2SB125 Search Results

2SB1258

Abstract: 2SD1785
Contextual Info: JMnic Product Specification 2SB1258 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1785 ・High DC current gain ・DARLINGTON APPLICATIONS ・Driver for solenoid ,relay and motor and general purpose PINNING PIN DESCRIPTION

2SB1255

Abstract: 2SD1895
Contextual Info: JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1255 DESCRIPTION ・With TO-3PFa package ・Optimum for 90W Hi-Fi output ・High foward current transfer ratio hFE ・Low collector-emitter saturation voltage ・Complement to type 2SD1895

2SB1254

Abstract: 2SD1894
Contextual Info: Product Specification www.jmnic.com 2SD1894 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Optimum for 60W HiFi output ・High foward current transfer ratio ・Low collector saturation voltage ・Complement to type 2SB1254 APPLICATIONS

2SB1252

Abstract: 2SD1895
Contextual Info: P o w er T ra n s is to rs 2SD1895 2SD1895 Silicon NPN Triple-Diffused Planar Darlington Type Package Dim ensions Power A m plifier C om plem entary Pair with 2SB1252 U nit ! mm 5.2max. 1 5 .5 m a x . • Features <z> • O ptim u m for 90W hi-fi o u tp u t

2SB1258

Abstract: 12V 3A RELAY PNP 100V 2A 2SD1785
Contextual Info: Inchange Semiconductor Product Specification 2SB1258 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1785 ・High DC current gain ・DARLINGTON APPLICATIONS ・Driver for solenoid ,relay and motor and general purpose

2SB1255

Abstract: 2SD1895
Contextual Info: Power Transistors 2SB1255 Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification Complementary to 2SD1895 0.7 21.0±0.5 φ 3.2±0.1 15.0±0.2 • Optimum for 90 W Hi-Fi output • High forward current transfer ratio hFE: 5 000 to 30 000

Contextual Info: Power Transistors 2SD1895 2SD1895 Silicon NPN Triple-Diffused Planar Darlington Type Package Dim ensions Power A m plifier C om plem entary Pair with 2SB1252 U n it ! mm • Features • • • • Optimum for 90W hi-fi output High DC current gain hi.E : 5000~30000

Contextual Info: ^ s 7 nket H ^ c t r i ^ < m T i SSE J> m 7^^0741 QQQQe13S ITT * S A K J Silicon PN P Epitaxial Planar ☆ Darlington 2SB1259 ☆Com plem ent to type 2SD2081 Application Exam ple: • Outline Drawing 4 . .FM20 D river fo r S olen oid , R elay

Contextual Info: SANKEN ELECTRIC CO LTD SSE D • TTTD?1»! OOOlGlb TTb M S A K J Silicon NPN Triple Diffused Planar ☆ Darlington 2SD1785 ☆Com plem ent to type 2SB1258 Application Example: •FM20 • Outline Drawing 4 • D river fo r S o len o id , R elay and M o to r,

2SD1769

Abstract: 2SA1568 2SC4064 2SC5370
Contextual Info: Darlington Transistors V CBO V V CEO (V) 2SB1257 Type No. –60 –60 IC (A) PC (W) Complementary –4 (–6) 25 2SD2014 2SB1258 –100 –100 –6 (–10) 2SB1259 –120 –120 –10 (–15) –60 –60 –12 (–20) Package Remarks 2SD1785 FM20 (T0220F)

Contextual Info: Power Transistors 2SB1254 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1894 5.0±0.2 3.2 11.0±0.2 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip • Optimum for 60 W HiFi output • High forward current transfer ratio hFE

Contextual Info: Power Transistors 2SD1891 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1251 Unit: mm 0.7±0.1 5.5±0.2 4.2±0.2 2.7±0.2 ● TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V Collector to emitter voltage

Contextual Info: Power Transistors 2SD1893 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1253 Unit: mm 0.7 15.0±0.3 11.0±0.2 ● ● ● Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : <2.5V

Contextual Info: Power Transistors 2SB1255 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1895 5.0±0.2 3.2 11.0±0.2 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip • Optimum for 90 W HiFi output • High forward current transfer ratio hFE

2SB1253

Abstract: 2SB1253 equivalent 2SD1893
Contextual Info: Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 M Di ain sc te on na tin nc ue e/ d Unit: mm ● 0.7 • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit –130 V –110 V Collector to base voltage

2SB1255

Abstract: 2SD1895
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1255 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD1895 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip

T0220

Abstract: BDT62C 2SB1647 BC516 BCV26 BD678 BD680 BDX47 BSP61 T0-220
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 C O C TaB H bie TpaH 3M C TO pbl PNP copTMpoBKa no TOKy KonneKTopa Kofl: BC516 BCV26 MPSA64 BDX47 BSP61 TIP117 BD678 BD680 BD680A BD682 MJF127 TIP125 TIP127 2SB1624 2SB1020 2SB1254

2SD2014

Abstract: 2SB1257 FM20
Contextual Info: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA

2SB1255

Abstract: 2SD1895
Contextual Info: Power Transistors 2SD1895 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1255 15.0±0.2 φ 3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 • Absolute Maximum Ratings TC = 25°C 10.9±0.5 Parameter

2SD1891

Abstract: 2SB1251
Contextual Info: Power Transistors 2SD1891 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1251 Unit: mm ● ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V Collector to emitter voltage

2SB1254

Abstract: 2SD1894
Contextual Info: JMnic Product Specification 2SB1254 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Optimum for 60W HiFi output ・High foward current transfer ratio ・Low collector saturation voltage ・Complement to type 2SD1894 APPLICATIONS ・Power amplification

2SB1257

Abstract: 12V 3A RELAY 2sb125 2SD2014 RL102
Contextual Info: Inchange Semiconductor Product Specification 2SB1257 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2014 ・High DC current gain ・DARLINGTON APPLICATIONS ・Driver for solenoid ,relay and motor and general purpose

2SB1255

Abstract: 2SD1895
Contextual Info: Inchange Semiconductor Product Specification 2SB1255 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-3PFa package ・Optimum for 90W Hi-Fi output ・High foward current transfer ratio hFE ・Low collector-emitter saturation voltage ・Complement to type 2SD1895

2SD2014

Abstract: 12V 3A RELAY 2SB1257 RL102
Contextual Info: Inchange Semiconductor Product Specification 2SD2014 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·DARLINGTON ·Complement to type 2SB1257 APPLICATIONS ·Driver for solenoid,relay and motor, series regulator,and general purpose applications