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    2SB1372 Search Results

    2SB1372 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1372 Panasonic Silicon PNP triple diffusion planar type power transistor Original PDF
    2SB1372 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1372 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1372 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1372 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1372 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2SB1372 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1372

    Abstract: 2SD2065
    Text: Power Transistors 2SB1372 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2065 Unit: mm ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO –140 V Collector to emitter voltage


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    PDF 2SB1372 2SD2065 2SB1372 2SD2065

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2065 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1372 Unit: mm 15.0±0.3 11.0±0.2 ● ● • Absolute Maximum Ratings Unit Collector to base voltage VCBO 140 V Collector to emitter voltage


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    PDF 2SD2065 2SB1372

    2SB1372

    Abstract: 2SD2065
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1372 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -140V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2065 APPLICATIONS


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    PDF 2SB1372 -140V 2SD2065 -140V; -20mA; 2SB1372 2SD2065

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1372 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2065 Unit: mm 15.0±0.3 11.0±0.2 ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO –140 V Collector to emitter voltage


    Original
    PDF 2SB1372 2SD2065

    2SB1372

    Abstract: 2SD2065
    Text: Power Transistors 2SD2065 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1372 M Di ain sc te on na tin nc ue e/ d Unit: mm ● ● ● 0.7 Ratings Unit Collector to base voltage VCBO 140 V Collector to emitter voltage


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    PDF 2SD2065 2SB1372 2SB1372 2SD2065

    2SB1372

    Abstract: 2SD2065
    Text: Power Transistors 2SD2065 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1372 Unit: mm ● ● ● • Absolute Maximum Ratings Unit Collector to base voltage VCBO 140 V Collector to emitter voltage VCEO 140 V Emitter to base voltage


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    PDF 2SD2065 2SB1372 2SB1372 2SD2065

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    A968A

    Abstract: 2SD2140 2SB1372
    Text: Power Transistors bTBEñSM DD11377 TT7 •PNCE PANASONIC INDL/ELEKÍ SEMI 2SD2140 2SD2140 h^E D Silicon NPN Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SB1372 U n it : 15.5max. ■ Features • V e r y good lin e a rity o f D C c u rre n t gain


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    PDF bT326S4 DD11377 2SD2140 2SB1372 100x2. A968A 2SD2140 2SB1372

    251C

    Abstract: 2SB1372 2SD2065
    Text: P o w e r T ra n s is to rs — 2SD2065 b q 3 2 flS4 o o n a s M PAN ASO NIC mi m p n c b INDL/ELEK SEM I 2SD2065 bT E D Silicon T rip le -D iffu se d P lanar Type Package Dim ensions High Pow er Am plifier Com plem entary Pair with 2SB1372 U n it ^ mm 5.2m ax.


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    PDF QD11354 2SD2065 2SD2065 2SB1372 1135b 00x2iâ 251C 2SB1372

    2SD2065

    Abstract: 2SB1372
    Text: Power T ransistors 2SD2065 2SD2065 Silicon Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SB1372 • Features Unit ^ mm «15.5max. 5 2max. ■3.2 6.9min. I-*- *1 • V ery good linearity of DC c u rre n t gain Iife


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    PDF 2SD2065 2SB1372 Packag25Â TC-25 2SB1372

    2SB1372

    Abstract: 2SD2065
    Text: Power T ransistors 2SB1372 2SB1372 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2065 Unit : mm • Features or • V ery good linearity of DC c u rre n t gain 4- I i f e • Wide area of safety operation (ASO)


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    PDF 2SB1372 2SD2065 -20rr 2SD2065

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2140 2SD2140 Silicon NPN Triple-Diffused Planar Type • Package Dimensions High Power Amplifier Complementary Pair with 2SB1372 ■ Features • V ery good lin e a rity of DC c u r re n t gain I i f e • W ide a re a of good lin e a rity (ASO)


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    PDF 2SD2140 2SB1372 2SD2i40

    i-003

    Abstract: 2SB1372 2SD2065
    Text: P o w e r T ra n s is to rs 2SD2065 2SD2065 Silicon Triple-Diffused Planar Type Package Dim ensions High Pow er Amplifier Com plem entary Pair with 2SB1372 15.5max. • Features 6.9min. • Very good linearity of DC cu rre n t gain • Wide area of safety operation ASO


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    PDF 2SD2065 2SB1372 32flSE i-003 2SB1372 2SD2065

    a968a

    Abstract: 2SB1372 2SD2140
    Text: Power Transistors 2SD2140 2SD2140 Silicon NPN Triple-Diffused Planar Type • Package Dimensions High Power Amplifier Complementary Pair with 2SB1372 ■ Features • V e r y g o o d lin e a r ity o f D C c u r r e n t g a in I i f e • W id e a r e a o f g o o d lin e a r ity (A S O )


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    PDF 2SD2140 2SB1372 a968a 2SB1372 2SD2140

    2SB816

    Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
    Text: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3


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    PDF 2SA1253 2SB849 2SB775 2SA1264 2SB965 2SB1371 2SA1264 2SB1372 2SB816 2SA1265 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416

    Untitled

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100


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    PDF 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SA1185 2SB1054/2SD1485 2SB1421 2SD1457 2SD1457A 2SB1252/2SD1892 2SB1502/2SD2275

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


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    PDF 125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526

    2SB1013

    Abstract: 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 2SA1431 1318J 2SB679
    Text: € Type No. it € Manuf. m = SANYO 3? £ TOSHIBA 2SB679 a NEC SL HITACHI M ± ii FUJITSU & T MATSUSHITA 2SB 1286 ^ □ — A 2SB884 2SB 1287 □ — A 2SB1226 2SB 1288 2SB1131 2SA1431 2SB 1 289 fc' T □ — A 2SB920L 2SB753 2SB946 2SB 1290 _ □ — A 2SB1018


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    PDF 2SB884 2SB679 2SB1105 2SB949 2SB1226 2SB1402 2SB949A 2SB1131 2SA1431 2SB1117 2SB1013 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 1318J 2SB679

    2SB596

    Abstract: 2SB686 2SB824 2sb773 2SB773A 2SA1232 2SB 773 2SB965 2SA1283 773a
    Text: - 52 - m % £ Type No. Manuf. = i# SANYO jpr ^ TOSHIBA S H NEC B ÍL HITACHI * ± a FUJITSU fâ T MATSUSHITA = m MITSUBISHI a — A ROHM 2SB 762 . «1 T 2SB596 2SB703 2SB859 2SB942 2SB1334 2SB 762A fé T 2SB596 2SB703 2SB859 2SB942A 2SA1634 2SB 762B fé T


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    PDF 2SB824 2SB596 2SB703 2SB859 2SB942 2SB1334 2SB942A 2SB686 2sb773 2SB773A 2SA1232 2SB 773 2SB965 2SA1283 773a

    2SA818

    Abstract: 2SB681 2SB849 2SC4341 2SB681 TOSHIBA 2SB601 2SB686 2SB688 2SB558 2sb669
    Text: 49 - S € Type No. a « Manuf. E ft SANYO 2SB 648 B ÍL 2SA1209 2SB 648A S ÍL 2SA1209 2SB 649 ÍL 2SB 649A S ÎL 2SB 650 H ÎL 2SB 653A ÍL 2SB 654A ÎL 2S8 655A i 2SB 668 • 2SA1011 Ä TOSHIBA Is NEC ÍL HITACHI i t i FUJITSU fâ T MATSUSHITA h m MITSUBISHI


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    PDF 2sa1209 2sa1142 2sa818 2sa1284 2sa1220 2sb1086 2sa1011 2sa968 2sa1220a 2SB681 2SB849 2SC4341 2SB681 TOSHIBA 2SB601 2SB686 2SB688 2SB558 2sb669

    en220

    Abstract: DTA143ES 2SA1441 1658 NEC 2sa 1659 RT1P431S 2sa1265n 2SB1188 2SB1371 2SA1659
    Text: - m « Type No. 2SA 1648 . 2SA 1649 " 2SA 1650 , 2SA 165! 2SA 1652 2SA 1653 2SA 1654 -• 2SA 1655 2SA 1656 , 2SA 1657 2SA 1658 2SA 1659 2SA 1660 2SA 1661 2SA 1662 2SA 1663 2SA 1664 2SA 1665 2SA 1666 2SA 1667 • 2SA 1668 2SA 1669 2SA 1670 •" 2SA 1671 ^


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    PDF 2sb1203 2SA1244 2SB933 2SB1204 2SB952 2SB945 2SB1294 2SB1018 2SB946 2SA145Z en220 DTA143ES 2SA1441 1658 NEC 2sa 1659 RT1P431S 2sa1265n 2SB1188 2SB1371 2SA1659

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SD2340 equivalent

    Abstract: D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions General-use Vceo (V) lc VcE(sat) (A) (V) 50 7 100 140 80 LOW VcE(sat) D arlington High-hfE Packag e (No.) lc Ib <0.8 (A) 7 (mA) 700 5 <2 3


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    PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SD2340 equivalent D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707

    2SD2340 equivalent

    Abstract: D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2sd1641 2SD2052 equivalent
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large-Power Transistors Application Functions VcEO (V) General-use 50 100 140 lc 80 LOW VcE(sat) 150 200 400 55 60 80/100 Darlington High-hra. (A) VcE(sat) (V) 7 5 7 10 15 20 6 6 20 4


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    PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SD2340 equivalent D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2SD2052 equivalent