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Microchip Technology Inc 2N3620 SMALL-SIGNAL BJT
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DigiKey	2N3620	Bulk			100	1 - 10 - 100 $26.55 1000 $26.55 10000 $26.55	Buy Now
Avnet Americas	2N3620	Bulk		22 Weeks	100	1 - 10 - 100 $27.88698 1000 $25.43544 10000 $25.43544	Buy Now
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Newark	2N3620	Bulk			100	1 - 10 - 100 $26.55 1000 $25.53 10000 $25.53	Buy Now
Future Electronics	2N3620				100	1 - 10 - 100 $28.38 1000 $28.38 10000 $28.38	Buy Now

Microchip Technology Inc	2N3620			22 Weeks		1 $28.59 10 $28.59 100 $28.59 1000 $28.59 10000 $28.59	Buy Now
Onlinecomponents.com	2N3620					1 - 10 - 100 $25.36 1000 $25.36 10000 $25.36	Buy Now
NAC	2N3620				12	1 $29.19 10 $29.19 100 $26.88 1000 $24.91 10000 $24.91	Buy Now
Master Electronics	2N3620					1 - 10 - 100 $25.36 1000 $25.36 10000 $25.36	Buy Now

2N3620 Datasheets (11)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2N3620		Motorola	Motorola Semiconductor Datasheet Library		Scan	PDF
2N3620		Unknown	Transistor Shortform Datasheet & Cross References		Scan	PDF
2N3620		Unknown	Basic Transistor and Cross Reference Specification		Scan	PDF
2N3620		Unknown	Shortform Transistor PDF Datasheet		Short Form	PDF
2N3620		Unknown	Catalog Scans - Shortform Datasheet		Scan	PDF
2N3620		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF
2N3620		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF
2N3620		Unknown	Shortform Transistor Datasheet Guide		Short Form	PDF
2N3620		Unknown	Vintage Transistor Datasheets		Scan	PDF
2N3620		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
2N3620		PPC Products	Transistor Short Form Data		Scan	PDF

2N3620 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N3622 Abstract: 2N3445 2N3446 2N3448 2n3626 TO61 MT27 2n3624 2n3492 2N1724 solitron Text: high-rei power transistors 88 SILICON NPN TRANSISTORS 1 0 Amp BREAKDOWN VOLTAGES VeB VEB VeE TYPE NUMBER CASE SIZE 2N1724 2N1725 2N3445 2N3446 2N3447 2N3448 2N3487 2N3488 2N3489 2N3490 2N3491 2N3492 2N3620 2N3621 2N3622 2N3624 2N3625 2N3626 2N3628 2N3629	Original	2N1724 2N1725 2N3445 2N3446 2N3447 2N3448 2N3487 2N3488 2N3489 2N3490 2N3622 2n3626 TO61 MT27 2n3624 2n3492 2N1724 solitron	PDF
2N3633 Abstract: TIP300 2N3609 2SA8140 MH0816 BCX53 Rohm 2sb631 hitachi 2N3566 2N3519 sk3025 Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M	Original		PDF
2N1724 Abstract: 2N3624 Text: 8440355 SPACE POWER ELECTRONICS "'"""SPACE POWER ELECTRONICS 89C flT 00107 D 7 J 5 . E DF\| 6440355 DDD01D7 Hi-Rel PLANAR P O W E R - 1 0 AMP WH TO-66 40W@T =100°C TO-5 5W@T =100°C o P TO-3 80W@T =100°C *A11 leads e l e c t r i c a l l y i s o l a t e d from case	Original	DDD01D7 2N1724 2N1725 2N2101 2N2811 2N2812 2N2813 2N2814 2N3445 2N3446 2N3624	PDF
2SB641 r Abstract: 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524 Text: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30	Original	2N1221 2S3030 BCZ10 2S302 HA9048 TP3S38 2N923 BCY28 2SB641 r 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524	PDF
BF689 Abstract: 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36 Text: STI Type: BF200 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200 VCBO: 30 VCEO: 20 hFE min: 15 hFE max: hFE A: 3.0 VCE: VCE A: hfe: fT: 550 Case Style: TO-206AF/TO-72: Industry Type: BF200 STI Type: BF183 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200	Original	BF200 O-206AF/TO-72: BF183 BF206 BF208 BF689 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36	PDF
2N3609 Abstract: 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625 Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate	Original	RN5816 RN5B16 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 2N3609 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625	PDF
2N3189 Abstract: 2N3186 Text: 8440355 SPACE POWER ELECTRONICS "'"""SPACE POWER ELECTRONICS 89C flT 00107 D 7 J 5 . E DF\| 6440355 DDD01D7 Hi-Rel PLANAR P O W E R - 1 0 AMP WH TO-66 40W@T =100°C TO-5 5W@T =100°C o P TO-3 80W@T =100°C *A11 leads e l e c t r i c a l l y i s o l a t e d from case	Original	DDD01D7 2N1724 2N1725 2N2101 2N2811 2N2812 2N2813 2N2814 2N3445 2N3446 2N3189 2N3186	PDF
2N3633 Abstract: transitron 2N3596 INDUSTRO 2n3605 transitron 2n3605 TEXAS 2N3583 philco-ford 2N3609 Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 >= 40 45 50 BFT28B BFT28B STIP2006 BSP15 BST15 BST15 MJ5415 MJ5415 MM5415 MM5415 MM5415 ST5415 2N5415 TRSP5415 TRSP2006 STIP20 STIP205 ~~~~~~X 55 60 65 70 75 80 85 90 TRSP20X TRSP20X5 TRSP20X5	Original		PDF
aeg diode Si 61 L Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books	OCR Scan	11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680	PDF
2N3622 Abstract: 2N3598 2N3599 2N3619 2N3620 2N3621 2N3623 2N3627 2N3628 2N3629 Text: • NPN D E V IC E PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRI E A K D O V V N V O LT A G E S SAT . V O L T A G ES M<3 X . h F:E 'c (V) 'c (A) Mm Max. (A) 'b (A) V CE (V) V BE (V) V CE CASE V CB VCE V EB 2N3598 TO-63 80 60 8 *■» t. 10 40 120	OCR Scan	2N3598 2N3599 2N3619 2N3620 2N3621 2N3622 2N3623 2N3627 2N3628 2N3629	PDF
MC2259 Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214 Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the	OCR Scan		PDF
RCA SK CROSS-REFERENCE Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1 Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered	OCR Scan		PDF
transistor c2060 Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,	OCR Scan	AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF

2n5462 national semiconductor Abstract: PN5003 MMBFJ270 2N3620 national j270 to92 jfet p channel PN5033 2N3820 f4 TO92 2n5462 Text: böE D natl t.SD113D □ □ 3 T 4 ci? 754 • NSC5 s e m ic on d d is c re te P Channel tfP @ V DS i0 Device M Bss (V) M in (V) Crss (PF) M ax (PF> M ax Max 10000 0.8 5 32 16 1000 1 5 25 1000 1 4 1000 1 4 1000 1.5 5 7 -1 5 1000 1.5 5 7 -1 5 1000 2 6 7	OCR Scan	SD113D 2N3620 T0-92 PN5033 2N5460 MMBF5460 O-236* 2N5461 MMBF5461 2n5462 national semiconductor PN5003 MMBFJ270 national j270 to92 jfet p channel 2N3820 f4 TO92 2n5462	PDF