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    RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, N-CHANNEL, JUNCTION FET
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    2SK161 Datasheets (57)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK161 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK161 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK161 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK161 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK161 Unknown FET Data Book Scan PDF
    2SK161 Unknown Scan PDF
    2SK161 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK161 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK161 Toshiba Field Effect Transistor Silicon N Channel Junction Type Scan PDF
    2SK161 Toshiba Silicon N channel field effect transistor for FM tuner and VHF band amplifier applications Scan PDF
    2SK161 Toshiba N-Channel MOSFET Scan PDF
    2SK161 Toshiba TO-92 Mini Package Transistors / Junction FETs Scan PDF
    2SK1610 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK161-0 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1610 Unknown FET Data Book Scan PDF
    2SK1610 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1611 Panasonic Silicon N-Channel Power F-MOS FET Original PDF
    2SK1611 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1611 Unknown FET Data Book Scan PDF
    2SK1611 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2SK161 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK1613 Power F-MOS FETs 2SK1613 Silicon N-Channel Power F-MOS Unit : mm • Features 10.5±0.5 2.0±0.1 ■ Absolute Maximum Ratings Tc = 25˚C Symbol Rating VDSS 900 V Gate-Source voltage VGSS ±30 V DC ID ±5 A Pulse IDP ±10 A EAS * 45 mJ Avalanche energy capability


    Original     		PDF 2SK1613

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK1618 L , 2SK1618(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline


    Original     		PDF 2SK1618 D-85622 Hitachi DSA002780

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK1612 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 5.5±0.2 2.7±0.2 4.2±0.2 0.7±0.1 ● High-speed switching (switching power supply)


    Original     		PDF 2SK1612

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK1611 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 5.5±0.2 2.7±0.2 4.2±0.2 0.7±0.1 ● High-speed switching (switching power supply, AC adaptor)


    Original     		PDF 2SK1611

    2SK1610

    Abstract: SC-65 2SK161-0
    Text: Power F-MOS FETs 2SK1610 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic unit: mm 15.0±0.5 500 V VGSS ±30 V DC ID ±13 A Pulse IDP ±26 A EAS*


    Original     		PDF 2SK1610 2SK1610 SC-65 2SK161-0

    2SK1613

    Abstract: SC-65 2sk16
    Text: Power F-MOS FETs 2SK1613 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 15.0±0.5 ■ Applications 13.0±0.5 V ID Pulse IDP ±5 A ±10 A EAS* Avalanche energy capacity


    Original     		PDF 2SK1613 2SK1613 SC-65 2sk16

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SK1618 L , 2SK1618(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline


    Original     		PDF 2SK1618 Hitachi DSA00279

    2SK1572

    Abstract: 2SK1618 Hitachi DSA00347
    Text: 2SK1618 L , 2SK1618(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline


    Original     		PDF 2SK1618 2SK1572 Hitachi DSA00347

    Untitled

    Abstract: No abstract text available
    Text: 2SK1610 Power F-MOS FETs 2SK1610 Silicon N-Channel Power F-MOS Unit : mm • Features 10.5±0.5 2.0±0.1 ■ Absolute Maximum Ratings Tc = 25˚C Symbol Rating VDSS 500 V Gate-Source voltage VGSS ±30 V DC ID ±13 A Pulse IDP ±26 A EAS * 170 mJ Avalanche energy capability


    Original     		PDF 2SK1610

    2SK1613

    Abstract: SC-65 MJ 1502 S
    Text: Power F-MOS FETs 2SK1613 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 15.0±0.5 ■ Applications 13.0±0.5 900 V VGSS ±30 V DC ID ±5 A Pulse


    Original     		PDF 2SK1613 2SK1613 SC-65 MJ 1502 S

    Untitled

    Abstract: No abstract text available
    Text: 2SK1611 Power F-MOS FETs 2SK1611 Silicon N-Channel Power F-MOS Unit : mm avalanche energy capability ● High-speed 4.2±0.2 7.5±0.2 RDS on , high-speed switching characteristic • Applications ø3.1±0.1 switching (switching mode regulator, AC adaptor)


    Original     		PDF 2SK1611

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK1614 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic 15.0±0.5 ■ Applications 13.0±0.5 4.0±0.1 4.5±0.2 900 V VGSS ±30


    Original     		PDF 2SK1614

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK1618 L , 2SK1618(S) Silicon N-Channel MOS FET ADE-208-1297 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter


    Original     		PDF 2SK1618 ADE-208-1297 D-85622 Hitachi DSA00276

    2SK1610

    Abstract: SC-65 M-J58 2sk16
    Text: Power F-MOS FETs 2SK1610 Silicon N-Channel Power F-MOS FET • Features ● High avalanche energy capacity ● VGSS: 30V guaranteed ● Low RDS on , high-speed switching characteristic M Di ain sc te on na tin nc ue e/ d unit: mm 4.0±0.1 V Pulse IDP ±13


    Original     		PDF 2SK1610 2SK1610 SC-65 M-J58 2sk16

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 61 FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS Unit in mm — NF = 2.5dB Typ. (f = 100MHz) Low Noise Figure • High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)


    OCR Scan     		PDF 2SK161 100MHz) 55MAX

    2SC1815 2SA1015

    Abstract: 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1923 2SC1815
    Text: Transistors T ransistors & D iodes fo r A udio Application A M /FM Tuner Frequency Package . Super Mini SC-59 TO-92 (SC-43) Mini 2SC1923 2SC2668 2SC2714 USM (SC-70) SSM SMQ (SC-61) 2SC4215 2SC4915 3SK126 USQ SMV FM8 SMS TA4007F 3SK160 RF FM 2SK161


    OCR Scan     		PDF SC-43) 2SC1923 2SC2668 SC-59) 2SC2714 SC-70) 2SC4215 2SC4915 SC-61) 3SK126 2SC1815 2SA1015 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1815

    2SK161

    Abstract: TA2024 2SK1610 2SK161GR
    Text: TOSHIBA 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 61 Unit in mm FM TUNER APPLICATIONS VHF BAND AM PLIFIER APPLICATIONS 4 .2 M A X . — 1 1 1 I 1 : NF = 2.5dB Typ. (f = 100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)


    OCR Scan     		PDF 2SK161 100MHz) 2SK161 TA2024 2SK1610 2SK161GR

    2SK1613

    Abstract: No abstract text available
    Text: Panasonic Power F-MOS FETs 2SK1613 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss : 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)


    OCR Scan     		PDF 2SK1613 capacitance155' 2SK1613

    2SK1610

    Abstract: No abstract text available
    Text: Panasonic Power F-MOS FETs 2SK1610 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss : 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)


    OCR Scan     		PDF 2SK1610 2SK1610

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 61 FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS Unit in mm 4 .2 M A X. : NF = 2.5dB Typ. (f=100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)


    OCR Scan     		PDF 2SK161 100MHz)

    Untitled

    Abstract: No abstract text available
    Text: 2SK1618 L , 2SK1618(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter


    OCR Scan     		PDF 2SK1618 2SK1618Ã

    2SK192

    Abstract: 2SK192 fet 2SK160A 2SK185 2sk180 2sk163 nec 2SK191 2sk163 nec 2sk163 2sk183
    Text: - 36 - m f =e M £ 2SK160A tt NEC 2SK161 € ffl m m ftt & V* K V *:ft * LF/VHF A J N D -50 GDO FM/VHF RF J N D -18 GDO A 3: ft -50 0 (V) S fé i* (A) X P d/P c h Ig s s (max) ft (W) (A) Vg s (V) Sa M (min) (max) Vd s (A) (A) (V) 4# (Ta=25°C) 1* (min) (max) V d s


    OCR Scan     		PDF 2SK160A 2SK161 2SK162 2SK163 2SK165 271/VE: 2SK183V, 183VE 2SK184 13nV//Tiztyp 2SK192 2SK192 fet 2SK185 2sk180 2sk163 nec 2SK191 nec 2sk163 2sk183

    2SK1614

    Abstract: No abstract text available
    Text: Panasonic Power F-MOS FETs 2SK1614 Silicon N-Channel Power F-MOS I Features ►High avalanche energy capability ►V qss, 30V guaranteed ►Low R ds oii , high-speed switching characteristic I Applications ►High-speed switching (switching mode regulator)


    OCR Scan     		PDF 2SK1614 capacitance155' 2SK1614

    MJ 800

    Abstract: No abstract text available
    Text: P o w e r F -M O S Panasonic F E T s 2SK1611 Silicon N-Channel Power F-MOS I Features ► High avalanche energy capability ► V qss : 30V guaranteed ► Low R ds oii , high-speed switching characteristic I Applications ► High-speed switching (switching mode regulator, AC adaptor)


    OCR Scan     		PDF 2SK1611 Ratin100Q MJ 800