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    2N303 Price and Stock

    Susumu Co Ltd RG2012N-303-W-T1

    RES SMD 30K OHM 0.05% 1/8W 0805
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    DigiKey RG2012N-303-W-T1 Digi-Reel 2,838 1
    • 1 $0.92
    • 10 $0.651
    • 100 $0.4437
    • 1000 $0.32942
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    RG2012N-303-W-T1 Cut Tape 2,838 1
    • 1 $0.92
    • 10 $0.651
    • 100 $0.4437
    • 1000 $0.32942
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    RG2012N-303-W-T1 Reel 2,000 1,000
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    Mouser Electronics RG2012N-303-W-T1 1,282
    • 1 $0.92
    • 10 $0.651
    • 100 $0.444
    • 1000 $0.288
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    Susumu Co Ltd RG2012N-303-B-T1

    RES SMD 30K OHM 0.1% 1/8W 0805
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    DigiKey RG2012N-303-B-T1 Reel 1,000
    • 1 -
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    • 1000 $0.18617
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    Susumu Co Ltd RG2012N-303-D-T5

    RES SMD 30K OHM 0.5% 1/8W 0805
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    DigiKey RG2012N-303-D-T5 Reel 5,000
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    • 10000 $0.09526
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    Mouser Electronics RG2012N-303-D-T5
    • 1 $0.35
    • 10 $0.25
    • 100 $0.172
    • 1000 $0.104
    • 10000 $0.092
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    Susumu Co Ltd RG2012N-303-C-T5

    RES SMD 30K OHM 0.25% 1/8W 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG2012N-303-C-T5 Reel 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.13125
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    Susumu Co Ltd RG2012N-303-W-T5

    RES SMD 30K OHM 0.05% 1/8W 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG2012N-303-W-T5 Reel 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.28512
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    Mouser Electronics RG2012N-303-W-T5
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.28
    		Get Quote
    Find more 2N303 price and stock on Findchips.com

    2N303 Datasheets (138)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N303 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N303 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N303 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N303 Unknown GE Transistor Specifications Scan PDF
    2N303 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N303 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N303 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N303 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N303 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N303 Unknown Vintage Transistor Datasheets Scan PDF
    2N3030 Microsemi SCRs 0.5 Amp, Planar Scan PDF
    2N3030 Microsemi SCR 0.5 A, Planar Scan PDF
    2N3030 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3030 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    2N3030 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    2N3030 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3030 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3030 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    2N3030 Solid State Devices Silicon Controlled Rectifier Selection Guide Scan PDF
    2N3030+JAN Defense Electronics Supply Center 30V V[drm] Max., 500mA I[T] Max. Silicon Controlled Rectifier Scan PDF
    ...

    2N303 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 2N3027-2N3032 0.5 AMP SILICON CONTROLLED RECTIFIER Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.


    Original     		PDF 2N3027-2N3032 MIL-PRF-19500, 2N3027 2N3030 2N3028 2N3031 2N3029 2N3032 500mA 250mA

    2N3033

    Abstract: No abstract text available
    Text: , One, J. C/ TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3033 SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3033 is Designed for Avalanche-Mode Very Fast Switching Applications. PACKAGE STYLE TO-18


    Original     		PDF 2N3033 2N3033 200mA 100mA

    2N3036

    Abstract: No abstract text available
    Text: 2N3036 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N3036 O205AD) 10/10m 17-Jul-02 2N3036

    Sfor1b42

    Abstract: 2SF102B CW12B 2N50S1 E0102FB FBase-F Package SFOR3B
    Text: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 15 20 25 30 35 40 45 50 55 2N88S 2N4333 2N5724 GA10l GA200 GA200A GB200 GB200A AAl00 AA107 2N3031 AA114 2N3028 MCR203 E0100FD E0102FA E0102FB E0102FD 10101 MMBS50S1 BRX45 BRX45 C203YY SlYY BRY55-S0 BRY55SS0


    Original     		PDF 2N88S 2N4333 2N5724 GA10l GA200 GA200A GB200 GB200A AAl00 AA107 Sfor1b42 2SF102B CW12B 2N50S1 E0102FB FBase-F Package SFOR3B

    EC103A

    Abstract: To226AB MCR100-2 TAG 85 22 TECCOR EC103A SF1B12 226AB SN051 TO-226-AB BT149A
    Text: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 15 20 25 30 35 40 GB201 GB201A SN051 AA101 AA10S 2N3032 AA115 2N3029 MCR204 E0100AO 1;0102Aj\ E0102AB E0102AO P0102AA P0102AB 10102 MMBS50S2 X0102AA BT149A BT149A 2N66B1 2N1931 P0109AA P0109AB P0107AA


    Original     		PDF GB201 GB201A SN051 AA101 AA10S 2N3032 AA115 2N3029 MCR204 E0100AO EC103A To226AB MCR100-2 TAG 85 22 TECCOR EC103A SF1B12 226AB TO-226-AB BT149A

    Untitled

    Abstract: No abstract text available
    Text: 2N3036 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N3036 O205AD) 10/10m 19-Jun-02

    2N3036

    Abstract: No abstract text available
    Text: 2N3036 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N3036 O205AD) 10/10m 1-Aug-02 2N3036

    2n3035

    Abstract: 2N1994 bls100 2N1169 500HM ST5610 BLS100 siliconix
    Text: ADDITIONAL TRANSISTORS Item Number Part Number Manufacturer PolarIty Mati. Description Package Style Avalanch Transistors CK273 2N3033 2N3034 2N3035 2N5271 ASZ23 5 SemiconTech See Index See Index See Index See Index NthAmerSemi NPN NPN NPN NPN NPN PNP Si Si


    Original     		PDF CK273 2N3033 2N3034 2N3035 2N5271 ASZ23 BVCBO-25V. Pt-300mW BVCBO-160V IC-10A 2N1994 bls100 2N1169 500HM ST5610 BLS100 siliconix

    2N3036

    Abstract: No abstract text available
    Text: 2N3036 Si NPN Lo-Pwr BJT 16.24 Transistors Transistors Bipolar Si N. 1 of 2 Home Part Number: 2N3036 Online Store 2N3036 Diodes Si NPN Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original     		PDF 2N3036 com/2n3036 2N3036

    2N3035

    Abstract: TRANSISTOR 2N3035
    Text: 2N3035 SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3035 is Designed for Avalanche-Mode Very Fast Switching Applications. PACKAGE STYLE TO-18 MAXIMUM RATINGS Ie 200 mA Vc b 50 V Pd i s s 1.0 W @ Te $ 25 0C Tj -65 to + 200 °C Ts t g -65 to + 200 0C


    OCR Scan     		PDF 2N3035 TRANSISTOR 2N3035

    JANTX 2N3028

    Abstract: 2N3028 2N3027 2N3029 JAN 2N3029 2N3030 2N3031 2N3032
    Text: JAN & JANTX 2N3027-2N3032 SCRs 0.5 Amp, Planar Ì1 -fi e*C<SIJÉANÛÛE F EA T U R E S • JA N and JA N T X Types Available • Fu lly Characterized for “Worst C ase " Design • Passivated Planar C onstruction for M axim um R e lia b ilit y a n d P a ra m e te r U n ifo rm it y


    OCR Scan     		PDF 2N3027-2N3032 12/is 2N3027 JANTX 2N3028 2N3028 2N3029 JAN 2N3029 2N3030 2N3031 2N3032

    2N3555

    Abstract: 2N4110 2n2344 2N1595 2n2009 2N6332 2N3005 2N4212 2N3003 2n6335
    Text: SOLID SILICON CONTROLLED RECTIFIERS ON STATE CURRENT piv CASE — =£!!L 275mA 280mA 350mA 390mA 500mA 1.0A 1.3A TO-18 TO-18 TO-18 TO-18 TO-5 TO-18 TO-5 TO-5 TO-5 2N4212 2N2009 2N2322 2N2322A 2N2344 2N3027 2N3030 2N3555 2N4213 2N2010 2N1595 2N1595A 2N2028


    OCR Scan     		PDF 180mA 200mA 260mA 275mA 280mA 350mA 390mA 500mA T0-39 2N4212 2N3555 2N4110 2n2344 2N1595 2n2009 2N6332 2N3005 2N3003 2n6335

    TE 555-1

    Abstract: 419 on 80 GA201A 2n3031 2n2031
    Text: Micmsemj Silicon Controlled Rectifiers Part Num ber GA200 GA200A GA300 GA300A GA201 GA201A GA301 GA301A GA100 GA101 GA102 2N3027 2N3Q30 ID100 JAN2N3027 2N3030 JANTX2N3027 2N3030 2N3028 2N3031 AA100 AA107 AA114 ID101 JAN2N3028 2N3031 JANTX2N3028


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: M I C R O S E M I C O R P / ÜJATERTOÜJN SQE D G 0 1 E 5 2 b R24 • U N I T SCRs JAN & JANTX 2N3027-2N3032 0.5 Amp, Planar T ^ j r - n FEA TU R ES D E S C R IP T IO N • JAN and JANTX Types Available • Fully Characterized for “Worst Case” Design • Passivated Planar Construction for Maximum


    OCR Scan     		PDF 2N3027-2N3032 12/is 2N3027

    Untitled

    Abstract: No abstract text available
    Text: SCRs JAN & JANTX 2N3027-2N3032 0.5 Amp, Planar Ì1 - fi e*C<SIJÉANÛÛE FEATU RES DESCRIPTION • JAN and JANTX Types Available • Fully Characterized for “Worst Case" Design • Passivated Planar Construction for Maximum The 2N3027 series of planar SCRs controlled switches are intended for use in


    OCR Scan     		PDF 2N3027-2N3032 2N3027

    2n3033

    Abstract: No abstract text available
    Text: m 2N3033 \ \ SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3033 is D esigned fo r A valanche-M ode V ery Fast Switching A pplications. MAXIMUM RATINGS 200 mA lc V 100 V ce P diss 1.0 W @ Tc = 25 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 175 °C /W


    OCR Scan     		PDF 2N3033 2N3033

    2N3035

    Abstract: No abstract text available
    Text: m 2N3035 \ \ SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3035 is Designed for Avalanche-Mode Very Fast Switching Applications. MAXIMUM RATINGS lc 200 mA V cb 50 V P diss 1.0 W @ Tc = 25 °C Tj -65 to + 200 °C T stg -65 to + 200 °C 0JC 175 °C/W CHARACTERISTICS


    OCR Scan     		PDF 2N3035 2N3035

    2n3037

    Abstract: LT 752 2N2243 2N3039 2N3038
    Text: TYPES 2N3037, 2N3038 N-P-N SILICON TRANSISTORS B U L L E T I N NO. D L - S 634251, A U G U S T 1963 F O R G E N E R A L P U R P O S E A M P L IF IE R A N D S W IT C H IN G A P P L IC A T IO N S • High Breakdown Voltage Com bined With Very Low Saturation Voltage


    OCR Scan     		PDF 2N3037, 2N3038 2N2243 2N3039 2N3040 2N3037 LT 752

    2N3039

    Abstract: 2N3037 2N3040 1N3M 2n3038
    Text: TYPES 2N3039, 2N3040 P-N-P SILICON TRANSISTORS B U L L E T IN N O . DL-S 6 3 4 2 3 1 , A U G U S T 1 9 6 3 FOR G E N E R A L PURPOSE AM PLIFIER A N D SWITCHING APPLICATIONS • High Breakdown Voltage Combined With Very Low Saturation Voltage • DC Beta — Guaranteed From 100 jua to 500 ma


    OCR Scan     		PDF 2N3039, 2N3040 2N3037 2N3038 2N303* 2N3039 1N3M 2n3038

    2N3033

    Abstract: No abstract text available
    Text: 2N3033 SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3033 is Designed for Avalanche-Mode Very Fast Switching Applications. PACKAGE STYLE TO-18 MAXIMUM RATINGS 200 mA < o m Ie 100 V p d is s 1.0 W @ Te = 25 °C Tj -65 0C to '200 0C Ts t g -65 0C to '200 0C


    OCR Scan     		PDF 2N3033

    2n3028

    Abstract: 2N3028 JANTX
    Text: SCRs JAN & JANTX 2N3027-2N3032 0.5 Amp, Planar FEA T U RE S • JA N and JA N T X Types Available • Fully Characterized for “Worst C ase” Design • Passivated Planar Construction for Maxim um R eliability and Parameter Uniform ity • Low On-State Voltage and Fast Sw itching


    OCR Scan     		PDF 2N3027-2N3032 12/us 2N3027 2n3028 2N3028 JANTX

    2N3036

    Abstract: LG 631 IC
    Text: Datasheet 2N3036 ~ - - • NPN SILICON TRANSISTOR Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3036 is a Silicon NPN Epitaxial Planar Transistors mounted in a


    OCR Scan     		PDF 2N3036 20MHz 150mA, LG 631 IC

    2N3029

    Abstract: JANTX 2N3028 2N3028 2N3027 2N3030 2N3031 2N3032 UNITRODE 3027
    Text: JAN & JANTX 2N3027-2N3032 SCRs 0.5 Amp, Planar FEATURES D E S C R IP T IO N • JAN and JANTX Types Available • Fully Characterized for "W orst Case" Design • Passivated Planar Construction for Maximum Reliability and Parameter Uniformity • Low On-State Voltage and Fast Switching


    OCR Scan     		PDF 2N3027-2N3032 12/is 2N3027 2N3029 JANTX 2N3028 2N3028 2N3030 2N3031 2N3032 UNITRODE 3027

    2n3036

    Abstract: No abstract text available
    Text: TYPE 2N3036 N-P-N SILICON TRANSISTOR B U L L E T IN NO . D L -S 734232, A U G U S T 1 9 6 3 - R E V IS E D M ARC H 1973 FOR G E N E R A L PURPOSE, M E D IU M -P O W E R A M P L IF IE R A N D SW IT C H IN G A P P L IC A T IO N S • High Power Dissipation Capability: 1 0 w a t T c = 25°C


    OCR Scan     		PDF 2N3036