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    Microchip Technology Inc 2N2979

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    New Jersey Semiconductor Products, Inc. 2N2979

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    Bristol Electronics 2N2979 4,906 1
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    New Jersey Semiconductor Products Inc 2N2979

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    Quest Components 2N2979 3,924
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    Fairchild Semiconductor Corporation 2N2979

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    2N2979 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2979 Motorola Bipolar Transistor, Dual NPN Silicon Annular Transistor - Pol=NPN / Pkg=TO71 / Vceo=60 / Ic=30mA / Hfe=- / fT(Hz)=60M / Pwr(W)=250mW Original PDF
    2N2979 Micro Electronics Semiconductor Devices Scan PDF
    2N2979 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2979 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2979 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N2979 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N2979 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N2979 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N2979 Unknown GE Transistor Specifications Scan PDF
    2N2979 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2979 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2979 National Semiconductor Pro-Electron Transistor Datasheets Scan PDF
    2N2979 Raytheon Selection Guide 1977 Scan PDF
    2N2979 Semitron Dual / Unijunction Transistors Scan PDF
    2N2979DCSM Semelab Dual Bipolar NPN Devices in a Hermetically Sealed LCC2 Ceramic Surface Mount Package for High Reliability Applications Original PDF

    2N2979 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2979DCSM

    Abstract: No abstract text available
    Text: 2N2979DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15


    Original
    PDF 2N2979DCSM MO-041BB) 2-Aug-02 2N2979DCSM

    Untitled

    Abstract: No abstract text available
    Text: 2N2979 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    PDF 2N2979 Freq60M

    BLH DHF 350

    Abstract: LTC1024 BLH DHF LT1024 74C00 74C00 match BLH load cell LT1012 LT1013 BLH Pressure Transducer specifications
    Text: LT1024 Dual, Matched Picoampere, Microvolt Input, Low Noise Op Amp DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Guaranteed Offset Voltage: 50µV Max Guaranteed Bias Current: 25°C: 120pA Max –55°C to 125°C: 700pA Max Guaranteed Drift: 1.5µV/°C Max


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    PDF LT1024 120pA 700pA 112dB 254mm) LT1884 1024fa BLH DHF 350 LTC1024 BLH DHF LT1024 74C00 74C00 match BLH load cell LT1012 LT1013 BLH Pressure Transducer specifications

    TRANSISTOR 2N3609

    Abstract: 2N3609 KELVIN-VARLEY DIVIDER OFM-1A 2N4393 LT318A VARLEY FN507 LT1008 LT1008MH
    Text: LT1008 Picoamp Input Current, Microvolt Offset, Low Noise Op Amp DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Guaranteed Bias Current TA = 25°C: 100pA Max TA = – 55°C to 125°C: 600pA Max Guaranteed Offset Voltage: 120 V Max Guaranteed Drift: 1.5μV/°C Max


    Original
    PDF LT1008 100pA 600pA 114dB LT1112 LT1012 LT1880 OT-23, TRANSISTOR 2N3609 2N3609 KELVIN-VARLEY DIVIDER OFM-1A 2N4393 LT318A VARLEY FN507 LT1008 LT1008MH

    E112 jfet

    Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
    Text: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261


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    PDF LS422 LS423 LS424 LS425 LS426 LS832 LS833 LS4391 LS5911 E112 jfet siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565

    Untitled

    Abstract: No abstract text available
    Text: Type NPN A m bient PD PNP One Side mW Both Sides mW 2N2974 250 300 2N2975 250 2N2976 V CE Sat @ l c / l B H F E @ lc V CE V olts V EB Volts 45 45 6 300 45 45 250 300 45 2N2977 250 300 2N2978 250 2N2979 V CB Volts T racking Electrical Characteristics @ 25°C (One Side)


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    PDF 2N2974 2N2975 2N2976 2N2977 2N2978 2N29791 T0-71

    2920A

    Abstract: NS2N A2JA 2N2920A 2N2913 2N2920
    Text: mmm types 2N2813 t h r u 2N29?o mZSMA 2N2972 THRU 2N2979 DUAL N P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 1 1 1 6 5 . M A R C H 1969 A BR O A D F A M IL Y OF D U A L T R A N S IS T O R S R ECO M M EN D ED FO R Differential Amplifiers High-Gain, Low-Noise, Audio Amplifiers


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    PDF 2N2813 2N2972 2N2979 2920A NS2N A2JA 2N2920A 2N2913 2N2920

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    2n2407

    Abstract: 2N3907 transistor 2N3907 2N3908 2N4651 INTEX 2N2910 2N3680 2N2453 Programmable unijunction
    Text: IN T E X / SE M IT R Ô N IC S CORP 27E D discrete devices GG002flL> 3 semitron hot line 7^ 7 -• ¿7 37 TOLL FREE NUMBER 800-777-3960 multiple devices dual transistors A Vb e -1— Vb E.2 Breakdown Voltate: (volts) T)fH VcB VCE Veb Min. Max. 2N2060 2N2060A


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    PDF 2N2060 2N2060A 2N20609 2N2223 2H2223A 2N2453 2N24S3A 2N2480 2N24S0A 2N2639 2n2407 2N3907 transistor 2N3907 2N3908 2N4651 INTEX 2N2910 2N3680 Programmable unijunction

    2N3055E specification

    Abstract: 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package
    Text: BS/CECC Type No. Polarity 2N 2906\ CV-0 PNP 2N2906A; PNP 1CV' ° 2N2907 1 f f j CV-0 PNP CV-0 PNP 2N2907A 2N2913y 1 50002-186 NPN Dual '2N3054 >2N3055 / ^2N3055E r rX2N3209 1 ^¿2N3209L / • ° 50004-042 50003-020 50004-XXX 50004-XXX 2N3347 2N3348 2N3349


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    PDF ai331 2N2906\ 2N2906A* 2N2907 2N2907A 2N2913y 2N2914\ 2N2915 2N2916 2N2917 2N3055E specification 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package

    KE4416

    Abstract: ST5025 SE5055 CS9013 N3055 transistor bf 175 2N6375
    Text: DH3467C Quad PNP Core Driver DESCRIPTION CONNECTION DIAGRAM The DH3467C consists of four 2N3467 type PNP transistors mounted in a 14-pin molded dual-in-line package. The device is primarily intended fo r core memory application requiring operating currents


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    PDF DH3467C 2N3467 14-pin O-106 O-220 KE4416 ST5025 SE5055 CS9013 N3055 transistor bf 175 2N6375

    2n3866s

    Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
    Text: M il / Aerospace Division Sem elab HERMETIC SURFACE MOUNT PACKAGES SEMELAB offers seven ceramic package styles intended for use in Space Vehicles, Aircraft and other critical applications all intended for Surface Mount Applications. SOT23 HERMETIC CERAMIC SURFACE MOUNT PACKAGE LCC1


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    PDF BYV34-300SM BYV34-400ASM BYV34-- 400RSM 400SM BYV34-500ASM BYV34-500RSM BYV34-500SM LM137-SM 2n3866s DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2N3904DCSM

    Abstract: 2N2222ADCSM 2N3965
    Text: 61 33167 0G00105 S 37E D SEMELAB LTD BS/CECC Polarity Package v CEO •c cont 50003-017 50003-017 50003-017 50003-017 NPN NPN NPN NPN NPN T077 Dual T03 T03 T03 T03 50 60 80 60 80 0.03 10 10 10 10 •150-600 25-90 25-90 50-150 50-150 NPN NPN NPN NPN NPN T039


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    PDF 2N3680 2N3713 2N3714 2N3715 2N3716 2N3719 2N3720 2N3724 2N3724A 2N3725 2N3904DCSM 2N2222ADCSM 2N3965

    2N3806 2N3906

    Abstract: 2N3907 2N3904DCSM 2N2222ADCSM hirel bfy81 2N2640DCSM 2N3904D
    Text: 37E S E M E L A B LTD 5133167 □□□□□17 T> fl ISMLB 7 Type No. Reliability Polarity Option 2N3763 2N3764 2N3765 2N3766 2N3767 HI-REL HI-REL HI-REL HI-REL HI-REL PNP PNP PNP NPN NPN 2N3771 2N3772 2N3773 2N3782 2N3789 SCREEN SCREEN SCREEN SCREEN CECC ^


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    PDF 2N3763 2N3764 2N3765 2N3766 2N3767 2N3771 2N3772 2N3773 2N3782 2N3789 2N3806 2N3906 2N3907 2N3904DCSM 2N2222ADCSM hirel bfy81 2N2640DCSM 2N3904D

    2n2222a SOT23

    Abstract: 2N3904DCSM 2n1485 2N2453 2N3680 2n2222 sot23 BFX81 2N1132 2N1483 2N1484
    Text: L -S tl'-O f " T - 3 3 - o7 iS E M E L A B MANUFACTURING • 37E SEMELAB LTD 6133167 □ □ □0CH 7 Package v CEO "2N 708'\ CV-0 2N 697 CV-0 2N 930 4 CV-0 2N1132 CV-0 2N1483/ CV-0 BS-0 NPN NPN NPN PNP NPN T018 T039 T018 T039 T08 15 40 45 35 40 0.1 0.5 0.1


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    PDF T-33-Ã 2N1132 2N1483/ 2N1484^ 2N1485 2N1486 2N1613 2N1711 2N2060 2N2192 2n2222a SOT23 2N3904DCSM 2n1485 2N2453 2N3680 2n2222 sot23 BFX81 2N1483 2N1484

    BFX36

    Abstract: 2N3904DCSM 2N3904D 2N3680 BFT39 2N2222ADCSM BFX11 BFY84 BLY11 BFT40
    Text: 37E D SEMELAB LTD 31331B7 OOOODTb fl jl S E M E L A B MANUFACTURING! • c BS/CECC Polarity Package v CEO cont h F E BFT37 BFT39 BFT40 BFT41 BFT57 BS-0 BS-0 BS-0 BS-0 BS-0 PNP NPN NPN NPN NPN T039 T039 T039 T039 T018 100 80 60 50 160 5 1 1 1 0.2 50-200 250 typ


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    PDF fll331fl7 BFT37 BFT39 BFT40 BFT41 BFT57 BFT58 BFT59 BFT60 BFT61 BFX36 2N3904DCSM 2N3904D 2N3680 2N2222ADCSM BFX11 BFY84 BLY11

    555 7490 7447 7 segment LED display

    Abstract: SN76670 SNF10 rsn 3404 rsn 3305 NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG mc2051 SN76131 SN76005 Ross Hill SCR Contactor
    Text: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS


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    PDF 54S/74S 54H/74H 54L/74L TIH101 555 7490 7447 7 segment LED display SN76670 SNF10 rsn 3404 rsn 3305 NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG mc2051 SN76131 SN76005 Ross Hill SCR Contactor

    LT/SG3527A

    Abstract: No abstract text available
    Text: Operational Amplifiers LT-1012 LT-1012 Low-Power Precision Operational Amplifiers RC4097 Data Sheet. The LT-1012 can improve the performance of a wide range of precision operational amplifier applications, including reference circuits, thermocouple amplifiers,


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    PDF LT-1012 RC4097 LT-1012 LT/SG3527A

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    1.0 k mef 250

    Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
    Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a


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    PDF semi-820 BYX22-400 BYX22-600 BYX22-800 BYX26-60 YX26-150 BYX36-1 BYX36-300 1.0 k mef 250 ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072

    2N3904DCSM

    Abstract: 2N2222ADCSM 2NA931 2N3810DCSM 2NA999 2NA930
    Text: Ö1331Ö7 GGD043Ö TT1 4 ÔE D SEMELABL SEMELAB IS MLB LTD * 27. ^ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2NA898 2N4899 2NA900 2NA901 2N4902 2NA903 2NA90A 2NA905 2NA906 2NA907 2NA908 2NA909 2NA910 2NA911 2NA912 2NA913 2NA91A


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    PDF GGD043Ö 2NA898 2N4899 2NA900 2NA901 2N4902 2NA903 2NA90A 2NA905 2NA906 2N3904DCSM 2N2222ADCSM 2NA931 2N3810DCSM 2NA999 2NA930

    2N3800

    Abstract: 2N3805 2N3726 2N3729 2N3804 2N3804A 2N2978 2n3423 2N3803 2N3812
    Text: Discrete Devices Transistors Cont. Differential and Dual Amplifiers (C ony_ u r i a u i c i c A m bien t P q Type Polarity One Both Side Sides mW mW V c E (S a t) @ Ic / lß Hf e @ 'C VCB VCE Tracking Electrical Characteristics @ 25° C (One Side) M axim u m Ratings


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    PDF 2n2977 to-71 2n2978 2n2979 2n2980 to-78 2N3800 2N3805 2N3726 2N3729 2N3804 2N3804A 2n3423 2N3803 2N3812