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Vishay Siliconix 2N6793 POWER FIELD-EFFECT TRANSISTOR, 1.5A I(D), N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
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2N6793 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2N6793		International Rectifier	TO-39 Package N-Channel HEXFET		Scan	PDF
2N6793		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF
2N6793		Unknown	FET Data Book		Scan	PDF
2N6793		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF
2N6793		Semelab	MOS Transistors		Scan	PDF

2N6793 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Diode 400V 5A Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM	Original	2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN	PDF
2N6793 Abstract: No abstract text available Text: POWER MOSFET TRANSISTORS 2N6793 500 Volt, 3.0 Ohm N-Channel FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roscom and a high transconductance.	OCR Scan	2N6793 2N6794 2N6793	PDF
2n6152 Abstract: 1N7000 2N61B 2N676 2N6757 1N7001 2N5184 2N6164 2n6800 IXTP4N90 Text: - 248 M - € tt f ft t Vd s or € i * £ Vg s ÍS Ta=25'0 * /CH Vd g as. 1GSS Pd Id V g s th 1DSS max * /CH ft % 4# fe (13=2 5 * 0 Id (on) Vd s = Vg s Ciss Coss Crss ft & m n V g s =0 (typ) (max) (pF) (max) typ (0) typ (A) Id (A) Vg s (V) typ (S) Id	OCR Scan	2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6791 O-205AF 2N6792 2n6152 1N7000 2N61B 2N676 1N7001 2N5184 2N6164 2n6800 IXTP4N90	PDF
2N5158 Abstract: 2N5159 2N5184 2n6152 2N6164 CDBCB450KCAY70 2N6757 2N6758 2N676 2N6762 Text: - ; £ H £ }± Vd s or € * Vd g % V Vg s m (ÌR=2bV) ID fiJ sé Id s : Fd Vg s th) Ciss I d (oíi ) Vd s = Coss Crss /CH * /CH (A) (Vf) (max) (nA) Vg s (V) ( M A) (max) m ax Vd s (V) (V) (V) # B til % V g s -O Vg s (V) Id ♦typ (mA) (0) Vg s (V) ♦typ	OCR Scan	2N6757 O-204AA 2N6758 2N675S 2N6791 O-205AF 2N6792 2N6793 2N5158 2N5159 2N5184 2n6152 2N6164 CDBCB450KCAY70 2N676 2N6762	PDF
2N6794 Abstract: No abstract text available Text: SEMELAB LTD 37E D • Û1331Ô7 GOODBll fl J AN 0 5 1988 <y\ 1 SEMELAB 2N 6793 2N 6794 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm I 1 ìi APPLICATIONS T • FAST SWITCHING 8.5 max. 1 • MOTOR CONTROLS k - 5 .H • POWER SUPPLIES	OCR Scan	2N6793 2N6794 2N6794	PDF
IRF5402 Abstract: IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342 Text: MilitaryAerospace Division M ilitary-Aerospace Division ceram ic surface m ount devices and scree ned to m e e t th e m ost severe T 0 2 2 0 c e r a m ic su rface m o u n t devices A surface m o u n t r e p l a c e m e n t for th e p op ular T 0 2 2 0 M e t a l and T 0 2 5 7 package, the T 0 2 2 0 S M	OCR Scan	BZX55C5V6CSM T0220SM 2N2222CSM 2N2907CSM BCW33CSM BZX55C7V5CSM 2N2369ACSM 2N3209CSM 3250C BCY59CSM IRF5402 IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342	PDF
9358 Abstract: 2n6797 2N6781 2N6787 2N6795 IRFF111 IRFF113 IRFF121 IRFF123 IRFF130 Text: XOR HERMETIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER 2bE D IN TERNATI ONAL RECTIFIER • 4ÔS54S2 OOIOSST □ ■ TO-39 Package T-39-Û3 N-CHANNEL Types Iq cont max 0.18 0.18 0.25 0.3 0.3 0.4 0.6 0.6 0.8 TC - 25°C A 8.0 8.0 7.0 6.0 6.0 5.0 3.5 3.5 3.0 'DM	OCR Scan	T-39-Ã IRFF131 2N6795 IRFF133 IRFF121 2N6787 IRFF123 IRFF111 2N6781 IRFF113 9358 2n6797 2N6781 2N6795 IRFF111 IRFF113 IRFF121 IRFF123 IRFF130	PDF
jfet selector guide Abstract: T0-220SM Text: SEMELAB pic Type_No 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 2N6659 2N6659-LCC4 2N6659-SM 2N6660 2N6660-LCC4 2N6660-SM 2N6661 2N6661-220M 2N6661-LCC4 2N6661SM 2N6755 2N6756 2N6757 2N6758 2N6759 2N6760 2N6761 2N6762 2N6763	OCR Scan	2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 jfet selector guide T0-220SM	PDF
2n6152 Abstract: 2N5159 2N5184 2N6164 2N6755 2N6756 2N6757 2N6758 2N6759 2N676 Text: - 248 M - € tt f f t t Vd s or € i * £ Vg s ÍS T a= 2 5 '0 * /CH Vd g a s. 1 GSS Pd Id Vg s t h 1 DSS max * /CH ft % 4# fe (13=250 I d (o n ) Vd s = Vg s C iss Coss C rss (typ) (max) (pF) (typ) (max) (pF) (typ) (max) (pF) ft & m n Vg s =0 (max)	OCR Scan	2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6791 O-205AF 2N6792 2n6152 2N5159 2N5184 2N6164 2N6759 2N676	PDF
T0220H Abstract: 2N6795 2N3824 2N3824LP 2N4391 2N4393 2N4416 2N6659 T018 T046 Text: MAE D • Ö1331Ö7 00004bS 110 ■ SMLB SEMELABL SEMELAB LTD T-ir.ot MOS TRANSISTORS Type Rei 2N3824 HR 2N3824LP HR 2N4391 EEQ 2N4392 REQ 2N4393 EEQ 2N4416 REQ 2N6659 HR 2N6660 HR 2N6661 HR 2N6661-220H-■ISO HR 2N6755 REQ 2H6756 REQ REQ 2N6757 REQ 2N6758	OCR Scan	2N3824 2N3824LP 2N4391 2H4392 2N4393 2N4416 2N6659 2N6660 2N6661 2N6661-220H- T0220H 2N6795 T018 T046	PDF
UFN540 Abstract: UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450 Text: N-CHANNEL POWER MOSFETS Vm ft»* «» Dram On-State Source •Resist ance Voltage Volts (Shuns) PRODUCT SELECTION GUIDE Is Continuous Drain Current :. . 1°« . Pulsed: . ÉwMiv Current Part ■ ‘lifcrtr: Numbers j : Càsja; (Amps) : Vos Drain. On-State	OCR Scan	U2TA506 U2TA508 U2TA510 861-6S40 UFN540 UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450	PDF
10561-D Abstract: cib47 Text: UNITRODE CORP 9347963 UNITRODE T5 CORP DlT\| =1347^3 DQlGShG 92D POWER MOSFET. TRANSISTORS 500 Volt, 3.0 Ohm N-Channel FEATURES • Fast Sw itching • Low Drive Current • Ease of P a ra llelin g • N o Second B reakdow n • Excellent T em p e ra tu re Stability	OCR Scan	2N6794 2N6796 10561-D cib47	PDF