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    2N102 Price and Stock

    Walsin Technology Corporation 0402N102J250CT

    CAP CER 1000PF 25V C0G/NP0 0402
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    DigiKey 0402N102J250CT Reel 90,000 10,000
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    Walsin Technology Corporation 0402N102F500CT

    CAP CER 1000PF 50V C0G/NP0 0402
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    DigiKey 0402N102F500CT Digi-Reel 37,349 1
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    0402N102F500CT Cut Tape 37,349 1
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    Newark 0402N102F500CT Cut Tape 19,740 10
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    TME 0402N102F500CT 10,000
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    Chip-Germany GmbH 0402N102F500CT 276
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    Walsin Technology Corporation 0402N102G500CT

    CAP CER 1000PF 50V C0G/NP0 0402
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    DigiKey 0402N102G500CT Digi-Reel 17,602 1
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    0402N102G500CT Cut Tape 17,602 1
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    0402N102G500CT Reel 10,000 10,000
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    Mouser Electronics 0402N102G500CT 19,536
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    Bristol Electronics 0402N102G500CT 8,672
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    TME 0402N102G500CT 53,500 100
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    Susumu Co Ltd RG2012N-102-D-T5

    RES SMD 1K OHM 0.5% 1/8W 0805
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    DigiKey RG2012N-102-D-T5 Digi-Reel 4,980 1
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    RG2012N-102-D-T5 Cut Tape 4,980 1
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    Mouser Electronics RG2012N-102-D-T5 2,990
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    Walsin Technology Corporation 0402N102J500CT

    CAP CER 1000PF 50V C0G/NP0 0402
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    DigiKey 0402N102J500CT Digi-Reel 4,277 1
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    0402N102J500CT Cut Tape 4,277 1
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    Mouser Electronics 0402N102J500CT 15,325
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    Newark 0402N102J500CT Cut Tape 3,993 10
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    0402N102J500CT Reel 10,000
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    TME 0402N102J500CT 10,000
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    Chip1Stop 0402N102J500CT Cut Tape 9,800
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    2N102 Datasheets (159)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N102 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N102 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N102 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N102 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N102 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N102 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N102 Unknown GE Transistor Specifications Scan PDF
    2N102 Unknown Vintage Transistor Datasheets Scan PDF
    2N102 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N102 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1020 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1020 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1020 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1020 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N1021 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1021 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1021 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1021 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1021 Unknown GE Transistor Specifications Scan PDF
    2N1021 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ...

    2N102 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N102 Transistors Ge NPN Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)70’ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N102 Code3-12

    Untitled

    Abstract: No abstract text available
    Text: 2N1021 Ge PNP Power BJT 3.00 Transistors Transistors Bipolar Ge PNP Power Bipolar . Page 1 of 1 Enter Your Part # Home Part Number: 2N1021 Online Store 2N1021 Diodes Ge PNP Pow er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


    Original     		PDF 2N1021 2N1021 com/2n1021

    Untitled

    Abstract: No abstract text available
    Text: 2N1022 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)120º V(BR)CBO (V)120 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)95õ I(CBO) Max. (A)700u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)5.0


    Original     		PDF 2N1022

    Untitled

    Abstract: No abstract text available
    Text: 2N1022A Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)120º V(BR)CBO (V)120 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)5.0


    Original     		PDF 2N1022A Freq200k

    Untitled

    Abstract: No abstract text available
    Text: 2N1026A Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175õ I(CBO) Max. (A).02u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N1026A

    2N1026A

    Abstract: No abstract text available
    Text: 2N1026A Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Di. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N1026A Availability Online Store


    Original     		PDF 2N1026A 2N1026A STV3208 LM3909N LM3909

    Untitled

    Abstract: No abstract text available
    Text: 2N1027 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)18 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)15 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N1027

    Untitled

    Abstract: No abstract text available
    Text: 2N1026+JAN Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N1026

    2N1025

    Abstract: No abstract text available
    Text: 2N1025 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N1025

    Untitled

    Abstract: No abstract text available
    Text: 2N1026 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N1026

    Untitled

    Abstract: No abstract text available
    Text: 2N1024 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)18 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)15 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N1024

    Untitled

    Abstract: No abstract text available
    Text: 2N1023 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)10m Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)12u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		PDF 2N1023 Freq120MÂ

    Untitled

    Abstract: No abstract text available
    Text: 2N1028 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)12 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N1028

    Untitled

    Abstract: No abstract text available
    Text: 2N1025+JAN Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)35 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)35 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N1025

    2N1021

    Abstract: 2N1021A 2N1022 2N1022A
    Text: ., <Jnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.SA germanium power transistors PNP TO-3 (cont'd) Type* 2N456A 2N456B 2N457A 2N457B 2N458A 2N458B 2N1021A 2N1022A 2N627 2N628 2N629 2N1549&#39; 2N1550&#39;


    Original     		PDF 2N456A 2N456B 2N457A 2N457B 2N458A 2N458B 2N1021A 2N1022A 2N627 2N628 2N1021 2N1021A 2N1022 2N1022A

    2SA987

    Abstract: 2N1026A LOW-POWER SILICON PNP
    Text: LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 NB321F NB321X NB321Y 2N2105 2N2105 2N2105 2N1026A 2N1469 2N940 V410A 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 NB221EH NB221FH NB221XH NB221YH NB021ET NB021FT NB023ET NB023FT 2SA987 NB021FI


    Original     		PDF NB321F NB321X NB321Y 2N2105 2N1026A 2N1469 2N940 V410A 2SA987 LOW-POWER SILICON PNP

    Untitled

    Abstract: No abstract text available
    Text: 2N1022A+JAN Transistors Ge PNP Power BJT Military/High-RelY V BR CEO (V)120º V(BR)CBO (V)120 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)5.0


    Original     		PDF 2N1022A Freq200k

    2N1025

    Abstract: 2N1026 2N1469 CU10A 2N1026 JAN 2N146 vqb 71
    Text: MIL -S - 195GG/78C 17 Mirth 1971 SUPERSEDING «»»» o «A iA A /nen J V liiJ-O “ ¿»O U U / IO D 10 February 1902 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N1025, 2N1028 AND 2N1469 This specification Is mandatory for use by all Departments and Agencies of the Department of Defense.


    OCR Scan     		PDF MIL-5-19500/78C MIL-S-19500/78B 2N1025, 2N1026 2N1469 2N1025 2N1469 CU10A 2N1026 JAN 2N146 vqb 71

    2N458B

    Abstract: 2N1022A 2N4588 transistor ba 752 2N1021A 2N456B 2H102 Transistor BC 227 Germanium Transistor Germanium power
    Text: TYPES 2N456B, 2N457B, 2N458B, 2N1021A AND 2N1022A P-N-P ALLOY-JUNCTION GERMANIUM POWER TRANSISTORS Military and Industrial Applications mechanical data The use of silver a llo y to assem ble the mounting b ase a n d the use of resistance w elding to seal the can ,


    OCR Scan     		PDF 2N456B, 2N457B, 2N458B, 2N1021A 2N1022A 2N45M, 2N1021A, 2N1022A 2N458B 2N4588 transistor ba 752 2N456B 2H102 Transistor BC 227 Germanium Transistor Germanium power

    Untitled

    Abstract: No abstract text available
    Text: rm s A C 'J U — * « « * & D 2N102LD D 2N 102LE D 2N202LD D 2N 202LE -è O R ^ N 'r t i f t M ft UL CSA 5$ nqTUV s e # \ ft b°-? 1 1#M ) aj Viso (tì*-A *ra) ft ft & D2N202LD - - 240 Vrms Vpeak 2.0 Arms Ism 20 Apeak 14 R in 180 750 Hz 6 14 V dc


    OCR Scan     		PDF 2N102LD 102LE 2N202LD 202LE D2NI02LE D2N202LD D2NI02LD 202LD 2N202LE18 D2N202LDI8

    2N3614

    Abstract: 2n3618 2N5901 Germanium Power Devices 2N3612 2N3616 2N3611 2N458 2N5887 2N5900
    Text: GERMANIUM POWER TRANSISTORS Type Number Case Type Y CBO V 2N1137B 2N1138 2N1138A 2N1138B TO-3 TO-3 TO-3 TO-3 100 60 90 100 2N250A 2N251A 2N456 2N456A 2N456B 2N457 2N457A 2N457B 2N458 2N458A 2N458B 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1021 2N1021A 2N1022


    OCR Scan     		PDF 2N1137B 2N1138 2N1138A 2N1138B 2N250A 2N251A 2N456 2N456A 2N456B 2N457 2N3614 2n3618 2N5901 Germanium Power Devices 2N3612 2N3616 2N3611 2N458 2N5887 2N5900

    2n456a

    Abstract: 2N457A 2N458A 2N1022 2N1021 GERMANIUM PNP LOW POWER TRANSISTORS Texas Germanium Germanium power Germanium Power Transistors
    Text: TYPES 2N456A, 2N457A, 2N458A, 2N1021 2N1022 P-N-P ALLOY -JUNGION GERMANIUM POWER TRANSISTORS 310 j m C CHOICE OF 40v, 60v, 80v, 100v, or 120v DEVICES < < r r m *o - « m w 2 H ro 0 = Z Crt z £ LOW Ico HIGH BETA LOW Res LOW THERMAL RESISTANCE mz £ ? p


    OCR Scan     		PDF 2N456A, 2N457A, 2N458A, 2N1021 AND2N1022 2n456a 2N457A 2N458A 2N1022 GERMANIUM PNP LOW POWER TRANSISTORS Texas Germanium Germanium power Germanium Power Transistors

    2N458B

    Abstract: 2N1021 2N1021A 2N456B 2n457a 217B 2N1022A 2N456A MIL-S-19500 FOR POWER LINE TRANSISTOR 2N457B
    Text: M IL -S-19500,'217B 17 January 1972 SUPERSEDING M IL -S -19500 217A 29 S ep tem b er 1965 MILITARY SPECIFICA TION SEMICONDUCTOR DEVICE, TRANSISTORS, PN P , GERMANIUM, HIGH-POW ER T Y PE S 2N456B, 2N457B, 2N458B, 2N1021A, 2N1022A T h is sp e c ific a tio n is m a n d ato ry fo r u se by a ll D e p a rt­


    OCR Scan     		PDF MIL-S-19500, MIL-S-19500 2N456B, 2N457B, 2N458B, 2N1021A, 2N1022A 2N456B 2N457B 2N458B 2N1021 2N1021A 2n457a 217B 2N1022A 2N456A MIL-S-19500 FOR POWER LINE TRANSISTOR

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF