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    2N5087 EQUIVALENT Search Results

    2N5087 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FM82DUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D Visit Toshiba Electronic Devices & Storage Corporation

    2N5087 EQUIVALENT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MMBT5087

    Abstract: BF254
    Text: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.


    Original     		2N5086 MMBT5086 2N5087 MMBT5087 2N5087 OT-23 MMBT5087 BF254 PDF

    SOT-23 MARK 2Q

    Abstract: BF254 sot-23 transistor p2 marking
    Text: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.


    Original     		2N5086 MMBT5086 2N5087 MMBT5087 2N5087 OT-23 2N5087BU SOT-23 MARK 2Q BF254 sot-23 transistor p2 marking PDF

    2N5086

    Abstract: 2N5087 CBVK741B019 F63TNR MMBT5086 MMBT5087 PN2222N
    Text: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.


    Original     		2N5086 MMBT5086 2N5087 MMBT5087 2N5086 2N5087 MMBT5086 OT-23 CBVK741B019 F63TNR MMBT5087 PN2222N PDF

    SOT-23 MARK 2Q

    Abstract: BEL 167 transistor transistor k 2541 2N5086 2N5087 CBVK741B019 F63TNR MMBT5086 MMBT5087 PN2222N
    Text: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.


    Original     		2N5086 MMBT5086 2N5087 MMBT5087 2N5086 2N5087 MMBT5086 OT-23 SOT-23 MARK 2Q BEL 167 transistor transistor k 2541 CBVK741B019 F63TNR MMBT5087 PN2222N PDF

    2N5087 equivalent

    Abstract: 2N5086 2N5087 MMBT5086 MMBT5087 2N5087 NATIONAL SEMICONDUCTOR 2NS087
    Text: 2N5086 / MMBT5086 1 2N5087 I MMBT5087 Discrete POWER & Sign al Technologies National f i Semiconductor" MMBT5086 MMBT5087 2N5086 2N5087 SOT-23 Mark: 2P/2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose am plifier applications at collector currents to 50 mA.


    OCR Scan     		2N5086 MMBT5086 2N5087 MMBT5087 2N5087 OT-23 LS01130 2N5087 equivalent MMBT5087 2N5087 NATIONAL SEMICONDUCTOR 2NS087 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor 2N5087 PNP Silicon COLLECTOR 3 Motorola Preferred Device 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage VCBO 50


    Original     		2N5087 226AA) PDF

    2N5087 equivalent

    Abstract: 2N5087 fairchild 741 2N5086 MMBT5086 MMBT5087 2n5087 fairchild
    Text: 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 B SOT-23 E Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA. Sourced from Process 62.


    Original     		2N5086 2N5087 MMBT5086 MMBT5087 OT-23 2N5087 equivalent 2N5087 fairchild 741 2N5086 MMBT5086 MMBT5087 2n5087 fairchild PDF

    2n5087

    Abstract: 2N5086 BT5086 2N5087 equivalent
    Text: S E M IC O N D U C T O R tm 2N5086 2N5087 MMBT5086 MMBT5087 SOT-23 Mark: 2P/2Q PNP General Purpose Amplifier T his device is designed for low level, high gain, low noise general purpose am p lifier a p p lica tio ns at co lle cto r currents to 50 mA. Sourced from Process 62.


    OCR Scan     		2N5086 MMBT5086 2N5087 MMBT5087 2N5087 OT-23 BT5086 2N5087 equivalent PDF

    2NS087

    Abstract: 2N5087 NATIONAL SEMICONDUCTOR 2NS086 2N5086 2N5087 MMBT5086 MMBT5087 T092 0013581
    Text: 2N5086 / MMBT508612N50871 MMBT5087 Discrete POWER & Sign al Technologies _ Na tional Semiconductor~ 2N5086 2N5087 MMBT5086 MMBT5087 PNP General Purpose Amplifier T h is d evice is d esigned fo r low level, high gain, low noise general p u rp o s e a m p lifie r a p p lic a tio n s a t c o lle c to r c u rre n ts to 50 mA.


    OCR Scan     		2N5086 2N5087 MMBT5086 MMBT5087 OT-23 b501130 bSD113D 2NS087 2N5087 NATIONAL SEMICONDUCTOR 2NS086 2N5087 MMBT5087 T092 0013581 PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP General Purpose Amplifier 3 • This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA. 2 SOT-23 1 Mark: 2Q TO-92 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector


    Original     		OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP General Purpose Amplifier 3 • This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA. 2 SOT-23 1 Mark: 2Q TO-92 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector


    Original     		2N5086/2N5087/MMBT5087 OT-23 2N5087 O-92-3 2N5087BU 2N5087TA 2N5087TAR 2N5087TF 2N5087TFR PDF

    2N5087 equivalent

    Abstract: transistor 2N5086 2N5086 2N5087 MMBT5087
    Text: PNP General Purpose Amplifier 3 • This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA. 2 SOT-23 1 Mark: 2Q TO-92 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector


    Original     		OT-23 2N5087 equivalent transistor 2N5086 2N5086 2N5087 MMBT5087 PDF

    2N5086

    Abstract: 2N5087 MMBT5087
    Text: PNP General Purpose Amplifier 3 • This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA. 2 SOT-23 1 Mark: 2Q TO-92 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector


    Original     		OT-23 2N5086 2N5087 MMBT5087 PDF

    sot-23-4

    Abstract: No abstract text available
    Text: PNP General Purpose Amplifier 3 • This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA. 2 SOT-23 1 Mark: 2Q TO-92 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector


    Original     		2N5086/2N5087/MMBT5087 OT-23 2N5086 O-92-3 2N5086BU 2N5086TA 2N5086TAR 2N5086TF 2N5086TFR sot-23-4 PDF

    1N4937 SMD

    Abstract: diode 1n4007 melf smd 2n5401 smd 1n4001 melf diode 1n4007 melf 2n2222a SOT223 1N4148 SOD-80 2n2222a SOT23 1N5819 SOD80 2N2369 SOT-23
    Text: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 CMPD 914 CLL914 CMPD28:i6 CMPD28IÌ8 CMPD7000 BAS28 SOT-23 SOD-80 SOT-23 SOT-23 SOT-23 SOT-143 Single Switching Diode Leadless Switching Diode Dual, Common Anode Dual, Common Cathode Dual, In Series


    OCR Scan     		CLL914 CMPD28 CMPD28I CMPD7000 BAS28 CMPD4448 CLL4448 CMPD41 CLL4150 BAS56 1N4937 SMD diode 1n4007 melf smd 2n5401 smd 1n4001 melf diode 1n4007 melf 2n2222a SOT223 1N4148 SOD-80 2n2222a SOT23 1N5819 SOD80 2N2369 SOT-23 PDF

    1N4007 diode SOD 80

    Abstract: 1N4148 SMA 2n2222a SOT23 smd 2n3055 2N2369 SOT-23 2n3904 smd 2n3055 SOT-23 TIP41 SOT23 2N6520 sot23 SMD DIODE 1N4006
    Text: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 BAS28 CLL914 CMPD 914 CMPD2836 CMPD2838 CMPD7000 SOT-143 SOD-80 SOT-23 SOT-23 SOT-23 SOT-23 Dual, Isolated Leadless Switching Diode Single Switching Diode Dual, Common Anode Dual, Common Cathode


    OCR Scan     		BAS28 CLL914 CMPD2836 CMPD2838 CMPD7000 CLL4448 CMPD4448 BAS56 CLL4150 CMPD4150 1N4007 diode SOD 80 1N4148 SMA 2n2222a SOT23 smd 2n3055 2N2369 SOT-23 2n3904 smd 2n3055 SOT-23 TIP41 SOT23 2N6520 sot23 SMD DIODE 1N4006 PDF

    BC107 equivalent transistors

    Abstract: 2n5401 equivalent BC557 equivalent 2N2907 equivalent 2n2905 replacement bc327 equivalent bc237 equivalent MPSa06 equivalent equivalent for BC337 bc327 replacement
    Text: Philips Semiconductors Small-signal Transistors DISCONTINUED TYPE Replacement list REASON FOR DELETION REMARKS 2N1613 Discontinued 2N1711 Discontinued 2N1893 Discontinued 2N2219 Discontinued 2N2219A Discontinued 2N2222/A Discontinued 2N2369/A Discontinued


    Original     		2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222/A 2N2369/A 2N2484 2N2905 2N2905A BC107 equivalent transistors 2n5401 equivalent BC557 equivalent 2N2907 equivalent 2n2905 replacement bc327 equivalent bc237 equivalent MPSa06 equivalent equivalent for BC337 bc327 replacement PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    MOTOROLA 2N5179

    Abstract: motorola 2N2219 motorola 2N2222A motorola mpq3904 MOTOROLA 2N2905A MJ3001 equivalent motorola 2N4427 motorola 2N2219A 2N3819 MOTOROLA motorola 2N3866
    Text: Central Semiconductor - Cross Reference Competitor Discontinued Part Replacements EOL Part # Manufacturer Name Central Semi Part # A12FR10 International Rectifier CR20-010R A12FR100 International Rectifier CR20-100R A12FR120 International Rectifier CR20-120R


    Original     		A12FR10 CR20-010R A12FR100 CR20-100R A12FR120 CR20-120R A12FR20 CR20-020R A12FR40 CR20-040R MOTOROLA 2N5179 motorola 2N2219 motorola 2N2222A motorola mpq3904 MOTOROLA 2N2905A MJ3001 equivalent motorola 2N4427 motorola 2N2219A 2N3819 MOTOROLA motorola 2N3866 PDF

    2n1613 equivalent

    Abstract: BC237 diode l 0607
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection


    Original     		SC-70/SOT-323 BAV99WT1 BAV99LT1. BAV99RWT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2n1613 equivalent BC237 diode l 0607 PDF

    Acam PS021

    Abstract: R1SG sinc3filter Full-bridge LcC resonant converter IC51-0484-806 OIML-R76 74HC1G14 PS021 QFN48 QFP48
    Text: PSØ21 1.1 System Overvi ew 1 Digital Amplifier for Strain Gages PSØ21 Datasheet 02 J UNE 2006 ND acam - solutions in time Precision Time Interval Measurement acam-messelectronic gmbh - Am Hasenbiel 27 - D-76297 Stutensee-Blankenloch - Germany - www.acam.de


    Original     		D-76297 b-095-107-19-62 Acam PS021 R1SG sinc3filter Full-bridge LcC resonant converter IC51-0484-806 OIML-R76 74HC1G14 PS021 QFN48 QFP48 PDF

    equivalent transistor of F2B transistor

    Abstract: 2N6429 equivalent "FM receiver" 10J 6K ceramic MS25036-157 power inverter schematic diagram CA41 CA411 MD500 2n6429
    Text: NEUBRIDGE MICROSYSTEMS ESE D • bSññlQl OOOOTOG O ■ CA408/CA411 C fíL FM RECEIVER CHIP SET FOR DATA T -7 5 -9 0 • Wide supply voltage range 1.8 - 6.0 volts • Single cell operation down to 0.9 volts using external Inverter and on-chlp regulator circuitry


    OCR Scan     		CA408/CA411 200MHz InterfacC17 180pF 294SN-A057HM) 10jiF OK02945N-0199AQ) INDIANAGENF867-1-06) IN5817) equivalent transistor of F2B transistor 2N6429 equivalent "FM receiver" 10J 6K ceramic MS25036-157 power inverter schematic diagram CA41 CA411 MD500 2n6429 PDF

    2N6429 equivalent

    Abstract: equivalent transistor of F2B transistor CA411 2n6429
    Text: CfìL CA408/CA411 FM RECEIVER CHIP SET FOR DATA The CA408/CA411 chip set is a low power radio receiver for FM data transmission systems. Receiver simplicity and cost efficiency are achieved by using a direct conversion technique that converts VHF directly to audio.


    OCR Scan     		CA408/CA411 200MHz 294SN-A057HM) 100pF 30jiH Coilcraftssl63-12) 10jiF Coilcraftssl65-24) 2N6429 equivalent equivalent transistor of F2B transistor CA411 2n6429 PDF

    BC309 equivalent

    Abstract: st 393 8-pin T0-226AE
    Text: MOTOROLA SC XSTRS/R F MbE D • b3b?2S4 Oa'Obll b ■MOTb SMALL-SIGNAL BIPOLAR TRANSISTORS — PLASTIC-ENCAPSULATED TRANSISTORS (continued) 7 ^ jZ 7 - Cs5 Table 1. Plastic-Encapsulated General-Purpose Transistors (continued) Case 29-03 — T0-226AE (1-WATT T0-92)


    OCR Scan     		T0-226AE T0-92) BDC01D BC309 equivalent st 393 8-pin T0-226AE PDF