Untitled
Abstract: No abstract text available
Text: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications
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2SK2166-01R
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Untitled
Abstract: No abstract text available
Text: 2SK2166-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIA SERIES Outline Drawings 15.5 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 Applications Motor controllers General purpose power amplifier DC-DC converters ±0.3 3.2 +0.3 ±0.3 2.3 ±0.2
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2SK2166-01R
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2SK2166-01R
Abstract: No abstract text available
Text: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications
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2SK2166-01R
2SK2166-01R
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2SK2166
Abstract: No abstract text available
Text: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications
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2SK2166-01R
2SK2166
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2SK2166-01R
Abstract: P channel MOSFET 40A ON60
Text: 2SK2166-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIA SERIES Outline Drawings 15.5 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 Applications Motor controllers General purpose power amplifier DC-DC converters ±0.3 3.2 +0.3 ±0.3 2.3 ±0.2
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2SK2166-01R
2SK2166-01R
P channel MOSFET 40A
ON60
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gs 069
Abstract: 2SK2166-01
Text: 2SK2166-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications - Motor Control
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2SK2166-01
gs 069
2SK2166-01
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2SK1083-MR
Abstract: 2SK1096-MR 2SK1946-01MR 2SK2018-01L 2SK2098-01MR 2SK2226-01L 2SK2248-01L 2SK2249-01L 2SK2516-01L 2SK2517-01L
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET F-III / FAP-III シリーズ（Nチャネル） F-III / FAP-III series N channel ロジックレベル駆動／アバランシェ耐量保証 Logic level drive / Avalanche rated 形 式
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2SK2248-01L,
2SK2249-01L,
2SK2516-01L,
2SK1083-MR
2SK2018-01L,
2SK1096-MR
2SK1946-01MR
2SK2517-01L,
2SK2832-01R
2SK2098-01MR
2SK1083-MR
2SK1096-MR
2SK1946-01MR
2SK2018-01L
2SK2098-01MR
2SK2226-01L
2SK2248-01L
2SK2249-01L
2SK2516-01L
2SK2517-01L
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Hitachi DSA002749
Abstract: No abstract text available
Text: 2SK2116, 2SK2117 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM
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2SK2116,
2SK2117
O-220CFM
2SK2116
2SK2117
D-85622
Hitachi DSA002749
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2SK2166
Abstract: 2SK2167 2SK1157 2SK1158 2SK2116 2SK2117
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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2SK1157
Abstract: 2SK1158 2SK2116 2SK2117 2SK2166 2SK2167 DSA003639
Text: 2SK2116, 2SK2117 Silicon N-Channel MOS FET ADE-208-1347 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator
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2SK2116,
2SK2117
ADE-208-1347
O-220CFM
2SK2116
2SK1157
2SK1158
2SK2116
2SK2117
2SK2166
2SK2167
DSA003639
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2SK1969
Abstract: 2SK1508 2SK2691 2SK2690 2SJ477 2SK2906 TO-220F15 2SK1390 2SK1083 2SK1881
Text: POWER MOS FET Feb-00 Quick Selection Guide F-I series High speed switching F-II series FAP-II series High speed switching Avalanche rated FAP-IIA series Low-on resistance Low typical capacitance F-III series P channel Avalanche rated F-III series FAP-III series
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Feb-00
2SK2248
2SK2249
2SK2048
O-220F15
2SK2808
2SK2890
2SK2689
2SK2891
2SK2893
2SK1969
2SK1508
2SK2691
2SK2690
2SJ477
2SK2906
TO-220F15
2SK1390
2SK1083
2SK1881
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F5022
Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01
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2SK3474-01
2SK3537-01MR
2SK3554-01
2SK3555-01MR
2SK3556-01L,
2SK3535-01
2SK3514-01
2SK3515-01MR
2SK3516-01L,
2SK3517-01
F5022
f5017h
F5021H
f5016h
2sk3528
2sk2696
F5038H
2SK3102-01R
2SK2696-01MR
F5018
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1600 v mosfet
Abstract: No abstract text available
Text: 2SK2166-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ _ _ _ - FAP-IIIA SERIES Outline Drawings • Features • High current • Low on-resistance • No secondary breakdown • Low driving power
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2SK2166-01
1600 v mosfet
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Untitled
Abstract: No abstract text available
Text: 2SK2166-01R FUJI POWER M OS-FET N-OHANIMEL SILICON POWER MOS-FET - F A P - I I I A S E R I E S • reatures Outline Drawings • I- igh cu rre n t • L dw on-resistance • f\o secondary breakdown • L jw d riving p o w e r
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OCR Scan
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2SK2166-01R
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2SK1815
Abstract: 2SK1388
Text: MOSFETs FAP-IIIA Series Automotive Types Logic Level Operation, Low Rds ON , High Avalanche Ruggedness, Integrated G-S Surge Protection, 60 Volts Device Type 2SK1822-01M 2SK2165-01 2SK2166-01 2SK2259-01M 2SK1823-01 2SK1969-01 Maximum Ratiilas I d (A) Pd (W)
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2SK1822-01M
2SK2165-01
2SK2166-01
2SK2259-01M
2SK1823-01
2SK1969-01
O220F15
0220F
T0220F15
T03PF
2SK1815
2SK1388
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ci 740
Abstract: K1279 TO-220F15 K1969 2SK1822-01MR 2SK1823-01R 2SK2165-01 2SK2166-01R 2SK2259-01MR 2SK2687-01
Text: <s MOSFETs FAP-IIIA Series - Automotive Types, Logic Level Operation, Low R ds ON , High Avalanche Ruggedness, Integrated G-S Surge Protection, 60 Volts Device Type Maximum Ratinas Pd (W) V dss (V) Id (A) 2SK1822-01MR 2SK2165-01 2SK2166-01R 2SK2259-01MR 2ÖK1823-01R
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2SK1822-01MR
O-220F15
2SK2165-01
2SK2166-01R
2SK2259-01MR
2SK1823-01R
K1969-01
2SK1818MR
ci 740
K1279
TO-220F15
K1969
2SK2687-01
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Untitled
Abstract: No abstract text available
Text: MOSFETs FAP-IIIA Series - Automotive Types, Logic Level Operation, Low R d s ON , High Avalanche Ruggedness, Integrated G-S Surge Protection, 60 Volts Maximum Ratinas I d (A ) Pd (W) Device Type Characteristics (Max.1 V dss (V ) 2SK1822-01 MR 2SK2165-01 2SK2166-01R
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2SK1822-01
2SK2165-01
2SK2166-01R
2SK225Ã
-01MR
2SK1823-01R
2SK1969-01
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2SK2166-01
Abstract: No abstract text available
Text: 2SK2166-01 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET . . - FAP-IIIA SERIES Outline Drawings • Features • High current • Low o n-resistance • No secondary b reakdow n • Low driving p o w e r
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OCR Scan
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2SK2166-01
20Kf2)
A2-310
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2SK100
Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:
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T0-220
T0-220F15
2SJ472-01L
2SJ314-01L
2SJ473-01L
2SK2248-01L
2SK1942-01
2SK2770-01
2SK2528-01
2SK1944-01
2SK100
2SK2765
2SK2029-01LS
2sk1936
2SK1940
2sk2761
2SK196
2SK2082
2SK1082
2SK182
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Untitled
Abstract: No abstract text available
Text: a /\°7 -MOSFET / Power MOSFETs FAP-IIIA '> 'J ~ X FAP-IIIA series iS iS Ä rH m • 1&J- m j Device type High surge ruggedness Voss to pulse * ’ Rds Amps. Volts ms 20 80 0.07 35 ±20 1.5 TO-220F15 60 40 160 0.03 40 ±20 1.5 TO-220F15 2.3 60 40 160 0.03
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O-220F15
2SK1822-01
2SK2259-01MR
2SK2165-01
2SK2166-01R
2SK1969-01
2SK1823-01R
F8006N
F7007N
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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2SK2652
Abstract: 2SK2771-01R
Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT
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F8006N
F7007N
2SJ472-01L
T0-220
2SJ314-01L
2SJ473-01L
2SJ474-01L
2SJ476-01L
2SK2760-01R
2SK2148-01R
2SK2652
2SK2771-01R
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Untitled
Abstract: No abstract text available
Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,
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2SK2770-01
2SK2272-01R
2SK2528-01
2SK1212-01R
2SK1944-01
2SK2653-01R
2SK727-01
2SK1217-01R
2SK1082-01
2SK2655-01R
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LS 2025
Abstract: No abstract text available
Text: <§ MOSFETs F-lll Series - Logic Level Operation, Low R d s ON 3 0 - 1 5 0 Volts Device Type 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049 2SK1087MR 2SK1817MR 2SK2446 L.S 2SK2050
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OCR Scan
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2SK1505MR
2SK2048L
2SK1388
2SK1083MR
2SK1096MR
2SK1086MR
2SK1881L
2SK1387MR
2SK1089
2SK1508
LS 2025
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