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    2N635 Search Results

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    2N635 Price and Stock

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    Microchip Technology Inc 2N6351

    TRANS NPN DARL 150V 5A TO-33
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    Microchip Technology Inc 2N6350

    TRANS NPN DARL 80V 5A TO-33
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    Microchip Technology Inc 2N6354

    TRANS NPN 120V 10A TO204AA
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    Microchip Technology Inc JAN2N6351

    TRANS NPN DARL 150V 5A TO-33
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    2N635 Datasheets (185)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N635 Germanium Power Devices Germanium NPN Transistors Scan PDF
    2N635 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N635 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N635 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N635 Unknown Vintage Transistor Datasheets Scan PDF
    2N635 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N635 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N635 Unknown GE Transistor Specifications Scan PDF
    2N635 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6350 Microsemi NPN Darlington Power Silicon Transistor Original PDF
    2N6350 API Electronics Short form transistor data Short Form PDF
    2N6350 API Electronics Short form transistor data Short Form PDF
    2N6350 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6350 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6350 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6350 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6350 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6350 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6350 New England Semiconductor BIPOLAR DARLINGTON Scan PDF
    2N6350 PPC Products Transistor Short Form Data Scan PDF
    ...

    2N635 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N6359

    Abstract: No abstract text available
    Text: JMnic Product Specification 2N6359 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High DC current gain ・Excellent safe operating area APPLICATIONS ・Designed for high power applications and switching circuits such as relay


    Original
    2N6359 2N6359 PDF

    2N6355

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N6355 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High DC current gain ·DARLINGTON APPLICATIONS ·For general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION


    Original
    2N6355 2N6355 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6353 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)150 h(FE) Min. Current gain.1.0k


    Original
    2N6353 Freq50M PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6352+JANTX Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)80ã V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.2.0k


    Original
    2N6352 Freq50M PDF

    2N6351

    Abstract: No abstract text available
    Text: 2N6350 and 2N6351 NPN Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/472 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is military qualified up to the JANTXV level. This TO-33


    Original
    2N6350 2N6351 MIL-PRF-19500/472 T4-LDS-0314, 2N6351 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6352 and 2N6353 NPN Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/472 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is military qualified up to the JANTXV level. This TO-213AA


    Original
    2N6352 2N6353 MIL-PRF-19500/472 O-213AA T4-LDS-0315, PDF

    2N6350

    Abstract: 2N6350 equivalent
    Text: 2N6350 and 2N6351 NPN Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/472 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is military qualified up to the JANTXV level. This TO-33


    Original
    2N6350 2N6351 MIL-PRF-19500/472 T4-LDS-0314, 2N6350 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N635 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)300m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.25 h(FE) Max. Current gain.


    Original
    2N635 Freq10MÂ PDF

    2N6354

    Abstract: No abstract text available
    Text: JMnic Product Specification 2N6354 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Excellent safe operating area ・Fast switching speed ・Low collector saturation voltage ・High power dissipation APPLICATIONS ・For switching applications in military


    Original
    2N6354 2N6354 PDF

    2N6358

    Abstract: No abstract text available
    Text: JMnic Product Specification 2N6358 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・DARLINGTON APPLICATIONS ・For general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION 1 Base 2


    Original
    2N6358 2N6358 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6353+JANTXV Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)150 h(FE) Min. Current gain.1.0k


    Original
    2N6353 Freq50M PDF

    2N6351

    Abstract: No abstract text available
    Text: 2N6351+JANTXV Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)5.0# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.1.0k


    Original
    2N6351 Freq50M PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6352+JAN Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)80ã V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)25# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.2.0k


    Original
    2N6352 Freq50M PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6351+JANTX Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)150ã V(BR)CBO (V)150 I(C) Max. (A)10 Absolute Max. Power Diss. (W)5.0# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.1.0k


    Original
    2N6351 Freq50M PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6350+JANTX Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)80ã V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)5.0# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.2.0k


    Original
    2N6350 Freq50M PDF

    2N6354

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N6354 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Excellent safe operating area ·Fast switching speed ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·For switching applications in military


    Original
    2N6354 2N6354 PDF

    2n6356

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N6356 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High DC current gain ·DARLINGTON APPLICATIONS ·For general-purpose amplifier and low-frequency switching applications PINNING PIN DESCRIPTION


    Original
    2N6356 2n6356 PDF

    2N6353

    Abstract: 2n6351 RB1-E
    Text: SÖE D TELED YN E COMPONENTS ö*il7bC15 üDQtiS42 t. T -3 3 -a 7 NPN POWER DARLINGTON 5AMP SWITCHING TRANSISTORS 2N6350 thru 2N6353 GEOMETRY 508 • KD5A • LowVCE Sat • High Gain TO-33 • Monolithic Construction MAXIMUM RATINGS SYMBOL 2N6350 2N6351 2N6352 2N6353 UNIT


    OCR Scan
    il7bC15 DQtiS42 2N6350 2N6353 100ohms 2N6351 2N6352 2N6353 10MHZ RB1-E PDF

    BUW23

    Abstract: No abstract text available
    Text: M U L T IE P IT A X IA L P LAN A R - TO -3 c o n tin u e d NPN BUX41 , BUX41N BUX42 2N5038 2N5039 2N5671 2N5672 2N6032 2N6033 2N6354 2N6496 ' to« Vcio (V) Veto (V) lc (*) P» (W) 250 220 300 150 120 120 150 120 150 150 150 200 160 250 90 75 90 120 90 120


    OCR Scan
    BUX41 BUX41N BUX42 2N5038 2N5039 2N5671 2N5672 2N6032 2N6033 2N6354 BUW23 PDF

    Untitled

    Abstract: No abstract text available
    Text: o H DA RLIN GTON O flffcil « M t l t t O T O N M W PACKAGE ec TO-33 < û F-24 TO-21 3/TO-66 TO-204/TO-3 PACKAGE TO-21 3/TO-66 k V O LT S 2N635Q" 2M6351“ *C @ *6 A A 1.0/5.0 1.5 5.0/0.005 1000 1.0/5.0 1.5 5.0/0.01 *C @ V C E A V ^ C E s a t m ax V O LT S


    OCR Scan
    2N635Q" 2M6351" 2N6352" 2N6353" 3/TO-66 2N6300" 2N6301" O-204/TO-3 2N6383* 2N6384M PDF

    TO-213

    Abstract: 2N6297 WF24 2N6351
    Text: A POW ERHOUSE BIPOLAR TO-33 w b v CEO VOLTS PEAK >C AMPS hFE min/max < < o m D E /ICE TYPE PACKAGE o N PN D A R L IN G T O N POW ER T R A N S IS T O R S VCE sat max VOLTS •c @ !b A A 2N6350* 80 5.0 2000 1.0/5.0 1.5 5.0/0.005 2N6351* 150 5.0 1000 1.0/5.0


    OCR Scan
    2N6350* 2N6351* O-213/ 2N6352* 2N6353* 2N6300* 2N6301* O-204/TO-3 2N6383* 2N6384* TO-213 2N6297 WF24 2N6351 PDF

    2N6350

    Abstract: No abstract text available
    Text: JAN, JAN, JAN, JAN, POWER DARLINGTONS 5 Amp, 150V, NPN JANTX JANTX JANTX JANTX & & & & JANTXV JANTXV JANTXV JANTXV 2N6350 2N6351 2N6352 2N6353 DESCRIPTION U n itro d e N P N D a riin g ton s co n sist of a two tra n sisto r c ir c u it on a sin gle m o n o lith ic plan ar ch ip. The 2N6350


    OCR Scan
    2N6350 2N6351 2N6352 2N6353 2N63S2 2N6350 2NS35I PDF

    2N6354

    Abstract: 2NG354 2N6496 2ng3 150V15
    Text: 2N6354 2 N6496 POWER TRANSISTORS 20 Amp, 150 V, Double Diffused NPN Mesa FEATURES DESCRIPTION • • • • These double diffused glass passivated mesa power transistors combine fastswitching, low saturation voltage and rugged Es/b capability. They are de­


    OCR Scan
    2N6354 N6496 500ns 2N6496 2NG354 2N6496 2ng3 150V15 PDF

    2N6226

    Abstract: 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385
    Text: A P I E LECTRONICS INC 0043592 Ëb A P I ELECTRONICS DE INC I DÜMBSTE 26C.00Z31 DDDD231 □ »T-BS-il CONTINUED D ev ice No C a se 2N6262 2N6350 2N6351 2N6352 T O -3 T O -33 T O -3 3 TO6 6 /3 TO6 6 /3 T O -3 T O -3 T O -3 T O -3 T O -66 T O -3 T O -3 T O -3


    OCR Scan
    DDD0231 00Z31 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6226 2N6385 PDF