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    IBM0418A41NLAB

    Abstract: IBM0418A81NLAB IBM0436A41NLAB IBM0436A81NLAB
    Text: IBM0436A41NLAB IBM0418A41NLAB IBM0418A81NLAB IBM0436A81NLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM . Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • Registered outputs • 30 Ω drivers


    Original     		PDF IBM0436A41NLAB IBM0418A41NLAB IBM0418A81NLAB IBM0436A81NLAB 256Kx36 512Kx18) 128Kx36 256Kx18) crrL3325 IBM0418A41NLAB IBM0436A81NLAB

    K7A401800B-QC

    Abstract: K7A401809B K7A401809B-QC K7A403200B-QC K7A403209B K7A403209B-QC K7A403609B K7B401825B-QC K7B403225B-QC
    Text: K7A403609B K7A403209B K7A401809B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters


    Original     		PDF K7A403609B K7A403209B K7A401809B 128Kx36/x32 256Kx18 128Kx36 128Kx32 256Kx18-Bit 570mA 490mA K7A401800B-QC K7A401809B K7A401809B-QC K7A403200B-QC K7A403209B K7A403209B-QC K7A403609B K7B401825B-QC K7B403225B-QC

    K6X4016C3F

    Abstract: K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q
    Text: CMOS SRAM K6X4016C3F Family Document Title 256Kx16 bit Low Power full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 26, 2002 Preliminary 0.1 Revised Added Commercial Product. Deleted 44-TSOP2-400R Package Type.


    Original     		PDF K6X4016C3F 256Kx16 44-TSOP2-400R K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q

    K7A401800B

    Abstract: K7A401800B-QC K7A401809B-QC K7A403200B K7A403200B-QC K7A403209B-QC K7A403600B K7B401825B-QC K7B403225B-QC
    Text: K7A403600B K7A403200B K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters


    Original     		PDF K7A403600B K7A403200B K7A401800B 128Kx36/x32 256Kx18 128Kx36 128Kx32 256Kx18-Bit 350mA 290mA K7A401800B K7A401800B-QC K7A401809B-QC K7A403200B K7A403200B-QC K7A403209B-QC K7A403600B K7B401825B-QC K7B403225B-QC

    IBM0418A8ACLAB

    Abstract: IBM0436A4ACLAB IBM0436A8ACLAB IBM0418A4ACLAB
    Text: . IBM0418A4ACLAB IBM0436A8ACLAB Preliminary IBM0418A8ACLAB IBM0436A4ACLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25 Micron CMOS technology


    Original     		PDF IBM0418A4ACLAB IBM0436A8ACLAB IBM0418A8ACLAB IBM0436A4ACLAB 256Kx36 512Kx18) 128Kx36 256Kx18) crlh3320 IBM0418A8ACLAB IBM0436A4ACLAB IBM0436A8ACLAB IBM0418A4ACLAB

    K7N401801B

    Abstract: K7N403601B
    Text: K7N403601B K7N401801B 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary 0.1 1. Changed DC parameters Icc ; from 350mA to 290mA at -16,


    Original     		PDF K7N403601B K7N401801B 128Kx36 256Kx18 256Kx18-Bit 350mA 290mA 330mA 270mA K7N401801B K7N403601B

    CY7C197

    Abstract: No abstract text available
    Text: CY7C197 256Kx1 Static RAM Features vided by an active LOW chip enable CE and three-state drivers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns Writing to the device is accomplished when the chip enable


    Original     		PDF CY7C197 256Kx1 CY7C197

    K6F4016U6G-EF70

    Abstract: K6F4016U6G K6F4016U6G-F K6F4016U6GE
    Text: Preliminary CMOS SRAM K6F4016U6G Family Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark June 11, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K6F4016U6G 256Kx16 55/Typ. 35/Typ. K6F4016U6G-EF70 K6F4016U6G-F K6F4016U6GE

    IBM0418A4ANLAB

    Abstract: IBM0418A8ANLAB IBM0436A4ANLAB IBM0436A8ANLAB
    Text: . Preliminary IBM0418A4ANLAB IBM0418A8ANLAB IBM0436A8ANLAB IBM0436A4ANLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25µ CMOS technology • Synchronous Register-Latch Mode of Operation


    Original     		PDF IBM0418A4ANLAB IBM0418A8ANLAB IBM0436A8ANLAB IBM0436A4ANLAB 256Kx36 512Kx18) 128Kx36 256Kx18) crlL3325 IBM0418A8ANLAB IBM0436A4ANLAB

    IBM0418A41XLAB

    Abstract: IBM0418A81XLAB IBM0436A41XLAB IBM0436A81XLAB
    Text: . Preliminary IBM0418A81XLAB IBM0436A81XLAB IBM0418A41XLAB IBM0436A41XLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25 Micron CMOS technology


    Original     		PDF IBM0418A81XLAB IBM0436A81XLAB IBM0418A41XLAB IBM0436A41XLAB 256Kx36 512Kx18) 128Kx36 256Kx18) crrh2516 IBM0418A41XLAB IBM0418A81XLAB IBM0436A41XLAB IBM0436A81XLAB

    da53

    Abstract: HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845
    Text: Direct RDRAM 128/144Mbit 256Kx16/18x32s Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and


    Original     		PDF 128/144Mbit 256Kx16/18x32s) 128/144-Mbit 600MHz 800MHz DL0059-00 da53 HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845

    Untitled

    Abstract: No abstract text available
    Text: EDI816256CA 256Kx16 MONOLITHIC SRAM, SMD 5962-96795 FEATURES  256Kx16 bit CMOS Static The EDI816256CA is a 4 megabit Monolithic CMOS Static RAM.  Random Access Memory The EDI816256CA uses 16 common input and output lines and has an output enable pin which operates faster than address access


    Original     		PDF EDI816256CA 256Kx16 EDI816256CA MIL-STD-883

    HY514264

    Abstract: No abstract text available
    Text: •HYUNDAI HY514264B 256Kx16, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60


    OCR Scan     		PDF HY514264B 256Kx16, 16-bit 40-pin 400mil) 16-bits 256Kx16 HY514264

    256Kx4 SRAM

    Abstract: EDI8M4257C
    Text: mD\ EDI8M4257C Electronic Designs Inc. High Speed Megabit SRAM Module 256Kx4 SRAM CMOS, High Speed Module Features The EDI8M4257C is a Megabit 256Kx4-bit High Speed Static RAM Module with four bi-directional input/ output lines. The module is constructed of four 256Kx1


    OCR Scan     		PDF EDI8M4257C 256Kx4 EDI8M4257C 256Kx4-bit) 256Kx1 181256C 256Kx4 SRAM

    Untitled

    Abstract: No abstract text available
    Text: I = =• = Preliminary IBM0418A80QLAB IBM0418A40QLAB IBM0436A80QLAB IBM0436A40QLAB 8Mb 256Kx36 & 512x18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 256K x 36 or 512K x 18 Organizations • Registered Addresses, W rite Enables, Synchro­ nous Select, and Data Ins.


    OCR Scan     		PDF IBM0418A80QLAB IBM0418A40QLAB IBM0436A80QLAB IBM0436A40QLAB 256Kx36 512x18) 128Kx36 256Kx18)

    KM6 II

    Abstract: SRAM sheet samsung KM616
    Text: KM 6 1 6 4 0 0 0 A ei cm ELECTRONICS CMOS SRAM 256Kx16 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM6164000A family is fabricated by SAMSUNG’S advanced CMOS process technology. The family can support various operating


    OCR Scan     		PDF 256Kx16 256Kx16 44-TSOP KM6164000A KM6164000A KM6 II SRAM sheet samsung KM616

    Scans-0012741

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V4002B/BL, KM616V4002BI/BLI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0


    OCR Scan     		PDF KM616V4002B/BL, KM616V4002BI/BLI 256Kx16 KM616V4002BI/BLI 44-SOJ-400 44-TSO P2-400F Scans-0012741

    Untitled

    Abstract: No abstract text available
    Text: Hiyli P e r f o r m a n c i 1 •■ AS29F400 A S I 2 K x 8 / 2 S6 K X I 6 SV C M O S F l a s h F F P R O M S I 2 K x 8 / 2 5 6 K x l 6 CMOS Flush FFPROM Prelim inary inform ation Features • Organization: 512KX8 or 256KX16 • Sector architecture • L o w p o w e r c o n s u m p tio n


    OCR Scan     		PDF AS29F400 512KX8 256KX16 ip9F400T-1SOTC AS29F400T-ISOU AS29F400B-55SC AS29F400B* AS29F400B-70SI AS29F400B-90SC AS29F400B-90SI

    Untitled

    Abstract: No abstract text available
    Text: ^ EDI B«ctronic Designs Inc E D I8 F 1 7 6 2 5 6 C .1 45M Secondary Cache Memory Array Module 256KX176 Asynchronous Static RAM Module with TAG, TAG ECC, and DATA ECC Features The EDI8F176256C is a single array multichip Static RAMmoduleorganizedasa262,144x176bitmernory array.


    OCR Scan     		PDF 256KX176 EDI8F176256C RAMmoduleorganizedasa262 144x176bitmernory R4000 of80Qon EDI8F176256C20MXC EDI8F176256C25MXC

    Untitled

    Abstract: No abstract text available
    Text: HEDI EDI8F16256C ELECTRONIC DESIGNS INC., High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmabie, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in j-leaded (SOJ) chip carriers surface-mounted


    OCR Scan     		PDF EDI8F16256C 256Kx16 EDI8F16256C 4096K-bit 256Kx4 a256Kx16, 512Kx8 1024Kx4

    BQ4025

    Abstract: bq4025Y
    Text: h bq4025/bq4025Y BENCHMARQ 256Kx16 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 words by 16 bits. The in te g ra l co n tro l c irc u itry an d


    OCR Scan     		PDF bq4025/bq4025Y 256Kx16 bq4025 304-bit 40-pin bq4025 bq4025Y

    BQ4025

    Abstract: bq4025Y
    Text: bq4025/bq4025Y BENCHMARQ 256KX16 Nonvolatile SRAM Features General Description > Data retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 w ords by 16 b its . The integral control circuitry and lithium


    OCR Scan     		PDF bq4025/bq4025Y 256KX16 bq4025 304-bit D0037CH bq4025Y

    Untitled

    Abstract: No abstract text available
    Text: TT WHITE M IC R O E LEC TR O N IC S 256Kx16 SRAM 3.3V W PS256K16V-XU X ADVANCED* PLASTIC PLUS FEATURES • Access Tim es of 15,17, 20ns PIN CONFIGURATION TOP VIEW AO c 1 A1 c 2 A2 c 3 A3 c 4 A4 c 5 ■ Standard Commercial Off-The-Shelf COTS M em ory Devices fo r Extended Tem perature Range


    OCR Scan     		PDF PS256K16V-XU 256Kx16

    Untitled

    Abstract: No abstract text available
    Text: C3 WMS256K16-XXX WHITE MICROELECTRONICS 256KX16 M O NO LITHIC SRAM FEATURES • Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging • 44 pin Ceramic SOJ Package 102 • 44 lead Ceramic Ratpack (Package 208) ■ Organized 256Kx16


    OCR Scan     		PDF WMS256K16-XXX 256KX16 MIL-STD-883 as256Kx16 l/Cte-16 Ao-17 256K16