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2N4950 Datasheets (14)

Part	Manufacturer	Description	Datasheet Type	PDF
2N4950	Diode Transistor	Transistor Short Form Data	Scan	PDF
2N4950	General Diode	Transistor Selection Guide	Scan	PDF
2N4950	General Transistor	NPN Power Transistors	Scan	PDF
2N4950	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N4950	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N4950	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N4950	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N4950	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N4950	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N4950	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N4950	New England Semiconductor	NPN TO-53 / TO-114 Transistor	Scan	PDF
2N4950	New England Semiconductor	NPN Transistors, TO-63 / TO-114	Scan	PDF
2N4950	Silicon Transistor	Low Frequency Silicon Power Transistor	Scan	PDF
2N4950	Solitron Devices		Scan	PDF

2N4950 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2n4889 Abstract: 2N4858 TEXAS 2N4418 2sa777 2n4891 2N4917 2SA8150 6ae diode 2N4417 2N6556 Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M	Original		PDF
2N4858 TEXAS Abstract: 2N4872 SIEMENS 5SN 2N4433 Qualidyne 2N4418 transtek 40391 RCA 2N4417 api 560 Text: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt	Original	O-126 O-126var 2S8549 2S8527 2S8528 2S81217 KSA931 2N3468 2S8733 2N4858 TEXAS 2N4872 SIEMENS 5SN 2N4433 Qualidyne 2N4418 transtek 40391 RCA 2N4417 api 560	PDF
API 160 Abstract: 2N4418 2N4889 transtek ha7723 2N4906 MOTOROLA 2N4881 Siliconix 2n4881 2N4947 2SA1370E Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 < 40 45 50 2SA916K 2N4930 2N4931 2N4931S 2N4931S BF723 BF870S TBF870 2N3743 BF721 BF872S TBF872 MRF5211 MRF5211l HA7520 HA7520 HA7521 HA7521 MM4008 -ecY77VIT 55 60 65 70 75 80 BCY77VII BCY77VIII	Original	BF470S BF472 BF472S HA7725 HA7734 HA7737 HA7723 API 160 2N4418 2N4889 transtek 2N4906 MOTOROLA 2N4881 Siliconix 2n4881 2N4947 2SA1370E	PDF
2N4211 Abstract: 2N1514 2N2753 2n3054 2N2338 2N2580 2N5928 2N3472 2N2227 2N2228 Text: Table 1 A B C D E F G H I 1 163-04 1748-0630 1768-0610 2N1015 2N2015 2N2739 2N3743 2N4002 2N6046 2 163-06 1748-0810 1768-0620 2N1015A 2N2016 2N2740 2N3771 2N4003 2N6047 3 163-08 1748-0820 1768-0630 2N1015B 2N2109 2N2741 2N3772 2N4210 2N6048 4 163-10 1748-0830 1768-0810 2N1015C 2N2110	Original	2N1015 2N2015 2N2739 2N3743 2N4002 2N6046 2N1015A 2N2016 2N2740 2N3771 2N4211 2N1514 2N2753 2n3054 2N2338 2N2580 2N5928 2N3472 2N2227 2N2228	PDF
2N1479 Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786 Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863	OCR Scan	O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786	PDF
2N558B Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002 Text: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors TypNo. VCEO (•!) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265	OCR Scan	0-300V 2N1936 2N1937 2N3265 2N3266 2N5250 2N5251 2N5489 2N5587 2N558B 2N558B 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002	PDF
2N5251 Abstract: 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114 Text: NEU ENGLAND SEMICON DUC TOR bSbM'îSB 0 0 0 0 0 5 7 5RE T> 14 3 • Ic max = 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fi = 0 .6 to 3 0 MHz IMPN TO-B3 Case 807 ' tc (MAX) (A) hFE @ IC/VCE (min-max @ A/V) 2N1936 2N1937 2N3265 2N3266 60 80 90 60 20 20 20 20	OCR Scan	000g05 2N1936 2N1937 2N3265 2N3266 1o05w1o 2n5250 2n5251 2n5489 2n5587 2N5251 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114	PDF
2n2301 Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815 Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö \| 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74	OCR Scan	2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815	PDF
2N4950 Abstract: Solitron Transistor Text: SOLITRON DEVICES INC bl DE \|fl3bflbD5 0001307 0 \| ~}7 0 T - 9 3 - S' ENGINEERING DEVICE SPECIFICATION (Transistor • 1.0 SECTION I: 1.1 Construction: 2 W\'j50 SILICON DEVICE DESCRIPTION This device is an NPN Diffused Planar Power Transistor (86d) packaged in a double-ended stud-mounted case (HAH).	OCR Scan	DGD13DÖ 2N4950 Solitron Transistor	PDF
2NXXXX Abstract: SILICON TRANSISTOR CORP 2N3920 2N4211 2N4866 2N3740 2N3741 2N3744 2N3861 2N3746 Text: I □ 1 ru X 0 CD Q . 2 E o o o o o lo io lo o o CM CM ru cQ o o o o o CO CO CO CO CO O O O LO lo CO LO evi CM O O O O O T“ T T“ T“ C\Ì Z Z Z Z Z CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz Z Z Z Z Z	OCR Scan	fl2S40a2 2N3740 2N3741 2N3744 O-111 2N3745 2N3746 2N3747 2NXXXX SILICON TRANSISTOR CORP 2N3920 2N4211 2N4866 2N3861	PDF
Untitled Abstract: No abstract text available Text: Z CL CL CL CL C L Z Z Z Z Z CL CL CL CL CL CL CL CL CL Z Z Z Z Z Q- CL CL CL CL z zzzz Q- CL CL CL CL 2N4910 2N4911 2N4912 2N4913 2N4914 CL CL CL CL CL Z Z Z Z Z CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz o o o o o c l cl o dd z zz z ‘	OCR Scan	O-39/TO-5 2N4910 2N4911 2N4912 2N4913 2N4914 O-114 O-111	PDF
4010 IC Abstract: 2N6062 2N5927 ic 4010 2N4866 50110 TO-114 2N1936 2N1937 2N3266 Text: NEU ENGLAND SEMICONDU CTOR b S b M ' m D000GS7 m 3 SRE D «NES Ic max — 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fT = 0.6 to 3 0 MHz NPN TÜ-63 Case 807 V ce (sat ) @ IC/lB ( V @ A/A) VBE (SAT) @ IC/lB (V @A/A) VBE @ IC/VCE (V @ A/V) pd @ TC = 100 °C (Watts)	OCR Scan	0000G57 2N1936 2N1937 2N3265 102CV2 2N3266 602W2 2N4950 2N5250 507QT7 4010 IC 2N6062 2N5927 ic 4010 2N4866 50110 TO-114 2N1936 2N1937 2N3266	PDF
MC2259 Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214 Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the	OCR Scan		PDF
RCA SK CROSS-REFERENCE Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1 Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered	OCR Scan		PDF

y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
Untitled Abstract: No abstract text available Text: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) * NPN Power Transistors (A) hFE&C/VCE (mln-mu A/V) VCE(SAT) ©IC/IB (V0A/A) VBE ©IC/VCE (V© A/V) VBE(SAT) ©OB (V A/V) 60 80 90 60 20 20 20 20 10-50 @10/10 10-50 @10/10 25-55 @15/2	OCR Scan	2N3848 2N3S49 2N4002 2N4003 2N4210 2N4211 2N5539	PDF
2N5339 Diode Abstract: 40327 FR 302 Diode 2N4866 2N1479 2N1480 2N1481 2N1482 2N1700 2N5781 Text: s g g g g g g g g 0 0 0 0 0 0 cncncncncncncncnroro A cn 0 Ö 0 0 Ö 0 0 Ö 0 Ö Ö Ö c o c o r o r o c o c o c o c o m m - * —i- — ^ C O C O C O —i- —i- — 0 cn cn b i c n c n c n b i c n o c n c n c n c n ö ö ö o o o o o 03 COO?COq?COJk.r.->\|COI'O.U	OCR Scan	O-39/TO-5 TfiM515T0nrQ 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5786 2N5339 Diode 40327 FR 302 Diode 2N4866 2N5781	PDF
5N520 Abstract: 5n52 2N3268 2N1938 2n60n 2N3265 5n5202 606J 2N4866 2N6278 Text: GENERAL TRANSISTOR CORP EME D • 3120001 000Q070 3 ■ 1^3 3 ^ 0 / General Transistor Corporation CASE 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 lc<MAX) = 2 0 to 6 0 A VcEO(SUS) a 4 Û-3 0 0 V	OCR Scan	0-300V 2N1938 2N1937 2N3265 2N6260 2N6261 2N6315 2N6317 2N6316 2N6318 5N520 5n52 2N3268 2N1938 2n60n 2N3265 5n5202 606J 2N4866 2N6278	PDF
ALY TRANSISTOR Abstract: 40349 40327 ka025 20100 2N4866 BFE 75A transistor 160v 1.5a pnp transistor ALY 2N1479 Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863	OCR Scan	O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 ALY TRANSISTOR 40349 40327 ka025 20100 2N4866 BFE 75A transistor 160v 1.5a pnp transistor ALY	PDF

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2N4950 Search Results

2N4950 Price and Stock

Kyocera AVX Components VOID02N4950ANTR

2N4950 Datasheets (14)

2N4950 Datasheets Context Search

2n4889

2N4858 TEXAS

API 160

2N4211

2N1479

2N558B

2N5251

2n2301

2N4950

2NXXXX

Untitled

4010 IC

MC2259

RCA SK CROSS-REFERENCE

y51 h 120c

Untitled

2N5339 Diode

5N520

ALY TRANSISTOR