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    2SB1015 Search Results

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    2SB1015 Price and Stock

    Toshiba America Electronic Components 2SB1015

    TRANSISTOR,BJT,PNP,60V V(BR)CEO,3A I(C),TO-220VAR
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    Quest Components 2SB1015 2
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    ComSIT USA 2SB1015 47
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    Toshiba America Electronic Components 2SB1015-Y(ND)

    2SB1015 - TRANSISTOR (SILICON)
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    Rochester Electronics 2SB1015-Y(ND) 99,852 1
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    • 1000 $0.4132
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    2SB1015 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1015 Various Russian Datasheets Transistor Original PDF
    2SB1015 Unknown Scan PDF
    2SB1015 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1015 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1015 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1015 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1015 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1015 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1015 Unknown Cross Reference Datasheet Scan PDF
    2SB1015 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB1015 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB1015 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB1015 Toshiba TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) Scan PDF
    2SB1015 Toshiba TO-220 Package Transistors Scan PDF
    2SB1015A Toshiba PNP transistor Original PDF
    2SB1015(A) Unknown Silicon PNP Transistor Scan PDF
    2SB1015A Toshiba Silicon PNP triple diffused type transistor for audio frequency amplifier applications Scan PDF
    2SB1015A Toshiba TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Scan PDF
    2SB1015-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1015-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SB1015 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB1015

    Abstract: 2sB1015 y 2SD1406
    Text: Inchange Semiconductor Product Specification 2SB1015 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Collector power dissipation :PC=25W@TC=25℃ ・Low collector saturation voltage ・Complement to type 2SD1406 APPLICATIONS ・For audio frequency power amplifier


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    2SB1015 O-220Fa 2SD1406 2SB1015 2sB1015 y 2SD1406 PDF

    2SB1015

    Abstract: 2SD1406
    Text: SavantIC Semiconductor Product Specification 2SB1015 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25 ·Low collector saturation voltage ·Complement to type 2SD1406 APPLICATIONS ·For audio frequency power amplifier


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    2SB1015 O-220Fa 2SD1406 2SB1015 2SD1406 PDF

    2SD1406

    Abstract: 2SB1015 RL15A
    Text: SavantIC Semiconductor Product Specification 2SD1406 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25 ·Low collector saturation voltage ·Complement to type 2SB1015 · APPLICATIONS ·For audio frequency power


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    2SD1406 O-220Fa 2SB1015 O-220Fa) 2SD1406 2SB1015 RL15A PDF

    B1015A

    Abstract: B1015 2SB1015A
    Text: 2SB1015A TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A Audio Frequency Power Amplifier Applications Unit: mm • Low collector saturation voltage: VCE sat = −1.7 V (max) (IC = −3 A, IB = −0.3 A) • Collector power dissipation: PC = 25 W (Tc = 25°C)


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    2SB1015A B1015A B1015 2SB1015A PDF

    B1015A

    Abstract: 2SB1015A B1015
    Text: 2SB1015A 東芝トランジスタ シリコンPNP三重拡散形 2SB1015A ○ 低周波電力増幅用 単位: mm • 飽和電圧が低い。 • コレクタ損失が大きい。 : PC = 25 W Tc = 25°C : VCE (sat) = −1.7 V (最大) (IC = −3 A, IB = −0.3 A)


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    2SB1015A SC-67 2-10R1A B1015A 2SB1015A B1015 PDF

    2sb1015

    Abstract: transistor 2sb1015 2SD1406 transistor 2sd1406
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1015 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -1.7 V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1406 APPLICATIONS ·Designed for audio frequency power amplifier applications.


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    2SB1015 2SD1406 2sb1015 transistor 2sb1015 2SD1406 transistor 2sd1406 PDF

    2SD1406

    Abstract: 2SB1015 25WTc
    Text: Inchange Semiconductor Product Specification 2SD1406 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25℃ ·Low collector saturation voltage ·Complement to type 2SB1015 APPLICATIONS ·For audio frequency power


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    2SD1406 O-220Fa 2SB1015 O-220Fa) 2SD1406 2SB1015 25WTc PDF

    2SB1015A

    Abstract: No abstract text available
    Text: 2SB1015A TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A Audio Frequency Power Amplifier Applications Unit: mm • Low collector saturation voltage: VCE sat = −1.7 V (max) (IC = −3 A, IB = −0.3 A) · Collector power dissipation: PC = 25 W (Tc = 25°C)


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    2SB1015A 2SB1015A PDF

    2SB1015

    Abstract: 2SD1406
    Text: JMnic Product Specification 2SB1015 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Collector power dissipation :PC=25W@TC=25℃ ・Low collector saturation voltage ・Complement to type 2SD1406 APPLICATIONS ・For audio frequency power amplifier


    Original
    2SB1015 O-220Fa 2SD1406 2SB1015 2SD1406 PDF

    B1015A

    Abstract: 2SB1015A
    Text: 2SB1015A TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A Audio Frequency Power Amplifier Applications Unit: mm • Low collector saturation voltage: VCE sat = −1.7 V (max) (IC = −3 A, IB = −0.3 A) • Collector power dissipation: PC = 25 W (Tc = 25°C)


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    2SB1015A B1015A 2SB1015A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1015 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)140 I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2SB1015 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    2SB1015

    Abstract: IC 4025
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1015 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 10.3MAX. FEATURES: . Low Collector Saturation Voltage = VcE sat =-1.7V(Max.) at IC=-3A, IB=-0.3A . Collector Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SD1406


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    2SB1015 2SD1406 -50mA, 2SB1015 IC 4025 PDF

    9y transistor

    Abstract: No abstract text available
    Text: TOSHIBA 2SB1015A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 0 1 5A AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS U nit in mm 10 ± 0.3 M m? T,nw r i n ll p n tn r Si» t u r a fi n n V n l t n erp ' \jlli = _ 1- m 7' V’ Í M 9 Y Ì' ^3.2 ± Q.2


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    2SB1015A 9y transistor PDF

    2SB1015

    Abstract: 2SD1406 2SB1015-O 2sB101
    Text: V U = ¡> P N P = n íÉ ñ M 2SB1015 2SB1015 : mm 10.3MAX. lâfnsrtTi'i&v'o : V C E (sat) = —1.7V (Ic = —3A, Ib = - 0 .3 A ) : P q = 25W (Tc = 25°C) 2SD1406 t 3 > -/ ') ¿ y i' ') hz * 19 t -te (Ta = 25°C) HO •¡n v-vi 3 l'i' sû y ^ - ; | i l ï


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    2SB1015 2SB1015) 2SD1406 2-10L1A f1152^ 2SB1015 2SB1015-O 2sB101 PDF

    2SB1015A

    Abstract: No abstract text available
    Text: T O S H IB A 2SB1015A T O SH IBA TRANSISTO R SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 0 1 5A Unit in mm A U D IO FREQUENCY PO W ER AM PLIFIER APPLICATIO NS • • Low Collector Saturation Voltage : v CE sat = -1 .7 V (Max.) dC = - 3 A, IB = -0 .3 A) : pc = 25 W (Tc = 25°C)


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    2SB1015A 2SB1015A PDF

    2SD1405

    Abstract: 2SA1304 2SA1305 2SA1306 2SA1306A 2SA1306B 2SC3296 2SC3297 2SC3298 2SC3298A
    Text: — 3 O n 8 TO-220 (T S ) P A CK A G E S E R IE S IE M CD l> W H (X) n ✓0 m Application * MAX. A tr 'c Type n o . NPN T V Vertical Out PNP 2SC3298 2SA1306 Audio Drive 2SC3298A 2SA1306A Audio Drive 2SC3298B 2SA1306B General Purpose 2SC3297 2SA1305 2SB1015


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    O-220 2SC3296 2SA1304 2SC3298 2SA1306 2SC3298A 2SA1306A 2SC3298B 2SA1306B 2SC3297 2SD1405 2SA1304 2SA1305 2SA1306A 2SA1306B PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SB1015A T O SH IBA TRA NSISTO R SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 0 1 5A Unit in mm A U D IO FREQUENCY P O W ER A M PLIFIER APPLICATIO NS • • 10 ± 0 .3 Low Collector Saturation Voltage : VcE sat = -1 .7 V (Max.) dC = - 3 A, IB = -0 .3 A)


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    2SB1015A PDF

    2sb1015

    Abstract: No abstract text available
    Text: 2SB1015 SILICON PNP TRIPLE DIFFUSED TYPE U nit in mm A U D IO FREQUENCY PO W ER AM PLIFIER APPLICATIONS. • • • I í i ü i I a X. Low Collector Saturation Voltage : V cE sat = —1-VV(Max.) at I c = - 3 A , Ib = -0 .3 A Collector Power Dissipation : P q = 25W(T c = 25°C)


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    2SB1015 2SD1406 2-10L1A 20x/s 2sb1015 PDF

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


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    2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


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    O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346 PDF

    2SD1406

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1406 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm 1Û3M AX. FEATURES: 03.2±CX2 . High DC Current Gain : hFg=300 Max. (V^jj= 5V , 1^=0.5A) & idi « r-^1 +* . Low Saturation Voltage •• VCE(sat)=1.0V(Max.)(Ic=3A,


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    2SD1406 2SB1015 VCC-30V 2SD1406 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA íDI SC RE TE /O PT O} 9097250 TO SH IBA lib C D ISCRETE/OPTO * -3 t>U~üT9~¿Tr ' 2SD1406 DE I TDTTaSO □□□ 7141 S I 3 ^ — 0 «jf U SILICON NPN TRIPLE DIFFUSED TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm IQ 3MAX, FEATURES:


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    2SD1406 2SB1015 76-ai5 PDF

    2SB816

    Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
    Text: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3


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    2SA1253 2SB849 2SB775 2SA1264 2SB965 2SB1371 2SA1264 2SB1372 2SB816 2SA1265 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416 PDF