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    Microchip Technology Inc 2N6691

    POWER BJT
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    Microchip Technology Inc JAN2N6691

    Power BJT _ TO-61, Projected EOL: 2049-02-05
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    Microchip Technology Inc JANTX2N6691

    Power BJT _ TO-61, Projected EOL: 2049-02-05
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    Microchip Technology Inc JANTX2N6691
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    Microchip Technology Inc JANTXV2N6691

    Power BJT _ TO-61, Projected EOL: 2049-02-05
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    Microchip Technology Inc JANTX2N6691-LC

    Power BJT
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    2N6691 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N6691 Microsemi Original PDF
    2N6691 Diode Transistor Transistor Short Form Data Scan PDF
    2N6691 General Semiconductor Low Frequency Silicon Power NPN Transistor Scan PDF
    2N6691 General Transistor Power Transistor Selection Guide Scan PDF
    2N6691 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6691 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6691 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6691 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6691 New England Semiconductor BIPOLAR ISOLATED COLLECTOR NPN TO-61 / TO-111 Scan PDF
    2N6691 New England Semiconductor NPN TO-61 Transistor Scan PDF
    2N6691 PPC Products Transistor Short Form Data Scan PDF
    2N6691 PPC Products Transistor Selection Guide Scan PDF
    2N6691 PPC Products Transistor Selection Guide including JAN / JANTX / JANTXV Scan PDF
    2N6691JANTX Microsemi NPN POWER SILICON TRANSISTOR Original PDF
    2N6691JANTXV Microsemi NPN POWER SILICON TRANSISTOR Original PDF
    2N6691JTX New England Semiconductor NPN POWER SWITCHING SILICON TRANSISTOR Original PDF
    2N6691JTXV New England Semiconductor NPN POWER SWITCHING SILICON TRANSISTOR Original PDF

    2N6691 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6678

    Abstract: 2N6676 2N6691 2N6693
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/538 Devices 2N6676 Qualified Level 2N6678 2N6691 JAN JANTX JANTXV 2N6693 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage


    Original     		PDF MIL-PRF-19500/538 2N6676 2N6678 2N6691 2N6693 2N6676 2N6691 2N6678 2N6693

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 538 Qualified Level Devices 2N6676 2N6678 2N6691 JAN JANTX JANTXV 2N6693 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage


    Original     		PDF MIL-PRF-19500/ 2N6676 2N6678 2N6691 2N6693 2N6676 2N6691

    2N6678

    Abstract: 2N6676 2N6693 2N6691
    Text: TECHNICAL DATA 2N6676 JAN, JTX, JTXV 2N6678 JAN, JTX, JTXV 2N6691 JAN, JTX, JTXV 2N6693 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/538 NPN POWER SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage


    Original     		PDF 2N6676 2N6678 2N6691 2N6693 MIL-PRF-19500/538 2N6676 2N6691 2N6678 2N6693

    2N6678

    Abstract: 2N6676 2N6693 2N6691 JANTX 2n6678
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/538 Devices 2N6676 Qualified Level 2N6678 2N6691 JAN JANTX JANTXV 2N6693 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage


    Original     		PDF MIL-PRF-19500/538 2N6676 2N6678 2N6691 2N6693 2N6678 2N6676 2N6693 2N6691 JANTX 2n6678

    1N6762

    Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
    Text: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index


    Original     		PDF MIL-PRF-19500 2N720A 2N1131 2N1132 2N1893 JANHC2N2222A JANKC2N2222A JANH3057A 2N3250A 2N3251A 1N6762 JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB

    cczl

    Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
    Text: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL


    Original     		PDF QML-9500-19 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 cczl 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251

    2N6805

    Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab


    Original     		PDF 2S81188 2S8891 2S8632K SML3552 SML3575 SML3578 SML69501 SML69509 2N6805 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    equivalent for transistor tt 2222

    Abstract: 2N6678T1 2N6676T1 JANS 2N6678T1 2N6691 2N6693 2n6678 2N6676 JANS 2N6676T1 2N6678 JANTX equivalent
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 25 July 2009. MIL-PRF-19500/538E 25 April 2009 SUPERSEDING MIL-PRF-19500/538D 26 June 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,


    Original     		PDF MIL-PRF-19500/538E MIL-PRF-19500/538D 2N6676, 2N6678, 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2N6691, 2N6693, equivalent for transistor tt 2222 2N6678T1 2N6676T1 JANS 2N6678T1 2N6691 2N6693 2n6678 2N6676 JANS 2N6676T1 2N6678 JANTX equivalent

    NSP5665

    Abstract: sat 1205
    Text: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *


    Original     		PDF 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 O-254 NSP6340 NSP5665 sat 1205

    jan2n6251

    Abstract: No abstract text available
    Text: Memsemi NPN Transistors Part Number NPN JANTXV2N6249 2N6250 JAN2N6250 JANS2N6250 JANTX2N6250 JANTXV2N6250 2N6674 2N6689 2N6251 JAN2N6251 JANS2N6251 JANTX2N6251 JANTXV2N6251 2N6675 2N6690 2N6546 2N6676 2N6691 JAN2N6546 JANTX2N6546 JANTXV2N6546 2N6677 2N6692


    OCR Scan     		PDF NPN-20 jan2n6251

    2N5076

    Abstract: TO61 package 2N5004 JANTXV 2n5349 2N5006 2N5008 2N5288 2N5317 2N5319 2N6128
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR ISOLATED COLLECTOR NPN TO-61 V c eo Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS NPN TO-61 2N5006 2N5008 2N5288 2N5317 2N5319 2N6128 2N6689 2N6690 2N6691A 2N6692 2N6693A 80 80 100 80 100 80 300 400 300 350 400 10 10 10 10


    OCR Scan     		PDF 2N5006 2N5008 2N5288 2N5317 2N5319 2N6128 2N6689 2N6690 2N6691A 2N6692 2N5076 TO61 package 2N5004 JANTXV 2n5349

    aX 010

    Abstract: 2N6693 JS 027
    Text: ,lk 2N6676 2N6677 2N6678 2N6691 2N6692 2N6693 General 3 ^ Semiconductor ^ « Industries, Inc. HIGH POWER NPN twitch P/iff TRANSISTORS NPN 300, 350, 400V 15 A M P S W IT C H IN G t, — 300ns T Y P IC A L This rugged series o f NPN tra n s ito rs is designed fo r high speed s w itch in g


    OCR Scan     		PDF 2N6676 2N6677 2N6678 2N6691 2N6692 2N6693 2N6676-78 2N6691-93 -61/lso aX 010 2N6693 JS 027

    2N5048

    Abstract: 2N4301 2N5049 2N5218 2N5313 2N5315 2N5387 2N5388 2N5542 2N5959
    Text: ^4 ^TRANSISTOR CO DE J a ñ M ñ 3 S E INC D D O O I E 11] S 84D 00129 D10DETRdf\l515T0R TO., INC. 201 686-0400 • Telex: 139-335 • Outside N Y & NJ area call T O LL FREE 600-526-4581 FAX No. 201-575-5863 NPNTO-61 Type# PHP Com ple­ ment VCEOfSUS) (Volte)


    OCR Scan     		PDF NPNTO-61 2N4301 2N5048 2N5049 2N5313 2N5008 2N5288 2N5289 2N5317 2N5319 2N5048 2N4301 2N5049 2N5218 2N5313 2N5315 2N5387 2N5388 2N5542 2N5959

    10J2

    Abstract: 2N6563 3f05 sf 1012 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813
    Text: NEW ENGLAND SEMICOND UCT OR INIPIM T O - 6 1 PNP Comple­ ment VCEO SUS (V) 0000053 [ See page 13 for isolated collector versions Case 805 Type No. S^E D VCE (SAT) @ IC/lB ( V @ A/A) VBE @ IC/VCE (V @ Art) VBE (SAT) @ IC/lB STÛ • NES I(max) = 5 to 2 0 A


    OCR Scan     		PDF 0-300V 2N1724 2N1724A 2N1725 2N6588 2N6589 2N6590 2N6689 2N6690 2N6691 10J2 2N6563 3f05 sf 1012 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813

    wic 5020

    Abstract: 2N5289 2N4301 2N5048 2N5049 2N5218 2N5313 2N5315 2N5387 2N5388
    Text: ^4 ^TRANSISTOR CO DE J a ñ M ñ 3 S E D D O O I E 11] S INC 84D 00129 D10DETRdf\l515T0R TO., INC. 201 686-0400 • Telex: 139-335 • Outside NY & NJ area call TOLL FREE 600-526-4581 FAX No. 201-575-5863 NPNTO-61 Type# PNP C o m p le­ m en t VCEOfSUS)


    OCR Scan     		PDF NPNTO-61 2N4301 2N5048 2N5049 2N5313 2N5008 2N5288 2N5289 2N5317 2N5319 wic 5020 2N5289 2N4301 2N5048 2N5049 2N5218 2N5313 2N5315 2N5387 2N5388

    2N1724

    Abstract: 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487 2N3488 2N3489
    Text: General Transistor Corporation CASE le m a x TO-61 ss 5 to 20A V c e o (s u s ) = 4 0 -3 0 0 V NPN Power Transistors Typ. NO. VCEO («•) M 1C (mu) (A) hFE C/VCE |n lH U l & A/Y) 2N1724 2N1724A 2N1725 2N2611 80 120 80 50 5 5 5 10 20-90 @2/15 30-90 @2/15


    OCR Scan     		PDF 0-300V 2N1724 2N1724A 2N1725 2N2811 2N2812 2N6590 2N6689 2N6690 2N6691 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487 2N3488 2N3489

    2N4839

    Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
    Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i


    OCR Scan     		PDF 2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 050-H O-107 O-126 2N4839 TO114 package 2N5860 2N1724A 2N3716

    1040B

    Abstract: 2N3910 svt6062 2n5100
    Text: =1 TYPE 1015 NPN 1 GEOMETRY PHYSICAL CHARACTERISTICS 1. 2. 3. 4. Chip size. Chip hickness. Top metal. Back metal. 5. Backside. 6. Bonding pad. 2020 PNP 1. 2. 3. 4. Chip size. Chip thickness. Top metal.


    OCR Scan     		PDF 1020B 15X19 3kA/10kA/I0kA 3kA/10kA/10kA 2N6674 2N6675 2N6676 2N6677 1040B 2N3910 svt6062 2n5100

    GSTU4040

    Abstract: 2n6547 jantx
    Text: \ Ic = 2 .0 A M P S DEVICE TYPE 2N4300 2N4863 2N4864 2N5148 ^N S150 VOLTS B^cbo/ BVcev VOLTS ^EBO VOLTS @100°C WATTS Min. Mix 80 120 120 80 80 100 140 140 100 100 8.0 8.0 8.0 6.0 6.0 15.0 4.0 16.0 40.0 4.0 3 0 -1 2 0 5 0 -1 5 0 5 0 -1 5 0 3 0 - 90 7 0 -2 0 0


    OCR Scan     		PDF 2N4300 2N4863 2N4864 2N5148 2N3418 2N3419 2N3420 2N3421 2N3506 2N3507 GSTU4040 2n6547 jantx

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    9300

    Abstract: 2N5561 2N5330 2N3729 2N4025 2n6561 9301
    Text: SEMICOA IflE D BVce0 Range lc Max. BVeb0 Range • ûlBMbia OGOG1SE M ■ Low Current HFE Mid-Range HFE High Current HFE To V @lc mA Min. @ lc mA Min. 4 6 0.1 30 10 40 300 40 4 6 0.1 20 2 20 140 20 40 3 6 .01 15 2 30 250 20 20 2 4,3 20 60 3 7 .10 20 2 30


    OCR Scan     		PDF 2N5004 2N5005 2N5008 2N5009 2N5038 2N5039 2N5077 2N5085 2N5149 2N5150 9300 2N5561 2N5330 2N3729 2N4025 2n6561 9301

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le max ss TO-61 5 to 20A Vceo(sus) = 40-300V NPN Power Transistors VBE(SAT) 0IC/1B (V & A/V) ICEV0VCE (mA V) PO® TC = 25*C (W.M) Wt>®VCE I I I wc (A ®V) Ir (MHz) ton & W B (ju ® A/A) tOFF @IC/1B (p»®AfA) 1 @ 21.2


    OCR Scan     		PDF 0-300V 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2B14 2N3487 2N3488

    2N3729

    Abstract: 2N3551 2N6925A 2N6583 2N6923 2n6924
    Text: AVAILABLE GEOMETRIES — SORTED BY Ic MAX lcMAX BV ceo Ran§e BV ebo Ran8e Low Current HfE From V To (V) From (V) To (V) @ lc mA Mid-Range HfE High Current HtE Typ VCE(sat) Typ Typ Cib @ 0.5V Cob @ 10V ^S/b A Geom. Pol. Use Code 0.03 0014 PNP 2 10 25 4 6


    OCR Scan     		PDF 2N6340 2N6341 2N6350 2N6351 2N6352 2N6353 2N6378 2N6379 2N6381 2N6382 2N3729 2N3551 2N6925A 2N6583 2N6923 2n6924