A1930
Abstract: transistor a1930 2SA1930 2SA1930 2sc5171 toshiba A1930 transistor 2SA1930
Text: 2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SC5171 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics
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2SA1930
2SC5171
SC-67
2-10R1A
A1930
transistor a1930
2SA1930
2SA1930 2sc5171
toshiba A1930
transistor 2SA1930
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A1930
Abstract: transistor a1930 2SA1930 2sa1930 transistor equivalent toshiba A1930 2SA1930 2sc5171 2SC5171
Text: 2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SC5171 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics
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2SA1930
2SC5171
SC-67
2-10R1A
A1930
transistor a1930
2SA1930
2sa1930 transistor equivalent
toshiba A1930
2SA1930 2sc5171
2SC5171
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c5171
Abstract: transistor c5171 2SC5171 2sa1930 transistor equivalent 2SA1930 2sc5171 2SC5171 transistor equivalent 2SA1930
Text: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SA1930 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics
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2SC5171
2SA1930
2-10R1A
c5171
transistor c5171
2SC5171
2sa1930 transistor equivalent
2SA1930 2sc5171
2SC5171 transistor equivalent
2SA1930
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2sc5171
Abstract: No abstract text available
Text: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SA1930 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics
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2SC5171
2SA1930
2-10R1A
2sc5171
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transistor c5171
Abstract: c5171 2sc5171
Text: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SA1930 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics
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2SC5171
2SA1930
2-10R1A
transistor c5171
c5171
2sc5171
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A1930
Abstract: 2SA1930 2sc5171 2sa1930 2SC5171
Text: 2SA1930 東芝トランジスタ シリコンPNPエピタキシャル形 2SA1930 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジション周波数が高い。fT = 200 MHz 標準 • 2SC5171 とコンプリメンタリになります。
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2SA1930
2SC5171
SC-67
2-10R1A
20070701-JA
A1930
2SA1930 2sc5171
2sa1930
2SC5171
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2SC4793 2sa1837
Abstract: 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303
Text: Part Number 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC3421 2SA1358 2SC2983 2SA1225 2SC4793 2SA1837 2SC5171 2SA1930 2SC5196 2SA1939 2SC5197 2SA1940 2SC5198 2SA1941 2SD2386 2SB1557 2SD2387 2SB1558 2SD2636 2SB1682 2SC4688
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2SC1627A
2SA817A
2SC2235
2SA965
2SC3665
2SA1425
2SC5174
2SA1932
2SC3423
2SA1360
2SC4793 2sa1837
100 amp npn darlington power transistors
2sC5200, 2SA1943
10 amp npn darlington power transistors
2sC5200, 2SA1943, 2sc5198
2SC4684 datasheets
2sa1930 transistor equivalent
2sc5200
2SB906-Y
2sc3303
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transistor c5171
Abstract: C5171 2SC5171 transistor equivalent 2sa1930 transistor equivalent 2SA1930 2sc5171 2SC5171 2SA1930 2sc517
Text: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SA1930 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics
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2SC5171
2SA1930
2-10R1A
transistor c5171
C5171
2SC5171 transistor equivalent
2sa1930 transistor equivalent
2SA1930 2sc5171
2SC5171
2SA1930
2sc517
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Untitled
Abstract: No abstract text available
Text: , Line. J.E.IIS.U C7 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SA1930 Silicon PNP Power Transistor DESCRIPTION • High Transition Frenquency : fr=200MHz(Typ.) • Complementary to 2SC5171
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2SA1930
200MHz
2SC5171
O-220F
-10mA
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c5171
Abstract: 2SC5171 2SA1930 2sc5171 2-10R1A 2SA1930
Text: 2SC5171 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5171 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジション周波数が高い。fT = 200 MHz 標準 • 2SA1930 とコンプリメンタリになります。
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Original
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2SC5171
2SA1930
SC-67
2-10R1A
20070701-JA
c5171
2SC5171
2SA1930 2sc5171
2-10R1A
2SA1930
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2SC4793 2sa1837
Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
Text: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y
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2SA2058
2SA1160
2SC2500
2SA1430
2SC3670
2SA1314
2SC2982
2SC5755
2SA2066
2SC5785
2SC4793 2sa1837
2sC5200, 2SA1943, 2sc5198
2sC5200, 2SA1943
transistor
2SA2060
power transistor npn to-220
2sc5198 equivalent
transistor 2SC5359
2SC5171 transistor equivalent
NPN Transistor
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2sc5088 horizontal transistors
Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.
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BCE0016A
3501C-0109
F-93561,
2sc5088 horizontal transistors
equivalent 2SC2655
2sc5858
2sC5200, 2SA1943
2sa1930 transistor equivalent
2SA1941 equivalent
2sc5570
zener diode SMD marking code 27 4F
2sc5200 audio amplifiers
smd transistor h2a
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smd transistor h2a
Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output
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BCE0016C
E-28831
BCE0016D
smd transistor h2a
SMD TRANSISTOR H2A NPN
transistor smd H2A
2sa1943 amplifier circuit diagram
TPCP8L01
2sC5200, 2SA1943
H2A transistor SMD
2sc5200 power amplifiers diagram
MARKING SMD PNP TRANSISTOR h2a
SMD H2A
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2SA1930
Abstract: 2SC5171 VQE 11E 2SA19 transistor 2SA1930
Text: 2SA1930 TOSHIBA 2 S A 1 930 TO S H IB A TRANSISTOR POWER AM PLIFIER APPLICATIO NS SILICON PNP E PITAX IAL TYPE Unit in mm DRIVER STAGE AM PLIFIER APPLICATIO NS 10 ±0.3 -5 y < High Transition Frequency : fp = 200 MHz Typ. Complementary to 2SC5171 o
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OCR Scan
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2SA1930
2SC5171
2SA1930
2SC5171
VQE 11E
2SA19
transistor 2SA1930
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2SA1930 2sc5171
Abstract: 2SA1930 2SC5171
Text: TO SH IBA 2SA1930 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S A 1 930 POWER AMPLIFIER APPLICATIONS Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS High Transition Frequency : fp = 200 MHz Typ. • Complementary to 2SC5171 ± 0.2 ÍY^ o 2.7±Q 2 of 3.9
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OCR Scan
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2SA1930
2SC5171
2SA1930 2sc5171
2SA1930
2SC5171
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PDF
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2SA1930 2sc5171
Abstract: transistor 2sc5171 2SC5171 2SA1930
Text: TOSHIBA 2SC5171 2 S C 5 1 71 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS r • • High Transition Frequency : fp = 200MHz Typ. Complementary to 2SA1930 M A X IM U M RATINGS (Ta = 25°C)
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OCR Scan
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2SC5171
200MHz
2SA1930
2-10R1A
2SA1930 2sc5171
transistor 2sc5171
2SC5171
2SA1930
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SA1930 T O SH IB A 2 S A 1 930 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS 10 ± 0 .3 • • High Transition Frequency : Pp = 200MHz Typ. Complementary to 2SC5171 MAXIMUM RATINGS (Ta = 25°C)
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OCR Scan
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2SA1930
200MHz
2SC5171
2-10R1A
-180V
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SC5171 T O SH IB A TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE 2 S C 5 1 71 Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS 10 ± 0 .3 • • High Transition Frequency : Pp = 200MHz Typ. Complementary to 2SA1930 MAXIMUM RATINGS (Ta = 25°C)
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OCR Scan
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2SC5171
200MHz
2SA1930
2-10R1A
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PDF
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2sa1930
Abstract: 2SA1930 2sc5171 2SC5171
Text: TOSHIBA 2SA1930 2 S A 1 930 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS r • • High Transition Frequency : fp = 200MHz Typ. Complementary to 2SC5171 2 '^ "<v>0 o M A X IM U M RATINGS (Ta = 25°C)
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OCR Scan
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2SA1930
200MHz
2SC5171
2-10R1A
-180V
2sa1930
2SA1930 2sc5171
2SC5171
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PDF
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2-10R1A
Abstract: No abstract text available
Text: 2SA1930 SILICON PNP EPITAXIAL TYPE Unit in mm PO W ER AM PLIFIER APPLICATIONS. DRIVER STAGE AM PLIFIER APPLICATIONS. • • ¿3 2 t O Z illl? W - High Transition Frequency : fx = 200MHz Typ. Complementary to 2SC5171 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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OCR Scan
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2SA1930
200MHz
2SC5171
2-10R1A
-160V,
--10mA,
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5171 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 1 <;r s 1 7 1 MT WÊÊÊF •M ■ Unit in mm POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS • • 10 + 0.3 , f 3.2 ± 0 . 2 2.7±02 High Transition Frequency : fr = 200MHz Typ.
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OCR Scan
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2SC5171
200MHz
2SA1930
2-10R1A
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PDF
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2SA1930 2sc5171
Abstract: 2SC5171 2SA1930
Text: TO SH IBA 2SC5171 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE 2 S C 5 1 71 Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS 10 ±0.3 r • • 1.1 cn ro o 1.1 UNIT 0.75 ±0.15 V 2.54 ± 0.25 2.54±0.25 V V A 1 2 3 ic A :B 1. BASE
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OCR Scan
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2SC5171
200MHz
2SA1930
2-10R1A
--180V,
2SA1930 2sc5171
2SC5171
2SA1930
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2sC5200, 2SA1943, 2sc5198
Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428
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OCR Scan
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2SA817A
2SA940
2SA949
2SA965
2SA966
2SA1012
2SA1013
2SA1020
2SA1145
2SA1160
2sC5200, 2SA1943, 2sc5198
GTI5Q101
2sc5039
2SC4532
2SD2088
2SC3303
2sC5200, 2SA1943
2SA1803
2sc4408
GT10G102
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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OCR Scan
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2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
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