Contextual Info: 2SK1847 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V) I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC)

2SK1885

Abstract: 2SK2437 2SK2438
Contextual Info: 0 ID Series Lineup VDSS = 30V, N-channel Absolute maximum ratings atT a= 25°C Typelto. Package Voss V 2SK1847 (V) CP 2SK1467 2SK1724 VGSS ±15 •o (A) m 0.5 0.25* 2.0 1.0 PCP 2SK2437 i2 0 2SK1468 P d* VGS(off) min to max (V) 1.0 to 2.0 3.5 2.0 4.0 Electrical characteristics atTa = 25°C

2SK1847

Contextual Info: Ordering number:EN4505 N-Channel Silicon MOSFET 2SK1847 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SK1847] 0.16 0.95 0.95 2 1.9 2.9

2SK1847

Contextual Info: Ordering number: EN4505 _ 2SK1847 No.4505 N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. •Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atings at Ta = 25C’C Drain-to-Source Voltage

2SK1847

Abstract: AN 7823
Contextual Info: Ordering number:EN4505 N-Channel Silicon MOSFET 2SK1847 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2091A 0.4 3 0.5 [2SK1847] 0.16 0.95 0.95 2 1.9 2.9

2sk77

Abstract: 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j
Contextual Info: SAftYO Smal 1-signal u r e s F e a FETs Case Outlines unit:mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. ♦ Very low noise figure »Large lYfsl * Low gate leak current ♦ Small-sized package permitting FET-used sets to be made smaller alt LF Amp.Low Noise,Analog Switch,Impedance Conversion Applications

2SK2747

Abstract: 2SK2748 2SJ403 2SK536 2SK1467 2SJ254 2SJ255 2SJ256 2SJ263 2SJ264
Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta » 251C RDS(on)@ID ' VGS W Voss (V) ID (A) PD (W) Teh 0« V 6^*> RDS(on) max(Q) to |Yf»| VDS • M> (A) Vgs (V) VDS 00 to (A) 2SJ282

J289

Abstract: 3SK266 2SK1728 3sk251 DS-17 SANYO
Contextual Info: SAftYO Small-signal MOSFETs Feat, u r e s ♦ Very low noise figure * Large IYf s I * Low gate leak current Sma11-sized package permitting FET-used sets to be made smaller Case Out 1inesiunit:mm SANYO:CP4 x Lr Amp, Low Noise, Analog Switch Impedance Conversion Applications

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2SK968

Abstract: 2SK1375 2sk2073 2SK1747 2SK333 2SK544 2SK937 2SK669 2SK332 2SK715
Contextual Info: b3E » • 7Ti7G7b 0012422 T2Û « T S A J S A 0 Y O Small-signal F e a t u r e s FETs Case Outlines unit-'mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. *Very low noise figure * Large lYfsl * Low gate leak current * Smal1-si zed package permitting FET-used sets to be made smaller

2SK22

Abstract: SGF23
Contextual Info: 2SK.2SJ Ty p e Lists for* Type No . 1nd ioat 1on on Di odes and Hal 1 E 1ements. type, 3SK,SVC,pin d i o d e S . B . D . G a A s SBD, FET SW D i o d e No. 2SK242 2SK283 2 SK 303 2SK436 2SK443 2 SK 53 6 2SK543 2SK545 2SK771 2 SK 84 8 2SK93 1 2SK932 2SK968 2SK10 65

2SK2437

Abstract: CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking
Contextual Info: Medium Output Power M0SFETs 2 LD S r~ i e s (L owD rive)VDS S :1 2V — 200V(F.C.P:F 1 a t SAfÈYO Channe 1 P i-o c e s s) SANYO has realized low-threshold voltage by optimum design of impurity concentration of Si or Si surface by adopting the F.C. P. process

SK968

Abstract: 2SK937 2SK544 2SK669 2SJ286 2SK5 2SK212 2SK543 2SK436 2SK715
Contextual Info: Smal 1-signal SA*YO FETs Features ♦ Very low noise figure * Large IYfsI * Low gate leak current Case Outlines unit¡mm SANYO:SMCP ♦ Small-sized package permitting FET-used sets to be made smaller l¡Source, 2¡Drain, 3¡Gate, i LF ),Low Noise,Analog Switch,Impedance Conversion Applications

Contextual Info: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch

2SK2153

Abstract: 2SJ332S
Contextual Info: • Device Lineup ♦ 2.5V-Drive Power MOSFETs Absolute maximum ratings Ta = 25DC Type No, Package 2SJ381 PCP 2SJ382 TP-FA 2SJ383 2SJ419 2SK2317 2SK2318 FW201 ±10 2 ±12 r r rD (W) lytsi typ Ciss typ (S) (pF) 3.5 400/700 280/400 2.4 170 240/380 155/220 ^