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    2ND GENERATION OF 1200V IGBT MODULES Search Results

    2ND GENERATION OF 1200V IGBT MODULES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    MG250YD2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    2ND GENERATION OF 1200V IGBT MODULES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FS50R12KT3

    Abstract: Infineon technology roadmap for IGBT infineon power cycling Infineon IGBT2 cycling FS50R12KT4 Semiconductor Group igbt Eoff-FS100R12KE3 Gate Turn-off Thyristor 600V 20A igbt simulation 62mm-Modul
    Text: Higher Junction Temperature in Power Modules – a demand from hybrid cars, a potential for the next step increase in power density for various Variable Speed Drives Dr. Reinhold Bayerer, Infineon Technologies AG, Max-Planck-Str. 5, Warstein, Germany Abstract


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Advantages of NPC Inverter Topologies with Power Modules July 2009, Michael Frisch, Vincotech GmbH, Biberger Str. 93, 82008 Unterhaching Germany Temesi Ernö, Vincotech Kft., Kossuth Lajos u. 59, H-2060 Bicske (Hungary) Efficiency is becoming increasingly important in power electronics. In many applications are running


    Original     		PDF H-2060 720kVA 900kVA 1080kVA

    mosfet base induction heat circuit

    Abstract: mitsubishi electric igbt module mitsubishi induction traction motor IGBT module FZ IGBT parallel igbt for HIGH POWER induction heating Igbt base induction heat circuit ieee 1000 POWEREX igbtmod igbtmod mitsubishi
    Text: The Latest Advances in Industrial IGBT Module Technology Eric R. Motto John F. Donlon Application Engineering Powerex Inc. Youngwood PA, USA Application Engineering Powerex Inc. Youngwood PA, USA Abstract— More than ten years have elapsed since IGBT modules


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Advantages of NPC Inverter Topologies with Power Modules Michael Frisch, Vincotech GmbH, Biberger Str. 93, 82008 Unterhaching Germany Temesi Ernö, Vincotech Kft., Kossuth Lajos u. 59, H-2060 Bicske (Hungary) Efficiency is becoming increasingly important in power electronics. Many applications are driven by the


    Original     		PDF H-2060 1080kVA

    FZ1600R12KF4

    Abstract: IGBT FZ 800 75GD120DN2 100GB170DN2 IGBT FZ 1200r16kf4 igbt driver BSM10GD60DLC FZ800R12KL4C igbt 1600V 20A eupec igbt BSM 100 gb
    Text: power . Home Products IGBT 600V the News 1200V Contact Job Offers Company Search Site Content 1600V/1700V 2500V/3300V Sixpack Power Integrated Modules In Editorials future Low Loss. Half-Bridge Packages 50A BSM 50GB60DLC 75A BSM 75GB60DLC 100A BSM 100GB60DLC


    Original     		PDF 600V/1700V 500V/3300V 50GB60DLC 75GB60DLC 100GB60DLC 150GB60DLC 200GB60DLC 300GB60DLC FZ1600R12KF4 IGBT FZ 800 75GD120DN2 100GB170DN2 IGBT FZ 1200r16kf4 igbt driver BSM10GD60DLC FZ800R12KL4C igbt 1600V 20A eupec igbt BSM 100 gb

    heatsink catalogue

    Abstract: FS450R12KE3 3rd Generation of 1200V IGBT Modules FS300R12KE3 Econo PIM The internal structure module IGBT FS300R12KE3 FS150R12KE3G half bridge converter 2kw High Voltage Busbar inverter techniques
    Text: EconoPACK+ A new IGBT module for optimized inverter solutions M. Münzer, M.Hornkamp eupec GmbH & Co.KG, Warstein 08.2000 So called EconoPACK and EconoPIM modules with solderable pin terminals have changed the structure of inverters in application up to 20kW. Above 100 kW IHM modules have set a new


    Original     		PDF

    POWEREX DIP-IPM

    Abstract: PS22056 DIP-IPM SCHEMATIC POWER SUPPLY WITH IGBTS IPM module IEC664-1 PS22052 Mitsubishi Electric IGBT MODULES ipm first igbtmod mitsubishi
    Text: A 1200V Transfer Molded DIP-IPM Eric Motto*, John Donlon*, Mitsutaka Iwasaki*,Kazuhiro Kuriaki*, Hiroshi Yoshida*, Kazunari Hatade* * Power Device Division, Mitsubishi Electric Corp. Fukuoka Japan *Powerex Incorporated, Youngwood, PA USA I. INTRODUCTION


    Original     		PDF 380-460VAC POWEREX DIP-IPM PS22056 DIP-IPM SCHEMATIC POWER SUPPLY WITH IGBTS IPM module IEC664-1 PS22052 Mitsubishi Electric IGBT MODULES ipm first igbtmod mitsubishi

    FZ1200r16KF4

    Abstract: siemens igbt IGBT FZ1200 IGBT Power Module siemens ag eupec fz1200 FZ1200R16 FZ1200R17KF6 driver igbt SIEMENS 7400A SCHEMATIC POWER SUPPLY WITH IGBTS
    Text: Technical Improvements in 1700V High Power Modules with Rated Currents up to 2400A“ * O. Schilling, F. Auerbach , R. Spanke, M. Hierholzer eupec GmbH, Max Planck Str. 1, D-59581 Warstein-Belecke * Siemens AG, Semiconductor-PS, Balanstraße 73, D-81541 Munich


    Original     		PDF D-59581 D-81541 FZ1200r16KF4 siemens igbt IGBT FZ1200 IGBT Power Module siemens ag eupec fz1200 FZ1200R16 FZ1200R17KF6 driver igbt SIEMENS 7400A SCHEMATIC POWER SUPPLY WITH IGBTS

    failure analysis IGBT

    Abstract: The field stop IGBT FS IGBT infineon igbt 1200v 600A IGBT parallel power cycling eupec module igbt igbt 1200v 150a stop PCIM 176 igbt failure 1718VG "The field stop IGBT FS IGBT"
    Text: REPETITIVE SHORT CIRCUIT BEHAVIOUR OF TRENCH-/FIELD-STOP IGBTS B. Gutsmann1, P. Kanschat1, M. Münzer1, M. Pfaffenlehner2, T. Laska2 1 eupec GmbH, Max-Planck-Straße 5, D 59581 Warstein, Germany Infineon-Technologies AG, Balanstraße 59, D-81541 Munich, Germany


    Original     		PDF D-81541 failure analysis IGBT The field stop IGBT FS IGBT infineon igbt 1200v 600A IGBT parallel power cycling eupec module igbt igbt 1200v 150a stop PCIM 176 igbt failure 1718VG "The field stop IGBT FS IGBT"

    MINI DIP-IPM

    Abstract: POWEREX DIP-IPM simple conection igbt 1200V 20A igbt 20A 1200v tpm 02 DIP-IPM igbt 600v, dual CS 20A RoHS
    Text: Latest Advances in Transfer Molded Package Technology J. F. Donlon, E. R. Motto Powerex Incorporated, Youngwood, Pennsylvania, USA www.pwrx.com IAS 2006 Transfer Molded Package Technology Past Present Future IAS 2006 Al wire FWDi, IGBT 2nd Mold resin IC Au wire


    Original     		PDF O-220 MINI DIP-IPM POWEREX DIP-IPM simple conection igbt 1200V 20A igbt 20A 1200v tpm 02 DIP-IPM igbt 600v, dual CS 20A RoHS

    mitsubishi PS21867-P

    Abstract: PS21864-P 230d6 PS21562-P PS21865-P ps21069 3.7KW motor PS21563-SP PS21564-P PS21563-P
    Text: 2.10 3rd Generation DIP and Mini-DIP-IPM Dual-in-line Package Intelligent Power Modules Features: • Employing 5th generation planar IGBT chips with 0.6µm design rule or CSTBT technology with superior loss performance • Ultra compact dual or single-in-line transfer mold package


    Original     		PDF 2500Vrms mitsubishi PS21867-P PS21864-P 230d6 PS21562-P PS21865-P ps21069 3.7KW motor PS21563-SP PS21564-P PS21563-P

    SCS205KG

    Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
    Text: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.


    Original     		PDF 000A-class) 56P6733E 1500SG SCS205KG SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ

    FZ1200R33KF2C

    Abstract: igbt 3.3kv planar busbar design HIGH VOLTAGE DIODE 3.3kv FZ1500R33HE3 FZ1500R33HL3 the calculation of the power dissipation for the IGBT i300a IGBT FZ1200 BUSBAR calculation
    Text: High Power IGBT modules with improved mechanical performance and advanced 3.3kV IGBT3 chip technology Th. Schütze1 , J. Biermann1), R. Spanke 1), M. Pfaffenlehner2) 1 2 Infineon Technologies AG, Max-Planck-Straße, D-59581 Warstein, Germany Infineon Technologies AG, Am Campeon 1 - 12, D-85579 Neubiberg, Germany


    Original     		PDF D-59581 D-85579 06K/kW FZ1500R33HE3 FZ1500R33HL3 FZ1200R33KF2C FZ1500R33HE3 FZ1200R33KF2C igbt 3.3kv planar busbar design HIGH VOLTAGE DIODE 3.3kv FZ1500R33HL3 the calculation of the power dissipation for the IGBT i300a IGBT FZ1200 BUSBAR calculation

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FF400R12KL4C   IGBT,Wechselrichter/IGBT,Inverter


    Original     		PDF FF400R12KL4C

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ1600R12KL4C   IGBT,Wechselrichter/IGBT,Inverter


    Original     		PDF FZ1600R12KL4C

    wechselrichter

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FF400R12KL4C   IGBT,Wechselrichter/IGBT,Inverter


    Original     		PDF FF400R12KL4C 1200VIGBTModulmitlowlossIGBTder2 wechselrichter

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FF800R12KL4C   IGBT,Wechselrichter/IGBT,Inverter


    Original     		PDF FF800R12KL4C

    MJ15050

    Abstract: FZ800R12KL4C
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ800R12KL4C   IGBT,Wechselrichter/IGBT,Inverter


    Original     		PDF FZ800R12KL4C 1200VIGBTModulmitlowlossIGBTder2 MJ15050 FZ800R12KL4C

    FZ1200R12KL4C

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FZ1200R12KL4C   IGBT,Wechselrichter/IGBT,Inverter


    Original     		PDF FZ1200R12KL4C FZ1200R12KL4C

    Untitled

    Abstract: No abstract text available
    Text: Power Module with Additional Low Inductive Current Path Michael Frisch, Vincotech GmbH, Biberger Str. 93, 82008 Unterhaching Germany Temesi Ernö, Vincotech Kft., Kossuth Lajos u. 59, H-2060 Bicske (Hungary) 1 Abstract Parasitic inductances are a major problem with power modules, in particular in fast switching


    Original     		PDF H-2060

    Untitled

    Abstract: No abstract text available
    Text: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules FF400R12KL4C  


    Original     		PDF FF400R12KL4C 1200VIGBTModulmitlowlossIGBTder2

    MG75J2YS40

    Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45
    Text: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		PDF 2-109C1A MG50J6ES50 MG75J6ES50 2-94A2A MG100J6ES50 MG50Q6ES11 MIG150J201H MIG200J201H MIG75Q201H MIG100Q201H MG75J2YS40 MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45

    GT250101

    Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
    Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		PDF 2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9

    Mitsubishi IPM module

    Abstract: MITSUBISHI IPM PM50RHA060 PM150RLA060 igbt dc to dc chopper control circuit of single phase photovoltaic inverter PM150CLA120 PM50B4LB060 PM50rh PM75B4LA060
    Text: Changes for the B etter A MITSUBISHI ELECTRIC Power Devices 5th Generation IPM L-Series/IPM for Photovoltaic generation Realization of Low loss through use of a 5th generation trench chip CSTBT and low noise through a newly developed control IC 5th Generation IPM


    OCR Scan     		PDF PM50CLA060 PM75CLA060 PM100CLA060 PM150CLA060 PM200CLA060 PM300CLA060 PM450CLA060 PM600CLA060 PM50CLB060 PM75CLB060 Mitsubishi IPM module MITSUBISHI IPM PM50RHA060 PM150RLA060 igbt dc to dc chopper control circuit of single phase photovoltaic inverter PM150CLA120 PM50B4LB060 PM50rh PM75B4LA060