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    NE67383 Search Results

    NE67383 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE67383 NEC LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY Original PDF

    NE67383 Datasheets Context Search

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    NE67383

    Abstract: NE67300 2SK407 NEC NE67300 MESFET 8S222 NE673 NEC NE67383
    Text: LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • VERY HIGH fMAX: 100 GHz 20 • LG = 0.3 µm, WG = 280 µm • N+ CONTACT LAYER Triple Epitaxial Technology


    Original     		PDF NE67300 NE67383 NE673 24-Hour NE67383 NE67300 2SK407 NEC NE67300 MESFET 8S222 NEC NE67383

    NE67383

    Abstract: 1817 transistor marking 34 marking blue
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 83 S 4.0 MIN ALL LEADS D G 0.51 ± 0.05 MARKING MARKING S 1.02 ± 0.05 1.8 ± 0.2 0.1 +0.06 -0.03 PART NUMBER NE67383 EXCLUSIVE NORTH AMERICAN AGENT FOR


    Original     		PDF NE67383 24-Hour NE67383 1817 transistor marking 34 marking blue

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    NE800296

    Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		PDF AN82901-1 24-Hour NE800296 diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4

    NE800296

    Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		PDF AN82901-1 NE800296 NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application

    NE67383

    Abstract: No abstract text available
    Text: LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH fMAX: NE67300 NE67383 100 GHz LOW NOISE FIGURE 0.4 dB at 4 GHz 0.8 dB at 8 GHz 1.4 dB at 12 GHz 1.9 dB at 18 GHz 3.3 dB at 26 GHz


    OCR Scan     		PDF NE67300 NE67383 NE67383 NE673 NE67300)

    NE67383

    Abstract: No abstract text available
    Text: NEC LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH m a x : 100 GHz LOW NOISE FIGURE 0.4 dB at 4 GHz 0.8 dB at 8 GHz 1.4 dB at 12 GHz 1.9 dB at 18 GHz


    OCR Scan     		PDF NE67300 NE67383 NE67383 NE673

    NE67383

    Abstract: No abstract text available
    Text: LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 N O IS E F IG U R E A N D A S S O C IA T E D G A IN vs. FR E Q U E N C Y FEATURES VERY HIGH fMAX: 100 GHz LOW NOISE FIGURE 0.4 0.8 1.4 1.9 3.3 dB dB dB dB dB at at at at at


    OCR Scan     		PDF NE67300 NE67383 NE67383 NE673 NE67300) channe49 lS21l IS12I

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    ne71084

    Abstract: NE76084 NE71000 NE32684A NE67383 NE72000 NE32584 ne72089
    Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs 1.0 to 40 12 2.0 10 0.6 11.0 2.0 20 11.0 00 Chip C or B 1-5 200 1.OtO 40 12 2.0 10 0.6 11.0 2-0 20 11.0 oo Chip D 1-22 280 0.1 to 18 12 2.0 10 0.75 10.5 2.0 20 12.0 00 Chip 0.3 2« 0.1 to 18 12 3.0


    OCR Scan     		PDF NE24200 NE32400 NE33200 NE67300 NE71000 NE76000 NE76100 NE24283B NE67383 NE71083 ne71084 NE76084 NE32684A NE72000 NE32584 ne72089

    ne71084

    Abstract: GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application
    Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber Test Frequency Gita LeagM Width f Range | Frequency C6HZ Min) Pows Bias NF/Gi Bias Available Vos Ids HFow 6* Vds Ids PliB Package


    OCR Scan     		PDF S3200 NE87300 NE76000 NE24283B ne71084 GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application

    NE67383

    Abstract: No abstract text available
    Text: General Purpose GaAs FETs Typical Specifications @ T a = 25°C Pw t m a '4 m . I NEW^ Güw> |N EW *> I NEW > I N Ew V I NEW ^ »»a Vus Id s M ÊM mA (mA) p p fc M NE33200 NE67300 NE71300 NE76000 NE76100 0.3 0.3 0.3 0.3 1.0 280 280 280 280 400 0.1 0.1 0.1


    OCR Scan     		PDF NE33200 NE67300 NE71300 NE76000 NE76100 NE76083A NE33284A NE25118 NE25139 NE25339 NE67383

    NE334S01

    Abstract: E7138 nec microwave NE76084 NE67383
    Text: NEC is a global force in the dozens of satellites around the world. j and engineering services are all geared to computer, communications and home CEL’s Space/Hi Rel Management Group | helping you get your designs off paper and electronics markets. The company’s products


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