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    2N6032 TRANSISTOR Search Results

    2N6032 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    2N6032 TRANSISTOR Price and Stock

    Microchip Technology Inc 2N6032

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    2N6032 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6032

    Abstract: 2N6033 adc datasheets 2000C 2N6032 Transistor
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/528 Devices Qualified Level 2N6032 JANTX JANTXV 2N6033 MAXIMUM RATINGS Ratings Symbol 2N6032 2N6033 Units Collector-Emitter Voltage Collector-Base Voltage Collector Current Emitter-Base Voltage


    Original     		PDF MIL-PRF-19500/528 2N6032 2N6033 O-204AA) 2000C 2N6032 2N6033 adc datasheets 2000C 2N6032 Transistor

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 528 Devices Qualified Level 2N6032 JANTX JANTXV 2N6033 MAXIMUM RATINGS Ratings Symbol 2N6032 2N6033 Units Collector-Emitter Voltage Collector-Base Voltage Collector Current Emitter-Base Voltage


    Original     		PDF MIL-PRF-19500/ 2N6032 2N6033 O-204AA) 2000C

    2N6032

    Abstract: 2N6033 all ic data all ic datasheet
    Text: TECHNICAL DATA 2N6032 JANTX, JTXV 2N6033 JANTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/528 NPN POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector Current Emitter-Base Voltage Base Current


    Original     		PDF 2N6032 2N6033 MIL-PRF-19500/528 2N6032 2N6033 all ic data all ic datasheet

    2N6033

    Abstract: No abstract text available
    Text: TECHNICAL DATA 2N6032 JANTX, JTXV 2N6033 JANTX, JTXV Processed per MIL-PRF-19500/528 NPN POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector Current Emitter-Base Voltage Base Current Total Power Dissipation @ TC = 250C 1


    Original     		PDF 2N6032 2N6033 MIL-PRF-19500/528 2N6032 2N6033 O-204AA)

    Untitled

    Abstract: No abstract text available
    Text: 2N6032+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)90 V(BR)CBO (V)120 I(C) Max. (A)50 Absolute Max. Power Diss. (W)80# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)12m¶ @V(CBO) (V) (Test Condition)110 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)50


    Original     		PDF 2N6032 Freq50M

    Untitled

    Abstract: No abstract text available
    Text: 2N6032+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)90 V(BR)CBO (V)120 I(C) Max. (A)50 Absolute Max. Power Diss. (W)80# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)12m¶ @V(CBO) (V) (Test Condition)110 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)50


    Original     		PDF 2N6032 Freq50M

    Untitled

    Abstract: No abstract text available
    Text: 2N6032+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)90 V(BR)CBO (V)120 I(C) Max. (A)50 Absolute Max. Power Diss. (W)80# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)12m¶ @V(CBO) (V) (Test Condition)110 V(CE)sat Max. (V)1.3 @I(C) (A) (Test Condition)50


    Original     		PDF 2N6032 Freq50M

    2N6033

    Abstract: 2N6032 2N6032 Transistor
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 March 2009. INCH-POUND MIL-PRF-19500/528B 18 December 2008 SUPERSEDING MIL-PRF-19500/528A 23 July 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN,


    Original     		PDF MIL-PRF-19500/528B MIL-PRF-19500/528A 2N6032 2N6033, MIL-PRF-19500. 2N6033 2N6032 Transistor

    2N6033

    Abstract: JANTX 2222 2N6032 MIL-PRF19500 RS 3041 C 2N6033 JANTX qml-19500
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 October 1999. INCH-POUND MIL-PRF-19500/528A 23 July 1999 SUPERSEDING MIL-S-19500/528 USAF 16 September 1977 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN,


    Original     		PDF MIL-PRF-19500/528A MIL-S-19500/528 2N6032 2N6033 MIL-PRF-19500. 2N6033 JANTX 2222 MIL-PRF19500 RS 3041 C 2N6033 JANTX qml-19500

    RCP701C

    Abstract: RCP700C 12T10T RCP702B RCP701A
    Text: Power Transistor High-Speed-Switching n-p-n and p-n-p Type Selection Charts cont'd ICBO - M A FE v CEO (sus) V V CEX (sus) V 'c V V <sat)-V CE Temp.—°C V CB mA V 25 V 15 15 2 2 12t 10t 100 135 mA 'B mA 15 15 1.2 1.2 5671 FAMILY (n-p-n) High Current, Hi


    Original     		PDF 2N5671* 2N5672 2N6033 2N6032 2N6033* 2N6479* 2N6480* 2N6481* O-202AB RCP705 RCP701C RCP700C 12T10T RCP702B RCP701A

    23487

    Abstract: 2N60G3 23472
    Text: Microsemi NPN Transistors Part Number 2N5039 JAN2N5039 JANS2N5039 JANTX2N5039 JANTXV2N5039 2N5038 2N5330 JAN2N5038 JANS2N5038 JANTX2N5038 JANTXV2N5038 2N5672 2N6033 2N6032 2N5758 2N5759 2N5760 2N6671 2N6672 2N6673 2N6835 2N5877 2N5878 2N5632 2N5633 2N5634


    OCR Scan     		PDF STD60 NPN-19 23487 2N60G3 23472

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE NPN TO-3 * Tc = 25°C ’ Typical 6 DEVICE TYPE 2N6032 2N6033 2N6274 2N6275 2N6276 2N6277 2N6322 2N6323 2N6326 2N6327 2N6338 2N6340 2N6341 2N6354 2N6510 2N6511 2N6512 2N6677 2N6678 2N6686 2N6687


    OCR Scan     		PDF 2N6032 2N6033 2N6274 2N6275 2N6276 2N6277 2N6322 2N6323 2N6326 2N6327

    TA7337

    Abstract: transistor et 454 TRANSISTOR BJ 131 TA7337A 2N6033 2N6033 RCA tektronix 454 2N6032 equivalent 2N6032 TA733
    Text: 2N6032, 2N6033 File Number 462 High-Current, High-Speed High-Power Transistors T E R M I N A L D E S IG N A T IO N S c Silicon N-P-N Types for High-Speed Switching and Linear-Amplifier Applications In Military, Industrial and Commercial Equipment Futur««:


    OCR Scan     		PDF 2N6032, 2N6033 DD17134 2N6033) 2N6032) TQ-204AE RCA-2N6032 2N6033* 2N6033 2N6032; TA7337 transistor et 454 TRANSISTOR BJ 131 TA7337A 2N6033 RCA tektronix 454 2N6032 equivalent 2N6032 TA733

    TA7337

    Abstract: 7337A 2N6033
    Text: Power Transistors File Number 462 HARR IS S E M I C O N D SE CT OR 2N6032, 2N6033 5 7 E T> 4 3 G 2271 G G m i l 1 WÊ HAS T=.3B-1“5 High-Current, High-Speed High-Power Transistors T E R M IN A L D E S IG N A T IO N S Silicon N -P -N T yp e s fo r H ig h -S p e e d S w itc h in g and


    OCR Scan     		PDF 2N6032, 2N6033 2N6033) 2N6032) 2N6032 2N6033* P60I9 TA7337 7337A 2N6033

    Untitled

    Abstract: No abstract text available
    Text: 27E D IUCROSEMI CÔRP/POüJER • bllS^SQ G0GG5ai 1 ■ PTC T'33~0l W> a <u a Microsemi Company Transistor Experts Since 1974 Power Technology Com ponents, e o a E Power Transistors Now Available FromP.T.C. : U tè JO 'S c ■8 £u % Ck Device Type Polarity


    OCR Scan     		PDF 2N3739 2N656 2N3740 2N656A 2N3741 2N1047 2N3749 2N1047A 2N3766 2N1048A

    2n5872

    Abstract: No abstract text available
    Text: •4ö E Ö1331Ö7 » 0D0GM41 SEMELABE ISNLB M^b SEMELAB L T T>r-zr-ei BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rei Code 2N5741 2N5742 2N5743 2N5744 2N5745 2N5781 2N5782 2N5783 2N5784 2N5785 2N5786 2N5793 2N5794 2N5804 2N5805 2M5838 2N5839 2N5840


    OCR Scan     		PDF 0D0GM41 2N5741 2N5742 2N5743 2N5744 2N5745 2N5781 2N5782 2N5783 2N5784 2n5872

    2N3902

    Abstract: 2N4347 2N5157 2N5239 2N5240 2N5466 2N5467 2N5685 2N5686 2N6511
    Text: SEM ICO NDU CT OR TECHNOLOGY OSE D | fll3b4Sñ □□□□S53 E | ~ 7“<- 3 3 - o / SEM ICONDUCTOR TECHNOLOGY, INC. ~ o.13l S r^ J,ay o ! ! Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTO RS


    OCR Scan     		PDF A13L45B o413LS^ 2N3902 2N4347 2N5157 2N5239 2N5240 2N5466 2N5467 2N5685 2N5686 2N6511

    2N5940

    Abstract: 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030 2N5733 2N5734 2N5738
    Text: 8254022 S IL IC O N TRANS IS T O R CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued "flö Ô8D 0 0 7 9 6 . DE | f l a S 4 D E S DDDOTTt. 3 ,D . . T - |~~ lc Max Amps VCEO(SUS) Polarity 2N5733 2N5734 2N5737 2N5738 2N5739 NPN NPN PNP PNP


    OCR Scan     		PDF 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5940 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030

    2N3055

    Abstract: 2N3055H BDY25C bu103a 2n2243 transistor U3158 transistor BUX22 bu102 TRANSISTOR BSW68A Transistor BFX79
    Text: Illl iF ti mi Semelab Mil / Aerospace Division NATO LISTED TRANSISTO R PRO D UCT Semelab is listed and supplies transistors for use in NATO military systems. Semelab’s CAGE number is U3158. Below is a SELECTION from the 740 device types listed. NATO NUMBER


    OCR Scan     		PDF U3158. BUV22 BUV23 BUV26 BUV39 BUV47 BUV50 BUV51 BUV52 BUV61-CECC-QR 2N3055 2N3055H BDY25C bu103a 2n2243 transistor U3158 transistor BUX22 bu102 TRANSISTOR BSW68A Transistor BFX79

    40872

    Abstract: 40594 40636 300W TRANSISTOR AUDIO AMPLIFIER 2N2102 2N4036 2N5492 2N5495 2N6103 2N6111
    Text: POWER TRANSISTOR TYPES FOR AUD IO -FREQ U ENC Y Power Output 16Q 6 .5 16 4n 18 45 Output Transistors 8Ì2 Imped. Circuit P -N -P 40980 (2N 6111) True Comp. 40816 (2N 5495) (2N 6269) 40817 (2N 6111) - Comp. Darlington BDX 33 2N6386 BDX 34 TA8201 - True Comp.


    OCR Scan     		PDF 2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) 40872 40594 40636 300W TRANSISTOR AUDIO AMPLIFIER 2N2102 2N4036 2N5492 2N5495 2N6103 2N6111

    DTS423

    Abstract: DTS-425 DTS410 DTS413 2N6575 DTS-411 DTS425 DTS-413 transistor 2N6274 DTS-430
    Text: ÖM DIODE TRANSISTOR CO INC NPN TO-aiconid Typ«* PHP Comp a- Vcew sus men VolU) & hFE @IC/VCE (Min-Max @A/V> DE |SÖ4fl35E ODOOia4 3 " IS/b Ice» pd ®Vce ®VCE T c- 2 9 °c T = 1*ao (mA @ V) (Watts) (A ® ») VCEfSAT) ®IC/lB (¥ ® A/A) »BE o ic /vce


    OCR Scan     		PDF Sfi4fl35E T-33-15 Tc-29Â 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 DTS423 DTS-425 DTS410 DTS413 2N6575 DTS-411 DTS425 DTS-413 transistor 2N6274 DTS-430

    Untitled

    Abstract: No abstract text available
    Text: 8254022 SILICON TRANSISTOR CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5745 2N5758 2N5759 2N5760 2N5784 2N5785 2N5786 2N5804 2N5805 2N5838 2N5839 2N5840


    OCR Scan     		PDF 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744

    DTS-425

    Abstract: 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 2N5936 2N5937
    Text: ÖM DIODE TRANSISTOR CO INC NPN TO-aiconid Typ«* PHP Comp a- Vcew sus men VolU) & hFE @IC/VCE (Min-Max @A/V> DE |SÖ4fl35E ODOOia4 3 " IS/b Ice» pd ®Vce ®VCE T c- 2 9 °c T = 1*ao (mA @ V) (Watts) (A ® ») VCEfSAT) ®IC/lB (¥ ® A/A) »BE o ic /vce


    OCR Scan     		PDF Sfi4fl35E T-33-15 Tc-29Â 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 DTS-425 2N5936 2N5937

    RCA 40250

    Abstract: 8350a 8203B Transistors RCA 41013 40250 RCA 8203A rca 383 2N62* rca to3 2n3283 2N4037 RCA
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 250 MHz . . . I r to 60 A . . . P r to 140 W ic • 1 A HIM . P f ■ 5 W m ax. T O -3 9 * le * - 1 A MX. P j « 7 W m ax. (T O -» ) • 30 x 30* 30x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037 ic ■ 2 A m ax.


    OCR Scan     		PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 RCA 40250 8350a 8203B Transistors RCA 41013 40250 RCA 8203A rca 383 2N62* rca to3 2n3283 2N4037 RCA