2N167 Search Results

2n1671a

Abstract: unijunction transistor
Contextual Info: 2N1671A SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N1671A is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications PACKAGE STYLE T-18 MOD MAXIMUM RATINGS 2.0 A V o m Ic Pd is s (PULSED) 30 V 450 mW @ Te = 25 0C

Contextual Info: m 2N1671A \ \ SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N1671A is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications PACKAGE STYLE T-18 MOD MAXIMUM RATINGS 2.0 A lc V (PULSED) 30 V ce P diss 450 mW @ Tc = 25 °C

Contextual Info: m 2N1671 \ \ UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N1671 is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications. PACKAGE STYLE TO-18 MOD MAXIMUM RATINGS 2.0 A lc 30 V ce P diss 450 mW @ Tc = 25 °C Tj -65 °C t o +140 °C

Contextual Info: 2N1678 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A) Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain.25 h(FE) Max. Current gain.

2N2160

Contextual Info: , Unc, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 TYPES 2N1671, 2N1671A, 2N1671B, 2N2160 P-N GROWN SILICON UNIJUNCTION TRANSISTOR mechanical data The transistors are hermetically sealed in a welded package with glass-to-metal seal between case and

2N1671B

Contextual Info: 2N1671B UNIJUNCTION TRANSISTOR 26.87 Thyristors Unijunction Transistors PN . Page 1 of 1 Enter Your Part # Home Part Number: 2N1671B Online Store 2N1671B Diodes UNIJUNCTION TRANSISTOR Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

2N1671

Abstract: 2N1671A 2N1671B EQUIVALENT 2N1671 rbbo
Contextual Info: 2N1671 – 2N1671A – 2N1671B PN BAR-TYPE SILICON UNIJUNCTION TRANSISTORS They are designed for medium-power switching, oscillator and pulse timing circuits. Package outline is similar to TO-5 except • • • • Highly Stable Negative Resistance and Firing Voltage

tr 2n2160

Abstract: 2N167 2N1471 2n1671a 2n2160 unijunction
Contextual Info: TYPES 2N1671, 2N1671A, 2N1671B. ¿mm P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS B U L L E T IN N O . D L S 6 8 3 1 8 9 , O C T O B E R 1 9 6 2 - R E V t S E D M A Y 1 96 8 Designed for Medium-Power Switching/ Oscillator and Pulse Timing Circuits • Highly Stable Negative Resistance

MPS9680

Abstract: transistor 2N4258 2N2002 2N2424 2N2425 LOW-POWER SILICON PNP OC202 sor2894 BCY24 CS9020
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 2N2165 2N2166 2N2162 2N2163 2N2167 2N2164 2N1676 2N1677 2N2002 2N2003 ~~~~~~ 15 20 2N3764A 2N3764A 2N2424 BC201 2N3319 2N2280 2N2281 2N864 ~N14~~ 25 30 2N1428 2N1429 2N864A 2N864A 2N864A 2N4006 2N2177 2N2178

2N1671

Abstract: unijunction transistor TRANSISTOR 2n1671
Contextual Info: 2N1671 UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N1671 is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications. PACKAGE STYLE TO-18 MOD MAXIMUM RATINGS 2.0 A o m < lc (PULSED) 30 V P diss 450 mW @ Tc = 25 °C Tj -65 °C to +140 °C

2N1671A

Abstract: unijunction transistor
Contextual Info: 2N1671A SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N1671A is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications PACKAGE STYLE T-18 MOD MAXIMUM RATINGS 2.0 A lc (PULSED) V ce 30 V P diss 450 mW @ Tc = 25 °C

transistor 2N4891

Abstract: 45W UHF 2N4891 2N4947 transistor 2n4852 2SH21 Lv42 2n6120 91kohm 2N494
Contextual Info: ADDITIONAL TRANSISTORS Item Number Part Number Polarity Manufacturer Package Style Description Mati. Unijunction Transistors, Cont'd 2N1671A 2N1671B 2N1671C 2N2160 2N2213 2N2213 2N2417 2N2417A 2N2417B 2N2418 2N2418A 2N2418B 2N2419 2N2419A 2N2419B 2N2420

Contextual Info: 2N1673 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)35 I(C) Max. (A)10m Absolute Max. Power Diss. (W)80m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)50uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: DIGITRON SEMICONDUCTORS 2N1671A - C UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Symbol Value Unit Base 1 – emitter reverse voltage VB1E 30 V Base 2 – emitter reverse voltage VB2E 30 V Interbase voltage VB1B2 35 V RMS emitter current IFRMS 50 mA Emitter peak current

unijunction transistor

Abstract: 2N1671B B2B1 transistor t18
Contextual Info: 2N1671B UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N1671B is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications. PACKAGE STYLE T-18 MOD MAXIMUM RATINGS 2.0 A o m < lc Pd is s (PULSED) 30 V 450 mW @ Tc = 25 °C Tj

2N907 PNP

Abstract: 2N1429 transitron Emihus 2N2425 2N2424 2N828 2N850 2N907 LOW-POWER SILICON PNP
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 2N2165 2N2166 2N2162 2N2163 2N2167 2N2164 2N1676 2N1677 2N2002 2N2003 ~~~~~~ 15 20 2N3764A 2N3764A 2N2424 BC201 2N3319 2N2280 2N2281 2N864 ~N14~~ 25 30 2N1428 2N1429 2N864A 2N864A 2N864A 2N4006 2N2177 2N2178

Contextual Info: 2N1679 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)55 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)30u @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V)3.6 @I(C) (A) (Test Condition)600m

Contextual Info: m 2N1671B \ \ UNIJUNCTION TRANSISTOR DESCRIPTION: PACKAGE STYLE T-18 MOD The 2N1671B is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications. MAXIMUM RATINGS 2.0 A lc V (PULSED) 30 V ce P diss 450 mW @ Tc = 25 °C

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N167A NPN GERMANIUM TRANSISTOR absolute .maximum ratings: (25°C) Voltage! Collector to Base Collector to Emitter Emitter to Base Vn Vm Vm Current

2N2160

Contextual Info: TYPES n 2N2160 P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS B U L L E T I N N O . D L S 68318 9, O C T O B E R 1 9 6 2 - R E V I S E D M A Y 1968 Designed for Medium-Power Switching, Oscillator and Pulse Timing Circuits • Highly Stable Negative Resistance

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

2N1674

Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

2n1841

Abstract: 78m5 2SA248 2SA478 2N2234 transistor m014 2SC23 2SC24 2SC437 2SC438
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT