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    2N6756 Price and Stock

    Microchip Technology Inc 2N6756

    MOSFET N-CH 100V 14A TO204AA
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    Microchip Technology Inc JAN2N6756

    MOSFET N-CH 100V 14A TO204AA
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    Microchip Technology Inc JANTX2N6756

    MOSFET N-CH 100V 14A TO204AA
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    Microchip Technology Inc JANTXV2N6756

    MOSFET N-CH 100V 14A TO204AA
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    Keysight Technologies N6756A

    Modular Power Supplies High-Performance Autoranging DC Power Module 60V, 17A, 500W, double-wide
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    Mouser Electronics N6756A 2
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    2N6756 Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N6756 Fairchild Semiconductor TRANS MOSFET N-CH 100V 14A 2TO-204AA Original PDF
    2N6756 Fairchild Semiconductor 14A, 100V, 0.180 Ohm, N-Channel Power MOSFET Original PDF
    2N6756 International Rectifier HEXFET TRANSISTORS Original PDF
    2N6756 Microsemi FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V TO-3 Original PDF
    2N6756 Fairchild Semiconductor N-Channel Power MOSFETs, 14 A, 60 A/100 V Scan PDF
    2N6756 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. Scan PDF
    2N6756 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    2N6756 International Rectifier TO-39 / TO-3 N-Channel HEXFET Power MOSFETs Scan PDF
    2N6756 IXYS High Voltage Power MOSFETs Scan PDF
    2N6756 IXYS High Voltage Power MOSFETs Scan PDF
    2N6756 Motorola Switchmode Datasheet Scan PDF
    2N6756 Motorola European Master Selection Guide 1986 Scan PDF
    2N6756 Motorola Power Transistor Selection Guide Scan PDF
    2N6756 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    2N6756 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N6756 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6756 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6756 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6756 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6756 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N6756 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DD 127 D TRANSISTOR

    Abstract: transistor DD 127 D 2N6758 JANTXV 2N6758 2N6762 JANTX 2N6762 2N6760 JANTX 121465 2n6760
    Text: 2N6756, 2N6758, 2N6760 and 2N6762 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/542 DESCRIPTION This family of 2N6756, 2N6758, 2N6760 and 2N6762 switching transistors are military qualified up to the JANTXV level for high-reliability applications. Microsemi also offers


    Original     		PDF 2N6756, 2N6758, 2N6760 2N6762 MIL-PRF-19500/542 2N6762 DD 127 D TRANSISTOR transistor DD 127 D 2N6758 JANTXV 2N6758 2N6762 JANTX 2N6760 JANTX 121465

    2N6756

    Abstract: TB334
    Text: 2N6756 Data Sheet March 1999 14A, 100V, 0.180 Ohm, N-Channel Power MOSFET • 14A, 100V • rDS ON = 0.180Ω Ordering Information • Majority Carrier Device 2N6756 PACKAGE TO-204AA 1586.2 Features The 2N6756 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications


    Original     		PDF 2N6756 2N6756 O-204AA TB334

    2N6756

    Abstract: TB334
    Text: 2N6756 Data Sheet December 2001 14A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features The 2N6756 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching convertors, motor


    Original     		PDF 2N6756 2N6756 O-204AA TB334

    rds 17-15

    Abstract: TRANSISTOR to 204aa 2N6756 2N6756 JAN 100858 T4-LDS-0111
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DEVICES LEVELS 2N6756 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


    Original     		PDF MIL-PRF-19500/542 2N6756 O-204AA) T4-LDS-0111 rds 17-15 TRANSISTOR to 204aa 2N6756 2N6756 JAN 100858

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DEVICES LEVELS 2N6756 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


    Original     		PDF MIL-PRF-19500/542 2N6756 O-204AA) T4-LDS-0111

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    2N6756

    Abstract: 2N6755 F102 ISQ0020F
    Text: DE I 3 4 t.Ttz.V4 DD2771G Q ~ f A4 3469674 FAIRCHILD SEMICONDUCTOR 84 D 2 7790 2N6755/2N6756 T - 3 ? - / / N-Channel Power MOSFETs, 14 A, 60 V/100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-2Q4AA These devices are n-channel, enhancement mode, power


    OCR Scan     		PDF 34hcib7M 2N6755/2N6756 2N67S6 2N6755 clb74 E77T4 T-39-11 2N6756 F102 ISQ0020F

    2N6756 JAN

    Abstract: 2N6755
    Text: POWER MOSFET TRANSISTORS , ,TX JTXVIñl?!! J, JTX, JTXV 2N6756 100 Volt, 0.18 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.


    OCR Scan     		PDF 2N6756 MIL-S-19500/542A contro17) 2N6755 2N6756 JAN

    MTP20N10

    Abstract: 1RF531
    Text: NATL N-Channel Power MOSFETs Continued 2N67S5 2N6756 IRF130 IRF132 IRF133 IRF530 S 1-6 IRF532 IRF533 MTP20N10 2N6757 IRF230 IRF231 lD @ TC = 25 'C (A) •rD Tc = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-2Û4AA (42) TO-204AA


    OCR Scan     		PDF 2N67S5 2N6756 IRF130 IRF131 IRF132 IRF133 IRF530 1RF531 IRF532 IRF533 MTP20N10

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    jfet selector guide

    Abstract: T0-220SM
    Text: SEMELAB pic Type_No 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 2N6659 2N6659-LCC4 2N6659-SM 2N6660 2N6660-LCC4 2N6660-SM 2N6661 2N6661-220M 2N6661-LCC4 2N6661SM 2N6755 2N6756 2N6757 2N6758 2N6759 2N6760 2N6761 2N6762 2N6763


    OCR Scan     		PDF 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 jfet selector guide T0-220SM

    1N6801

    Abstract: 2N6767 2n6800 2N6755 2N6756 2N6757 2N6758 2N6759 2N676 2N6761
    Text: - 248 - f ft * t Vds or M € tt € i Vdg V 2N6755 IR N 60 2N6756 N 100 IR 2N6757 IR N 150 2N6758 N 200 IR 2N6759 IR N 350 2N6Ï6Û N 400 IR 2N6761 N 450 IR 2N6762 N 500 IR 2K6763 IR N 60 2N6764 IR N 100 2N6765 IR N 150 2N6766 IR N 200 2N6767 IR N 350 2N6768


    OCR Scan     		PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 O-205AF 2N6798 1N6801 2N6767 2n6800 2N6759 2N676 2N6761

    2N6155

    Abstract: 2n6156 2N6755 2N6756 dioda
    Text: 3875081 G E^SOLID S TATE 01 DE 1 3 0 7 5 0 0 1 0010304 T | D ' T-39-11 Standard Power MOSFETs 2N6755, 2N6756 File Number 1586 Power MOS Field-Effect Transistors * N-Channel Enhancement-Mode


    OCR Scan     		PDF 3fi750fll t-39- 2N6755, 2N6756 0V-100V 2N6755 2N6756 3fi75Clfll 2N6155 2n6156 dioda

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6756 Designer's D a ta Sheet 14 AMPERE N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR N-CHANNEL TMOS POWER FET These TM O S P ow er FETs are designed fo r lo w vo ltag e , high speed p o w e r sw itch in g a pp licatio n s such as sw itch in g regulators,


    OCR Scan     		PDF 2N6756 2N6756 19500/542A

    1N7001

    Abstract: 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90
    Text: - 248 - f M € tt € ft * V 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 IR IR IR IR


    OCR Scan     		PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6659 O-205AF 1N7001 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90

    2N7003

    Abstract: 2N7009 2N7011 2N7073 G50-12C1 2N6755 2N6756 2N6757 2N6758 2N6759
    Text: - 248 M - € 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 f- +• */!/ * tt € f f t * £ ÍS T a = 2 5 '0


    OCR Scan     		PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 O-254AA 2N7003 2N7009 2N7011 2N7073 G50-12C1 2N6759

    2N6155

    Abstract: 2N67 2N6756 2N6156 D-05N md-141 2N6755
    Text: Standard Power MOSFETs 2N6755, 2N6756 File Number 1586 Power MOS Field-Effect Transistors N-Channel Enhancernent-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 12A and 14A, 60V -100V rDs on = 0.18 fi and 0.25 fl Features: • SO A is p o w e r-d is s ip a tio n lim ite d


    OCR Scan     		PDF 2N6755, 2N6756 0V-100V 2N6755 2N6756 150cC 2N6155 2N67 2N6156 D-05N md-141

    2N6756

    Abstract: No abstract text available
    Text: MOTOROLA SC 14E D I b3b?aSM Q D Öl bic c. 1 " _r - 3 7W y XSTRS/R F MOTOROLA • I SEM ICONDUCTOR TECHNICAL DATA 2N6756 14 AMPERE N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR N-CHANNEL TMOS POWER FET These TM O S Power FETs are designed for low voltage, high


    OCR Scan     		PDF 2N6756 2N6756 19500/542A

    TO-254

    Abstract: T0-204 IRF450 equivalent
    Text: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS


    OCR Scan     		PDF 2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768 2N6770 2N6788 2N6790 TO-254 T0-204 IRF450 equivalent

    MTM40N20

    Abstract: MTM8N18 MTM45N12 MTM45N15 MTM40N18 IRF233 MTM8N10 MTM20N10 IRF240 IRF252
    Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 V b R(DSS) (Volts) Min (Ohms) Max (Amp) 200 0.18 10 0.16 7.5 0.12 16 Pd <“•Tc = 25°C (Wans) Max IRF240 • 18 125 M TM 15N 20 • 15


    OCR Scan     		PDF O-204AA IRF240 MTM15N20 IRF252Â IRF250Â MTM40N20 MTM5N18 MTM5P18* MTM7N18 MTM8P18* MTM8N18 MTM45N12 MTM45N15 MTM40N18 IRF233 MTM8N10 MTM20N10 IRF240 IRF252

    2n6152

    Abstract: 1N7000 2N61B 2N676 2N6757 1N7001 2N5184 2N6164 2n6800 IXTP4N90
    Text: - 248 M - € tt f ft t Vd s or € i * £ Vg s ÍS Ta=25'0 * /CH Vd g as. 1GSS Pd Id V g s th 1DSS max * /CH ft % 4# fe (13=2 5 * 0 Id (on) Vd s = Vg s Ciss Coss Crss ft & m n V g s =0 (*typ) (max) (pF) (max) *typ (0) *typ (A) Id (A) Vg s (V) *typ (S) Id


    OCR Scan     		PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6791 O-205AF 2N6792 2n6152 1N7000 2N61B 2N676 1N7001 2N5184 2N6164 2n6800 IXTP4N90

    lts 542

    Abstract: LTS 543 2n6800 LTS 542 INTERNAL DIAGRAM 2N6756 2N6790 LH0063 QPL-19500 TRANSISTOR C 557 B
    Text: Standard Power MOSFETs 2N6790 File N u m be r 1900 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 3.5 A, 200V N-CHANNEL ENHANCEMENT MODE TDSIonl = 0 . 8 0 Features: • a ■ ■ m SOA is power-dissipation limited Nanosecond switching speeds


    OCR Scan     		PDF 2N6790 92cs-3374i 2N6790 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF lts 542 LTS 543 LTS 542 INTERNAL DIAGRAM 2N6756 LH0063 QPL-19500 TRANSISTOR C 557 B

    QPL-19500

    Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
    Text: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits


    OCR Scan     		PDF 2N6903 2N6903 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ QPL-19500 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760

    1N7001

    Abstract: 1N7000 8SS89 4900 SIEMENS 2N6155 2N6823 2N6826 BUZ11 BUZ211 IXTP4N90
    Text: - M. A %¿ £ tt t Vd s or * Vd g h V € £ të (Ta=25^C) Vg s (V) Ig s s Pd Id * /CH * /CH (A) (W) % 1 CnA) V g s th) Id s s Vg s (V) (m a Vd s (V) ) min max (V) (V) Vd s = Vg s Id (mA) Ö-) '14 F Ds(on) b(on) gfs Ciss Coss Crss <*typ) (max) (pF) (*typ)


    OCR Scan     		PDF XTP4N80 O-220 IXTP4N80A IXTP4N90 T0-204AA 2N6659 O-205AF 2N6660 1N7001 1N7000 8SS89 4900 SIEMENS 2N6155 2N6823 2N6826 BUZ11 BUZ211