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    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE33200 SCHEMATIC LG 0.19 RG CDG 0.16 0.04 GATE GGS 1E-5 RD 0.24 LD 0.2 DRAIN CGS 0.22 CDC 0.065 RDS g t f= 281GHz RI 0.52 CDS 0.05 RS 0.19 LS 0.03 SOURCE BIAS DEPENDENT MODEL PARAMETERS Parameters 2 V, 10 mA 2 V, 20 mA g 73 mS 96 mS t 2.5 pSec


    Original     		PDF 281GHz NE33200 24-Hour

    NE33284AS

    Abstract: NE33284A NE33284A-SL NE33284A-T1 MODEL 536
    Text: SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF dB • HIGH ASSOCIATED GAIN:


    Original     		PDF NE33284A 24-Hour NE33284AS NE33284A-SL NE33284A-T1 MODEL 536

    GM 90 562 573

    Abstract: NE33200 NE33200M NE33200N
    Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to


    Original     		PDF NE33200 NE33200 24-Hour GM 90 562 573 NE33200M NE33200N

    NE33200

    Abstract: NE33200M NE33200N
    Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to


    Original     		PDF NE33200 NE33200 24-Hour NE33200M NE33200N

    NE33284A

    Abstract: NE33284AS NE33284A-SL NE33284A-T1
    Text: SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF dB • HIGH ASSOCIATED GAIN:


    Original     		PDF NE33284A 24-Hour NE33284AS NE33284A-SL NE33284A-T1

    Untitled

    Abstract: No abstract text available
    Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to


    Original     		PDF NE33200 NE33200 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to


    Original     		PDF NE33200 NE33200 24-Hour