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    28F2100 Search Results

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    28F2100 Price and Stock

    Samtec Inc SFSD-05-28-F-21.00-DR-NDX

    DOUBLE ROW DISCRETE WIRE ASSEMBL
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    DigiKey SFSD-05-28-F-21.00-DR-NDX Bag 1
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    Avnet Americas SFSD-05-28-F-21.00-DR-NDX Bulk 1
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    Mouser Electronics SFSD-05-28-F-21.00-DR-NDX
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    Master Electronics SFSD-05-28-F-21.00-DR-NDX
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    Samtec Inc SFSD-20-28-F-21.00-DR-NDX

    Cable Assembly Discrete Wire 0.533m 40 POS Discrete Wire Housing to 40 POS Discrete Wire Housing RCP-RCP - Bulk (Alt: SFSD-20-28-F-21.00)
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    Macronix International Co Ltd MX28F2100TTC-12C4

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    Bristol Electronics MX28F2100TTC-12C4 5
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    28F2100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MX28F2100B

    Abstract: No abstract text available
    Text: Introduction Selection Guide PRELIMINARY 28F2100B 2M-BIT 256K x 8/128K x 16 CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 µAmaximum standby current


    Original     		PDF MX28F2100B 8/128K 144x8/131 072x16 70/90/120ns 16K-Byte 96K-Byte 128K-Byte MX28F2100B

    MX28F2100T

    Abstract: MX28F2100TTC90
    Text: Introduction Selection Guide PRELIMINARY 28F2100T 2M-BIT 256K x 8/128K x 16 CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 µAmaximum standby current


    Original     		PDF MX28F2100T 8/128K 144x8/131 072x16 70/90/120ns 16K-Byte 96K-Byte 128K-Byte MX28F2100T MX28F2100TTC90

    28F002-T

    Abstract: No abstract text available
    Text: APPLICATION NOTE 2M FLASH MEMORY Yes. You can replace Intel 2M flash very easily with Macronix’s flash. Intel Part Number 28F200-T 28F200-B 28F002-T 28F002-B 28F020 Replace with 28F2100T 28F2100B MX28F002-T MX28F002-B MX28F2000P Configuration, Package


    Original     		PDF 28F200-T 28F200-B 28F002-T 28F002-B 28F020 MX28F2100T MX28F2100B MX28F002-T MX28F002-B MX28F2000P 28F002-T

    MX28F2100T

    Abstract: No abstract text available
    Text: INDEX PRELIMINARY 28F2100T 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 uA maximum standby current • Programming and erasing voltage 12V ± 7%


    Original     		PDF MX28F2100T 8/128K 144x8/131 072x16 70/90/120ns 16K-Byte 96K-Byte 128K-Byte PM0383 MX28F2100T

    28F2100

    Abstract: block diagram for automatic room power control MX28F2100B 28F2100B-70
    Text: PRELIMINARY 28F2100B 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100uA maximum standby current • Programming and erasing voltage 12V ± 7%


    Original     		PDF MX28F2100B 8/128K 144x8/131 072x16 70/90/120ns 100uA 16K-Byte 96K-Byte 128K-Byte PM0382 28F2100 block diagram for automatic room power control MX28F2100B 28F2100B-70

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 28F2100T 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 uA maximum standby current • Programming and erasing voltage 12V ± 7%


    Original     		PDF MX28F2100T 8/128K 144x8/131 072x16 70/90/120ns 16K-Byte 96K-Byte 128K-Byte PM0383

    MX-1610

    Abstract: intel 28f200 db86082 mx1610 intel 80586 MX28F002 MXIC flash disk controller db86082b MX26C1000A KM29N32000
    Text: APPLICATION NOTES 1. TYPICAL NONVOLATILE MEMORY APPLICATION 2.) ON-BOARD PROGRAMMING DESIGN CONSIDERATIONS FOR THE MX26C512A 3.) ON-BOARD PROGRAMMING OF THE MX26C1000A 4.) IN-CIRCUIT PROGRAMMING OF THE MX26C1024A 5.) 2M FLASH MEMORY 6.) 8M FLASH MEMORY 7.) MX25L4004A 4M-BIT 4MX1) CMOS SERIAL FLASH MEMORY


    Original     		PDF MX26C512A MX26C1000A MX26C1024A MX25L4004A MX29F1610 MX26C512A, 512K-bit MX26C512A MX9691 MX-1610 intel 28f200 db86082 mx1610 intel 80586 MX28F002 MXIC flash disk controller db86082b MX26C1000A KM29N32000

    Untitled

    Abstract: No abstract text available
    Text: \p M E u m m h M Y IW K IC M X 2 8 F 2 1 OOB 2M -B IT 256K x 8 / 1 28 K x 1 6 CM OS FLASH M EM ORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 10OnAmaximum standby current


    OCR Scan     		PDF 144x8/131 072x16 70/90/120ns 10OnAmaximum 16K-Byte 96K-Byte 128K-Byte 44-PIN 48-PIN

    Untitled

    Abstract: No abstract text available
    Text: [ P : R iiy [ lD Î M [ F S Y M X IC M 28F2100B 2M-BIT[256K x 8 /1 2BK x 1 6 CMOS FLASH MEMORY FEATURES 262,144x8/131,072x16 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100 nAmaximum standby current Programming and erasing voltage 12V + 7%


    OCR Scan     		PDF MX28F2100B 144x8/131 072x16 70/90/120ns 16K-Byte 96K-Byte 128K-Byte DDD1104 MX28F2100BMC-70 MX28F21OOBMC-90

    Untitled

    Abstract: No abstract text available
    Text: in t û l PBEyaSIOKlÄIR' 28F200BX-TL/BL, 28F002BX-TL/BL 2-MBIT 128K x 16, 256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY • Low Voltage Operation for Very Low Power Portable Applications — VCc = 3.3V ±0.3V ■ x8/x16 Input/Output Architecture — 28F200BX-TL, 28F200BX-BL


    OCR Scan     		PDF 28F200BX-TL/BL, 28F002BX-TL/BL x8/x16 28F200BX-TL, 28F200BX-BL 16-bit 32-bit 28F002BX-TL, 28F002BX-BL 16-KB

    Untitled

    Abstract: No abstract text available
    Text: INTEL CORP {MEMORY/PLD/ in tc J L7E I> • 4fl2fal7fci D 0 f l n t , 2 WSEOBSIOIiflM' 28F200BX-TL/BL, 28F002BX-TL/BL 2-MBIT 128K x 16, 256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY ■ Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.3V ±0.3V


    OCR Scan     		PDF 28F200BX-TL/BL, 28F002BX-TL/BL x8/x16 28F200BX-TL, 28F200BX-BL 16-bit 32-bit 28F002BX-TL, 28F002BX-BL 16-KB

    block diagram for automatic room power control layout

    Abstract: 28F2100B
    Text: M X 2 8 F 2 1 OOB 2 M -B IT 2 5 6 K X 8 / 1 2 8 K X T6 CM OS FLASH M EM O R Y FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 100[iAmaximum standby current • Programming and erasing voltage 12V + 7%


    OCR Scan     		PDF 144x8/131 072x16 70/90/120ns 50jas 16K-Byte 96K-Byte 128K-Byte 100mA X28F2100B block diagram for automatic room power control layout 28F2100B

    Untitled

    Abstract: No abstract text available
    Text: 2 M -B IT 2 5 6 K x 8 / 1 2 8 K x 1 6 C M O S F L A S H M E M O R Y FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 10OnAmaximum standby current • Programming and erasing voltage 12V ± 7%


    OCR Scan     		PDF 144x8/131 072x16 70/90/120ns 10OnAmaximum 16K-Byte 96K-Byte 128K-Byte MX28F2100T 44-PIN 48-PIN

    GE capacitor 28f

    Abstract: No abstract text available
    Text: in te ! 28F2Q0BX-TL/BL, 28F002BX-TL/BL 2 MBIT 128K x 16, 256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY H Low Voltage Operation fo r Very Low Power Portable Applications — VCc = 3.3V + 0 .3 V eg V e ry H ig h -P e rfo rm a n c e R ead — 150 ns M axim um A c ce ss T im e


    OCR Scan     		PDF 28F2Q0BX-TL/BL, 28F002BX-TL/BL 28F200BX-TL, 28F200BX-BL 16-bit 32-bit 28F002BX-TL, 28F002BX-BL Applicatio/28F AP-363 GE capacitor 28f

    80L188EB

    Abstract: No abstract text available
    Text: Â W Â K K g i 0K11F@ 1^IM ]Ä?0 K1 in te i 28F200BX-TL/BL, 28F002BX-TL/BL 2 MBIT 128K x 16,256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY • Low Voltage Operation for Very Low Power Portable Applications — VCC = 3.3V ±0.3V ■ x8/x16 Input/Output Architecture


    OCR Scan     		PDF 0K11F@ 28F200BX-TL/BL, 28F002BX-TL/BL 28F200BX-L: 44-Lead 56-Lead 28F002BX-L: 40-Lead E28F200BX-L150 PA28F200BX-L150 80L188EB

    Untitled

    Abstract: No abstract text available
    Text: MXIC ip ^ iy Ë a iM Â i^ Y M X 2 8 F2 1 OOT 2 M - B I T 2 5 6 K x 8 / 1 2 8 K x 1 6 C M O S FLASH M E M O R Y FEA TU RES 262,144x8/131,072x16 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100nAmaximum standby current


    OCR Scan     		PDF MX28F21 144x8/131 072x16 70/90/120ns 100nAmaximum 16K-Byte 96K-Byte 128K-Byte MX28FS100T MX28F21OOT

    TCS 5513

    Abstract: MX28F2100TTC
    Text: i\/!X2BF21 OOT 2M-BITC256K x 8 / 1 2 8 K x 1 6 CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - lOOnAmaximum standby current • Programming and erasing voltage 12V + 7%


    OCR Scan     		PDF X2BF21 2M-BITC256K 144x8/131 072x16 70/90/120ns 16K-Byte 96K-Byte 128K-Byte 100mA XX90H TCS 5513 MX28F2100TTC

    h5ra

    Abstract: NTE 5432
    Text: IV IX 2 S F 2 1 O O B 2M BIT[256K x 8 / 1 28K x 1 6} CMOS FLASH MEMORY FEA TU RES 262,144x8/131,072x16 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100nAmaximum standby current Programming and erasing voltage 12V ± 7%


    OCR Scan     		PDF 144x8/131 072x16 70/90/120ns 100nAmaximum 16K-Byte 96K-Byte 128K-Byte 100mA Q0-Q15 XX90H h5ra NTE 5432