GVT71128DA36
Abstract: GVT71256DA18
Text: ADVANCE INFORMATION GALVANTECH, INC. GVT71128DA36/GVT71256DA18 128K X 36/256K X 18 SYNCHRONOUS SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 128K x 36 SRAM 256K x 18 SRAM +3.3V SUPPLY, FULLY REGISTERED FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family
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GVT71128DA36/GVT71256DA18
36/256K
GVT71128DA36
GVT71256DA18
072x36
144x18
71128DA36
71256DA18
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GVT71256D18
Abstract: No abstract text available
Text: GALVANTECH, INC. GVT71256D18 256K X 18 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 256K x 18 SRAM +3.3V SUPPLY, FULLY REGISTERED INPUTS AND OUTPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family
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GVT71256D18
GVT71256D18
144x18
71256D18
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GVT71256G18
Abstract: No abstract text available
Text: GALVANTECH, INC. GVT71256G18 256K X 18 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 256K x 18 SRAM +3.3V CORE SUPPLY, +2.5V I/O SUPPLY FULLY REGISTERED, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family
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GVT71256G18
GVT71256G18
144x18
71256G18
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GVT71256G18
Abstract: No abstract text available
Text: GALVANTECH, INC. GVT71256G18 256K X 18 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 256K x 18 SRAM +3.3V CORE SUPPLY, +2.5V I/O SUPPLY FULLY REGISTERED, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family
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GVT71256G18
GVT71256G18
144x18
71256G18
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GVT71256F18
Abstract: No abstract text available
Text: GALVANTECH, INC. GVT71256F18 256K X 18 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 256K x 18 SRAM +3.3V CORE SUPPLY, +2.5V I/O SUPPLY FULLY REGISTERED, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family
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GVT71256F18
GVT71256F18
144x18
71256F18
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GVT71256T18
Abstract: DQ974
Text: ADVANCE INFORMATION GALVANTECH, INC. SYNCHRONOUS CACHE TAG SRAM PIPELINED OUTPUT GVT71256T18 256K X 18 SYNCHRONOUS TAG SRAM 256K x 18 SRAM +3.3V SUPPLY WITH CLOCKED REGISTERED INPUTS FEATURES GENERAL DESCRIPTION • • • • • • The Galvantech Synchronous Burst SRAM family
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GVT71256T18
71256T18
access/10ns
GVT71256T18
DQ974
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GVT71256B18
Abstract: No abstract text available
Text: GALVANTECH, INC. GVT71256B18 256K X 18 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM FLOW-THROUGH 256K x 18 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • • • • • The Galvantech Synchronous Burst SRAM family
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GVT71256B18
GVT71256B18
144x18
71256B18
access/10ns
access/11ns
access/20ns
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GVT71256B18
Abstract: No abstract text available
Text: GALVANTECH, INC. GVT71256B18 256K X 18 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM FLOW-THROUGH 256K x 18 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • • • • • The Galvantech Synchronous Burst SRAM family
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GVT71256B18
GVT71256B18
144x18
71256B18
access/10ns
access/11ns
access/20ns
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LH52256CN-85LL
Abstract: LH525C8N
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH52256CN-85LL 256K SRAM Model No.: LH525C8N Spec No.: EL081072A Issue Date: May 24, 1996 STATIC SRAM RAM Random Access Memory Low Power SOP LH52256CN-85LL CMOS 256K (32K x 8)
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LH52256CN-85LL
LH525C8N)
EL081072A
LH52256CN-85LL
LH525C8N
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CE1X
Abstract: fast sram 100mhz CE2Y GALVANTECH
Text: ADVANCE INFORMATION GALVANTECH, INC. DUAL I/O DUAL ADDRESS SYNCHRONOUS SRAM GVT81256P36/GVT81128P36 256K/128K X 36 PIPELINED SRAM 256K/128K X 36 SRAM +3.3V SUPPLY, FULLY REGISTERED TWO BI-DIRECTIONAL DATA BUSES FEATURES GENERAL DESCRIPTION • • • •
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GVT81256P36/GVT81128P36
256K/128K
GVT81256P36/GVT81128P36
144x36/131
072x36
81256P36
CE1X
fast sram 100mhz
CE2Y
GALVANTECH
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GVT71256E18
Abstract: No abstract text available
Text: GALVANTECH, INC. GVT71256E18 256K X 18 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM FLOW-THROUGH 256K x 18 SRAM +3.3V CORE SUPPLY, +2.5V I/O SUPPLY REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The Galvantech Synchronous Burst SRAM family
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GVT71256E18
GVT71256E18
144x18
71256E18
access/10ns
access/11ns
access/20ns
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GVT71256E18
Abstract: No abstract text available
Text: GALVANTECH, INC. GVT71256E18 256K X 18 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM FLOW-THROUGH 256K x 18 SRAM +3.3V CORE SUPPLY, +2.5V I/O SUPPLY REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The Galvantech Synchronous Burst SRAM family
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GVT71256E18
GVT71256E18
144x18
71256E18
access/10ns
access/11ns
access/20ns
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BY 199 equivalent
Abstract: "clock collision"
Text: ADVANCE INFORMATION GALVANTECH, INC. DUAL PORT SYNCHRONOUS SRAM GVT81256K36/GVT81128K36 256K/128K X 36 DUAL PORT SRAM 256K/128K X 36 SRAM +3.3V SUPPLY, FULLY REGISTERED TWO BI-DIRECTIONAL DATA BUSES FEATURES GENERAL DESCRIPTION • • • • • • •
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GVT81256K36/GVT81128K36
256K/128K
GVT81256K36/GVT81128K36
144x36/131
072x36
81256K36
BY 199 equivalent
"clock collision"
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bga 6x8
Abstract: A62S8316
Text: A62S8316 Series Preliminary 256K X 16 BIT LOW VOLTAGE CMOS SRAM Document Title 256K X 16 BIT LOW VOLTAGE CMOS SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue February 12, 2001 Preliminary February, 2001, Version 0.0
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A62S8316
A62S8316-S
A62S8316-SI
bga 6x8
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DPS256X36L
Abstract: No abstract text available
Text: 1Mx9/512Kx18/256Kx36, 20 - 45ns, ZIP 30A112-00 A 9 Megabit CMOS SRAM DPS256X36L DESCRIPTION: The DPS256X36L is a 256K X 36 high-density, low-power static RAM module comprised of eight 256K X 4 and four 256K x 1 monolithic SRAM’s and decoupling capacitors surface mounted on a FR-4
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1Mx9/512Kx18/256Kx36,
30A112-00
DPS256X36L
DPS256X36L
500mV
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY |V|IC=RON 256K SRAM MODULE X MT8LS25632 32 SRAM MODULE 256K X 32 SRAM LOW VOLTAGE FEATURES • High speed: 17,20 and 25ns • High-density 1MB design • High-performance, low-power, CMOS double-metal process • Single +3.3V ± 0.3V power supply
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MT8LS25632
64-Pin
DDlG57b
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Untitled
Abstract: No abstract text available
Text: MICRON 256K SRAM MODULE X MT8S25632 32 SRAM MODULE 256K x 32 SRAM FEATURES • High speed: 15,20 and 25ns • High-density 1MB design • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply _ • Easy memory expansion with CE and OE functions
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MT8S25632
64-Pin
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Untitled
Abstract: No abstract text available
Text: MICRON SEM ICO NDUCTOR INC b'IE D • blll54T □ □□Tia'I 141 H M R N 256K SRAM 1DIE SEMICONDUCTOR, INC- SRAM DIE 256K SRAM 256K X 1, 64K X 4, 32K x 8 FEATURES • • • • DIE OUTLINE Top View Single 5V or 3.3V power supply All I/O pins are 5V tolerant
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blll54T
MT5C2565
150mm
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Untitled
Abstract: No abstract text available
Text: DPS8256P8 256K X 8 CMOS SRAM MODULE DESCRIPTION: The DPS8256P8-25, -35, -45, -55 is a high speed 256K x 8 Static Random Access Memory SRAM module constructed on an epoxy laminate substrate using eight 256K x 1 C M O S RAM's in plastic surface mount packages. The DPS8256P8 features separate
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DPS8256P8
DPS8256P8-25,
DPS8256P8
DPS8256P8-25
DPS8256P8-35
DPS8256P8-45
DPS8256P8-55
30A033-00
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marking 32R
Abstract: No abstract text available
Text: PRELIMINARY MICRON I “ MT8LS25632R 256K X 32 SRAM MODULE ~ 256K X 32 SRAM SRAM MODULE LOW VOLTAGE FEATURES • • • • • • • • • High speed: 15,20 and 25ns High-density 1MB design High-performance, low-power, CMOS double-metal process Single +3.3V ± 0.3V power supply
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MT8LS25632R
64-Pin
MT8LS25632RZ-15
MT8LS2S632R
marking 32R
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marking 1bc
Abstract: No abstract text available
Text: HY62QF16406D Series 256K x 16bit full CMOS SRAM Preliminary DESCRIPTION FEATURES The HV62QF16406D is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62QF16406D uses high performance full CMOS process technology
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HY62QF16406D
16bit
HV62QF16406D
16bits.
48-ball
HYQF6406D
marking 1bc
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Untitled
Abstract: No abstract text available
Text: MT5C2561 256K X 1 SRAM I^ IIC R O ÍN J 256K X 1 SRAM SRAM PIN ASSIGNMENT Top View • High speed: 10*, 12’ , 15, 20, 25 and 35ns • High-performance, ow-power, CMOS double-metal process • Single +5V ±10% power supply Easy memory expansion with CE option
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MT5C2561
24-Pin
MTSC2561
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sram card 60 pin
Abstract: 128k sram card 60 pin battery
Text: JEIDA Ver. 3 STATIC RAM VARIATION Part Number Memory Size AWB129JS10 AWB257JS10 AWB513JS10 128K Bytes 256K Bytes 512K Bytes Description 64K X 16 bits JEIDA Ver.3 MIX CMOS SRAM CARD 128K X 16 bits JEIDA Ver.3 MIX CMOS SRAM CARD 256K X 16 bits JEIDA Ver.3 MIX CMOS SRAM CARD
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AWB129JS10
AWB257JS10
AWB513JS10
AWB257,
AWB513
AWB513
sram card 60 pin
128k sram card 60 pin battery
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Untitled
Abstract: No abstract text available
Text: ^ AUSTIN SEMICONDUCTOR, INC. SRAM 256K x 1 SRAM 256K x 1 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-88725, -88544 • MIL-STD-883, Class B • Radiation tolerant (consult factory) 24- Pin DIP FEATURES • • • • •
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MIL-STD-883,
MT5C2561
TQ02117
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