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    2SB101 Price and Stock

    Rochester Electronics LLC 2SB1013TP-3

    BIP PNP 2A 16V
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    DigiKey 2SB1013TP-3 Bulk 12,000 2,664
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    Panasonic Electronic Components 2SB1011

    TRANS PNP 400V 0.1A TO126B-A1
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    Amphenol Aerospace JT07RP-22-2SB(101)

    RECEPT
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    DigiKey JT07RP-22-2SB(101) Bulk 4
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    Amphenol Aerospace JT06RE-20-2SB(101)

    PLUG
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    Amphenol Aerospace JT00RE-22-2SB(101)

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    2SB101 Datasheets (139)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB101 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB101 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SB101 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB101 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB101 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB101 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB101 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB101 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB101 Unknown Cross Reference Datasheet Scan PDF
    2SB1010 Various Russian Datasheets Transistor Original PDF
    2SB1010 Unknown Scan PDF
    2SB1010 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1010 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1010 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1010 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1010 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1010 Unknown Cross Reference Datasheet Scan PDF
    2SB1010 ROHM Scan PDF
    2SB1010 ROHM TO-92L, TO-92LS, MRT Transistors Scan PDF
    2SB1010 ROHM TO-92, SPT Type Transistors Scan PDF
    ...

    2SB101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1015

    Abstract: 2sB1015 y 2SD1406
    Text: Inchange Semiconductor Product Specification 2SB1015 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Collector power dissipation :PC=25W@TC=25℃ ・Low collector saturation voltage ・Complement to type 2SD1406 APPLICATIONS ・For audio frequency power amplifier


    Original     		PDF 2SB1015 O-220Fa 2SD1406 2SB1015 2sB1015 y 2SD1406

    2SD1376

    Abstract: Darlington NPN Silicon Diode npn 100v 1.5a 2SB1012
    Text: Inchange Semiconductor Product Specification 2SD1376 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·DARLINGTON ·Complement to type 2SB1012 APPLICATIONS ·For low frequency power amplifier applications PINNING see Fig.2 PIN DESCRIPTION


    Original     		PDF 2SD1376 O-126 2SB1012 2SD1376 Darlington NPN Silicon Diode npn 100v 1.5a 2SB1012

    2SB1019

    Abstract: 2SD1412
    Text: JMnic Product Specification 2SB1019 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1412 APPLICATIONS ・High current switching applications ・Power amplifier applications PINNING PIN DESCRIPTION


    Original     		PDF 2SB1019 O-220Fa 2SD1412 O-220Fa) 2SB1019 2SD1412

    2SB1018

    Abstract: 2SD1411
    Text: JMnic Product Specification 2SB1018 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・High collector current ・Low collector saturation voltage ・Complement to type 2SD1411 APPLICATIONS ・Power amplifier applications ・High current switching applications


    Original     		PDF 2SB1018 O-220F 2SD1411 O-220F) 2SB1018 2SD1411

    2sb1018

    Abstract: 2SD1411 2sB101
    Text: Inchange Semiconductor Product Specification 2SB1018 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・High collector current ・Low collector saturation voltage ・Complement to type 2SD1411 APPLICATIONS ・Power amplifier applications


    Original     		PDF 2SB1018 O-220F 2SD1411 O-220F) 2sb1018 2SD1411 2sB101

    D1411A

    Abstract: 2SB1018A 2SD1411A
    Text: 2SD1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE sat = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SD1411A 2SB1018A D1411A 2SB1018A 2SD1411A

    B1018A

    Abstract: B1018 2SD1411A 2SB1018A
    Text: 2SB1018A 東芝トランジスタ シリコンPNP三重拡散形 PCT方式 2SB1018A 通 信 工 業 用 ○ 大電力スイッチング用 ○ 電力増幅用 単位: mm • 許容コレクタ電流が大きい。 : IC = − 7 A • コレクタ飽和電圧が低い。


    Original     		PDF 2SB1018A 2SD1411A 2-10R1A 20070701-JA B1018A B1018 2SD1411A 2SB1018A

    2SD1407

    Abstract: 2SB1016
    Text: 2SB1016 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ! Complement to 2SD1407 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC)


    Original     		PDF 2SB1016 SC-67 2SD1407 -150V 2SD1407 2SB1016

    2SB1015

    Abstract: 2SD1406
    Text: SavantIC Semiconductor Product Specification 2SB1015 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25 ·Low collector saturation voltage ·Complement to type 2SD1406 APPLICATIONS ·For audio frequency power amplifier


    Original     		PDF 2SB1015 O-220Fa 2SD1406 2SB1015 2SD1406

    2SB1016

    Abstract: 2SD1407 2SB-1016
    Text: SavantIC Semiconductor Product Specification 2SB1016 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High breakdown voltage ·Low collector saturation voltage ·Complement to type 2SD1407 APPLICATIONS ·Power amplifier applications PINNING


    Original     		PDF 2SB1016 O-220Fa 2SD1407 2SB1016 2SD1407 2SB-1016

    2SD1406

    Abstract: 2SB1015 RL15A
    Text: SavantIC Semiconductor Product Specification 2SD1406 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25 ·Low collector saturation voltage ·Complement to type 2SB1015 · APPLICATIONS ·For audio frequency power


    Original     		PDF 2SD1406 O-220Fa 2SB1015 O-220Fa) 2SD1406 2SB1015 RL15A

    2SB1018A

    Abstract: 2SD1411A
    Text: SavantIC Semiconductor Product Specification 2SB1018A Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·High collector current ·Low collector saturation voltage ·Complement to type 2SD1411A APPLICATIONS ·Power amplifier applications ·High current switching applications


    Original     		PDF 2SB1018A O-220F 2SD1411A O-220F) 2SB1018A 2SD1411A

    pnp 4A switching

    Abstract: 2SB1018 2SD1411
    Text: SavantIC Semiconductor Product Specification 2SB1018 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1411 APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING


    Original     		PDF 2SB1018 O-220Fa 2SD1411 O-220Fa) C100V; pnp 4A switching 2SB1018 2SD1411

    5v 25w ta amplifier

    Abstract: 2SB1017 2SB1018 2SD1408
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1017 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -1.7V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1408 APPLICATIONS ·Designed for power amplifier applications.


    Original     		PDF 2SB1017 2SD1408 5v 25w ta amplifier 2SB1017 2SB1018 2SD1408

    Hitachi DSA001650

    Abstract: No abstract text available
    Text: 2SB1012 K Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base 1 2 3 ID 5 kΩ (Typ) 1 kΩ (Typ) 1 2SB1012(K) Absolute Maximum Ratings (Ta = 25°C) Item


    Original     		PDF 2SB1012 2SD1376 O-126 D-85622 Hitachi DSA001650

    B1018a

    Abstract: b1018 2SB1018A 2SD1411A
    Text: 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SB1018A High Current Switching Applications Power Amplifier Applications Unit: mm • High collector current: IC = −7 A • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −4 A)


    Original     		PDF 2SB1018A 2SD1411A B1018a b1018 2SB1018A 2SD1411A

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SD1376 K Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1012(K) Outline 2SD1376(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage


    Original     		PDF 2SD1376 2SB1012 Hitachi DSA00279

    2SD1411

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1411 INDUSTRIAL APPLICATIONS Unit in n HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 0 3 .J± Q 2 FEAT U R E S : . Low Saturation Voltage : v CE sat = 0-5V(Max.) at Ic=4A . Complementary to 2SB1018 MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF 2SD1411 2SB1018 2SD1411

    Untitled

    Abstract: No abstract text available
    Text: 2SB1018 SILICON PNP EPITAXIAL PLANAR TYPE INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. PO W ER AMPLIFIER APPLICATIONS. • • • High Collector Current : I q = —7A Low Collector Saturation Voltage : v CE sat = -0.5V (M ax.) at Ic = -4 A


    OCR Scan     		PDF 2SB1018 2SD1411 2-10L1A

    2SB1015

    Abstract: IC 4025
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1015 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 10.3MAX. FEATURES: . Low Collector Saturation Voltage = VcE sat =-1.7V(Max.) at IC=-3A, IB=-0.3A . Collector Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SD1406


    OCR Scan     		PDF 2SB1015 2SD1406 -50mA, 2SB1015 IC 4025

    2SB1016

    Abstract: 1C13MAX
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1016 POWER AMPLIFIER APPLICATIONS. Unit in mm 1C13MAX. 0z.2±az FEATURES: . High Breakdown Voltage : V -.gQ=-100V :i2 . Low Collector-Emitter Saturation Voltage : ^CE(sat =-2 .OV(Max.) . Complementary to 2SD1407 . Recommended for 30W High-Fidelity Audio Frequency


    OCR Scan     		PDF 2SB1016 1C13MAX. -100V 2SD1407 Q76-CU5 -50mA, 2SB1016 1C13MAX

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA "st 56C DI SCRETE/OPTO SILICON PNP TRIPLE DIFFUSED TYPE DE I TOc]?aSD DD073TS 07395 O T " 3 5 “/ ? 2SB1017 _ Unit in mm POWER AMPLIFIER APPLICATIONS. 1 0 . 3 MAX, 05.2±O.Z 7.0 FEATURES: Z1 . Good Linearity of hpE


    OCR Scan     		PDF DD073TS 2SB1017 2SD1408

    761b nec

    Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
    Text: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338


    OCR Scan     		PDF 2SB927 2SB739 2SB1010 2SA1705 2SB740 2SA684 2SB1035 2SB1041 2SA133S 2SA1313 761b nec 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SB686 761-B

    2SD1407

    Abstract: 2SB1016A toshiba 2sd1407 2SD1407A
    Text: TOSHIBA 2SB1016A TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE 2 S B 1 0 1 6A Unit in mm High Breakdown Voltage : V q e O = —100V Low Collector-Emitter Saturation Voltage : VCE s a t = -2-0V (Max.) Complementary to 2SD1407A


    OCR Scan     		PDF 2SB1016A --100V 2SD1407A 2SD1407 2SB1016A toshiba 2sd1407