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    IS12I

    Abstract: NE334S01
    Text: PRELIMINARY DATA SHEET C BAND SUPER LOW NOISE HJ FET NE334S01 FEATURES_ MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: 0.25 dB TYP at 4 GHz 24 - — -


    OCR Scan     		PDF NE334S01 NE334S01 NE334S01-T1 NE334S01-T1B 24-Hour IS12I

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    Untitled

    Abstract: No abstract text available
    Text: NECSUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET SPACE QUALIFIED FEATURES_ NE23383B OUTLINE DIMENSIONS • SUPER LOW NOISE FIGURE: (Units in mm) PACKAGE OUTLINE 83B NF = 0.35 dB TVP at f = 4 GHz • HIGH ASSOCIATED GAIN: G a = 15.0 dB TYP at f = 4 GHz


    OCR Scan     		PDF NE23383B NE23383B IS2212 IS12I IS12S21I

    Untitled

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST ID O


    OCR Scan     		PDF NE46100 NE46134 NE46134 NE461 OT-89) 160jj NE46134-T1 24-Hour

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    881-1 nec

    Abstract: NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NE3451600 NES1417-10B NES1723-20B
    Text: N E C / 1SE CALIFORNIA NEC D b4S7414 Q001S37 1 T -S 1 -9 0 L, S-BAND POWER G aAs MESFET NE345 SERIES FEATURES APPLICATIONS • C H IP O R P A C K A G E O P T IO N S • L-BAN D R A D A R • H IG H P out 1 0 W & 2 0 W • N ARRO W -BAN D C O M M U N IC A TIO N S


    OCR Scan     		PDF b4S7414 G001S37 NE345 NE3451600 ofSiOz/SiNs72 S22-S21S12 NE345100 NE3451600 881-1 nec NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NES1417-10B NES1723-20B

    EZ 742

    Abstract: No abstract text available
    Text: NEZ4450-15D NEZ4450-15DL NEZ4450-8D NEZ4450-8DL NEZ4450-4D NEZ4450-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • O UTPUT POWER AND EFFICIENCY vs. INPUT POWER HIGH P o u t 45 18 W 42.5 dBm TYP PidB for NEZ4450-15D/15DL 9 W (39.5 dBm) TYP PidB for NEZ4450-8D/8DL


    OCR Scan     		PDF NEZ4450-15D NEZ4450-15DL NEZ4450-8D NEZ4450-8DL NEZ4450-4D NEZ4450-4DL NEZ4450-15D/15DL NEZ4450-8D/8DL NEZ4450-4D/4DL 24-Hour EZ 742

    NEC Ga FET marking L

    Abstract: U/25/20/TN26/15/850/NE32984D
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm


    OCR Scan     		PDF NE32984D NE32984D NE32984D-SL NE32984Dr NEC Ga FET marking L U/25/20/TN26/15/850/NE32984D

    NBC 3111

    Abstract: EZ647 EZ64724 NEZ6472-4DL NEZ6472-8DL
    Text: NEZ6472-15D NEZ6472-15DL NEZ6472-8D NEZ6472-8DL NEZ6472-4D NEZ6472-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES OUTPUT POWER AND EFFICIENCY vs. INPUT POWER • HIGH P out 18W 42.5 dBm Typ PidB for NEZ6472-15D/15DL 9W (39.5 dBm) Typ PidB for NEZ6472-8D/8DL


    OCR Scan     		PDF NEZ6472-15D/15DL NEZ6472-8D/8DL NEZ6472-4D/4DL NEZ6472-15D NEZ6472-15DL NEZ6472-8D NEZ6472-8DL NEZ6472-4D NEZ6472-4DL -15DL NBC 3111 EZ647 EZ64724 NEZ6472-4DL

    str 0765

    Abstract: gi 9540 STR W 6750 f STR X 6750 NEC D 70 9360 STR 6750 str r 4440 STR W 6750
    Text: 4 W 14 GHz INTERNALLY NEZ1414 4E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIG H O U TPU T PO W ER: 36.5 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.0 dB TYP • HIGH EFFICIENC Y: 30% TYP • IN D U STR Y STA N D A R D PACKAG ING


    OCR Scan     		PDF NEZ1414 NEZ1414-4E redu50 str 0765 gi 9540 STR W 6750 f STR X 6750 NEC D 70 9360 STR 6750 str r 4440 STR W 6750

    str 2652

    Abstract: No abstract text available
    Text: 2 W 14 GHz INTERNALLY NEZ1414_2E MATCHED POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES HIGH O U TPU T POW ER: 2 W MIN PACKAGE OUTLINE X-17 HIG H LINEAR GAIN: 7.0 dB MIN HIG H EFFICIENC Y: 30% TYP 8 .2 5 ± 0 .1 5 IN D U STR Y S T A N D A R D PACKAG ING IN TER N A LLY M ATCH ED FOR O PTIM UM


    OCR Scan     		PDF NEZ1414 EZ1414-2E IS12I IS211 str 2652

    JF11

    Abstract: NE02133-T1B
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LA RGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 G Hz Gain Com pression


    OCR Scan     		PDF NE021 NE02107 OT-23) NE2100 NE02107/NE02107B NE02130-T1 NE02133-T1B JF11

    sot-343

    Abstract: 2sc5508
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCH TRANSISTOR NE662M04 FEATURES_ • HIGH GAIN BANDWIDTH: fT = 23 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M04 PACKAGE:


    OCR Scan     		PDF OT-343 NE662M04 NE662M04 voltage/l51 IS21I IS12I sot-343 2sc5508

    LB 1639

    Abstract: transistor TT 3043
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: ft = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP


    OCR Scan     		PDF NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B LB 1639 transistor TT 3043

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I d s = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz • Lg = 0.25 jam, W g = 200 irn


    OCR Scan     		PDF NE32484A TheNE32484Ais NE32484AS E32484A-T1 NE32484A-SL. 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET C BAND SUPER LOW NOISE HJ FET NE434S01 FEATURES_ MAXIMUM AV A ILA B LE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: 0.35 dB TYP at 4 GHz • HIGH ASSOCIATED GAIN: 15.5 dB TYP at 4 GHz m td


    OCR Scan     		PDF NE434S01 NE434S01 NE434S01-T1 NE434S01-T1B

    BA 5982

    Abstract: 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 35 MICRO-X


    OCR Scan     		PDF NE856 av3000 NE85639R-T1 BA 5982 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 FEATURES_ ABSOLUTE MAXIMUM RATINGS1 Tc = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 1 W SYMBOLS • HIGH LINEAR GAIN: 9.0 dB PARAMETERS UNITS RATINGS


    OCR Scan     		PDF NE8500100 NE8500199 NE8500100 NE8500199 IS12I JIS12I IS2212 IS12S21I

    sn 7441

    Abstract: No abstract text available
    Text: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz <n • GATE LENGTH: 0.3 [im • GATE WIDTH: 280 urn


    OCR Scan     		PDF NE33200 NE33200 IS2212 24-Hour sn 7441

    SG 2368

    Abstract: No abstract text available
    Text: NEZ7785-15D NEZ7785-15DL NEZ7785-8D C-BAND INTERNALLY MATCHED POWER GaAs MESFET nez7785-4dL NEZ7785-4DL FEATURES • HIGH P o u t 18W 42.5 dBm Typ PidB for NEZ7785-15D/15DL 9W (39.5 dBm) Typ PidB for NEZ7785-8D/8DL 4.5W (36.5 dbm) Typ PidB for NEZ7785-4D/4DL


    OCR Scan     		PDF NEZ7785-15D/15DL NEZ7785-8D/8DL NEZ7785-4D/4DL -15DL NEZ7785-15D NEZ7785-15DL NEZ7785-8D nez7785-4dL IS12I SG 2368

    Untitled

    Abstract: No abstract text available
    Text: 5 W 14 GHz INTERNALLY NEZ1414-5E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 37.0 dBm TYP PACKAGE OUTLINE X-17 HIGH LINEAR GAIN: 7.0 dB TYP HIGH EFFICIENCY: 30% TYP INDUSTRY STANDARD PACKAGING INTERNALLY MATCHED FOR OPTIMUM


    OCR Scan     		PDF NEZ1414-5E

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: V ds = 2 V, Ids = 10 m A 0.45 dB Typical at 12 GHz 24 • HIGH ASSOCIATED GAIN: 21 12.5 dB Typical at 12 GHz m •o • Lg < 0.20 nm, W g = 200


    OCR Scan     		PDF NE32584C NE32584C 3e-13 5e-12 13e-12 3e-12 02e-12 NE32584C-S NE32584C-T1

    23STYLE

    Abstract: No abstract text available
    Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES_ • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • HIGH RELIABILITY METALLIZATION


    OCR Scan     		PDF NE73435) NE734 NE73400) NE73400 OT-323) OT-23) 23STYLE

    tt 18934

    Abstract: 30i sot23 5140 SN 74500
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: ft of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: IS21El2 = 12 dB @ 2 V, 7 mA, 2 GHz IS21EI2 =11 dB @ 1 V, 5m A, 2G H z


    OCR Scan     		PDF IS21El2 IS21EI2 NE686 NE68618-T1 NE68619-T1 NE68630-T1 NE68633-T1 tt 18934 30i sot23 5140 SN 74500