2SK36
Abstract: No abstract text available
Text: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)
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2SK369
2SK36
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2sk3699
Abstract: 2sk3699-01mr
Text: 2SK3699-01MR FUJI POWER MOSFET 200305 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators
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2SK3699-01MR
O-220F
2sk3699
2sk3699-01mr
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Untitled
Abstract: No abstract text available
Text: 2SK3690-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features Outline Drawings [mm] High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220AB Applications Switching regulators DC-DC converters
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2SK3690-01
O-220AB
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Untitled
Abstract: No abstract text available
Text: 2SK3695-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters
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2SK3695-01
O-220AB
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Untitled
Abstract: No abstract text available
Text: 2SK3692-01 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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2SK3692-01
O-220AB
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Untitled
Abstract: No abstract text available
Text: 2SK3697-01 200401 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features Outline Drawings [mm] High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power 11.6±0.2 Applications Switching regulators
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2SK3697-01
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TOSHIBA 2SK369
Abstract: 2SK369 2SK3693
Text: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)
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2SK369
TOSHIBA 2SK369
2SK369
2SK3693
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2SK3690-01
Abstract: No abstract text available
Text: 2SK3690-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220AB FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators
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2SK3690-01
O-220AB
2SK3690-01
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75V15
Abstract: No abstract text available
Text: 2SK3693-01MR 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators
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2SK3693-01MR
O-220F
75V15
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Untitled
Abstract: No abstract text available
Text: 2SK3694-01L,S,SJ 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features T-Pack High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators
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2SK3694-01L
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2SK369
Abstract: No abstract text available
Text: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. · High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)
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2SK369
2SK369
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2SK369
Abstract: TOSHIBA 2SK369
Text: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)
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2SK369
2SK369
TOSHIBA 2SK369
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2SK3697-01
Abstract: MJ10
Text: 2SK3697-01 N-CHANNEL SILICON POWER MOSFET 200407 Outline Drawings mm FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters
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2SK3697-01
2SK3697-01
MJ10
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2sk170 FET
Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
Text: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch
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2SK246
2SJ103
2SK117
2SK362
2SK363
2SK364
2SJ104
2SK30ATM
2SK170
2SJ74
2sk170 FET
Junction-FET
fet to92
2SK118
2SJ74
2sk879
2sj105
2SJ14
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PDF
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2sk369
Abstract: No abstract text available
Text: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)
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2SK369
SC-43
2sk369
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2SK3691-01MR
Abstract: 148mH
Text: 2SK3691-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators
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Original
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2SK3691-01MR
O-220F
2SK3691-01MR
148mH
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2SK3697-01
Abstract: No abstract text available
Text: 2SK3697-01 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features Outline Drawings [mm] High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters
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Original
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2SK3697-01
2SK3697-01
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switching power supply schematic
Abstract: 2SK3698-01 equivalent
Text: 2SK3698-01 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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Original
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2SK3698-01
O-220AB
switching power supply schematic
2SK3698-01 equivalent
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K369
Abstract: TOSHIBA 2SK369 2SK369 field effect transistor
Text: T O S H IB A 2SK369 2SK369 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Unit in mm FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS • • Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : IYfsl = 40mS Typ.
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OCR Scan
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2SK369
K369
TOSHIBA 2SK369
2SK369
field effect transistor
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TOSHIBA 2SK369
Abstract: K369 2SK369 "TOSHIBA" "2SK369" fa1210
Text: TO SH IBA 2SK369 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK369 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS • • • • • Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High ¡Yfsi : iYfsi = 40mS Typ.
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OCR Scan
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2SK369
12truments,
TOSHIBA 2SK369
K369
2SK369
"TOSHIBA" "2SK369"
fa1210
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK369 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK369 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS . 5.1 MAX. Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : IYfsl = 40mS Typ. (VDS = 10V, V g s = 0, lDSS = 5mA)
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OCR Scan
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2SK369
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PDF
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transistor 2sk369
Abstract: No abstract text available
Text: TOSHIBA 2SK369 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K3 69 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : IYfs| = 40mS Typ. n r « n _ i m r
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OCR Scan
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2SK369
--40V
10Oil
transistor 2sk369
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PDF
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2SK369
Abstract: 01JA
Text: T O S H IB A 2SK369 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK369 FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS U nit in mm . 5.1 MAX. Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : |Yfs | = 40mS Typ.
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OCR Scan
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2SK369
2SK369
01JA
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PDF
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2SK369
Abstract: No abstract text available
Text: T O S H IB A 2SK369 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK369 Unit in mm FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : |Yfs| = 40mS Typ. (VDS = 1OV, V g s = 0, IDSS = 5mA)
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OCR Scan
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2SK369
SC-43
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PDF
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