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    2SB1361 Search Results

    2SB1361 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1361 Panasonic Silicon PNP triple diffusion planar type Original PDF
    2SB1361 Panasonic PNP Transistor Original PDF
    2SB1361 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1361 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1361 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1361 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1361 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1361P Panasonic Silicon PNP Triple Diffusion Planar Type Power Transistor Original PDF
    2SB1361Q Panasonic Silicon PNP Triple Diffusion Planar Type Power Transistor Original PDF
    2SB1361S Panasonic Silicon PNP Triple Diffusion Planar Type Power Transistor Original PDF

    2SB1361 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD2052

    Abstract: 2SD205 2SB1361
    Text: Inchange Semiconductor Product Specification 2SD2052 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·Wide area of safe operation ·Complement to type 2SB1361 APPLICATIONS ·Optimum for the output stage of a HiFi audio amplifier PINNING PIN


    Original     		PDF 2SD2052 2SB1361 2SD2052 2SD205 2SB1361

    2SB1361

    Abstract: 2SD2052
    Text: SavantIC Semiconductor Product Specification 2SB1361 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD2052 ·High transition frequency ·Wide area of safe operation APPLICATIONS ·For high power amplification PINNING


    Original     		PDF 2SB1361 2SD2052 -150V; -20mA 2SB1361 2SD2052

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1361 Unit: mm 15.0±0.3 11.0±0.2 ● ● • Absolute Maximum Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage


    Original     		PDF 2SD2052 2SB1361

    2SD2052

    Abstract: 2SB1361
    Text: SavantIC Semiconductor Product Specification 2SD2052 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·Wide area of safe operation ·Complement to type 2SB1361 APPLICATIONS ·Optimum for the output stage of a HiFi audio amplifier PINNING PIN


    Original     		PDF 2SD2052 2SB1361 2SD2052 2SB1361

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1361 Silicon PNP triple diffusion planar type For high power amplification Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d 0.7 15.0±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −150 V Collector-emitter voltage (Base open)


    Original     		PDF 2SB1361 SC-92

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1361 M Di ain sc te on na tin nc ue e/ d Unit: mm ● ● • Absolute Maximum Ratings Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage


    Original     		PDF 2SD2052 2SB1361

    PT10V

    Abstract: 2SB1361 2SD2052
    Text: Power Transistors 2SB1361 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2052 Unit: mm ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO –150 V Collector to emitter voltage


    Original     		PDF 2SB1361 2SD2052 PT10V 2SB1361 2SD2052

    2SB1361

    Abstract: 2SD2052
    Text: Power Transistors 2SB1361 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2052 Unit: mm ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO –150 V Collector to emitter voltage


    Original     		PDF 2SB1361 2SD2052 2SB1361 2SD2052

    2SB1361

    Abstract: No abstract text available
    Text: Power Transistors 2SB1361 Silicon PNP triple diffusion planar type For high power amplification Unit: mm 5.0±0.2 0.7 15.0±0.3 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −150 V Collector-emitter voltage (Base open)


    Original     		PDF 2SB1361 SC-92 2SB1361

    2SB1361

    Abstract: 2SD2052 PANASONIC
    Text: Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1361 Unit: mm ● ● ● • Absolute Maximum Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 150 V Emitter to base voltage


    Original     		PDF 2SD2052 2SB1361 2SB1361 2SD2052 PANASONIC

    2SB1361

    Abstract: 2SD2052
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1361 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2052 APPLICATIONS ·Designed for high power amplifications.


    Original     		PDF 2SB1361 -150V 2SD2052 -150V; -20mA; 2SB1361 2SD2052

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1361 Silicon PNP triple diffusion planar type For high power amplification Unit: mm 5.0±0.2 0.7 15.0±0.3 • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −150 V Collector-emitter voltage (Base open)


    Original     		PDF 2SB1361

    2SB1361

    Abstract: 2SD2052
    Text: Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1361 Unit: mm ● ● ● • Absolute Maximum Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 150 V Emitter to base voltage


    Original     		PDF 2SD2052 2SB1361 2SB1361 2SD2052

    2SB1361

    Abstract: No abstract text available
    Text: Power Transistors 2SB1361 Silicon PNP triple diffusion planar type For high power amplification Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d 0.7 15.0±0.3 • Features Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)


    Original     		PDF 2SB1361 2SB1361

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    A 933 S transistors

    Abstract: 2SB1361 2SD2052 IS020
    Text: Power Transistors 2SD2052 2SD2052 Silicon Triple-Diffused Planar Type Package Dimensions High Powe< Amplifier Complementary Pair with 2SB1361 • Features Unit *. mm 5.2max. ' / 3.2 , 15.5max. , 6.9min. • V ery good lin earity o f DC c u r re n t gain hKF


    OCR Scan     		PDF 2SD2052 2SB1361 tc-25 A 933 S transistors 2SB1361 2SD2052 IS020

    294a

    Abstract: 2SB1361 2SD2052
    Text: Power T ransistors 2SB1361 2SB1361 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2052 • Features • V ery good linearity o f DC current gain I i f e • W ide area o f sa fety operation (ASO)


    OCR Scan     		PDF 2SB1361 2SD2052 bT32fl52 294a 2SB1361 2SD2052

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2052 2SD2052 Silicon Triple-Diffused Planar Type Package Dimensions High Powe< Amplifier Complementary Pair with 2SB1361 • Features ro 4 - - Unit *. mm 5.2max. Ì/3 .2 6 . 9 m in . S r - Z L - k • V ery good linearity of DC c u rre n t gain hpF


    OCR Scan     		PDF 2SD2052 2SB1361 SD2052 bT326S

    Untitled

    Abstract: No abstract text available
    Text: 2SB1361 Power T ransistors 2SB1361 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2052 Unit : mn 5 2max. 1/3.2 15.5max. • Features 6.9min. • V ery good linearity of DC c u rre n t gain I i f e


    OCR Scan     		PDF 2SB1361 2SD2052 01b2tÃ

    2SB1531

    Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140


    OCR Scan     		PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SB1531 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A

    2SB816

    Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
    Text: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3


    OCR Scan     		PDF 2SA1253 2SB849 2SB775 2SA1264 2SB965 2SB1371 2SA1264 2SB1372 2SB816 2SA1265 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416

    b 817

    Abstract: toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1194
    Text: - £ Type No. jcg 7 |3 £ Manuf. & T T S « B m SANYO 2SA1703 2SB 793A 2SB 794 2SB 795 fé 2SB 798 2SB 799 . B S b a B H 2SB1119 2SB1122 2SAI 416 m B « 2SB1122 2SB1122 2SA1416 2SA1416 2SA1416 2SA1418 2SB 813 2SB 814 . 2SB 815 2SB 816 _ 2SB 817 ✓ 2SB 818


    OCR Scan     		PDF 2SA1703 2SB909M 2SA1705 2SB1044M 2SB1214 2SA1194 2SB1272 2SB76500 2SB1119 b 817 toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a

    Untitled

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100


    OCR Scan     		PDF 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SA1185 2SB1054/2SD1485 2SB1421 2SD1457 2SD1457A 2SB1252/2SD1892 2SB1502/2SD2275

    transistor a2160

    Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
    Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124


    OCR Scan     		PDF N12861 N13801 MN1381 N13811 N13821 N150402 15P0802 N150412 MN15151 MN152121 transistor a2160 transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mini circuits 15542 A1270 Y AN 5606K