2N3954 TRANSISTOR Search Results

2N3954 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

2N3954 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2N3954 MONOLITHIC DUAL N-CHANNEL JFET The 2N3954 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The 2N3954 family are matched JFET pairs for differential amplifiers. The 2N3954 family of general purpose JFETs is characterized for low and medium	Original	2N3954 2N3954	PDF
Untitled Abstract: No abstract text available Text: 2N3954 MONOLITHIC DUAL N-CHANNEL JFET The 2N3954 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The 2N3954 family are matched JFET pairs for differential amplifiers. The 2N3954 family of general purpose JFETs is characterized for low and medium	Original	2N3954 2N3954	PDF
2N3954 Abstract: 2N3956 2N3955 TRANSISTOR 2n3955 2n3956 equivalent transistor NJ16 2N3954 Transistor Text: Databook.fxp 1/14/99 11:29 AM Page B-5 B-5 01/99 2N3954, 2N3955, 2N3956 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Low and Medium Frequency Differential Amplifiers ¥ High Input Impedance Amplifiers 2N3954	Original	2N3954, 2N3955, 2N3956 2N3954 2N3955 2N3954 2N3956 2N3955 TRANSISTOR 2n3955 2n3956 equivalent transistor NJ16 2N3954 Transistor	PDF
Untitled Abstract: No abstract text available Text: SPRAGUE/S EM IC ON D GROUP 851 4019 SPRAGUE, ^ D • S E M I C O N D S / ICS 93D 03616J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Monolithic Dual Devices ELECTRICAL CHARACTERISTICS at TA = 25°C loss V gS[oH) Igss V BHJGSS Device Type 2N3954	OCR Scan	03616J) 2N3954 2N3955 2N3956 2N3957 2N5045 2N5046 2N5047 2N5196 2N5197	PDF
TRANSISTOR 2n3955 Abstract: 2N3954 2N3954A 2N3955A 2N3955 2N3956 2N3954-2N3958 2n3957 transistor 2N3 X2N3954 Text: C A L O G I C CORP 4ÔE D 1AM432B OOOOBTb 4 CGC W U IO Q Iv w CORPORATION T n n 2N3954-2N3958/2N3954A /2N3955A FEATURES • • • • • ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted Low Offset and Drift Low Capacitance Low Noise Superior Tracking Ability	OCR Scan	1AM432B 2N3954-2N3958/2N3954A /2N3955A 250mW 500mW 86mW/Â 200nA TRANSISTOR 2n3955 2N3954 2N3954A 2N3955A 2N3955 2N3956 2N3954-2N3958 2n3957 transistor 2N3 X2N3954	PDF
Untitled Abstract: No abstract text available Text: B5 9 -9 7 2N3954, 2N3955, 2N3956 N-CHANNEL DUAL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW AND MEDIUM FREQUENCY A bsolute m axim um ratin gs at TA = 2 5 'C Reverse Gate Source & Reverse Gate Drain Voltage - 50 V Gate Current 50 mA Total Device Power Dissipation each side	OCR Scan	2N3954, 2N3955, 2N3956 2N3954 2N3955 ProcessNJ16 0GQG725	PDF
2N3954 Abstract: 2n3955 Text: CALOGIC CORP 4ÔE D 1Ö44325 ÜDDDSIb 4 •CGC caloric CORPORATION \J T l l - Z T 2N3954-2N3958/2N3954A/2N3955A FEATURES • • • • • ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted Low Offset and Drift Low Capacitance Low Noise Superior Tracking Ability	OCR Scan	2N3954-2N3958/2N3954A/2N3955A 250mW 500mW 200MHz 1256C 200yA 2N3954 2n3955	PDF
Untitled Abstract: No abstract text available Text: 2N3954 Transistors Dual N-Channel JFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A)50m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)100p @V(GS) (V) (Test Condition)30 V(GS)off Min. (V) I(DSS) Max. (A)5.0m	Original	2N3954	PDF
J555 Abstract: 2SK17 2SK40 2SK105 E J231 transistor j556 2N4221 transistor j557 Text: Databook.fxp 1/13/99 2:09 PM Page F-6 F-6 01/99 NJ16 Process Silicon Junction Field-Effect Transistor ¥ Low Current Switch ¥ General Purpose Amplifier ¥ High Breakdown Voltage G S-D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj	Original	2N3954, 2N3955 2N3956 2N3957, 2N3958 2N4220, 2N4220A 2N4221, 2N4221A 2N4338, J555 2SK17 2SK40 2SK105 E J231 transistor j556 2N4221 transistor j557	PDF
NPD8301 Abstract: J406 dual NPD8303 J406 2N3934 2N5561 2N3954-6 2N5045 2N5454 2N3935 Text: 1 This JFET Transistors NATL Material National áuá Semiconductor N-Channel JFETs Typ« No. Case Style VGS1-2 D rift G„ Gfs C\|ss C ru BV R G ou CMRfl Vg» Vp Igss loss Gis GosCI-2 Iq H G 2 Process Pkg. Goss Idss •g Vos O iV /T PA) jim hos Oimho) (dB)	OCR Scan	tSD113D 2N5515 2N5516 2N5517 2N5518 9N5519 2N5520 2N5521 2N5522 2N5523 NPD8301 J406 dual NPD8303 J406 2N3934 2N5561 2N3954-6 2N5045 2N5454 2N3935	PDF
Untitled Abstract: No abstract text available Text: HARRIS S E M I C O N D S E C T O R 27E D B 4 3 0 2 2 7 1 0 D l S 7 n? ? IHAS V-Z7-ZST -3 /-Z 5 Differential Amplifier Transistors — Monolithic Duals Junction FETs — N-Channel Vqsi-2 AVg s Vp V *G pA Max SVqss V Min Min Max Min Max Min Max -50 -50 -50 -50	OCR Scan	200ftA 2N5912 2N6483 2N6484 2N6485 IT500 IT501 IT502 IT503 IT504	PDF
Untitled Abstract: No abstract text available Text: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. *13 D • QSG433Ô a D G 3 b ì T 7 ~ Ì m ^ S E M IC O N D S / I C S 930 03616J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Monolithic Dual Devices ELECTRICAL CHARACTERISTICS at Tfl = 25°C lo ss	OCR Scan	QSG433Ã 03616J) NJ35D	PDF
2N5561 Abstract: 2N5562 2N5563 2N5045 2N3921 2N3922 2N3934 2N3935 2N3954 2N3954A Text: i T " - • 7 - ^ r SEMICONDUCTORS INC CHE D \| 013tbSD □□□□SÖT 7 \| "J" Type Field Effect Transistors OPERATING CONDITIONS FOR THESE CHARACTERISTICS OP. CHAR. IV q s I - 2 1 D R IFT /uV/'C Vos (mV) AV q s Max Max •g (pA) Max Gf fjrnhos Min Max	OCR Scan	IVQSI-21 2N3921 2N3922 2N3934 2N3954-6 2N3935 2N3954A 2N3954 2N3955A 2N5561 2N5562 2N5563 2N5045	PDF
Untitled Abstract: No abstract text available Text: LS301 LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 2000 @ 1.0µA TYP. VERY HIGH GAIN LOW OUTPUT CAPACITANCE COBO ≤2.0pF TIGHT VBE MATCHING \|VBE1-VBE2\| = 0.2mV TYP. HIGH fT 100MHz C1 ABSOLUTE MAXIMUM RATINGS NOTE 1	Original	LS301 LS302 LS303 100MHz 250mW 500mW LS301ithic	PDF

sot 26 Dual N-Channel MOSFET Abstract: 10mA JFET LS358 Text: LS358 LOG CONFORMANCE MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES ∆re ≤1Ω from ideal TYP. LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC C2 E1 5 B1 BOTH SIDES 500mW 4.3mW/°C	Original	LS358 250mW 500mW sot 26 Dual N-Channel MOSFET 10mA JFET	PDF
jfet differential transistor Abstract: JFET 401 U402 N CHANNEL FET Text: LS318 LOG CONFORMANCE MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES ∆re =1Ω TYP. LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC Maximum Temperatures Storage Temperature Range Operating Junction Temperature	Original	LS318 250mW 500mW LS318 jfet differential transistor JFET 401 U402 N CHANNEL FET	PDF
J201 Replacement Abstract: 2N5019 "direct replacement" Text: IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current Maximum Power Dissipation	Original	IT124 IT124 250mW 500mW J201 Replacement 2N5019 "direct replacement"	PDF
Current Regulator Diode Abstract: J110 spice J502 "Dual npn Transistor" "Dual PNP Transistor" VCR11N J201 spice Dual PNP Transistor U402 N CHANNEL FET jfet differential transistor Text: LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES HIGH GAIN hFE ≥ 200 @ 10µA - 1mA TIGHT VBE MATCHING \|VBE1-VBE2\| = 0.2mV TYP. HIGH fT 275MHz TYP. @ 1mA C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted	Original	LS350 LS351 LS352 275MHz 250mW 500mW LS352 Current Regulator Diode J110 spice J502 "Dual npn Transistor" "Dual PNP Transistor" VCR11N J201 spice Dual PNP Transistor U402 N CHANNEL FET jfet differential transistor	PDF
Untitled Abstract: No abstract text available Text: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 200 @ 10µA-1mA VERY HIGH GAIN TIGHT VBE MATCHING \|VBE1-VBE2\| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA C1 E1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted	Original	LS310 LS311 LS312 LS313 250MHz 250mW 500mW	PDF
Untitled Abstract: No abstract text available Text: IT120A IT120 IT121 IT122 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT120 Series Pin for Pin Compatible C1 ABSOLUTE MAXIMUM RATINGS NOTE 1 E1 C2 TA= 25°C unless otherwise noted IC Collector Current	Original	IT120A IT120 IT121 IT122 250mW 500mW	PDF
J201 spice Abstract: dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310 Text: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated	Original	LS3250 OT-23 J201 spice dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310	PDF
E421 fet Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet Text: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.	OCR Scan	O-72P* O-92X O-105 O-106 O-106P E421 fet equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet	PDF
Dual pnp Dual npn Transistor Abstract: n-channel JFET sot23-6 surface mount pico-amp diode dual P-Channel JFET sot23 A1 sot23 n-channel dual Channel JFET sot23 "Dual npn Transistor" LS841 SOIC J110 spice A6 SOT-23 MOSFET P-CHANNEL Text: LS3550 SERIES MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated	Original	LS3550 OT-23 Dual pnp Dual npn Transistor n-channel JFET sot23-6 surface mount pico-amp diode dual P-Channel JFET sot23 A1 sot23 n-channel dual Channel JFET sot23 "Dual npn Transistor" LS841 SOIC J110 spice A6 SOT-23 MOSFET P-CHANNEL	PDF
high speed Zener Diode Abstract: "Dual PNP Transistor" PAD1 Spice a7 P-CHANNEL LS320 j177 TRANSISTOR "Dual npn Transistor" LS3250 2n5019 ultra low noise Text: NC G2 G1 NC NC G2 G1 NC Linear Integrated Systems - Lead Pb Free / RoHS Compliant Parts List MAIN MENU Home Page Page 1 of 3 Linear Integrated Systems Lead-Free / RoHS Fact Sheet Products Support Literature Spice Models Downloads Contact Us Distributors	Original		PDF

2N3954 TRANSISTOR Search Results

2N3954 TRANSISTOR Result Highlights (5)

2N3954 TRANSISTOR Datasheets Context Search

Untitled

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2N3954

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TRANSISTOR 2n3955

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2N3954

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J555

NPD8301

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2N5561

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sot 26 Dual N-Channel MOSFET

jfet differential transistor

J201 Replacement

Current Regulator Diode

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J201 spice

E421 fet

Dual pnp Dual npn Transistor

high speed Zener Diode