Untitled
Abstract: No abstract text available
Text: 2N7278H3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)4 I(DM) Max. (A) Pulsed I(D)2 @Temp (øC)100 IDM Max (@25øC Amb)12 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)-55
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2N7278H3
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Untitled
Abstract: No abstract text available
Text: 2N7278H2 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)4 I(DM) Max. (A) Pulsed I(D)2 @Temp (øC)100 IDM Max (@25øC Amb)12 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)-55
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2N7278H2
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Untitled
Abstract: No abstract text available
Text: 2N7278H4 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)4 I(DM) Max. (A) Pulsed I(D)2 @Temp (øC)100 IDM Max (@25øC Amb)12 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)-55
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2N7278H4
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Untitled
Abstract: No abstract text available
Text: 2N7278H1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)4 I(DM) Max. (A) Pulsed I(D)2 @Temp (øC)100 IDM Max (@25øC Amb)12 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)-55
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2N7278H1
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Untitled
Abstract: No abstract text available
Text: 2N7278H Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)4 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)
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2N7278H
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1E14
Abstract: 2E12 2N7278D 2N7278H 2N7278R FRL234 Rad hard MOSFETS in Harris
Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL234 D, R, H 2N7278D, 2N7278R 2N7278H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 4A, 250V, RDS(on) = 0.700Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts
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FRL234
2N7278D,
2N7278R
2N7278H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
1E14
2E12
2N7278D
2N7278H
2N7278R
Rad hard MOSFETS in Harris
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Untitled
Abstract: No abstract text available
Text: 2N7278R4 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)4 I(DM) Max. (A) Pulsed I(D)2 @Temp (øC)100 IDM Max (@25øC Amb)12 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)-55
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2N7278R4
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FRL-230
Abstract: 2N7272 2N7281 2N7275 2N7278 frl130,
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 November 2004. MIL-PRF-19500/604B 30 July 2004 SUPERSEDING MIL-PRF-19500/604A 21 June 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
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MIL-PRF-19500/604B
MIL-PRF-19500/604A
2N7272,
2N7275,
2N7278,
2N7281,
MIL-PRF-19500.
FRL-230
2N7272
2N7281
2N7275
2N7278
frl130,
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Untitled
Abstract: No abstract text available
Text: HA RR IS S E M I C O N D SE CT OR 3Q H SfiE D A R R IS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL234 D, R, H • M 3 Q E 27 1 D O M S b T H ÖTT H H A S ZN/Z7ÖU, 2N7278H 2N7278H Radiation Hardened N-Channel Power MOSFETs December 1992
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FRL234
2N7278H
2N7278H
100KRAD
300KRAD
1000KRAD
3000KRAD
430B571
2N7278D,
2N7278R,
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Untitled
Abstract: No abstract text available
Text: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL234 D, R, H November 1994 2N7278D, 2N7278R 2N7278H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 4A, 250V, RDS(on) = 0.700ft TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts
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FRL234
2N7278D,
2N7278R
2N7278H
700ft
100KRAD
300KRAD
1000KRAD
3000KRAD
35MeV/
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRL234 0, R, H 2N7278D, 2N7278R 2N7278H Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 4A, 250V, RDS(on) = 0.7000 T0-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts
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FRL234
2N7278D,
2N7278R
2N7278H
T0-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
FL234UIS
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Untitled
Abstract: No abstract text available
Text: HARRIS SEniCOND SECTOR SbE ]> • 43Q2271 00422'*! lbT H H A S Radiation Hardness Assurance Program N-C H AN N EL RAD HARD PO W ER MO SFETS INITIAL RATINGS Id s rDS ON 126X182 3 FRM230D 126X182 3 100 14 0.18 2 -4 200 8 0.50 2 -4 FRM234D 126X182 3 250 7 0.70
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43Q2271
126X182
FRM230D
FRM234D
FRM430D
FRL130D
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Untitled
Abstract: No abstract text available
Text: Pre-Post Radiation Characteristics N-Channel P O S T 10K R A D O R P O S T 100K R A D SI R A T IN G S b (A) R DS(ON) V g S(TH) B V q ss PART NUM BER (£1) 100 2N7271 204AA 14 0.180 R A T ED 200 250 500 P O S T 1M R A D (SI) R A T IN G S F*d s (OM) V GS(TH)
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204AA
205AF
257AA
204AE
254AA
258AA
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2N7289
Abstract: 2N7308 2N7331
Text: Tactical and Strategic Level Selections Radiation Hardened MOSFETs N-Channei TO-3 TO-39 TO-257 TO-254 TO-258 INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL FRM130D FRM130R FRM130H 2N7271 FRL130D FRL130R FRL130H 2N7272 . . FRS130D FRS130R
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FRM130D
FRM130R
FRM130H
FRM230D
FRM230R
FRM230H
FRM234D
FRM234R
FRM234H
FRM430D
2N7289
2N7308
2N7331
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