22a ic

Abstract: IC22A 2SD2089 2482 npn
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2089 SMALL SCREEN COLOR TV HORIZONTAL OUTPUT APPLICATIONS WITH NO HEAT SINKING. Unit in mm 1 5 .5 ± 0 . 5 3 -6 ± 0 . 3 3 0 ± 0 .3 . Designed for Heat Sinking Less Applications of Horiaontal Output in Small Screen Color TV.

2SD2089

Contextual Info: SavantIC Semiconductor Product Specification 2SD2089 Silicon NPN Power Transistors DESCRIPTION •With TO-3P H IS package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Small screen color TV horizontal output applications

Contextual Info: ^ s 7 nket H ^ c t r i ^ < m T i SSE J> m 7^^0741 QQQQe13S ITT * S A K J Silicon PN P Epitaxial Planar ☆ Darlington 2SB1259 ☆Com plem ent to type 2SD2081 Application Exam ple: • Outline Drawing 4 . .FM20 D river fo r S olen oid , R elay

2SD2088

Contextual Info: TO SH IBA 2SD2088 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON 2SD2088 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS 5.1 MAX SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : Jif e = 2000 (Min.)

equivalent 2sb1383

Abstract: 2sb1383 equivalent 2sb1383 2sd2083
Contextual Info: 2 k Ω (80Ω) E 2SB1383 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2083) –10max µA V IEBO VEB=–6V –10max mA –120min 2000min VCE(sat) IC=–12A, IB=–24mA –1.8max VBE(sat) IC=–12A, IB=–24mA –2.5max V VCE=–12V, IE=1A

2sd2083

Abstract: transistor 2sd2083 2sb1383
Contextual Info: 2SD2083 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1383 IEBO VEB=6V 10max mA 6 V V(BR)CEO 25(Pulse40) A hFE IC=25mA 120min VCE=4V, IC=12A 2000min V 2 A VCE(sat) IC=12A, IB=24mA 1.8max PC 120(Tc=25°C) W VBE(sat) IC=12A, IB=24mA 2.5max

D2088 TRANSISTOR

Abstract: D2088 transistor D2088 d2088 5-x
Contextual Info: 2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2088 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

D2088

Abstract: 2SD2088
Contextual Info: 2SD2088 東芝トランジスタ シリコンNPNエピタキシャル形 2SD2088 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • 単位: mm 直流電流増幅率が高い。: hFE = 2000 最小 (VCE = 2 V, IC = 1 A)

Contextual Info: I SANKEN ELECTRIC CO LTD SSE D • 7TÌ0741 0001023 13b H S A K J Silicon NPN Triple Diffused Planar ☆Darlington A-Complement to type 2BS1259 2SD2081 Absolute Maximum Ratings Symbol 2SD2081 120 VCBO 120 VcEO 6 Vebo 10 Pulse 15 Ic 1 Ib 30(Tc = 25“C) Pc

2SD2082

Abstract: 2SB1382 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification 2SD2082 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·DARLINGTON ·Complement to type 2SB1382 APPLICATIONS ·Driver for Solenoid, Motor and General Purpose PINNING PIN DESCRIPTION 1 Base 2 Collector

2sb1383

Abstract: 2sd2083 transistor IC 12A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain : hFE= 2000 Min. @ IC= -12A, VCE= -4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Complement to Type 2SD2083

D2088 TRANSISTOR

Abstract: D2088 Transistor D2088 2SD2088
Contextual Info: 2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2088 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

2SD2082

Abstract: 2SB1382
Contextual Info: 2SD2082 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1382 Application : Driver for Solenoid, Motor and General Purpose Conditions V ICBO VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V(BR)CEO 16(Pulse26) A hFE IC=10mA 120min

2SB1259

Abstract: 2sb125 2SD2081
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 2000 Min @ (VCE= -4V, IC= -5A) ·Large Current Capability ·Complement to Type 2SD2081 APPLICATIONS ·Driver for solenoid,relay and motor and general purpose

Contextual Info: TOSHIBA 2SD2088 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON 2SD2Q88 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS 5.1 MAX SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS • • High JJC Uurrent Gain : h;pE = ZOOO (Min.) Low Saturation Voltage

2SB1259

Abstract: 2SD2081 FM20 12v dc to 6v dc
Contextual Info: 2SD2081 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1259 ICBO VCEO 120 V IEBO VEBO 6 V V(BR)CEO 10(Pulse15) A IC VCB=120V 10max µA 10max mA VEB=6V IC=10mA 120min hFE VCE=4V, IC=5A 2000min V A VCE(sat) IC=5A, IB=5mA 1.5max 30(Tc=25°C)

2SD2061

Abstract: 2SD880 2SC782 2SD867 2SD877 2SD797 2S0880 2SC782 TOSHIBA 2Sd 123 tl 2SC783
Contextual Info: - m % € tt Manuf. h a m SANYO TOSHIBA m NEC a ti HITACHI * ± FUJITSU a fâ T MA T S U S H I T A £ MITSUBISHI E. □ — A ROHM ¿ou i¿u vn; S ÎL ¿dUd¿0 2SCÍ338 2SD2081 * 2SD 121 H 2SD525 2SC1398 2SD2061 * 2SD 122 0 ÍL a £ 2SD526 2SD1266A 2SD2061

2SD2088

Abstract: 2SD2088(F)
Contextual Info: 2SD2088 SILICON NPN EPITAXIAL TYPE M I C R O M O T O R D RI V E, H A M M E R D RI V E A P P L I C A T I O N S . SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. U n i t in nun . H i g h D C C u r r e n t G a i n : h p E = 2 0 0 0 H i n . (V^g=2V, Ic=lA)

TF861

Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2089 SMALL SCREEN COLOR TV HORIZONTAL OUTPUT APPLICATIONS WITH NO HEAT SINKING. Unit in mm 1 5 .5 ± 0 .5 I- 3.6 ± 0 .3 3.0 ± 0 .3 . Designed for Heat Sinking Less Applications of Horiaontal Output in Small Screen Color TV.

Contextual Info: | SANKEN ELECTRIC CO LTD 55E » • TTTDTMl 0D01G24 07H « S A K Ü Silicon N P N Triple Diffused Planar 2SD2082 ☆D a rlin g to n ■¿¡•Complement to type 2SB1382 A pplication Example: Driver for Solenoid, Relay and M otor, and General Purpose • Outline Drawing 5 . .FM100

036g

Abstract: 2SD2088
Contextual Info: TO SH IBA 2SD2088 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON 2SD2088 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS 5.1 MAX. SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : Jif e = 2000 (Min.)

2SD2081

Abstract: 2SB1259 FM20 451a
Contextual Info: 2SD2081 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1259 ICBO VCEO 120 V IEBO VEBO 6 V V(BR)CEO 10(Pulse15) A IC VCB=120V 10max µA 10max mA VEB=6V IC=10mA 120min hFE VCE=4V, IC=5A 2000min V A VCE(sat) IC=5A, IB=5mA 1.5max 30(Tc=25°C)

2sd2083

Abstract: 2sb1383
Contextual Info: 2SD2083 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1383 IEBO VEB=6V 10max mA 6 V V(BR)CEO 25(Pulse40) A hFE IC=25mA 120min VCE=4V, IC=12A 2000min V 2 A VCE(sat) IC=12A, IB=24mA 1.8max PC 120(Tc=25°C) W VBE(sat) IC=12A, IB=24mA 2.5max

2sb1383

Abstract: 2sd2083 DSA0016505
Contextual Info: 2 k Ω (80Ω) E 2SB1383 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2083) –10max µA V IEBO VEB=–6V –10max mA –120min 2000min VCE(sat) IC=–12A, IB=–24mA –1.8max VBE(sat) IC=–12A, IB=–24mA –2.5max V VCE=–12V, IE=1A