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    2N6677 Price and Stock

    Microchip Technology Inc 2N6677

    TRANS NPN 350V 15A TO204AA
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    RCA 2N6677

    TRANSISTOR,BJT,NPN,350V V(BR)CEO,15A I(C),TO-3
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    2N6677 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6677 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=15 / Hfe=8min / fT(Hz)=15M / Pwr(W)=175 Original PDF
    2N6677 Allen-Bradley Electronic Component Data Book 1985 Scan PDF
    2N6677 Boca Semiconductor NPN SILICON POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=15 / Hfe=8min / fT(Hz)=15M / Pwr(W)=175 Scan PDF
    2N6677 Diode Transistor Transistor Short Form Data Scan PDF
    2N6677 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    2N6677 General Electric Power Transistor Data Book 1985 Scan PDF
    2N6677 General Electric 15 A SwitchMax power transistor. High voltage N-P-N type. - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=15 / Hfe=8min / fT(Hz)=15M / Pwr(W)=175 Scan PDF
    2N6677 General Electric High Voltage Bipolar Power Transistors Scan PDF
    2N6677 General Semiconductor Low Frequency Silicon Power NPN Transistor Scan PDF
    2N6677 Microsemi NPN Darlington Transistors Scan PDF
    2N6677 Mospec POWER TRANSISTORS(15A,175W) - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=15 / Hfe=8min / fT(Hz)=15M / Pwr(W)=175 Scan PDF
    2N6677 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6677 Motorola European Master Selection Guide 1986 Scan PDF
    2N6677 Motorola NPN silicon power transistor. 15 A, 350 V, 175 W. - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=15 / Hfe=8min / fT(Hz)=15M / Pwr(W)=175 Scan PDF
    2N6677 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6677 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6677 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6677 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6677 Unknown Transistor Replacements Scan PDF
    2N6677 Unknown Transistor Replacements Scan PDF

    2N6677 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    power transistor 200V, 30A

    Abstract: 2N6678 Rl135 2n6677
    Text: 2N6676 2N6677 2N6678 NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6676 SERIES types are NPN Silicon Power Transistors designed for high voltage switching applications. MARKING: FULL PART NUMBER


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    2N6676 2N6677 2N6678 200mA 2N6676) power transistor 200V, 30A Rl135 PDF

    2N6677

    Abstract: No abstract text available
    Text: 2N6677 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2N6677 O204AA) 31-Jul-02 2N6677 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6677 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2N6677 O204AA) 16-Jul-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6677 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    2N6677 O204AA) 18-Jun-02 PDF

    2N6678

    Abstract: 2N6677 2N6676
    Text: SavantIC Semiconductor Product Specification 2N6676 2N6677 2N6678 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS Designed for high voltage switching applications such as :


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    2N6676 2N6677 2N6678 2N6676 2N6677 2N6678 PDF

    2SC2751M

    Abstract: 2sd377 bup13
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= TIP531 TIP531 TIP533 TIP533 TIP533 BUP23 BUP23 BUP23 BUS23 BUS23 20 25 30 35 40 45 50 (A) (A) (A) (A) CAl SDM4039 SDM4041 BU121 BUX13 SDM4040 SDM4045 SML14413 PTC6677P 2N6934 2N6934 MJH6677 RJH6677 2N6677


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    O-247var 47Var 2SC2751M 2sd377 bup13 PDF

    2N6678

    Abstract: 2N6676 2N6677 Rl135
    Text: Inchange Semiconductor Product Specification 2N6676 2N6677 2N6678 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage capability ・Fast switching speeds ・Low saturation voltage APPLICATIONS Designed for high voltage switching


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    2N6676 2N6677 2N6678 2N6676 2N6677 2N6678 Rl135 PDF

    2N6676

    Abstract: 2N6677 2N6678
    Text: Æ&m o s p e c NPN SILICON POWER TRANSISTORS NPN 2N6676 2N6677 2N6678 The 2N6676,2N6677and 2N6678 transistor are designed for high voltage switching applications such as: FEATURES ‘ Off-Line Power Supplies ‘ Converter Circuits *Pulse Width Modulated Regulators


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    2N6676 2N6677and 2N6678 2N6677 2N6678 2N6676 PDF

    BC140-16

    Abstract: T053 BC109C NPN BC108A BC107A bc108 IC hr 2N6589 2N6590 2N6609 2N6653
    Text: MAE D • 0133187 0 0 0 D M4 5 SEM ELABE G31 I S ML B SEMELAB LTD BI-POLAR TRANSISTO RS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N6589 2N6590 2N6594 2N6609 2N6653 2N6654 2N6655 2N6671 2N6672 2N6673 2N6674 2N6675 2N6676 2N6677 2N6678 2N6686 2N6687 2N6688


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    ai331fl7 0000MH5 2N6589 2N6590 2N6594 2N6609 2N6653 10min 2N6654 BC140-16 T053 BC109C NPN BC108A BC107A bc108 IC hr PDF

    Untitled

    Abstract: No abstract text available
    Text: ¡lU CROSEMl CORP/POüJER 02 I ^ F |t ,l l S ^ S O 0 0 0 0 4 5 0 b "J~ D T '3 3 - / . 5 2N6676 2N6677 2N6678 - .T ^ H N O C O G Y .;_V V ; Po we r Tec h nö ió gÿ Co m poh e nis HIGH VOLTAGE NPN TRANSISTORS 15 AMPERES : 400 VOLTS 30 <01 1 » 3 Ï3901 139961 MAX


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    2N6676 2N6677 2N6678 2N6676, 2N6677 2N6678 0D00431 PDF

    2C3303

    Abstract: ca3725 6676 transistor transistor C200 2N6676 2CS9
    Text: File Number 2N6676, 2N6677, 2N6678 HARRIS SEMICOND SECTOR 1165.1 M 3 0 S 2 7 1 D D 4 0 b 20 EfiM • HAS SbE D T ’3 3 ~ / 9 15-A Sw ItehM aX Power Transistors TERMINAL DESIGNATIONS High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications


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    2N6676, 2N6677, 2N6678 2N6676 2N6677 2N6678 2N6676. 2C3303 ca3725 6676 transistor transistor C200 2CS9 PDF

    RJH6676

    Abstract: 2n6676
    Text: Power Transistors. T~33~\3 2N6676, 2N6677, 2N6678, RJH6676, RJH6677, RJH6678 File Number HARRIS SEMICOND SECTOR 1 5 -A S w ite h ffla X 27E D • 1165 4302S71 QQSGObQ S BiHAS P o w e r T ra n s is to rs TERMINAL DESIGNATIONS H ig h -V o lta g e N -P -N T y p e s fo r O ff-L in e P o w e r S u p p lie s and


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    2N6676, 2N6677, 2N6678, RJH6676, RJH6677, RJH6678 4302S71 2N6676 2N6677 2N6678 RJH6676 PDF

    NPN power transistor 15A amperes

    Abstract: 135AI L50C1 EM2030 D64VS3 2N66 2N667 2N6676 2N6677 2N6678
    Text: HIGH VOLTAQE/HIQH SPEED 2N6676.77.78 NPN POWER TRANSISTORS 300-400 VOLTS 15 AMP, 175 WATTS G E EQUIVALENT D64VS3,4, 5 The 2N6676, 2N6677 and 2N6678 series of NPN power transistors is designed for use in power switching applica­ tions requiring high-voltage capability, fast switching speeds


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    D64VS3 2N6676, 2N6677 2N6678 2N667 in5626j NPN power transistor 15A amperes 135AI L50C1 EM2030 2N66 2N6676 PDF

    jan2n6251

    Abstract: No abstract text available
    Text: Memsemi NPN Transistors Part Number NPN JANTXV2N6249 2N6250 JAN2N6250 JANS2N6250 JANTX2N6250 JANTXV2N6250 2N6674 2N6689 2N6251 JAN2N6251 JANS2N6251 JANTX2N6251 JANTXV2N6251 2N6675 2N6690 2N6546 2N6676 2N6691 JAN2N6546 JANTX2N6546 JANTXV2N6546 2N6677 2N6692


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    NPN-20 jan2n6251 PDF

    CA3725

    Abstract: MJH6678 2N6678 transistor MJH6678 2N6350 2N6677 motorola 3-251 2N6678 motorola MJH6677 2N6648
    Text: MOTOROLA SC 6367254 íXSTRS/R "Tb F> M O T OR O L A SC CXSTRS/R F DE Jt.Btz.7SSM O O ñ D S l b H 96D 6 0 5 1 6 D T-33-/3 2N6648 See Page 3-209 MOTOROLA SEMICONDUCTOR TECHNICAL DATA N P N S ilic o n P o w e r T ran sisto rs 2N6676 2N6677 2N6678 The 2N6676, 2N6677, 2N6678, MJH6676, MJH6677, and MJH6678 transistors are


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    2N6676, 2N6677, 2N6678, MJH6676, MJH6677, MJH6678 2N6676 MJH6676 2N6677 MJH6677 CA3725 2N6678 transistor MJH6678 2N6350 motorola 3-251 2N6678 motorola MJH6677 2N6648 PDF

    2N6676

    Abstract: 40321 40361 2N6677 2N6678 2N6738 2N6739 2N6740 40406 2N6752
    Text: 0258354 ADVANCED SEM ICONDUCTOR 1 fl2 TRANSISTORS Po @ Tc=25°C DEVICE TYPE NO. 2N6676 2N6677 2N6678 2N6738 2N6739 2N6740 2N6751 2N6752 2N6753 2N6754 2N6834 2N6835 2N6836 40080 40081 40084 40231 40232 40232 40234 40235 40236 40237 40238 40239 40240 40242 40243


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    2N6676 2N6677 2N6678 2N6738 T0220 2N6739 2N6740 2N6751 2N6752 T0220 40321 40361 40406 PDF

    aX 010

    Abstract: 2N6693 JS 027
    Text: ,lk 2N6676 2N6677 2N6678 2N6691 2N6692 2N6693 General 3 ^ Semiconductor ^ « Industries, Inc. HIGH POWER NPN twitch P/iff TRANSISTORS NPN 300, 350, 400V 15 A M P S W IT C H IN G t, — 300ns T Y P IC A L This rugged series o f NPN tra n s ito rs is designed fo r high speed s w itch in g


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    2N6676 2N6677 2N6678 2N6691 2N6692 2N6693 2N6676-78 2N6691-93 -61/lso aX 010 2N6693 JS 027 PDF

    2N6678 motorola

    Abstract: Motorola 3-252 ca3725 Motorola Transistor 3-252 JH transistor 6676 transistor Motorola 3-252 to-3
    Text: "Tb MOTOROLA SC iXSTRS/R F> 6367254 M OT O R O L A SC CXSTRS/R F DE Jt.3t.72SM OOÛOSlt. 2 96D 60 516 D T-33-13 2IM6648 M O TO RO LA See Page S E M IC O N D U C T O R TECH N ICAL DATA 3-209 N P N Silico n Pow er T ransistors 2N6676 2N6677 2N6678 The 2N6676, 2N6677, 2N6678, MJH6676, MJH6677, and MJH6678 transistors are


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    T-33-13 2IM6648 2N6676 2N6677 2N6678 MJH6676 MJH6677 MJH6678 2N6676, 2N6677, 2N6678 motorola Motorola 3-252 ca3725 Motorola Transistor 3-252 JH transistor 6676 transistor Motorola 3-252 to-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE NPN TO-3 * Tc = 25°C ’ Typical 6 DEVICE TYPE 2N6032 2N6033 2N6274 2N6275 2N6276 2N6277 2N6322 2N6323 2N6326 2N6327 2N6338 2N6340 2N6341 2N6354 2N6510 2N6511 2N6512 2N6677 2N6678 2N6686 2N6687


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    2N6032 2N6033 2N6274 2N6275 2N6276 2N6277 2N6322 2N6323 2N6326 2N6327 PDF

    2N6678

    Abstract: transformerless inverter 2N6676 2N6677 DO820
    Text: Series 2N6676, 2N6677, 2N6678 High Voltage NPN Transistors 15 Amperes • 400 Volts FEA TURES • High Voltage Rating— 400 Volts • Glass Passivation • Superior Resistance to Thermal Fatigue • Industrial and Military Applications APPLICATIONS • Switching Regulators


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    2N6676, 2N6677 2N6678 2N6677, 2N6678 transformerless inverter 2N6676 DO820 PDF

    rca 2n6678

    Abstract: RJH6676 2N6678 RJH6678 2N6676 40251 RJh*6678 2N8678 RCA 40251 RJH6677
    Text: 3875081 G E SOLID STATE~°i Ïm T I 3E7S[]ai DG17Q2E 3 r Power Traiwtetore_ J M 2N6676, 2N6677, 2N6678, RJH6676, RJH6677, RJH6678 1 5 -A S w itc h M m C P o w e r Transistors File Num ber 1165 TERMINAL DESIGNATIONS High-Voltage N-P-N Types for Off-Line Power Supplies and


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    17D5E 2N6676, 2N6677, 2N6678, RJH6676, RJH6677, RJH6678 TQ-204AA 2N6676 2N6677 rca 2n6678 RJH6676 2N6678 40251 RJh*6678 2N8678 RCA 40251 RJH6677 PDF

    2N6676

    Abstract: 2N6677 2N6678
    Text: NPN SILICON POWER TRANSISTORS NPN 2N6676 2N6677 2N6678 The 2N6676,2N6677and 2N6678 transistor are designed for high voltage switching applications such as: FEATURES ‘ Off-Line Power Supplies ‘ Converter Circuits *Pulse Width Modulated Regulators Specification Feature­


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    2N6676 2N6677and 2N6678 2N6677 2N6678 2N6676 PDF

    JANTX 2N6340

    Abstract: 2N6686 815 transistor 2N6032 Transistor 2N6274A 2N6275 2N6276 2N6277A 2N6322 2N6323
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE DEVICE TYPE Vceo sus VOLTS Ic (max) AMPS NPN TO-3 2N6032A 2N6033A 2N6274A 2N6275 2N6276 2N6277A 2N6322 2N6323 2N6326 2N6327 2N6338A 2N6340 2N6341A 2N6354 2N6510 2N6511 2N6512 2N6676A 2N6677 2N6678A


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    2N6032A 2N6033A 2N6274A 2N6275 2N6276 2N6277A 2N6322 2N6323 2N6326 2N6327 JANTX 2N6340 2N6686 815 transistor 2N6032 Transistor PDF

    1000c

    Abstract: 2N6677
    Text: 2N6677 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6677 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE TO- 3 15 A Ib 5.0 A 400 V O m le < MAXIMUM RATINGS 175 W @ Te # 25 °C P d is s Tj -65 0C to +200 0C


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    2N6677 1000c PDF