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    2SK2167 Price and Stock

    Rochester Electronics LLC 2SK2167-TD-E

    NCH 10V DRIVE SERIES
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    onsemi 2SK2167-TD-E

    2SK2167-TD-E
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    Verical 2SK2167-TD-E 3,000 770
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    2SK2167-TD-E 1,000 770
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    Rochester Electronics 2SK2167-TD-E 4,000 1
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    2SK2167 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2167 Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    2SK2167 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK2167 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF
    2SK2167 Sanyo Semiconductor Ultra High Speed Switching MOSFETS Scan PDF

    2SK2167 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2167

    Abstract: No abstract text available
    Text: Ordering number:ENN4631 N-Channel Silicon MOSFET 2SK2167 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK2167] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5


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    PDF ENN4631 2SK2167 2SK2167] 25max 2SK2167

    2SK2167

    Abstract: BX-0113
    Text: Ordering number:ENN4631 N-Channel Silicon MOSFET 2SK2167 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SK2167] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5


    Original
    PDF ENN4631 2SK2167 2SK2167] 25max 2SK2167 BX-0113

    2SK2167

    Abstract: ITR02529 ITR02530 ITR02531 ITR02532 ITR02533 ITR02534 ITR02535 BX-0113
    Text: 2SK2167 注文コード No. N 4 6 3 1 A 三洋半導体データシート 半導体ニューズ No.N4631 をさしかえてください。 2SK2167 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長


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    PDF 2SK2167 N4631 600mm2 200mA 200mA, ITR02534 ITR02536 ITR02537 ITR02538 2SK2167 ITR02529 ITR02530 ITR02531 ITR02532 ITR02533 ITR02534 ITR02535 BX-0113

    2SK2167

    Abstract: ITR02529 ITR02530 ITR02531 ITR02532 ITR02533
    Text: 2SK2167 Ordering number : EN4631A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2167 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. Low-voltage drive. Specifications Absolute Maximum Ratings at Ta=25°C


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    PDF 2SK2167 EN4631A 2SK2167 ITR02529 ITR02530 ITR02531 ITR02532 ITR02533

    2SK2167

    Abstract: No abstract text available
    Text: 2SK2167 SPICE PARAMETER Nch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 VERSION 3.2 VTH0 2.61 NLX 4.70E-07 DVT2 -0.01 UB 1.00E-21 AGS -0.86 RDSW 2.07E+05 WINT NFACTOR 1.24 CDSCD PCLM 0.20 DROUT 0.96 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 1.00E-12 CGDL 1.50E-09


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    PDF 2SK2167 70E-07 00E-21 00E-12 50E-09 0E-07 00E-08 66248E-6 66248E-12 18E-04 2SK2167

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK2116, 2SK2117 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM


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    PDF 2SK2116, 2SK2117 O-220CFM 2SK2116 2SK2117 D-85622 Hitachi DSA002749

    2SK2166

    Abstract: 2SK2167 2SK1157 2SK1158 2SK2116 2SK2117
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    PDF

    2SK1157

    Abstract: 2SK1158 2SK2116 2SK2117 2SK2166 2SK2167 DSA003639
    Text: 2SK2116, 2SK2117 Silicon N-Channel MOS FET ADE-208-1347 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator


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    PDF 2SK2116, 2SK2117 ADE-208-1347 O-220CFM 2SK2116 2SK1157 2SK1158 2SK2116 2SK2117 2SK2166 2SK2167 DSA003639

    2sk3436

    Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
    Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis


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    PDF TND023F FX504 CPH5504 MCH5805 FX505 HPA72R TND024F FX506 MCH3301 TND024MP 2sk3436 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744

    2SC3953-SPICE

    Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
    Text: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f


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    PDF 12A02CH-SPICE 12A02CH 12A02CH 2SB1205 2SB1205 2SC3953-SPICE 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE

    2sk3436

    Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
    Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。


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    PDF 40610HKPC TC-00002289 CPH5815 MCH5815 MCH6629 MCH6649 CPH6610 CPH6614 SCH1411 SCH1436 2sk3436 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970

    2062A

    Abstract: 2SK2167 500D
    Text: Ordering number: EN 4631 2SK2167 No.4631 N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. •Very high-speed switching. * Low-voltage drive. bsolute M axim um R atin g s a t Ta = 25°C Drain-to-Source Voltage


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    PDF EN4631 2SK2167 250mm2 2062A 500D

    Untitled

    Abstract: No abstract text available
    Text: • AP Series Lineup H-ll Series Existing type VDSS = 250V, N-channel Absolute maximum ratings atTa = 25°C Type No. Package Vi«« m m 2SK2167 2SK2168 2SK2321 +20 <n»' TO-220 MM Cfe» (S) W typ 8.0/12.0 0.4 37 3.5/5.0 0.9 80 3.5 +30 4.0 30 0.5/0.7 4.0


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    PDF 2SK2167 2SK2168 2SK1920 2SK2199 2SK2321 2SK1921 2SK2142 2SK2010 2SK2011 2SK2012

    transistor C3467

    Abstract: A1370 transistor C3467 A1728 c3467 transistor SFCPA B1123 transistor A1370
    Text: SAHYO NEW PRODUCT PCP4/5 series FP series High performance composite type devices suitable for surface mounting which make the sets smaller andlighter. In these times the advantage of new products is to make sets smaller and lighter . Thus, the main market need is that discrete devices are "high performance" as well as being able to realize lighter, thinner,


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    PDF 30-50Z mounting213 FP214 FP401 2SK2167X2) 2SB1121X2 2SD1621X2 2SB1123X2 2SD1623X2 2SB1397X2 transistor C3467 A1370 transistor C3467 A1728 c3467 transistor SFCPA B1123 transistor A1370

    J289

    Abstract: 3SK266 2SK1728 3sk251 DS-17 SANYO
    Text: SAftYO Small-signal MOSFETs Feat, u r e s ♦ Very low noise figure * Large IYf s I * Low gate leak current Sma11-sized package permitting FET-used sets to be made smaller Case Out 1inesiunit:mm SANYO:CP4 x Lr Amp, Low Noise, Analog Switch Impedance Conversion Applications


    OCR Scan
    PDF Sma11-sized 2SK1839< 2SK536 2SK1840UJ) 3SK248CNJ) 2SK669 2SK1841 2SK583 Characteristics/Ta-25X; 12/55m J289 3SK266 2SK1728 3sk251 DS-17 SANYO

    2SK22

    Abstract: SGF23
    Text: 2SK.2SJ Ty p e Lists for* Type No . 1nd ioat 1on on Di odes and Hal 1 E 1ements. type, 3SK,SVC,pin d i o d e S . B . D . G a A s SBD, FET SW D i o d e No. 2SK242 2SK283 2 SK 303 2SK436 2SK443 2 SK 53 6 2SK543 2SK545 2SK771 2 SK 84 8 2SK93 1 2SK932 2SK968 2SK10 65


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    PDF 2SK242 2SK283 2SK436 2SK443 2SK543 2SK545 2SK771 2SK93 2SK932 2SK968 2SK22 SGF23

    J289

    Abstract: K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311
    Text: Small-signal Features MOS FETs ♦ Very low noise_ figure * Large _ |Yfs| # Low gate leak current * Small-sized packageipermitting — ' i ♦ FET-used sets to be made, smaller Case Oct 1in.es /uni I.:a SANYO :C:'4 sjc LF Amp, Low Noise, Analog Switch Impedance Conversion Applications


    OCR Scan
    PDF 3SK265 3SK266 3SK248 12/55m 2/80m 45/-/50m 130m/65m 21/90m MT931224TR J289 K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311

    B1396

    Abstract: transistor s72
    Text: SA/Im PCP4/5 series :FPseries 2 High performance composite type devices suitable for surface mounting which make the sets smaller and lighter. note:Uarking is the figures of Type No. Si ¡When mounted on ceramic board( 2 5 0 m m 1X 0 . 8 mm ) (1 uni t) a te D C — D O c o n v e r t o r s ( T R t S B D )


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    PDF FP101 FP102 FP103 FP104 FP105 FP106 FP107 FP108 2SK2167X2 FP402 B1396 transistor s72

    2sk303

    Abstract: 2SK2219 2SK283 sk184 2SK2171 SK174 2SK436 2SK848 P/N146071 2sd22
    Text: SA0YO Lists for- Type No . Ind icat ion on Transistors. 2 SA t y p e Type No. 2 S A1 2 5 2 2SA1256 2 S A 12 5 7 2 S A1 3 3 1 2 S A13 3 8 2 S A 13 41 2 S A13 4 2 2SA1343 2 S A 13 4 4 2 S A 14 1 5 2 S A 14 1 6 2 S A 14 1 7 2 S A1 4 1 8 2 S A1 4 1 9 2 S A14 3 4


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    PDF 2SA1256 2SA1343 2SA1655 2SK2167 2SK2168 2SK2170 2SK2171 2SK2260 2SK2218 2SK2219 2sk303 2SK283 sk184 SK174 2SK436 2SK848 P/N146071 2sd22

    Untitled

    Abstract: No abstract text available
    Text: SA0YO N E W P R O D U C T P C P 4 / 5 s e r i e s :FP s e r i e s 2 High perfor m an ce co mpo sit e type d e v i c e s s u i t a b l e f o r s u r f a c e mounting which make the s e t s s m alle r and l i g h t e r . n o te :M ark in g i s the f i g u r e s of Type No.


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    PDF 2SK2167X2 2SK2151X2 FP501 FP401 FP402 FP403 FP401-FP402 FP403 MT940701TR

    transistor s72

    Abstract: B1123 B1396 di621 sanyo CG B1121 FP101 FP102 FP103 FP104
    Text: SA/Im PCP4/5 series :FPseries 2 High performance composite type devices suitable for surface mounting which make the sets smaller and lighter. note:Uarking is the figures of Type No. Si ¡When mounted on ceramic board( 2 5 0 m m 1X 0 . 8 mm ) (1 uni t) a te D C — D O c o n v e r t o r s ( T R t S B D )


    OCR Scan
    PDF FP101 FP102 FP103 FP104 FP105 FP106 FP107 FP108 2SK2151X2 FP403 transistor s72 B1123 B1396 di621 sanyo CG B1121