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    Renesas Electronics Corporation 2N6757

    POWER FIELD-EFFECT TRANSISTOR, 8A I(D), 150V, 0.6OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-204AA - Bulk (Alt: 2N6757)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2N6757 Bulk 4 Weeks 1
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    Harris Semiconductor 2N6757

    8A, 150V, 0.6ohm, N-Channel, POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2N6757 65 1
    • 1 $2.91
    • 10 $2.91
    • 100 $2.73
    • 1000 $2.47
    • 10000 $2.47
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    2N6757 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6757 Fairchild Semiconductor N-Channel Power MOSFETs, 9A, 150V/200V Scan PDF
    2N6757 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. Scan PDF
    2N6757 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    2N6757 IXYS High Voltage Power MOSFETs Scan PDF
    2N6757 IXYS High Voltage Power MOSFETs Scan PDF
    2N6757 Motorola European Master Selection Guide 1986 Scan PDF
    2N6757 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N6757 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6757 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6757 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6757 Unknown FET Data Book Scan PDF
    2N6757 National Semiconductor N-Channel Power MOSFETs Scan PDF
    2N6757 Semelab MOS Transistors Scan PDF

    2N6757 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6757

    Abstract: 12a650
    Text: 2N6757 MECHANICAL DATA Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE TRANSISTOR 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675)


    Original     		PDF 2N6757 O-204AA) 2N6757 12a650

    2N3772 motorola

    Abstract: 2N6257 200iC MJ3771 MOTOROLA MJ3771 W630 MJ3772 2N3771 2N3772 lj377
    Text: ~,:$, ,-L: ;-: — —— ;:’,: L-,:r$’z ,~J&._ ,!:, c’ Select from Epi5ase : ~: :-; :; ,: and~or ~,;:. Unibase for ultimate circuit EPIBASEA- Designed forpowerarnplifier .; Low Collector-Emitter VCE ~at) ICBO (single diffused) anl~ switching Voltage


    Original     		PDF lJ3771 10Adc M305300 MSO61OO 2N3771, 2N3772, 2N6257 MJ3771 48w-2 MJ6257 2N3772 motorola 2N6257 200iC MJ3771 MOTOROLA MJ3771 W630 MJ3772 2N3771 2N3772 lj377

    2N6758

    Abstract: 2n677 2N67 2N6756 2N6757 30saa zn675
    Text: Standard Power MOSFETs 2N6757, 2N6758 File Number 1587 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 8A and 9A, 1 5 0 V -2 0 0 V rDs on = 0.4 Q and 0.6 O Features: • SOA is pow er-dissipation lim ited


    OCR Scan     		PDF 2N6757, 2N6758 50V-200V 2N6757 2N6758 ZN6758 2n677 2N67 2N6756 30saa zn675

    MTP20N10

    Abstract: 1RF531
    Text: NATL N-Channel Power MOSFETs Continued 2N67S5 2N6756 IRF130 IRF132 IRF133 IRF530 S 1-6 IRF532 IRF533 MTP20N10 2N6757 IRF230 IRF231 lD @ TC = 25 'C (A) •rD Tc = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-2Û4AA (42) TO-204AA


    OCR Scan     		PDF 2N67S5 2N6756 IRF130 IRF131 IRF132 IRF133 IRF530 1RF531 IRF532 IRF533 MTP20N10

    2N6758

    Abstract: UPS RELAY CIRCUIT 2N6757 DDE7715
    Text: 64 d F J 3 Li b cît.74 3469674 FAIRCHILD SEMICONDUCTOR «h 0 D 57 7T S 1 84D 27795 2N6757/2N6758 N-Channel Power MOSFETs, 9 A, 150 V/200 V F A IR C H IL D A Schlumberger Company Power And Discrete Division T-39-11 TO-2Q4AA Description These devices are n-channel, enhancement mode, power


    OCR Scan     		PDF DDE7715 2N6757/2N6758 T-39-11 2N6758 2N675 UPS RELAY CIRCUIT 2N6757

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    1SV50

    Abstract: 2N6151 2N67 2N6757 2N6758
    Text: 3875081 G E SOL ID STATE 01 î î f | 3a?SG fll 001ö3öfl b ¥_ 1 T-39-11 Standard Power MÔSFËTs 2N6757, 2N6758 F ile N u m b e r 1587 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CH A NN E L EN HA N C E M E N T MODE


    OCR Scan     		PDF T-39-11 2N6757, 2N6758 2N6757 2N6758 2N6751 50UACET0 T-39-11 1SV50 2N6151 2N67

    jfet selector guide

    Abstract: T0-220SM
    Text: SEMELAB pic Type_No 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 2N6659 2N6659-LCC4 2N6659-SM 2N6660 2N6660-LCC4 2N6660-SM 2N6661 2N6661-220M 2N6661-LCC4 2N6661SM 2N6755 2N6756 2N6757 2N6758 2N6759 2N6760 2N6761 2N6762 2N6763


    OCR Scan     		PDF 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 jfet selector guide T0-220SM

    sy 710 diode

    Abstract: IC 6757 diode sy 710 2N6758 2N6757
    Text: POWER MOSFET TRANSISTORS , JTX 200 Volt, 0.4 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability • Qualified to M IL-S-19500/542A 2N6757 J' JTX' JTXV 2N6758 DESCRIPTION


    OCR Scan     		PDF 2N6757 2N6758 IL-S-19500/542A 2N6757 sy 710 diode IC 6757 diode sy 710 2N6758

    1N6801

    Abstract: 2N6767 2n6800 2N6755 2N6756 2N6757 2N6758 2N6759 2N676 2N6761
    Text: - 248 - f ft * t Vds or M € tt € i Vdg V 2N6755 IR N 60 2N6756 N 100 IR 2N6757 IR N 150 2N6758 N 200 IR 2N6759 IR N 350 2N6Ï6Û N 400 IR 2N6761 N 450 IR 2N6762 N 500 IR 2K6763 IR N 60 2N6764 IR N 100 2N6765 IR N 150 2N6766 IR N 200 2N6767 IR N 350 2N6768


    OCR Scan     		PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 O-205AF 2N6798 1N6801 2N6767 2n6800 2N6759 2N676 2N6761

    T0220H

    Abstract: 2N6795 2N3824 2N3824LP 2N4391 2N4393 2N4416 2N6659 T018 T046
    Text: MAE D • Ö1331Ö7 00004bS 110 ■ SMLB SEMELABL SEMELAB LTD T-ir.ot MOS TRANSISTORS Type Rei 2N3824 HR 2N3824LP HR 2N4391 EEQ 2N4392 REQ 2N4393 EEQ 2N4416 REQ 2N6659 HR 2N6660 HR 2N6661 HR 2N6661-220H-■ISO HR 2N6755 REQ 2H6756 REQ REQ 2N6757 REQ 2N6758


    OCR Scan     		PDF 2N3824 2N3824LP 2N4391 2H4392 2N4393 2N4416 2N6659 2N6660 2N6661 2N6661-220H- T0220H 2N6795 T018 T046

    Untitled

    Abstract: No abstract text available
    Text: NATL This N-Channel Power MOSFETs Continued 2N6755 IRF130 IRF131 IRF132 By IRF133 Its IRF530 (71 IRF532 2N6757 2N6758 IRF230 IRF231 TC = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-220 (37) TO-220 (37)


    OCR Scan     		PDF hSD113D T-39-01

    1N7001

    Abstract: 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90
    Text: - 248 - f M € tt € ft * V 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 IR IR IR IR


    OCR Scan     		PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6659 O-205AF 1N7001 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90

    2N7003

    Abstract: 2N7009 2N7011 2N7073 G50-12C1 2N6755 2N6756 2N6757 2N6758 2N6759
    Text: - 248 M - € 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 f- +• */!/ * tt € f f t * £ ÍS T a = 2 5 '0


    OCR Scan     		PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 O-254AA 2N7003 2N7009 2N7011 2N7073 G50-12C1 2N6759

    MTM40N20

    Abstract: MTM8N18 MTM45N12 MTM45N15 MTM40N18 IRF233 MTM8N10 MTM20N10 IRF240 IRF252
    Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 V b R(DSS) (Volts) Min (Ohms) Max (Amp) 200 0.18 10 0.16 7.5 0.12 16 Pd <“•Tc = 25°C (Wans) Max IRF240 • 18 125 M TM 15N 20 • 15


    OCR Scan     		PDF O-204AA IRF240 MTM15N20 IRF252Â IRF250Â MTM40N20 MTM5N18 MTM5P18* MTM7N18 MTM8P18* MTM8N18 MTM45N12 MTM45N15 MTM40N18 IRF233 MTM8N10 MTM20N10 IRF240 IRF252

    2n6152

    Abstract: 1N7000 2N61B 2N676 2N6757 1N7001 2N5184 2N6164 2n6800 IXTP4N90
    Text: - 248 M - € tt f ft t Vd s or € i * £ Vg s ÍS Ta=25'0 * /CH Vd g as. 1GSS Pd Id V g s th 1DSS max * /CH ft % 4# fe (13=2 5 * 0 Id (on) Vd s = Vg s Ciss Coss Crss ft & m n V g s =0 (*typ) (max) (pF) (max) *typ (0) *typ (A) Id (A) Vg s (V) *typ (S) Id


    OCR Scan     		PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6791 O-205AF 2N6792 2n6152 1N7000 2N61B 2N676 1N7001 2N5184 2N6164 2n6800 IXTP4N90

    1N7001

    Abstract: 1N7000 8SS89 4900 SIEMENS 2N6155 2N6823 2N6826 BUZ11 BUZ211 IXTP4N90
    Text: - M. A %¿ £ tt t Vd s or * Vd g h V € £ të (Ta=25^C) Vg s (V) Ig s s Pd Id * /CH * /CH (A) (W) % 1 CnA) V g s th) Id s s Vg s (V) (m a Vd s (V) ) min max (V) (V) Vd s = Vg s Id (mA) Ö-) '14 F Ds(on) b(on) gfs Ciss Coss Crss <*typ) (max) (pF) (*typ)


    OCR Scan     		PDF XTP4N80 O-220 IXTP4N80A IXTP4N90 T0-204AA 2N6659 O-205AF 2N6660 1N7001 1N7000 8SS89 4900 SIEMENS 2N6155 2N6823 2N6826 BUZ11 BUZ211

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 4302 27 1 0 D 5 3 71 Ö , j j h a r r Ifl? • HAS i s 2 N 6 7 5 7 2 N 6 7 5 8 N -C h a n n e l E n h an cem en t-M o d e Pow er F ie ld -E ffe c t Transistors August 1991 Features Package T O -2 0 4 A A BOTTOM VIEW • 8A and 9 A, 1 5 0V - 2 0 0 V • rDS on = 0 .4 fi and 0 .6 ft


    OCR Scan     		PDF 2N6757 2N6758 2N6757,

    Untitled

    Abstract: No abstract text available
    Text: 3 7E SEMELAB LT » D • 0133107 DD0D2Û5 JAN O 5 1988 2 N 6757 2N 6758 MOS POWER N-Channel Enhancement Mode Dimensions in mm 4-1.6 APPLICATIONS 1 39.5 203 • SWITCHING REGULATORS i • CONVERTERS • MOTOR DRIVERS 9.0 -* 12.0 PIN 1 - Gate TO 3 Thin PIN 2 -S o u rc e


    OCR Scan     		PDF 2N67S8

    IRF250a

    Abstract: MTH8P20 MTM20N10 MTM45N15 MTP2P45 IRF240 IRF250 IRF252 MTM12N18 MTM15N20
    Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 V b R(DSS) (Volts) Min (Ohms) Max (Amp) 200 0.18 10 0.16 7.5 0.12 16 Pd <“•T c = 25°C (Wans) Max IRF240 • 18 125 M TM 15N 20 • 15


    OCR Scan     		PDF O-204AA IRF240 MTM15N20 IRF252Â IRF250Â MTM40N20 MTM5N18 MTM5P18* MTM7N18 MTM8P18* IRF250a MTH8P20 MTM20N10 MTM45N15 MTP2P45 IRF240 IRF250 IRF252 MTM12N18 MTM15N20

    2N6758

    Abstract: 6757
    Text: UNITRODE CORP 9347963 t UNITRODE CORP ~~~ 92D POWER MOSFET TRANSISTORS 2 0 0 V o lt, 0 .4 o o i c mt , s 1 04 96 D j ; j t x , j t x v 2N6758 T - ' b l - i i O h m N -C h a n n e l " DESCRIPTION The Unltrode power MOSFET design utilizes the most advanced technology available.


    OCR Scan     		PDF 2N6758 1L-S-19500/542A 2N6758 6757

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit