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    Microchip Technology Inc 2N6232

    TRANS PNP 100V 10A TO5
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    2N6232 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6232 Microsemi NPN Transistor Original PDF
    2N6232 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=100 / Ic=10 / Hfe=40-250 / fT(Hz)=30M / Pwr(W)=15 Original PDF
    2N6232 API Electronics COLLECTOR CURRENT = 10 AMPS NPN TYPES Scan PDF
    2N6232 API Electronics Short form transistor data Short Form PDF
    2N6232 API Electronics Short form transistor data Short Form PDF
    2N6232 General Semiconductor Low Frequency Silicon Power NPN Transistor Scan PDF
    2N6232 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6232 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6232 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6232 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6232 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6232 PPC Products Transistor Short Form Data Scan PDF
    2N6232 Silicon Transistor Low Frequency Silicon Power Transistor Scan PDF
    2N6232-4 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2N6232 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SILICON NPN TRANSISTOR Devices 10 AMP 100 V 2N6232 • • FAST SWITCHING LOW SATURATION VOLTAGE MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Peak 1 Base Current – Continuous


    Original     		PDF 2N6232

    KT808AM

    Abstract: 2SD867Y KT808a BDX51 2N3076 kt808 7F54 2SC1343 2sd339 BD245C
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 55 60 65 70 >= -80 BDS12 SDT7473 2N4070 2N6232 SDT7140 SDT7140 SDT7140 SDT7B03 SDT7B03 SDT7B03 2SC3568L 2N5289 PT2986 2SC3568K 2N2227 2N3471 2N2231 2N3475 S2N5541-4 S2N5541-5 S2N5542-4


    Original     		PDF O-247 OT-186 O-111 T0-61 KT808AM 2SD867Y KT808a BDX51 2N3076 kt808 7F54 2SC1343 2sd339 BD245C

    Untitled

    Abstract: No abstract text available
    Text: 2N6232 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


    Original     		PDF 2N6232 O205AD) 17-Jul-02

    KT808AM

    Abstract: KT808a kt808 2N3426 2N3076 solitron 2N3455 siemens SID 3 2N3414 GE 2n3400 2N3432
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 55 60 65 70 >= -80 BDS12 SDT7473 2N4070 2N6232 SDT7140 SDT7140 SDT7140 SDT7B03 SDT7B03 SDT7B03 2SC3568L 2N5289 PT2986 2SC3568K 2N2227 2N3471 2N2231 2N3475 S2N5541-4 S2N5541-5 S2N5542-4


    Original     		PDF 2N3495S 2N3496 2N3497 2N3498 2N3499 2N3500 2N3501 2N3502 KT808AM KT808a kt808 2N3426 2N3076 solitron 2N3455 siemens SID 3 2N3414 GE 2n3400 2N3432

    2N6232

    Abstract: 10604
    Text: TECHNICAL DATA SILICON NPN TRANSISTOR Devices 10 AMP 100 V 2N6232 • • FAST SWITCHING LOW SATURATION VOLTAGE MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Peak 1 Base Current – Continuous


    Original     		PDF 2N6232 2N6232 10604

    2N6232

    Abstract: No abstract text available
    Text: 2N6232 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


    Original     		PDF 2N6232 O205AD) 1-Aug-02 2N6232

    Untitled

    Abstract: No abstract text available
    Text: 2N6232 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


    Original     		PDF 2N6232 O205AD) 19-Jun-02

    2N6232

    Abstract: No abstract text available
    Text: . General *7< 5^* Semiconductor Industries, Inc. 2N6232 SILICON NPN TRAN SISTO R S These double diffused, epitaxial collector devices are oxide passivated. They are designed for use in switching and many amplifier applications. The latest technologies are used to provide optimum performance and the highest degree of reliability.


    OCR Scan     		PDF 2N6232 300ps; 2N6232

    semelab 2N6287

    Abstract: 2N6279 2N6235 2N6277 2N6226
    Text: SEMELAB LTD 37E D type No. Reliability Option 2N6216 2N6226 2N6227 2N6228 2N6229 SCREEN SCREEN SCREEN SCREEN SCREEN NPN PNP PNP PNP PNP 2N6230 2N6232 2N6233 2N6234 2N6235 SCREEN SCREEN HI-REL HI-REL HI-REL PNP NPN NPN NPN NPN 2N6246 2N6247 2N6248 2N6249 2N6250


    OCR Scan     		PDF 000002b 2N6216 2N6226 2N6227 2N6228 2N6229 2N6230 2N6232 2N6233 2N6234 semelab 2N6287 2N6279 2N6235 2N6277

    TO111

    Abstract: TO61 U 114
    Text: G27 ELECTRONICS, INC. \ -15 COLLECTOR CURRENT = 10 AM PS NPN TYPES— ConWnued C ue VCBO Volt 2N3920 2N4070 2N4071 2M 150 JAN 2N4150 JT X • ÎN4150 2N4301 2N4347 2N4348 2N5006 T O -3 T O -3 T O -3 T O -5 T O -5 120 120 200 100 100 60 100 150 80 80 6 8


    OCR Scan     		PDF O-111 O-111 TO111 TO61 U 114

    2n60n

    Abstract: 2N6235 2N6078 2N5968 2N5970 2N6032 2N6033 2N6046 2N6215 2N6060
    Text: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRIEAKDOV VN SAT . VO LTA GES M ax. h F: E V OLTAGE S NPN 'c 'c CASE VCB V CE V EB V CE (V) (A) M in. Max. (A) !b (A) V CE (V) V BE (V) 2N5968 TO-63/I 100 100 10 10 10 30 120 10 1.5 1.2 2 2N5970 TO-3 80 80


    OCR Scan     		PDF 2N5968 O-63/I 2N5970 2N6032 2N6033 2N6046 2N6047 2N6060 2N6062 2n60n 2N6235 2N6078 2N6215

    2NXXXX

    Abstract: SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2N6192 2N6193 2N6211 2N6212 2nxxx 2N6214
    Text: □ D □ a î ru ru □ Q: îC\ o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O T- 1- CMCMCM Z Z Q -Z Z


    OCR Scan     		PDF 2N6192 2N6193 2N6211 2N6212 2N6213 2N6214 2N6215 2N6216 2N6217 2N6226 2NXXXX SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2nxxx

    2n3920

    Abstract: 2n8249
    Text: 0043592 A P I A P I _ 2 6 C ELECTRONICS INC 2b ELECTRONICS INC n— — D eT | O D ^ S 1^ a< 0000230 T | COLLECTOR CURRENT = 10 AMPS NPN TYPES - CONTINUED Device No 2N3920 2N4070 2N4071 2N4150 JAN 2N4150 JTX * 2N4150 2N4301 2N4347 2N4348 2N5006 2N5008


    OCR Scan     		PDF 2N3920 2N4070 2N4071 2N4150 2N4301 2N4347 2N4348 2N5006 2n8249

    2N3920

    Abstract: 2N4070 2N4071 2N4150 2N4301 2N4347 2N4348 2N5006 2N5008 2N5048
    Text: 0043592 A P I ELECTRONICS INC_ A P I ELECTRONICS INC 2^ 26f nn?*n n— DE | DDMBSTS 0000230 T | COLLECTOR CURRENT = 10 AMPS NPN TYPES - CONTINUED Device No 2N3920 2N4070 2N4071 2N4150 JAN 2N4150 JTX * 2N4150 2N4301 2N4347 2N4348 2N5006 2N5008 2N5048


    OCR Scan     		PDF 2N3920 2N4070 2N4071 2N4150 2N4150 2N4301 2N4347 2N5760 2N5854 2N4348 2N5006 2N5008 2N5048

    2N6220

    Abstract: 2N6256 2N6258 PNP 2N60 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051
    Text: 4ÖE J> m Ö1331Ö7 00DÜ442 322 SEMELAB SEMELAB LT D TW t> \ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 2N6052 2N6053 2N6054 2N6055 2N6056 2N6057 2N6058 2N6059 2N6077 2N6078 2N6079


    OCR Scan     		PDF 2N6033 2N6047 2N6049 2N6049E 2N6050 750-12k 2N6051 2N6052 2N6220 2N6256 2N6258 PNP 2N60

    Untitled

    Abstract: No abstract text available
    Text: i l * ! E L E C T R O N I C S , IN C.\-15 COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No Case VCBO Volts 2N3920 2N4070 2N4071 2N4150 JAN 2N41S0 JT X * 2N4150 2N4301 2N4347 2N4348 2N5006 TO-3 TO-3 TO -3 TO-5 TO-5 120 120 200 100 100 60 100 150


    OCR Scan     		PDF 2N3920 2N4070 2N4071 2N4150 2N41S0 2N4301 2N4347 2N4348 2N5006

    2N3920

    Abstract: 2N4070 2N4071 2N4150 2N4301 2N4347 2N4348 2N5006 2N5008 2N5048
    Text: i l * ! E L E C T R O N I C S , IN C.\-15 COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No Case VCBO Volts 2N3920 2N4070 2N4071 2N4150 JAN 2N41S0 JT X * 2N4150 2N4301 2N4347 2N4348 2N5006 TO-3 TO-3 TO -3 TO-5 TO-5 120 120 200 100 100 60 100 150


    OCR Scan     		PDF 2N3920 2N4070 2N4071 2N4150 2N41S0 2N4301 2N4347 2N4348 2N5006 2N5008 2N5048

    Untitled

    Abstract: No abstract text available
    Text: Micmsemi NPN Transistors Part Number NPN JANTXV2N3420 JANTXV2N3420S 2N3419 2N3419S 2N3421 2N3421S JAN2N3419 JAN2N3419S JAN2N3421 JAN2N3421S JANS2N3419 JANS2N3419S JANS2N3421 JANS2N3421S JANTX2N3419 JANTX2N3419S JANTX2N3421 JANTX2N3421S JANTXV2N3419 JANTXV2N3419S


    OCR Scan     		PDF NPN-10

    triacs bt 804 600v

    Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
    Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­


    OCR Scan     		PDF Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Untitled

    Abstract: No abstract text available
    Text: COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued v CEO sus V olts Device No C ase VcBO Volts 2N3920 2N4070 2N4071 2N4150 JAN 2N4150 JT X * 2N4150 2N4301 2N4347 2N4348 2N5006 TO -3 TO -3 TO -3 T O -5 TO -5 120 120 200 100 100 60 100 150 80 80 T O -5 100


    OCR Scan     		PDF O61/1 O111/1 111/I

    9300

    Abstract: 2N5561 2N5330 2N3729 2N4025 2n6561 9301
    Text: SEMICOA IflE D BVce0 Range lc Max. BVeb0 Range • ûlBMbia OGOG1SE M ■ Low Current HFE Mid-Range HFE High Current HFE To V @lc mA Min. @ lc mA Min. 4 6 0.1 30 10 40 300 40 4 6 0.1 20 2 20 140 20 40 3 6 .01 15 2 30 250 20 20 2 4,3 20 60 3 7 .10 20 2 30


    OCR Scan     		PDF 2N5004 2N5005 2N5008 2N5009 2N5038 2N5039 2N5077 2N5085 2N5149 2N5150 9300 2N5561 2N5330 2N3729 2N4025 2n6561 9301

    2n60n

    Abstract: 2N6063 2N6232 2N6274 2N5968 2N5970 2N6032 2N6033 2N6046 2N6047
    Text: Tl LU /N S IT > BRE V n NPN D E V IC E < • PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST S A T V O L T A G E S ( M i iX . E VCE , ÍY J _ 1.2 V BE (V) 'c (A) 10 30 120 10 (A j_ 1.5 4 1.5 20 100 1.5 1.25 2 3 7 2 50 10 50 50 5 1.3 2 120 8 2 40 10 50


    OCR Scan     		PDF 2N5968 O-63/I 2N5970 2N6032 2N6033 2N6046 2N6047 2N6048 2N6060 2N6062 2n60n 2N6063 2N6232 2N6274

    Untitled

    Abstract: No abstract text available
    Text: r le = 10 AMPS DEVICE TYPE VOLTS PD @ 100°C WATTS hFE@ lc Min. Max. AMPS PACKAGE 2N2811 2N2812 2N2813 2N2814 TO-61 TO-61 TO-61 TO-61 80 80 120 120 8.0 8.0 8.0 8.0 40.0 40.0 40.0 40.0 2040 20 40 - 60 120 60 120 2N4070 2N4071 2N4301 2N5218 2N5288 2N5289 100


    OCR Scan     		PDF 2N2811 2N2812 2N2813 2N2814 2N4070 2N4071 2N4301 2N5218 2N5288 2N5289