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    2N6689 Price and Stock

    Microchip Technology Inc 2N6689

    POWER BJT
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    Microchip Technology Inc JAN2N6689

    Power BJT _ TO-61, Projected EOL: 2049-02-05
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    Microchip Technology Inc JANTX2N6689

    Power BJT _ TO-61, Projected EOL: 2049-02-05
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    Microchip Technology Inc JANTX2N6689
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    Microchip Technology Inc JANTXV2N6689

    Power BJT _ TO-61, Projected EOL: 2049-02-05
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    Microchip Technology Inc JANTXV2N6689
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    Microchip Technology Inc JAN2N6689-LC

    Power BJT
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    2N6689 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6689 Microsemi NPN POWER SILICON TRANSISTOR Original PDF
    2N6689 Diode Transistor Transistor Short Form Data Scan PDF
    2N6689 General Semiconductor Low Frequency Silicon Power NPN Transistor Scan PDF
    2N6689 General Transistor Power Transistor Selection Guide Scan PDF
    2N6689 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6689 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6689 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6689 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6689 New England Semiconductor BIPOLAR ISOLATED COLLECTOR NPN TO-61 / TO-111 Scan PDF
    2N6689 New England Semiconductor NPN TO-61 Transistor Scan PDF
    2N6689 PPC Products Transistor Short Form Data Scan PDF
    2N6689JAN Microsemi NPN POWER SILICON TRANSISTOR Original PDF
    2N6689JANTX Microsemi NPN POWER SILICON TRANSISTOR Original PDF
    2N6689JANTXV Microsemi NPN POWER SILICON TRANSISTOR Original PDF

    2N6689 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6689

    Abstract: 2N6674 2N6675 2N6690
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/537 Devices 2N6674 Qualified Level 2N6675 2N6689 JAN JANTX JANTXV 2N6690 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage


    Original     		PDF MIL-PRF-19500/537 2N6674 2N6675 2N6689 2N6690 2N6674 2N6689 2N6675 2N6690

    2N6674

    Abstract: 2N6675 2N6689 2N6690
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/537 Devices 2N6674 Qualified Level 2N6675 2N6689 JAN JANTX JANTXV 2N6690 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage


    Original     		PDF MIL-PRF-19500/537 2N6674 2N6675 2N6689 2N6690 2N6674 2N6675 2N6689 2N6690

    2N6675

    Abstract: 2N6674 2N6689 2N6690
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/537 Devices Qualified Level 2N6674 JAN JANTX JANTXV 2N6675 2N6689 2N6690 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage


    Original     		PDF MIL-PRF-19500/537 2N6674 2N6675 2N6689 2N6690 2N6674 2N6689 2N6675 2N6690

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 537 Qualified Level Devices 2N6674 2N6675 2N6689 JAN JANTX JANTXV 2N6690 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage


    Original     		PDF MIL-PRF-19500/ 2N6674 2N6675 2N6689 2N6690 2N6674 2N6689

    cczl

    Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
    Text: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL


    Original     		PDF QML-9500-19 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 cczl 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251

    2N6805

    Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab


    Original     		PDF 2S81188 2S8891 2S8632K SML3552 SML3575 SML3578 SML69501 SML69509 2N6805 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525

    NSP5665

    Abstract: sat 1205
    Text: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *


    Original     		PDF 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 O-254 NSP6340 NSP5665 sat 1205

    KT926A

    Abstract: 2sc1586 sanken 2SC2607 SANKEN KT926B 2S0555 KT926 2sc2921 sanken KT945A 2SC2431 2SC2565 fujitsu
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 KT926A KT926B KT945A 2N1818 2N2118 2SC1440 2SC1585 2SC1585 ~~~~:g6 25 30 35 40 BUY58 2SC2921 2S0424 250424 2SC2461A•R 2SC2565 2SC2461A·0 2SC2461A·Y 2S0552 2S0552R 2S0424R 2S04240 SML14411 BUY72 BUY72


    Original     		PDF 204AA 218AC 204AA KT926A 2sc1586 sanken 2SC2607 SANKEN KT926B 2S0555 KT926 2sc2921 sanken KT945A 2SC2431 2SC2565 fujitsu

    jan2n6251

    Abstract: No abstract text available
    Text: Memsemi NPN Transistors Part Number NPN JANTXV2N6249 2N6250 JAN2N6250 JANS2N6250 JANTX2N6250 JANTXV2N6250 2N6674 2N6689 2N6251 JAN2N6251 JANS2N6251 JANTX2N6251 JANTXV2N6251 2N6675 2N6690 2N6546 2N6676 2N6691 JAN2N6546 JANTX2N6546 JANTXV2N6546 2N6677 2N6692


    OCR Scan     		PDF NPN-20 jan2n6251

    2N5076

    Abstract: TO61 package 2N5004 JANTXV 2n5349 2N5006 2N5008 2N5288 2N5317 2N5319 2N6128
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR ISOLATED COLLECTOR NPN TO-61 V c eo Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS NPN TO-61 2N5006 2N5008 2N5288 2N5317 2N5319 2N6128 2N6689 2N6690 2N6691A 2N6692 2N6693A 80 80 100 80 100 80 300 400 300 350 400 10 10 10 10


    OCR Scan     		PDF 2N5006 2N5008 2N5288 2N5317 2N5319 2N6128 2N6689 2N6690 2N6691A 2N6692 2N5076 TO61 package 2N5004 JANTXV 2n5349

    2N5048

    Abstract: 2N4301 2N5049 2N5218 2N5313 2N5315 2N5387 2N5388 2N5542 2N5959
    Text: ^4 ^TRANSISTOR CO DE J a ñ M ñ 3 S E INC D D O O I E 11] S 84D 00129 D10DETRdf\l515T0R TO., INC. 201 686-0400 • Telex: 139-335 • Outside N Y & NJ area call T O LL FREE 600-526-4581 FAX No. 201-575-5863 NPNTO-61 Type# PHP Com ple­ ment VCEOfSUS) (Volte)


    OCR Scan     		PDF NPNTO-61 2N4301 2N5048 2N5049 2N5313 2N5008 2N5288 2N5289 2N5317 2N5319 2N5048 2N4301 2N5049 2N5218 2N5313 2N5315 2N5387 2N5388 2N5542 2N5959

    10J2

    Abstract: 2N6563 3f05 sf 1012 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813
    Text: NEW ENGLAND SEMICOND UCT OR INIPIM T O - 6 1 PNP Comple­ ment VCEO SUS (V) 0000053 [ See page 13 for isolated collector versions Case 805 Type No. S^E D VCE (SAT) @ IC/lB ( V @ A/A) VBE @ IC/VCE (V @ Art) VBE (SAT) @ IC/lB STÛ • NES I(max) = 5 to 2 0 A


    OCR Scan     		PDF 0-300V 2N1724 2N1724A 2N1725 2N6588 2N6589 2N6590 2N6689 2N6690 2N6691 10J2 2N6563 3f05 sf 1012 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813

    wic 5020

    Abstract: 2N5289 2N4301 2N5048 2N5049 2N5218 2N5313 2N5315 2N5387 2N5388
    Text: ^4 ^TRANSISTOR CO DE J a ñ M ñ 3 S E D D O O I E 11] S INC 84D 00129 D10DETRdf\l515T0R TO., INC. 201 686-0400 • Telex: 139-335 • Outside NY & NJ area call TOLL FREE 600-526-4581 FAX No. 201-575-5863 NPNTO-61 Type# PNP C o m p le­ m en t VCEOfSUS)


    OCR Scan     		PDF NPNTO-61 2N4301 2N5048 2N5049 2N5313 2N5008 2N5288 2N5289 2N5317 2N5319 wic 5020 2N5289 2N4301 2N5048 2N5049 2N5218 2N5313 2N5315 2N5387 2N5388

    2N1724

    Abstract: 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487 2N3488 2N3489
    Text: General Transistor Corporation CASE le m a x TO-61 ss 5 to 20A V c e o (s u s ) = 4 0 -3 0 0 V NPN Power Transistors Typ. NO. VCEO («•) M 1C (mu) (A) hFE C/VCE |n lH U l & A/Y) 2N1724 2N1724A 2N1725 2N2611 80 120 80 50 5 5 5 10 20-90 @2/15 30-90 @2/15


    OCR Scan     		PDF 0-300V 2N1724 2N1724A 2N1725 2N2811 2N2812 2N6590 2N6689 2N6690 2N6691 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487 2N3488 2N3489

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    GSTU4040

    Abstract: 2n6547 jantx
    Text: \ Ic = 2 .0 A M P S DEVICE TYPE 2N4300 2N4863 2N4864 2N5148 ^N S150 VOLTS B^cbo/ BVcev VOLTS ^EBO VOLTS @100°C WATTS Min. Mix 80 120 120 80 80 100 140 140 100 100 8.0 8.0 8.0 6.0 6.0 15.0 4.0 16.0 40.0 4.0 3 0 -1 2 0 5 0 -1 5 0 5 0 -1 5 0 3 0 - 90 7 0 -2 0 0


    OCR Scan     		PDF 2N4300 2N4863 2N4864 2N5148 2N3418 2N3419 2N3420 2N3421 2N3506 2N3507 GSTU4040 2n6547 jantx

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le max ss TO-61 5 to 20A Vceo(sus) = 40-300V NPN Power Transistors VBE(SAT) 0IC/1B (V & A/V) ICEV0VCE (mA V) PO® TC = 25*C (W.M) Wt>®VCE I I I wc (A ®V) Ir (MHz) ton & W B (ju ® A/A) tOFF @IC/1B (p»®AfA) 1 @ 21.2


    OCR Scan     		PDF 0-300V 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2B14 2N3487 2N3488

    2N2613

    Abstract: No abstract text available
    Text: GENERAL SEMICONDUCTOR 3918590 GENERAL ^5 SEM ICONDUCTO R » F J h TIÛSTD □□OSOcî 4 1 95D 02094 D T le = 1 0 T ' 3 3 -/-? A M P S Ib AMPS It MHz Iceo/ IcEV pAMP 5.0 5.0 5.0 5.0 10.0 0.5 0.5 0.5 0.5 1.0 15 15 15 15 20 0.1 0.1 0.1 0.1 0.1 60 60 60 60 60


    OCR Scan     		PDF 9NIH31IMS 2N2613

    equivalent for transistor tt 2222

    Abstract: wn 537 a transistor wn 537 transistor 2N6669 2N6690 2N6674 2N6675 2N6689 D105 ic SL 1626
    Text: M I l - S - l 9 5 0 0 /5 3 7 U S A F ?.9. O c t o b e r I9 60 M ILITA R Y S P EC IFIC A T IO N SEM IC ONDUCTOR D E V I C E . T R A N S I S T O R , N P N , S I L I C O N , POWER T Y P E S 2 N 6 6 7 4 , 2 N 6 6 7 5 , 2 N 6 6 8 9 , AND ZN6690 J A N , J A N T X , AND J A N T X V


    OCR Scan     		PDF MIL-S-19500/537 2N6674, 2N6675, 2N6689, 2N6690 MIL-S-19500. ZH6674, N6675 T0-61) equivalent for transistor tt 2222 wn 537 a transistor wn 537 transistor 2N6669 2N6674 2N6675 2N6689 D105 ic SL 1626

    2N5077

    Abstract: 2N5076 2N5348 2N5288 2N5317 2N5006 2N5008 2N5319 2N6128 2N5347
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR ISOLATED COLLECTOR NPN TO-61 sus VOLTS Ic (max) AMPS V c eo PACKAGE DEVICE TYPE V Vc e (min/max @ A/V) ^FE@ V CE(jat) @ Ic^B (V @ A/A) p * r D fx WATTS (MHz) NPN 2N5006 80 10 30-90@5/5 1.5@10/1 67 30 TO-61 2N5008 80 10


    OCR Scan     		PDF 2N5006 2N5008 2N5288 2N5317 2N5319 2N6128 2N6689 2N6690 2N6691A 2N6692 2N5077 2N5076 2N5348 2N5347

    2N5302 EB

    Abstract: 2N1463 2n4271
    Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 D O D O D ^ fi ■ General Transistor Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3


    OCR Scan     		PDF SaD01 2N37S9 2N3790 2N3792 2N4398 2N4399 2N4902 2N4903 2N4904 2N4905 2N5302 EB 2N1463 2n4271

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR STE D • bSbMTTa 0000053 [ Case 805 Type No. 2N1724 2N1724A PNP Comple­ ment VCE SAT @ IC/lB ( V @ A/A) VBE (SAT) @ IC/lB (v VBE @ IC/VCE (V @ A/V) * N E S I(max) = 5 to 2 0 A V ceo(sus) = 4 0 -3 0 0 V fT = 1 to 4 0 MHz NPN TO-61


    OCR Scan     		PDF 2N1724 2N1724A 2N6689 N6690 2N6691 2N6692 2N6693

    2N2692

    Abstract: 2n3718 Maa 325 2N6378 2N1495 2N5055 2N5143 2N5867 2N5872 2N6563
    Text: G E N E R A L T R A N S I S T O R CO R P 24E D • 3^SaD01 D O D O D ^ fi ■ G eneral T ran sisto r Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905


    OCR Scan     		PDF 2N37B9 2N3713 2N3790 2N3714 2N3791 2N3715 2N6589 2N6590 2N6689 2N6690 2N2692 2n3718 Maa 325 2N6378 2N1495 2N5055 2N5143 2N5867 2N5872 2N6563