2SK2672
Abstract: F5W90HVX2
Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2672 F5W90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) 900V 5A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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2SK2672
F5W90HVX2
100mJ
2SK2672
F5W90HVX2
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2SK2672
Abstract: F5W90HVX2 F5W90 2SK26
Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2672 F5W90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) 900V 5A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2672
F5W90HVX2
100mJ
2SK2672
F5W90HVX2
F5W90
2SK26
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2672 F5W90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS (Unit : mm) Case : MTO-3P 900V 5A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2672
F5W90HVX2
100mJ
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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AO4405
AO4407
AO4408
AO4409
AO4410
AO4411
AO4413
AO4415
AO4422
AO4700
IRF1830G
IRF1830
transistor IRF1830G
APM2054N equivalent
apm2054n
AP85L02h
AP70N03S
2SK3683
ap70l02h
2SK2696
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2SK4111
Abstract: 2SK4110 2SK4106 2sk4112 2sk2671 2sk4113 2SK2648 2N5121 2N5160 equivalent 2SK2666
Text: STI Type: 2SK258 Notes: Breakdown Voltage: 250 Continuous Current: 8 RDS on Ohm: 1.12 Trans Conductance Mhos: 0.9 Trans Conductance A: 3.0 Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:
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2SK258
O-204AA/TO-3
2SK259
2SK258H
O-218
2SK695
2SK695A
2SK4111
2SK4110
2SK4106
2sk4112
2sk2671
2sk4113
2SK2648
2N5121
2N5160 equivalent
2SK2666
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Untitled
Abstract: No abstract text available
Text: H V X -ÏÏ5 / U -X /X7-M 0SFET HVX-n SERIES POWER MOSFET W f^ ä s H I X > A > 7 .^ > K S ! O U T L IN E D IM E N S IO N S 2SK2672 F5W 90HVX2 900V 5a • R A TIN G S ■ A b s o lu te Maxim um R a tin g s m Item n (T c = 2 5 ° C ) a £ f* Conditions Symbol
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2SK2672
90HVX2)
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2SK2674
Abstract: No abstract text available
Text: Power MOSFETs HVX-II series N-Channel, Enhancement type I, ^¿y E-pack SMD Surface Mount Cis3 (typ) R dS(ON) V dss Id Pt .i ' j . . .JA I. . 2SK2663 2SK2665 2SK2670 900 1 3 5 . m Tch V gss (max) . ivi . .L'ÌL . _
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STO-220
2SK2663
2SK2665
2SK2670
STO-220
Fig30-45-4
2SK2333
2SK2664
2SK2674
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2SK2067
Abstract: S20LCA20 d4la20 12014af S12KC40 S24LCA20 SRT-2W6H D1NL20 S10SC4 TRANSISTORS REPLACEMENT
Text: List of Discontinued Parts T h e d is c o n tin u e d p a rts a re as fo llo w s . T h e c h a r a c te r is tic s and p e rfo rm a n c e o f re p la c e m e n t p a rts a re a lm o s t th e sam e, b u t th e y are n o t id e n tic a l in all re s p e c ts .
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S1RBA80
D1NK20
D1NK20H
D1NK40
D1NK40H
S1K20
S1K20H
S1K40
S1K40H
S2K20
2SK2067
S20LCA20
d4la20
12014af
S12KC40
S24LCA20
SRT-2W6H
D1NL20
S10SC4
TRANSISTORS REPLACEMENT
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D2SBA60
Abstract: 2SD1515 2SC3259 2SC3261 S1WB40 SRT-2W6H 2SC4530 2SC3262 2SC2789 S12KC20
Text: List of Discontinued Parts The discontinued parts are as follows. The characteristics and performance of replacement parts are almost the same, but they are not identical in all respects. Therefore, we ask you to study the details shown in the list carefully when using the parts.
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D1V60
D4BB10
D4BB20
D4BB40
D4BB60
S1RBA10
S1RBA20
S1RBA40
S1RBA60
S1RBA80
D2SBA60
2SD1515
2SC3259
2SC3261
S1WB40
SRT-2W6H
2SC4530
2SC3262
2SC2789
S12KC20
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S20LCA20
Abstract: D5LCA20 2SK2067 SRK-12ZB D8LCA20 D15LCA20 D5KC20R S24LCA20 D8LCA20R SRT-2W6H
Text: List of Discontinued Parts The d iscontinued parts are as follow s. The characteristics and performance of replacem ent parts are alm ost the same, but they are not identical in all respects. Therefore, we ask you to study the details shown in the list carefully when using the parts.
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S1RBA80
D1NK20
D1NK20H
D1NK40
D1NK40H
S1K20
S1K20H
S1K40
S1K40H
S2K20
S20LCA20
D5LCA20
2SK2067
SRK-12ZB
D8LCA20
D15LCA20
D5KC20R
S24LCA20
D8LCA20R
SRT-2W6H
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Untitled
Abstract: No abstract text available
Text: Pow er M O S F E T HVX series N-Channel, Enhancement type Part No. Absolute Maximum Ratings Electrical Characteristics R d s ON ton toff EIAJ Tch V dss V g ss ID Pt (max) (typ) (typ) No. [°C ] [V] [V] [A] [W ] [Q ] [ns] [ns] Package Fig. 1 10 50 30 70 100
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61-4SMD)
O-220
IT0-220
2SK1533
FT0-220
FTO-220
ST0-220
67SMD)
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complementary MOSFET 2sk
Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
Text: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V
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DC12V
DC24V
DC48V
AC100V
AC200V
0-60V)
2SJ487
2SK2816
2SJ488
2SJ489
complementary MOSFET 2sk
transistor+2sk
2SK series
2SK 20a 600v
2sk 1181
2SK 150A
2SK+series
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Untitled
Abstract: No abstract text available
Text: H V X -IS 'U —X JV 7 — MOSFET H V X -I SERIES POWER MOSFET N -^-V % l . hS O U T L IN E D IM E N S IO N S Case: M T 0 -3P F5W 90HVX2) 5.0 ±0.3 ¿3.3*Q-2 90GV 5A 2.0±Q3 2,4*0 3 0.65¿0-2 (D (D • G ate I D rain @ ’ S o u rc e [U n it ‘ mm] ■ ïËt ëm
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90HVX2)
2SK2672
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2SK2188
Abstract: F10W90HVX2 2SK2669 2SK2196 F20w 2SK2177 FP7W90HVX2 2SK2182
Text: ¡Ê fc -S lïi ü « R A T IN G S Teh V d s s V g s s Id DC EIA J No. Type No. «SlWflHÌ T c = 25"C E lectrical C h aracteristics Absolute Maximum Ratings [•c] [V ] [V ] P t R d s ON (max) Tc=25°C V g s = 1 0 V Id Iti C iss (typ) ton toff (typ) (typ)
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2SK2177
2SK2178
2SK2179
2SK2180
2SK2181
2SK2182
2SK2183
2SK2184
2SK2185
2SK2186
2SK2188
F10W90HVX2
2SK2669
2SK2196
F20w
FP7W90HVX2
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