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    2SK369 Search Results

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    2SK369 Price and Stock

    Toshiba America Electronic Components 2SK369-V(F)

    Trans JFET N-CH 30mA Si 3-Pin TO-92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop 2SK369-V(F) 650
    • 1 -
    • 10 -
    • 100 $3.1
    • 1000 $2.83
    • 10000 $2.83
    		Buy Now

    Toshiba America Electronic Components 2SK369-GR(F)

    Trans JFET N-CH 10mA Si 3-Pin TO-92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop 2SK369-GR(F) 250
    • 1 -
    • 10 -
    • 100 $3.1
    • 1000 $2.9
    • 10000 $2.9
    		Buy Now

    2SK369 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK369 Toshiba N-Channel MOSFET Original PDF
    2SK369 Unknown Scan PDF
    2SK369 Unknown FET Data Book Scan PDF
    2SK369 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Scan PDF
    2SK369 Toshiba Silicon N channel field effect transistor for low noise audio amplifier applications. Suitable for use as first stage for equalizer and MC head amplifiers Scan PDF
    2SK369 Toshiba Junction FETs Scan PDF
    2SK3690-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3691-01MR Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3692-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3693-01MR Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3694-01L Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3694-01S Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3694-01SJ Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3695-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3696-01MR Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3697-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3697-01 Fuji Electric Power Amplifier, 600V 42A 600W, MOS-FET N-Channel enhanced Original PDF
    2SK3698-01 Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK3699-01MR Fuji Electric N-CHANNEL SILICON POWER MOSFET Original PDF
    2SK369-BL Toshiba 2SK369 - TRANSISTOR 16 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, 2-5F1D, SC-43, 3 PIN, FET General Purpose Small Signal Original PDF

    2SK369 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK36

    Abstract: No abstract text available
    Text: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)


    Original     		PDF 2SK369 2SK36

    2sk3699

    Abstract: 2sk3699-01mr
    Text: 2SK3699-01MR FUJI POWER MOSFET 200305 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators


    Original     		PDF 2SK3699-01MR O-220F 2sk3699 2sk3699-01mr

    Untitled

    Abstract: No abstract text available
    Text: 2SK3690-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features Outline Drawings [mm] High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220AB Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3690-01 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: 2SK3695-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3695-01 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: 2SK3692-01 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK3692-01 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: 2SK3697-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features Outline Drawings [mm] High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power 11.6±0.2 Applications Switching regulators


    Original     		PDF 2SK3697-01

    TOSHIBA 2SK369

    Abstract: 2SK369 2SK3693
    Text: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)


    Original     		PDF 2SK369 TOSHIBA 2SK369 2SK369 2SK3693

    2SK3690-01

    Abstract: No abstract text available
    Text: 2SK3690-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators


    Original     		PDF 2SK3690-01 O-220AB 2SK3690-01

    75V15

    Abstract: No abstract text available
    Text: 2SK3693-01MR 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators


    Original     		PDF 2SK3693-01MR O-220F 75V15

    Untitled

    Abstract: No abstract text available
    Text: 2SK3694-01L,S,SJ 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features T-Pack High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators


    Original     		PDF 2SK3694-01L

    2SK369

    Abstract: No abstract text available
    Text: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. · High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)


    Original     		PDF 2SK369 2SK369

    2SK369

    Abstract: TOSHIBA 2SK369
    Text: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)


    Original     		PDF 2SK369 2SK369 TOSHIBA 2SK369

    2SK3697-01

    Abstract: MJ10
    Text: 2SK3697-01 N-CHANNEL SILICON POWER MOSFET 200407 Outline Drawings mm FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3697-01 2SK3697-01 MJ10

    2sk170 FET

    Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
    Text: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch


    Original     		PDF 2SK246 2SJ103 2SK117 2SK362 2SK363 2SK364 2SJ104 2SK30ATM 2SK170 2SJ74 2sk170 FET Junction-FET fet to92 2SK118 2SJ74 2sk879 2sj105 2SJ14

    2sk369

    Abstract: No abstract text available
    Text: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)


    Original     		PDF 2SK369 SC-43 2sk369

    2SK3691-01MR

    Abstract: 148mH
    Text: 2SK3691-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators


    Original     		PDF 2SK3691-01MR O-220F 2SK3691-01MR 148mH

    2SK3697-01

    Abstract: No abstract text available
    Text: 2SK3697-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features Outline Drawings [mm] High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


    Original     		PDF 2SK3697-01 2SK3697-01

    switching power supply schematic

    Abstract: 2SK3698-01 equivalent
    Text: 2SK3698-01 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK3698-01 O-220AB switching power supply schematic 2SK3698-01 equivalent

    K369

    Abstract: TOSHIBA 2SK369 2SK369 field effect transistor
    Text: T O S H IB A 2SK369 2SK369 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Unit in mm FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS • • Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : IYfsl = 40mS Typ.


    OCR Scan     		PDF 2SK369 K369 TOSHIBA 2SK369 2SK369 field effect transistor

    TOSHIBA 2SK369

    Abstract: K369 2SK369 "TOSHIBA" "2SK369" fa1210
    Text: TO SH IBA 2SK369 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK369 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS • • • • • Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High ¡Yfsi : iYfsi = 40mS Typ.


    OCR Scan     		PDF 2SK369 12truments, TOSHIBA 2SK369 K369 2SK369 "TOSHIBA" "2SK369" fa1210

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK369 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK369 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS . 5.1 MAX. Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : IYfsl = 40mS Typ. (VDS = 10V, V g s = 0, lDSS = 5mA)


    OCR Scan     		PDF 2SK369

    transistor 2sk369

    Abstract: No abstract text available
    Text: TOSHIBA 2SK369 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K3 69 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : IYfs| = 40mS Typ. n r « n _ i m r


    OCR Scan     		PDF 2SK369 --40V 10Oil transistor 2sk369

    2SK369

    Abstract: 01JA
    Text: T O S H IB A 2SK369 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK369 FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS U nit in mm . 5.1 MAX. Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : |Yfs | = 40mS Typ.


    OCR Scan     		PDF 2SK369 2SK369 01JA

    2SK369

    Abstract: No abstract text available
    Text: T O S H IB A 2SK369 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK369 Unit in mm FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : |Yfs| = 40mS Typ. (VDS = 1OV, V g s = 0, IDSS = 5mA)


    OCR Scan     		PDF 2SK369 SC-43