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    2MX4 Price and Stock

    onsemi ESDL2012MX4T5G

    TVS DIODE 1VWM 5.2VC 2DFN
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    DigiKey ESDL2012MX4T5G Digi-Reel 22,896 1
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    ESDL2012MX4T5G Cut Tape 22,896 1
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    ESDL2012MX4T5G Reel 10,000 10,000
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    Avnet Asia ESDL2012MX4T5G 8 Weeks 20,000
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    Avnet Silica ESDL2012MX4T5G 9 Weeks 10,000
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    EBV Elektronik ESDL2012MX4T5G 10 Weeks 10,000
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    Flip Electronics ESDL2012MX4T5G 956,458
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    Microchip Technology Inc PIC32MX450F256HT-I-MR

    IC MCU 32BIT 256KB FLASH 64QFN
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    DigiKey PIC32MX450F256HT-I-MR Reel 3,300 3,300
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    Microchip Technology Inc PIC32MX450F256L-I-PT

    IC MCU 32BIT 256KB FLASH 100TQFP
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    DigiKey PIC32MX450F256L-I-PT Tray 1,055 1
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    Microchip Technology Inc PIC32MX470F512L-120-PT

    IC MCU 32BIT 512KB FLASH 100TQFP
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    DigiKey PIC32MX470F512L-120-PT Tray 1,039 1
    • 1 $9.6
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    Microchip Technology Inc PIC32MX470F512L-120-PF

    IC MCU 32BIT 512KB FLASH 100TQFP
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    DigiKey PIC32MX470F512L-120-PF Tray 782 1
    • 1 $10.28
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    Find more 2MX4 price and stock on Findchips.com

    2MX4 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    EM488M1644VTD-7F

    Abstract: EM488M1644VTD
    Text: _ EM488M1644VTD 128Mb 2Mx4Bankx16 Synchronous DRAM Feature Description • Fully synchronous to positive clock edge The EM488M1644VTD is Synchronous • Single 3.3V +/- 0.3V power supply Dynamic Random Access Memory (SDRAM)


    Original     		EM488M1644VTD 128Mb 2Mx4Bankx16) EM488M1644VTD 128Mb EM488M1644VTD-7F PDF

    2MX40

    Abstract: 402006EQS1G07TH DS842 8 pin
    Text: 2M x 40 Bit 3.3V EDO DIMM Extended Data Out EDO DRAM DIMM 402006EQS1G07TH 100 Pin 2Mx40 EDO DIMM Unbuffered, 1k Refresh, 3.3V Pin Assignment Pin# Pin# 1 Vcc 51 2 DQ0 52 3 DQ1 53 4 DQ2 54 5 DQ3 55 6 Vcc 56 7 DQ4 57 8 DQ5 58 9 DQ6 59 10 DQ7 60 11 CAS0* 61


    Original     		402006EQS1G07TH 2Mx40 1Mx40 1Mx16 256x8 DS842 8 pin PDF

    EM488M1644VTC

    Abstract: No abstract text available
    Text: _ EM488M1644VTC 128Mb 2Mx4Bankx16 Synchronous DRAM Feature Description • Fully synchronous to positive clock edge The EM488M1644VTC is Synchronous • Single 3.3V +/- 0.3V power supply Dynamic Random Access Memory (SDRAM)


    Original     		EM488M1644VTC 128Mb 2Mx4Bankx16) EM488M1644VTC 128Mb PDF

    EM488M1644VTB

    Abstract: No abstract text available
    Text: _ EM488M1644VTB 128Mb 2Mx4Bankx16 Synchronous DRAM Feature Description • Fully synchronous to positive clock edge The EM488M1644VTB is Synchronous • Single 3.3V +/- 0.3V power supply Dynamic Random Access Memory (SDRAM)


    Original     		EM488M1644VTB 128Mb 2Mx4Bankx16) EM488M1644VTB 128Mb PDF

    72402ASEM4G19T

    Abstract: No abstract text available
    Text: 4M x 72 Bit PC-66 SDRAM DIMM PC-66 SYNCHRONOUS DRAM DIMM 72402ASEM4G19T 168 Pin 4Mx72 SDRAM DIMM Unbuffered, 4k Refresh, 3.3V with SPD Pin Assignment General Description The 72402ASEM4G19T is a 4Mx72 bit, 19 chip, 168 Pin DIMM module consisting of 18 2Mx4x2


    Original     		PC-66 PC-66 72402ASEM4G19T 4Mx72 DS572-0 72402ASEM4G19T PDF

    s8050 d 128

    Abstract: AML7218 ET4334 as1117 L 33 as1117-33 CN601 1117-3.3v m1d 95 s8050 d 33 AS1117
    Text: 5 4 3 Y/Pb/Pr D 2CH 2 1 AUDIO D 5v POWER R L 4558 ET4334 5V_IN C IIS C SDRAM - 2Mx4x16 128MB 6ns /1Mx4x16(64M) 5v LDO AS1117-3.3 LDO AS1117 3.3V AML7218 1.2V CF CARD B B SDRAM - 2Mx4x16 (128MB) 6ns /1Mx4x16(64M) 4IN1 CARD 16Mb FLASH ONE OTG ONE HOST A A


    Original     		ET4334 2Mx4x16 128MB) /1Mx4x16 AS1117-3 AS1117 AML7218 s8050 d 128 AML7218 ET4334 as1117 L 33 as1117-33 CN601 1117-3.3v m1d 95 s8050 d 33 AS1117 PDF

    diode db3 c248

    Abstract: CPPLC7LTBR EPM3128ATC100-10 IC LM317 8pin siemens ferrite n22 p14 zener DB3 C209 K4S643232-TC60 MURATA BLM18ag121 HALO N5 C242-C244
    Text: Freescale Semiconductor, Inc. User’s Manual Freescale Semiconductor, Inc. MPC852TADSRM/D Version 1.0 June 1, 2003 MPC852TADS User’s Manual Motorola, Inc., 2003 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc.


    Original     		MPC852TADSRM/D MPC852TADS diode db3 c248 CPPLC7LTBR EPM3128ATC100-10 IC LM317 8pin siemens ferrite n22 p14 zener DB3 C209 K4S643232-TC60 MURATA BLM18ag121 HALO N5 C242-C244 PDF

    EM488M3244LBB

    Abstract: EM488M3244LBB-75F EM488M3244LBB-75FE
    Text: eorex Preliminary EM488M3244LBB 256Mb 2Mx4Bank×32 Synchronous DRAM Features Description • Fully Synchronous to Positive Clock Edge • Single 1.8V ±0.1V Power Supply • LVCMOS Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8


    Original     		EM488M3244LBB 256Mb EM488M3244LBB EM488M3244LBB-75F EM488M3244LBB-75FE PDF

    EM488M1644VTB

    Abstract: EM488M1644VTB-6F EM488M1644VTB-75F EM488M1644VTB-7F
    Text: eorex EM488M1644VTB 128Mb 2Mx4Bank×16 Synchronous DRAM Features Description • Fully Synchronous to Positive Clock Edge • Single 3.3V ±0.3V Power Supply • LVTTL Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8


    Original     		EM488M1644VTB 128Mb EM488M1644VTB EM488M1644VTB-6F EM488M1644VTB-75F EM488M1644VTB-7F PDF

    EM488M1644VTC

    Abstract: EM488M1644VTC-75F EM488M1644VTC-7F
    Text: eorex EM488M1644VTC 128Mb 2Mx4Bank×16 Synchronous DRAM Features Description • Fully Synchronous to Positive Clock Edge • Single 3.3V ±0.3V Power Supply • LVTTL Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8


    Original     		EM488M1644VTC 128Mb EM488M1644VTC EM488M1644VTC-75F EM488M1644VTC-7F PDF

    EM488M1644LBB

    Abstract: EM488M1644LB EM488M1644LBB-75F EM488M1644LBB-75FE
    Text: eorex Preliminary EM488M1644LBB 128Mb 2Mx4Bank×16 Synchronous DRAM Features Description • Fully Synchronous to Positive Clock Edge • Single 1.8V ±0.1V Power Supply • LVCMOS Compatible with Multiplexed Address •Programmable Burst Length –1/2/4/8/ full Page


    Original     		EM488M1644LBB 128Mb EM488M1644LBB EM488M1644LB EM488M1644LBB-75F EM488M1644LBB-75FE PDF

    lg crt monitor circuit diagram

    Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		X10679EJGV0SG00 lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY PDF

    EM488M1644VTE

    Abstract: EM488M1644VTE-6F EM488M1644VTE-7F EM488M1644VTE-7FE EM488M1644
    Text: eorex EM488M1644VTE Revision History Revision 0.1 Dec. 2007 - First release. Revision 0.2 (Apr. 2008). - modify improved ICCs Revision 0.3 (Nov. 2008). - modify AC characteristics improved tIH tRAS Nov. 2008 www.eorex.com 1/18 eorex EM488M1644VTE 128Mb (2Mx4Bank×16) Synchronous DRAM


    Original     		EM488M1644VTE 128Mb EM488M1644VTE EM488M1644VTE-6F EM488M1644VTE-7F EM488M1644VTE-7FE EM488M1644 PDF

    HY57V164010C-10

    Abstract: hy57v16 HY57V164010 HY57V168010 1SD30-11-MAR98 HY57V164010CLTC-10S
    Text: HY57V164010C 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010C is organized as 2banks of


    Original     		HY57V164010C HY57V164010C 216-bits 152x4. 1SD30-11-MAR98 400mil 44pin HY57V164010C-10 hy57v16 HY57V164010 HY57V168010 1SD30-11-MAR98 HY57V164010CLTC-10S PDF

    EM488M3244VBA

    Abstract: EM488M3244VBA-75F
    Text: eorex EM488M3244VBA 256Mb 2Mx4Bank×32 Synchronous DRAM Features Description • Fully Synchronous to Positive Clock Edge • Single 3.3V ±0.3V Power Supply • LVTTL Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8


    Original     		EM488M3244VBA 256Mb 625us) EM488M3244VBA EM488M3244VBA-75F PDF

    Untitled

    Abstract: No abstract text available
    Text: eorex EM488M3244VBC Revision History Revision 0.1 May. 2007 - First release(Preliminary) Revision 0.2 (Apr. 2008). Update ICC spec: . Revision 0.3 (Jun. 2008). Update 1. ICC spec: (PAGE 7) - ICC1 110 mA. . - ICC2P 2 mA. - ICC2PS 2 mA. - ICC2N 40 mA.


    Original     		EM488M3244VBC 256Mb EM488M3244VBC PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG EL ECTRONICS INC b?E D • 7^4142 KMM5402000BM 0 0 1 5 1 ^ 4 26b ■ SH6 K DRAM MODULES 2Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5402000BM is a 2M bitsx40 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM5402000BM 2Mx40 KMM5402000BM bitsx40 20-pin 72-pin 22fiF 110ns KMM5402000BM-7 PDF

    44C10

    Abstract: No abstract text available
    Text: DRAM MODULE_ / 8 Mega Byte KMM5402000C/CG/CM Fast Pag/Mode 2Mx40 DRAM SIMM, 5V / GENERAL DESCRIPTION FEATURES The Samsung KMM5402000C is a 2M bit x 40 Dynamic RAM high density memory module. The Samsung KMM5402000C consists of twenty CMOS • Performance Range:


    OCR Scan     		KMM5402000C/CG/CM 2Mx40 KMM5402000C 20-pin 72-pin 44C10 PDF

    HB56D836SBT-AC

    Abstract: power bank 5v 4Mx1 514400C m514400c 473e HM514400BS BLS B56A HM5116400ATS 5117800B
    Text: 72-pin DRAM SIPs *32 »36 Org. Part Number Speeds ns Voltage Refresh Cycle Refresh Period Refresh Modes Power Version Number of Banks Component Base 1Mx32 HB56 A132BV/BU-B/BL HB56A132SBV-B/BL HB56A132BV/BU-C/CL HB56A132SBV-C/CL 60, 70, 80 5V 1K 16 ms 128 ms


    OCR Scan     		72-pin A132BV/BU-B/BL HB56A132SBV-B/BL HB56A132BV/BU-C/CL HB56A132SBV-C/CL HB56A132BW-B/BL HB56A132SBW-B/BL HB56A132BW-C/CL HB56A132SBW-C/CL HB56A232BT-B/BL HB56D836SBT-AC power bank 5v 4Mx1 514400C m514400c 473e HM514400BS BLS B56A HM5116400ATS 5117800B PDF

    GM71C18160AJ7

    Abstract: GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15
    Text: MEMORY LINE-UP l.D R A M I IM H — I IMxl |- h GM71C1000B-60 ZZH H I GM71C 1OO0BJ-60 GM71C 1000BZ-60 UH GM71C 100OBL-6O I GM71C 1000BLJ-60 GM71C1000BLZ-60 — I 256Kx4 [~ H GM71C4256B-60 H GM71C4236BJ-60 I GM7IC42Î6BL-60 GM71C4256BU-60 GM 71C4256BLZ-60 I


    OCR Scan     		GM71C1000B-60 GM71C 1OO0BJ-60 1000BZ-60 100OBL-6O 1000BLJ-60 GM71C1000BLZ-60 GM71C18160AJ7 GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15 PDF

    d4516161

    Abstract: NEC 1216 D451616 4516161 IC-3394 ba6x T8836 D4516161GS d4516 UPD4516161
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.


    OCR Scan     		uPD4516421 uPD4516821 uPD4516161 16M-bit PD4516421, 216-bit 152x4x2, 576x8x2 288x16x2 44-pin d4516161 NEC 1216 D451616 4516161 IC-3394 ba6x T8836 D4516161GS d4516 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escrip tio n The /iPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random-access m em ories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 w ordxbitxbank , respectively.


    OCR Scan     		PD4516421, 16M-bit /iPD4516421, 216-bit 152x4x2, 576x8x2 288x16x2 44-pin 50-pin b42755S PDF

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5


    OCR Scan     		KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000 PDF

    1Mx9 DRAM 30-pin SIMM

    Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
    Text: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C


    OCR Scan     		1Mx32 1Mx33 1Mx36 1Mx40 2Mx32 2Mx36 1Mx9 DRAM 30-pin SIMM KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 4m dram 72-pin simm 32 DRAM 30-pin SIMM PDF