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    NE33200 Search Results

    NE33200 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE33200 NEC SUPER LOW NOISE HJ FET Original PDF
    NE33200 Unknown FET Data Book Scan PDF
    NE33200 NEC SUPER LOW NOISE HJ FET Scan PDF
    NE33200M NEC SUPER LOW NOISE HJ FET Original PDF
    NE33200M NEC SUPER LOW NOISE HJ FET Scan PDF
    NE33200N NEC SUPER LOW NOISE HJ FET Original PDF
    NE33200N NEC SUPER LOW NOISE HJ FET Scan PDF

    NE33200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GM 90 562 573

    Abstract: NE33200 NE33200M NE33200N
    Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to


    Original     		PDF NE33200 NE33200 24-Hour GM 90 562 573 NE33200M NE33200N

    NE33200

    Abstract: NE33200M NE33200N
    Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to


    Original     		PDF NE33200 NE33200 24-Hour NE33200M NE33200N

    Untitled

    Abstract: No abstract text available
    Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to


    Original     		PDF NE33200 NE33200 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to


    Original     		PDF NE33200 NE33200 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE33200 SCHEMATIC LG 0.19 RG CDG 0.16 0.04 GATE GGS 1E-5 RD 0.24 LD 0.2 DRAIN CGS 0.22 CDC 0.065 RDS g t f= 281GHz RI 0.52 CDS 0.05 RS 0.19 LS 0.03 SOURCE BIAS DEPENDENT MODEL PARAMETERS Parameters 2 V, 10 mA 2 V, 20 mA g 73 mS 96 mS t 2.5 pSec


    Original     		PDF 281GHz NE33200 24-Hour

    LAMBDA rs SERIES

    Abstract: LAMBDA SEMICONDUCTORS 8E-14
    Text: NONLINEAR MODEL SCHEMATIC LG 2 GATE LD 5 0.08 DRAIN 1 Q1 RD NE33200 R COMP 270 0.17 3 CRF X 10000 RS 1 LS 0.03 SOURCE FET NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters BETA 0.0989 CGD VTO -0.6 KF ALPHA 8 AF 1 LAMBDA 0.2 TNOM 27 THETA2 XTI 3 TAU 4e-12


    Original     		PDF NE33200 4e-12 8e-14 05e-12 16e-12 24-Hour LAMBDA rs SERIES LAMBDA SEMICONDUCTORS

    Curtice

    Abstract: fet curtice nonlinear model fet curtice LAMBDA alpha 400 NE33200 FET model NE71300 Alpha 1000 GaAsFET pspice
    Text: California Eastern Laboratories AN1023 APPLICATION NOTE Converting GaAs FET Models For Different Nonlinear Simulators INTRODUCTION GaAs FET MODELS This paper addresses the issues involved in converting GaAs models for different nonlinear simulators. Three nonlinear GaAs FET models are the Curtice[2], the


    Original     		PDF AN1023 sam13-106. Curtice fet curtice nonlinear model fet curtice LAMBDA alpha 400 NE33200 FET model NE71300 Alpha 1000 GaAsFET pspice

    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


    Original     		PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71

    Untitled

    Abstract: No abstract text available
    Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSO CIATED GAIN vs. FREQ UENCY V ds = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz • HIGH ASS O C IA TED GAIN: 10.5 dB Typical at 12 GHz • GATE LENGTH: 0.3 |im • GATE W ID TH : 280 nm


    OCR Scan     		PDF NE33200 NE33200 NE33200N NE33200M lS22l

    NE67383

    Abstract: No abstract text available
    Text: General Purpose GaAs FETs Typical Specifications @ T a = 25°C Pw t m a '4 m . I NEW^ Güw> |N EW *> I NEW > I N Ew V I NEW ^ »»a Vus Id s M ÊM mA (mA) p p fc M NE33200 NE67300 NE71300 NE76000 NE76100 0.3 0.3 0.3 0.3 1.0 280 280 280 280 400 0.1 0.1 0.1


    OCR Scan     		PDF NE33200 NE67300 NE71300 NE76000 NE76100 NE76083A NE33284A NE25118 NE25139 NE25339 NE67383

    NE33200

    Abstract: LG 631 low noise, hetero junction fet NE33200M NE33200N sl2 357 sn 7441
    Text: SUPER LOW NOISE HJ FET FEATURES NE33200 N O IS E F IG U R E & A S S O C IA T E D G A IN vs. F R E Q U E N C Y V ds = 2 V, I ds = 10 m A • V E R Y L O W N O IS E FIG U R E : 0 .7 5 dB typica l at 12 G H z • H IG H A S S O C IA T E D G A IN : 10.5 dB T ypica l at 12 G H z


    OCR Scan     		PDF NE33200 NE33200 S12S21| 24-Hour LG 631 low noise, hetero junction fet NE33200M NE33200N sl2 357 sn 7441

    sn 7441

    Abstract: No abstract text available
    Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz <n • GATE LENGTH: 0.3 [im • GATE WIDTH: 280 urn


    OCR Scan     		PDF NE33200 NE33200 IS2212 24-Hour sn 7441

    sn 7441

    Abstract: No abstract text available
    Text: NEC SUPER LOW NOISE HJ FET FEATURES_ NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: V ds = 2 V, Ids = 10 m A 0 75 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz • GATE LENGTH: 0.3 nm • GATE WIDTH: 280 |j.m


    OCR Scan     		PDF NE33200 NE33200 NE33200N NE33200M IS221 sn 7441

    Untitled

    Abstract: No abstract text available
    Text: SU PER LOW NOISE HJ FET FEATURES_ NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vd s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz 4 - - -I- .1 1 - r 24 • HIGH ASSOCIATED GAIN:


    OCR Scan     		PDF NE33200 NE33200 sur33200 NE33200N NE33200M 300nm IS12I IS22I2 IS12I

    NE32184A

    Abstract: Ku-BAND NEZ1011-4A nec x-band ne32684a hz nec NE42184A NE20248 NE24200 NE32084
    Text: - 158 - & f m € m tí: £ & m it V* Ì V K V s X Vg s * X I* £ * (V) * (A) >< P d /P ch * (HO Ig s s (max) (A) Vg s (V) & % Id s (min) (max) V ds (A) (A) (V) (min) (max) V d s (V) (V) (V) NE345L-10B NEC L~-S-Band PA GaAs N D 15 DS -7 0 9 D 50 4 NE345L-20B


    OCR Scan     		PDF NE345L-10B NE345L-20B NE20248 NE24200 NE24283A NE32084 4/12GBz NE76038 4/12GHz NE76184A NE32184A Ku-BAND NEZ1011-4A nec x-band ne32684a hz nec NE42184A

    LORB

    Abstract: NE2720 NE334S01
    Text: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18


    OCR Scan     		PDF NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 LORB NE2720 NE334S01

    ne71084

    Abstract: NE76084 NE71000 NE32684A NE67383 NE72000 NE32584 ne72089
    Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs 1.0 to 40 12 2.0 10 0.6 11.0 2.0 20 11.0 00 Chip C or B 1-5 200 1.OtO 40 12 2.0 10 0.6 11.0 2-0 20 11.0 oo Chip D 1-22 280 0.1 to 18 12 2.0 10 0.75 10.5 2.0 20 12.0 00 Chip 0.3 2« 0.1 to 18 12 3.0


    OCR Scan     		PDF NE24200 NE32400 NE33200 NE67300 NE71000 NE76000 NE76100 NE24283B NE67383 NE71083 ne71084 NE76084 NE32684A NE72000 NE32584 ne72089

    ne71084

    Abstract: GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application
    Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber Test Frequency Gita LeagM Width f Range | Frequency C6HZ Min) Pows Bias NF/Gi Bias Available Vos Ids HFow 6* Vds Ids PliB Package


    OCR Scan     		PDF S3200 NE87300 NE76000 NE24283B ne71084 GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application

    NE334S01

    Abstract: E7138 nec microwave NE76084 NE67383
    Text: NEC is a global force in the dozens of satellites around the world. j and engineering services are all geared to computer, communications and home CEL’s Space/Hi Rel Management Group | helping you get your designs off paper and electronics markets. The company’s products


    OCR Scan     		PDF