Cut Tape	80		1	1 $0.711 10 $0.711 100 $0.711 1000 $0.711 10000 $0.711	Buy Now
TTI	BM2LE250FJ-CE2	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.469	Buy Now

Chip1Stop	BM2LE250FJ-CE2	Cut Tape	15			1 - 10 $0.621 100 $0.621 1000 $0.621 10000 $0.621	Buy Now
Mallory Sonalert Products Inc SC250FJ BUZZER PIEZO 42.85MM PNL MNT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SC250FJ	Bulk			1	1 $79.93 10 $79.93 100 $79.93 1000 $79.93 10000 $79.93	Buy Now
Mouser Electronics	SC250FJ					1 $68.74 10 $65.89 100 $62.13 1000 $62.13 10000 $62.13	Get Quote
Newark	SC250FJ	Bulk			1	1 $83.92 10 $73.37 100 $62.82 1000 $62.82 10000 $62.82	Buy Now
Sager	SC250FJ				1	1 $65.69 10 $65.69 100 $63.94 1000 $63.94 10000 $63.94	Buy Now
Mallory Sonalert Products Inc SC250FJR BUZZER PIEZO 42.85MM PNL MNT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SC250FJR	Bulk			1	1 $76.47 10 $76.47 100 $76.47 1000 $76.47 10000 $76.47	Buy Now
Mouser Electronics	SC250FJR					1 $57.09 10 $57.09 100 $57.09 1000 $57.09 10000 $57.09	Get Quote
Newark	SC250FJR	Bulk			1	1 $79.94 10 $69.89 100 $59.84 1000 $59.84 10000 $59.84	Buy Now
Master Electronics	SC250FJR		24			1 $44.86 10 $42.62 100 $38.47 1000 $36.54 10000 $36.54	Buy Now
Sager	SC250FJR				1	1 $62.57 10 $62.57 100 $60.9 1000 $60.9 10000 $60.9	Buy Now
Vishay Sprague 39D306F250FJ6 CAP ALUM 30UF 250V AXIAL TH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	39D306F250FJ6	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies RH2502R250FJ01 RH-250 2.25 1% J01 - Bulk (Alt: RH2502R250FJ01)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RH2502R250FJ01	Bulk		12 Weeks	1	1 $571.875 10 $571.875 100 $571.875 1000 $571.875 10000 $571.875	Buy Now

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250FJ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
8832 Abstract: No abstract text available Text: ¡5 h a r r HM-QQ32 i s 32K x 8 Asynchronous CMOS Static RAM Module Features • • • • • • • • • • • • • Pinout TOP VIEW Full CMOS Six Transistor Memory Cell Low Standby Supply C u r re n t. 250fjA Low Operating Supply C u r r e n t. 15mA	OCR Scan	PDF	HM-QQ32 250fjA 180ns 8832
Untitled Abstract: No abstract text available Text: International I R Rectifier pd-9.h52d IRG4BC30U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter	OCR Scan	PDF	IRG4BC30U
9904A Abstract: No abstract text available Text: A N A LO G D E V IC E S Monolithic Synchronous Voltage-to-Frequency Converter 1 V - : 'J FEATURES Full-Scale Frequency (Up to 2MHz Set by External System Clock No Critical External Components Required Extremely Low Linearity Error (0.005% max at 100kHz FS, 0.02% max at 2MHz FS)	OCR Scan	PDF	100kHz 25ppm/ AD651 9904A
Untitled Abstract: No abstract text available Text: International IM] Rectifier PD - 9.783A IRGB430U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1for Current vs. Frequency curve	OCR Scan	PDF	IRGB430U O-220AB 0G20375 TQ-220AB 4ASS452 02037b
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC bME » • IRF9620/9621 /9622/9623 7 S b 4142 0D 12271 ‘H û «SMlSK P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure	OCR Scan	PDF	IRF9620/9621 IRF9622 F9621 IRF9620 IRF9621 IRF9623 IRF9620/9621Ã Q01E57b
Untitled Abstract: No abstract text available Text: • Low Cost ■ 12-Bit Serial Sampling ADC ■ 8-Pin NSOIC Plastic Package ■ Low Power including Automatic Shutdown: 250pA ■ Programmable Input Configuration: Full differential or 2 channel single-ended ■ Single Suppply 3.0V to 5.5V operation ■ Half Duplex Digital Serial Interface	OCR Scan	PDF	12-Bit 250pA SP8538 TheSP8538 BBIgr/SP9838/9410R0
F9222 Abstract: IRF9220 f 9222 l ir 9621 f9223 IRF9222 F9222 L F9222 T IRFP9620 IRFP9220 Text: IRF9620/9621 /9622/9623 IRFP9220/9221 /9222/9223 IRF9220/92211922219223 P-CHANNEL POWER MOSFETS FEATURES • Low er R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysiiicon gate cell structure Lower input capacitance	OCR Scan	PDF	IRF9620/9621 IRFP9220/9221 IRF9220/9221 F9620/IR IRF9220 IRF9621 /IRFP9221 IRF9221 F9622/IR IRF9222 F9222 f 9222 l ir 9621 f9223 F9222 L F9222 T IRFP9620 IRFP9220
irf9540 Abstract: l 9143 irfp9140 IRFP9143 IRF9540 mosfet IRF9541 9142 ha 9141 9143 15a 50v p-channel mosfet Text: SAMSUNG ELSTC^ONTCS IN C h4 E D WÊ 7 T b m M 2 IK I-y ö 4 Ü /»ö4 1 /y ö 4 2 /9 5 4 3 IRFP9140/914179142/9143 FEATURES • • • • • • • □□122bG GG E • SI1GK P-CHANNEL POWER MOSFETS TO-220 Lower Rds ON Improved inductive ruggedness Fast switching times	OCR Scan	PDF	41/y542/9543 IRFP9140/9141 -100V IRF9541/Ã RFP9141 IRF9542/IRFP9142 IRF9543/IRFP9143 O-220 irf9540 l 9143 irfp9140 IRFP9143 IRF9540 mosfet IRF9541 9142 ha 9141 9143 15a 50v p-channel mosfet
IRF820 Abstract: IRF820.821 IRF822 Text: N-CHANNEL POWER MOSFETS IRF820/821/822/823 FEATURES • Low er R ds <on > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	PDF	IRF820/821/822/823 IRF820 IRF821 IRF822 IRF823 IRF820.821
3171S Abstract: No abstract text available Text: KM29V16000ARS Flash ELECTRONICS 2 M x 8 B i t NAND Flash Memory GENERAL DESCRIPTION FEATURES The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Single 3.3 - volt Supply • Organization - Memory Cell Array : (2M +64K)bit - Data Register Flash memory with a spare 64K(65,536)x8 bit. Its NAND	OCR Scan	PDF	KM29V16000ARS KM29V16000ATS/RS 264-byte 250fjs 003172R -TSOP2-400F -TSOP2-400R 3171S
IRf 444 MOSFET Abstract: DIODE Z32 irf9z34 IRF9Z30 irf9z34 mosfet IRF z34 MOSFET IRF high current p-channel P-channel power mosfet irf IRF9Z35 IRf 444 Text: SAMSUNG ELECTRONICS INC fc^E D • 7^4142 IRF9Z34/Z35 IRF9Z30/Z32 □ □ 1 2 2 Iìc T77 M S U G K P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds <on > Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure	OCR Scan	PDF	IRF9Z34/Z35 IRF9Z30/Z32 IRF9Z30 IRF9Z34 IRF9Z32 IRF9Z35 IRf 444 MOSFET DIODE Z32 irf9z34 mosfet IRF z34 MOSFET IRF high current p-channel P-channel power mosfet irf IRf 444
IRFI620G Abstract: irfi620 Text: PD-9.832 International S Rectifier IRFI620G HEXFET Power M OSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance VDSS = 200V ^DS on - 0 - 8 0 ^ lD - 4.1 A	OCR Scan	PDF	IRFI620G O-220 IRFI620G irfi620
Untitled Abstract: No abstract text available Text: D r w C .3 7 6 YA H ADVANCE INFORMATION Radiation Hardened Regulating Pulse Width Modulator Features Applications • Com plete PWM Power Control Circuitry • Positive Switching Regulators • • • • • • • • • Frequency Adjustable t o .290KHZ	OCR Scan	PDF	290KHZ -3761R
Untitled Abstract: No abstract text available Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED "PROPRIETARY" TO DEL FOSE INC, AND SHALL NET DE COPIED, REPRDDOCED OR DISCLOSED VITHOOT THE VRITTEN APPROVAL OF DEL FUSE INC, LEDI P E LA R IT Y PIN 13 - PIN 14 + PIN 15 ERPPN - E LECTRIC AL CHARACTERISTICS PIN 16	OCR Scan	PDF	250fjH 65MHz 65MHz 100MHz 100MHz 125MHz TRP27 DC002 L8E3-1G1T-43

IRF1630 Abstract: irf1630g IRF163 1RF16 59-A IRFI630G 9652A Text: PD-9.652A International SS Rectifier IRFI630G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS ® Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance ^DSS - 200V ^DS on = 0 - 4 0 0 lD = 5.9A	OCR Scan	PDF	IRFI630G RF1630G IRF1630 irf1630g IRF163 1RF16 59-A 9652A
Diode 224 Abstract: BFC14 DIODE 224# Text: BFC14 SEME LAB 4TH GENERATION MOSFET SOT-227 Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS 11 8 (0 4 6 3 ) ^ 2 2 (0 4 8 0 ^ I 9 (0 3 5 0 ) 9 6 (0 3 7 6 Ï- Y ' H ex N u t M 4 (4 places) ii 1- f 4 0 (0 1 5 7 }	OCR Scan	PDF	BFC14 OT-227 MIL-STD-750 Diode 224 DIODE 224#
Untitled Abstract: No abstract text available Text: CI RC UI T A S S E M B L Y CORP b^E D • 2133756 D D O n i S T3b « C A C -CD IDC DIP PLUG Features Pin 1 to conductor 1 construction Mass-terminates with .050 [1.27] center cable Ideal alternative to a soldered DIP interconnect Long tail version mates with	OCR Scan	PDF	UL94V-0 250fj CA-14IDP-1T CA-14IDP-2B CA-16IDP-1T CA-16IDP-2B CA-24IDP-1T CA-24IDP-2B CA-40IDP-1T CA-40IDP-2B
Untitled Abstract: No abstract text available Text: CIR C UI T A S S E M B L Y CORP b'ÏE D • 5 1 3 3 7 5 a Q Q Q l ^ l ? Û0R H C A C IDC SUM LINE PLUG Features Mass-terminates with .050 [1.27] center cable Able to be soldered directly to P.C.B Specifications Environmental ji Temperature Range: -55°C to +120°C	OCR Scan	PDF	UL94V-0 250fj CA-40IDPSL-1T CA-40IDPSL-1B CA-50IDPSL-1T CA-50IDPSL-1B CA-60IDPSL-1T CA-60IDPSL-1B CA-64IDPSL-1T CA-64IDPSL-1B
CHN 535 Abstract: No abstract text available Text: Single Output UNR Series Non-Isolated, 3.3V 8-40 Watt, DC/DC Converters Features N ew lo w -vo ltag e m ic ro p ro c e s s o r a nd m e m o ry ch ip s are d rivin g th e m ig ra tio n from ce n tra lize d to d istrib u te d p o w e r p ro ce ssin g in m od e rn te le c o m m u n ic a tio n and	OCR Scan	PDF	t10/15W 20MHz 10-pin CHN 535
YTF820 Abstract: No abstract text available Text: YTF820 FELD EFFECT TRANSISTOR_ SILICON N CHANNEL MOS TYPE {»-MOS II INDUSTRIAL APPLICATIONS Unit in m m HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. 10.3 MAX. . 03.6 ±0.2 C HOPPER REGULATOR, DC-DC C O NVERTER AND MOTOR DRIVE APPLICATIONS.	OCR Scan	PDF	YTF820 250fjA YTF820
AmZ8530 Abstract: No abstract text available Text: AmZ8030 • AmZ8530 SCC S e ria l Communications C o n tro lle r DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • Two IM .b p s full duplex serial channels Each channel has independent oscillator, baud-rate generator, and PLL for clock recovery, dram atically re	OCR Scan	PDF	AmZ8030 AmZ8530 CRC-16 Z8000* AmZ8030/AmZ8530
Supersot6 Abstract: ld32a NDC651N 55sc Text: National • Semiconductor" March 1996 NDC651N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description ■ 3.2A, 30V. Ft,*, , = 0.09£1 @ VGS = 4.5V R d sio n i = 0 .0 6 0 @ VGS = 10V. These N-Channel logic level enhancement mode	OCR Scan	PDF	NDC651N bSD113D Supersot6 ld32a NDC651N 55sc
D-12 Abstract: IRGBC20U 12FFL Text: P D - 9.681 A International S Rectifier IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency {over 5kHz See Fig. 1 for Current vs. Frequency curve	OCR Scan	PDF	IRGBC20U O-220AB D-12 12FFL
diode 4j Abstract: No abstract text available Text: P D - 9 .1 4 1 0 A International IOR Rectifier IRFP044N H E X F E T Pow er M O S F E T • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Voss = 55 V ^DS on = 0 .0 2 0 Q	OCR Scan	PDF	IRFP044N O-247 diode 4j

250FJ Search Results

250FJ Price and Stock

ROHM Semiconductor BM2LE250FJ-CE2

Mallory Sonalert Products Inc SC250FJ

Mallory Sonalert Products Inc SC250FJR

Vishay Sprague 39D306F250FJ6

Vishay Intertechnologies RH2502R250FJ01

250FJ Datasheets Context Search

8832

Untitled

9904A

Untitled

Untitled

Untitled

F9222

irf9540

IRF820

3171S

IRf 444 MOSFET

IRFI620G

Untitled

Untitled

IRF1630

Diode 224

Untitled

Untitled

CHN 535

YTF820

AmZ8530

Supersot6

D-12

diode 4j