PC100-322-620
Abstract: PC-100-322-620 PC133-333-520 PC100-222-620 P-TSOPII-54 39S256400AT-8A SMD MARKING CODE t15
Text: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM Preliminary Datasheet • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125
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Original
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39S256400/800/160AT
256-MBit
SPT03933
PC100-322-620
PC-100-322-620
PC133-333-520
PC100-222-620
P-TSOPII-54
39S256400AT-8A
SMD MARKING CODE t15
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PDF
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39S256160T
Abstract: PC100-322-620 smd CAY PC100-322 P-TSOPII-54
Text: HYB39S256400/800/160T 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Preliminary Information • High Performance: -8 -8A -8B Units fCK 125 125 100 MHz tCK3 8 8 10 ns tAC3 6 6 6 ns tCK2 10 12 15 ns tAC2 6 6 7 ns • Fully Synchronous to Positive Clock Edge
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Original
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HYB39S256400/800/160T
256MBit
P-TSOPII-54
400mil
PC100
3-2T10
HYB39S256400/800/160AT
39S256160T
PC100-322-620
smd CAY
PC100-322
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PDF
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39S256160DT-7
Abstract: HYB 39S256160DT-7.5 PC100-222 PC133-222 P-TSOPII-54 P-TSOP-54-2
Text: HYB39S256400/800/160DT L /DC(L) 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -6 -7 -7.5 -8 Units • Data Mask for Read / Write control (x4, x8) • Data Mask for byte control (x16) • Auto Refresh (CBR) and Self Refresh fCK 166
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Original
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HYB39S256400/800/160DT
256MBit
P-TSOPII-54
400mil
P-TSOPII-54
GPX09039
TFBGA-54
39S256160DT-7
HYB 39S256160DT-7.5
PC100-222
PC133-222
P-TSOP-54-2
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PDF
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PC100-322-620
Abstract: 39S256 PC133 registered reference design HYB 39S256400CT-7.5 PC-100-322-620
Text: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature
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Original
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HYB39S256400/800/160CT
256MBit
P-TSOPII-54
400mil
PC133
PC100
SPT03933
PC100-322-620
39S256
PC133 registered reference design
HYB 39S256400CT-7.5
PC-100-322-620
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PDF
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PC133 registered reference design
Abstract: No abstract text available
Text: HYB39S256400/800/160DT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Preliminary Datasheet (Rev. 7/01) • High Performance: -6 -7 -7.5 -8 Units fCK 166 143 133 125 MHz tCK3 6 7 7.5 8 ns tAC3 5 5.4 5.4 6 ns tCK2 7.5 7.5 10 10 ns tAC2 5.4 5.4 6 6 ns
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Original
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HYB39S256400/800/160DT
256MBit
P-TSOPII-54
400mil
PC166
PC133
PC133 registered reference design
|
PDF
|
PC100-222-620
Abstract: PC133-333-520 P-TSOPII-54 pc100-322-620 SMD MARKING CODE M3
Text: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8
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Original
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39S256400/800/160AT
256-MBit
SPT03933
PC100-222-620
PC133-333-520
P-TSOPII-54
pc100-322-620
SMD MARKING CODE M3
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PDF
|
P-TSOPII-54
Abstract: PC133 registered reference design
Text: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 Units fCK 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns tCK2 10 10 ns tAC2 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature
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Original
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HYB39S256400/800/160CT
256MBit
P-TSOPII-54
400mil
PC133
PC100
PC133 registered reference design
|
PDF
|
PC100-322-620
Abstract: Schneider NS 800 PC100-322 smd transistor marking ba smd transistor marking BA1 tcs Schneider P-TSOPII-54 PC133 registered reference design
Text: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature
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Original
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HYB39S256400/800/160CT
256MBit
P-TSOPII-54
400mil
PC133
PC100
SPT03910
SPT03923
PC100-322-620
Schneider NS 800
PC100-322
smd transistor marking ba
smd transistor marking BA1
tcs Schneider
PC133 registered reference design
|
PDF
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PC100-322-620
Abstract: P-TSOPII-54 PC133 registered reference design
Text: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature
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Original
|
HYB39S256400/800/160CT
256MBit
P-TSOPII-54
400mil
PC133
PC100
PC100-322-620
PC133 registered reference design
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM Preliminary Information • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125
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Original
|
39S256400/800/160AT
256-MBit
P-TSOPII-54
400mil
PC133
PC100
SPT03933
|
PDF
|
MARKING CAW
Abstract: P-TSOPII-54
Text: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature
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Original
|
HYB39S256400/800/160CT
256MBit
P-TSOPII-54
400mil
PC133
PC100
SPT03933
MARKING CAW
|
PDF
|
39S256160T
Abstract: P-TSOPII-54
Text: HYB39S25640x/80x/16xT 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Target Information Rev. 0.5 High Performance: -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tAC2 6 8 ns • Multiple Burst Read with Single Write Operation • Automatic Command
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Original
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HYB39S25640x/80x/16xT
256MBit
P-TSOPII-54
400mil,
TSOPII-54
TSOP54-2
39S256160T
P-TSOPII-54
|
PDF
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39S256160T
Abstract: TSOP54-2 APA10 39S256160T-8 39S256400T-8
Text: H YB39S25640x/80x/16xT 256MBit Synchronous DRAM SIEMENS 256 MBit Synchronous DRAM Target Information Rev. 0.6 • High Performance: Multiple Burst Operation -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns Automatic Command and Read with Single Controlled
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OCR Scan
|
YB39S25640x/80x/16xT
256MBit
P-TSOPII-54
400mil
P-TSOPII-54
400mil,
TSOPII-54
TSOP54-2
39S256160T
APA10
39S256160T-8
39S256400T-8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: # H YB39S256400/800/160T 256MBit Synchronous DRAM In fin eon 256 MBit Synchronous DRAM Preliminary Information • High Performance: Multiple Burst Operation -8 -8A -8B Units fC K 125 125 100 M Hz tC K 3 8 8 10 ns tA C 3 6 6 6 ns tC K 2 10 12 15 ns tA C 2
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OCR Scan
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YB39S256400/800/160T
256MBit
|
PDF
|
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