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    2N2231 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N2231 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2231 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N2231 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2231 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N2231 Unknown Vintage Transistor Datasheets Scan PDF
    2N2231 Unknown Vintage Transistor Datasheets Scan PDF
    2N2231 Pirgo Electronics Power Darlingtons in TO-82 / TO-63 Scan PDF
    2N2231 Semitronics Silicon Power Transistors Scan PDF
    2N2231 Silicon Transistor JAN / Consumer / Military / Industrial / Automotive / Hi-Rel Scan PDF
    2N2231 Silicon Transistor Industrial Grade NPN Power Transistors Scan PDF
    2N2231 Solid Power POWER DARLINGTONS - TO-82, TO-63 Scan PDF
    2N2231 Solid Power Power Darlingtons in TO-82 / TO-63 Package Scan PDF
    2N2231 Westinghouse Silicon Power Transistors, Ultra-High Gain, 10 Amp, 150 Watts Scan PDF
    2N2231 Westinghouse Silicon Power Transistors 10 Amps, 150 Watts Scan PDF

    2N2231 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KT808AM

    Abstract: 2SD867Y KT808a BDX51 2N3076 kt808 7F54 2SC1343 2sd339 BD245C
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 55 60 65 70 >= -80 BDS12 SDT7473 2N4070 2N6232 SDT7140 SDT7140 SDT7140 SDT7B03 SDT7B03 SDT7B03 2SC3568L 2N5289 PT2986 2SC3568K 2N2227 2N3471 2N2231 2N3475 S2N5541-4 S2N5541-5 S2N5542-4


    Original     		PDF O-247 OT-186 O-111 T0-61 KT808AM 2SD867Y KT808a BDX51 2N3076 kt808 7F54 2SC1343 2sd339 BD245C

    KT808AM

    Abstract: KT808a kt808 2N3426 2N3076 solitron 2N3455 siemens SID 3 2N3414 GE 2n3400 2N3432
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 55 60 65 70 >= -80 BDS12 SDT7473 2N4070 2N6232 SDT7140 SDT7140 SDT7140 SDT7B03 SDT7B03 SDT7B03 2SC3568L 2N5289 PT2986 2SC3568K 2N2227 2N3471 2N2231 2N3475 S2N5541-4 S2N5541-5 S2N5542-4


    Original     		PDF 2N3495S 2N3496 2N3497 2N3498 2N3499 2N3500 2N3501 2N3502 KT808AM KT808a kt808 2N3426 2N3076 solitron 2N3455 siemens SID 3 2N3414 GE 2n3400 2N3432

    2u 62 diode

    Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20


    Original     		PDF SDT3208 SDT7140 BDT95 BDT96 2u 62 diode KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808

    3SM diode

    Abstract: 2N2243 2N2222B 2N2244 2N2282 2N2250 2N2316 2N2249 2N2303 SOT-23 2N2306
    Text: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31


    Original     		PDF MPS5858 BFR50 TIPP31B ST4341 BSW65 2N1572 2N738 2N2517 2N755 3SM diode 2N2243 2N2222B 2N2244 2N2282 2N2250 2N2316 2N2249 2N2303 SOT-23 2N2306

    2n2224

    Abstract: 2N2222B 2N2244 2N4418 2N2374 2SC321H 2N2250 ESM2369 rca 2N2270 2N2245
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 -60 65 - 70 EN914 2N708 2N914A 2N914A 2N914A 40219 40219 40221 40221 BSY19 BSY19 BSY19 2N3605A 2N3606A 2S95A 2S95A 2N1708A 2N321 0 BF165 2SC321H 2N2319 2N4264 2N2272


    Original     		PDF EN914 2N708 2N914A BSY19 2N3605A 2N3606A 2n2224 2N2222B 2N2244 2N4418 2N2374 2SC321H 2N2250 ESM2369 rca 2N2270 2N2245

    2N2227

    Abstract: 2N2228 2N2772 2N1016 152-06 2N3431 154-04 TO82 2N3430 2N2229
    Text: A Hi-Reliability Semiconductor Manufacturer Home Distributors Employment Information Military Product Products Quality Quote Request Value Added E-mail home | help | email Alloy Transistors HIGH S.O.A. NPN POWER TRANSISTORS 6-20 AMPERES 2N1015, 2N1016, 2N3429-32


    Original     		PDF 2N1015, 2N1016, 2N3429-32 2N1015 2N1016 2N1015A 2N1016A 2N3429 MT-52 2N2227 2N2228 2N2772 2N1016 152-06 2N3431 154-04 TO82 2N3430 2N2229

    2N2222B

    Abstract: 2N2244 2N1104 NB311E Delco LOW-POWER SILICON NPN 2sc1449 BC175 2sc1571 2N2362
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 fT Hz 35 35 35 35 35 35 35 35 35 35 30 30 30 30 30 30 30 30 35 40 180M 60M 150M 150M 20M 20M 20M 20M 300M 20M 35 35 35 35 35 35 35 35 35 40 40 40 40 40 40 40 50 50 100M 2N337A


    Original     		PDF 2SCS02 BFY50 BFX50 NB311E NB311F NB311X NB311Y TP5189 2N1104 2N2222B 2N2244 Delco LOW-POWER SILICON NPN 2sc1449 BC175 2sc1571 2N2362

    Untitled

    Abstract: No abstract text available
    Text: POWER DARLINGTONS TYPE NO. PT MAXIMUM RATINGS @ 25'C BV cbo B V ceo BVebo Ic V V Watts V A Ic VCE A V Sat Test Voltages Conditions VCE Ib V be Ic I ebo V V A A ma hFE MIN MAX 2N2226 150 50 50 15 10 250 2000 4 6 3.5 4 9 .15 30 2N2227 150 100 100 15 10 250 2000 4


    OCR Scan     		PDF 2N2226 2N2227 2N2228 2N2229 2N2230 2N2231 2N3477 0Q43SC TWX-510-224-6582 O-114

    2N1016

    Abstract: 2N2772 2N2771 2N1015 2N1016D 2N2227 TO82 2N2228 2N1016B 2N3430
    Text: • 4 ñ b c1 E m 3 D D G D 4 3 ‘ì DbD discrete devices JEmitronicr hot line TOLL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JEDEC/TYPE 151 153 152 154 2N1015, A, B, C, D 2N1016,


    OCR Scan     		PDF DDGD43T 2N1015, 2N1016, 2N3429-32 2N1015 2N1016 2N1015A 2N1016A 2N3429 152-TO-82 2N1016 2N2772 2N2771 2N1016D 2N2227 TO82 2N2228 2N1016B 2N3430

    2n1478

    Abstract: 2N2204 2N3916 2N1899 2N2202 2N4244 2N1018 2N2951 to-53 2N1886
    Text: jo m itr o n ic r discrete devices s e m ic o n d u c t o r s S em itronics Corp. silicon transistors cont'd silicon power transistors Power Dissipation @ 2 5°C W atts h FE @ lc BVc e (volts) (°C ) BVcbo (volts) fC) |A) (Cl (Al (C) 150 200 150 200 150


    OCR Scan     		PDF 2N338 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A 2n1478 2N2204 2N3916 2N1899 2N2202 2N4244 2N1018 2N2951 to-53 2N1886

    2N2228

    Abstract: No abstract text available
    Text: POWER DARLINGTONS TYPE NO. PT MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo le V Watts V V A hIFE MIN MAX & le VCE A V % Sat Test Voltages Conditions V ce V be le Ib I ebo V V A A ma 2N2226 150 50 50 15 10 250 2000 4 6 3.5 4 9 .15 30 2N2227 150 100 100 15 10 250 2000 4


    OCR Scan     		PDF 2N2226 2N2227 2N2228 2N2229 2N2230 2N2231 2N2232 2N2233 2N3470 2N3471

    2N2753

    Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
    Text: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068


    OCR Scan     		PDF 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N2753 S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110

    westinghouse transistors

    Abstract: westinghouse power transistor westinghouse semiconductor WESTINGHOUSE transistor WESTINGHOUSE ELECTRIC 2N2228 westinghouse 2N3470 2N3470-73 2N2226
    Text: 13 O e : rn m x H 'ZL n ! ! i Page 1 S ilico n P ow er T ra n s is to rs U ltra-H igh G ain J E D E C T y p e s 2N2226-33 2N3470-77 Wesîinghouse -J IM vO O IM 10 Amperes, 150 Watts Collector-to-Emitter Voltage 50 to 200 Volts Ap p licatio n Therm al C h a ra cteristics


    OCR Scan     		PDF Tcss75' 2N2226 2N3470 2N2226-29/2N3470-73 2N2230-33/2N3474-77 24UNF-2AThreads 2N2226-33 75DIO-H_ 2N3470-77 westinghouse transistors westinghouse power transistor westinghouse semiconductor WESTINGHOUSE transistor WESTINGHOUSE ELECTRIC 2N2228 westinghouse 2N3470-73

    2N1016

    Abstract: 2N1015C STA3265 2N2229 2N1015 2N1015A 2N1015B 2N1015D 2N1015E STA9760
    Text: Silicon power transistors NPN TO-61 isolated collector (contad) lc | M A X ) Il FE IC/VCE VcEO(SUS| (Min-Max Tvp e# (Volts) @ A/V) STA9760 10-200 10/4 225 STA9761 300 10-200@ 8/4 10-200@5/4 STA 9762 350 VCE|S*T| @ Ic/Ib (V <a A/A) 2@ 10/1 2 @ 8 /.8


    OCR Scan     		PDF STA9760 STAB760 STA9761 STA3265 STA3285 STA3266 STA8860 2N1016 2N1015C 2N2229 2N1015 2N1015A 2N1015B 2N1015D 2N1015E

    2N2228

    Abstract: 2N2226 2N2227 2N2229 2N2230 2N2231 2N2232 2N2233 2N3470 2N3471
    Text: A P I ELECTRONICS INC 004 3 5 ^ 2 L.1E I GDDD3G1 bM7 • APIC POWER DARLINGTONS TYPE NO. PT @ 25°C Watts MAXIMUM RATINGS B V cbo B V ceo B V ebo Ic V V V A Sat Voltages <$.t> hFE Ic VCE V ce V be MIN MAX A V V V Test Conditions Ib Ic I ebo A A ma 2N2226


    OCR Scan     		PDF 2N2226 2N2227 2N2228 2N2229 2N2230 2N2231 2N2232 2N2233 2N3470 2N3471

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


    OCR Scan     		PDF

    2N2228

    Abstract: 2N2227 2N2229 2N3471 2N2232 2N2231 SOLID POWER CORP BVCEO 2000 PT 10000 2N2226
    Text: SOLI» POWER CORP TS »F|fi3t,S70a 0000 1 5 3 |~ ~ T'33-6I POW ER DARLINGTONS TYPE NO. PT MAXIMUM RATINGS @ 25°C BVcao BV ceo BV ebo le V Watts V V A hIFE @ MIN MAX le A VCE V Sat Voltages V ce V be V V Test Conditions Ib le Iebo A A ma 2N2226 150 50 50 15


    OCR Scan     		PDF 2N2226 2N2227 2N2228 2N2229 2N2230 2N2231 2N2232 2N2233 2N3470 2N3471 SOLID POWER CORP BVCEO 2000 PT 10000

    Transistors 2n551

    Abstract: Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444
    Text: INTEX/ SEflITRÔNICS CORP j e m i E T o 27E D • MôblEHb GD0D2Ö? S discrete devices SEMICONDUCTORS n Sem itronics Corp. 7 ^ - * 2 .7 - silicon transistors cont’d - T - 3 3 O - 0 silicon power transistors rn * Polarity Power Dissipation @ 25°C Watts


    OCR Scan     		PDF 2N339 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A Transistors 2n551 Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    2N3920

    Abstract: 2N648 2N2004 2N2995 2N2202 2N2860 TO11 2N2228 2N29SA 2n4307
    Text: £ ^ I jemitronicr hot line discrete devices TOLL FREE NUMBER 800-777-3960 silicon transistors cont-d silicon small signal transistors choppers Type Polarity Power Dissipation @ 25°C mw tlFE @ lc Tj (°C) BVcbo (volts) HILL (volts) Vet (SAT @ lc (Min.)


    OCR Scan     		PDF 2N941* 2N942* 2N943* 2N944* 2N945* 2N946* 2N1676 2N1677 2N1917* 2N1918* 2N3920 2N648 2N2004 2N2995 2N2202 2N2860 TO11 2N2228 2N29SA 2n4307

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2N2228

    Abstract: 2N2229 to-53 2N3472 2N2226 2N2227 2N2230 2N2231 2N2232 2N2233
    Text: POWER DARLINGTONS TYPE NO. PT MAXIMUM RATINGS @ 25'C BV cbo B V ceo BVebo Ic V V Watts V A Ic VCE A V Sat Test Voltages Conditions VCE Ib V be Ic I ebo V V A A ma hFE MIN MAX 2N2226 150 50 50 15 10 250 2000 4 6 3.5 4 9 .15 30 2N2227 150 100 100 15 10 250 2000 4


    OCR Scan     		PDF 2N2226 2N2227 2N2228 2N2229 2N2230 2N2231 2N2232 2N2233 TWX-510-224-6582 000D431 to-53 2N3472