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    2SB1019 Search Results

    2SB1019 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1019 Unknown Scan PDF
    2SB1019 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1019 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1019 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1019 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1019 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1019 Unknown Cross Reference Datasheet Scan PDF
    2SB1019 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1019 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB1019 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB1019 Toshiba TO-220 Package Transistors Scan PDF
    2SB1019 Toshiba Silicon PNP Transistor Scan PDF
    2SB1019-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1019-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SB1019 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1019

    Abstract: 2SD1412
    Text: JMnic Product Specification 2SB1019 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1412 APPLICATIONS ・High current switching applications ・Power amplifier applications PINNING PIN DESCRIPTION


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    PDF 2SB1019 O-220Fa 2SD1412 O-220Fa) 2SB1019 2SD1412

    2SB1019

    Abstract: 2SD1412
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1019 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.4V(Max)@IC= -4A ·Good Linearity of hFE ·Complement to Type 2SD1412 APPLICATIONS ·High current switching applications.


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    PDF 2SB1019 2SD1412 2SB1019 2SD1412

    2SB1019

    Abstract: 2SD1412
    Text: SavantIC Semiconductor Product Specification 2SB1019 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1412 APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING


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    PDF 2SB1019 O-220Fa 2SD1412 O-220Fa) 2SB1019 2SD1412

    2SB1019

    Abstract: 2sb101 2SD1412
    Text: Inchange Semiconductor Product Specification 2SB1019 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1412 APPLICATIONS ・High current switching applications ・Power amplifier applications


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    PDF 2SB1019 O-220Fa 2SD1412 O-220Fa) 2SB1019 2sb101 2SD1412

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2SB553Y

    Abstract: IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type •c Max A V(BR)CEO on fT *ON r hFE 'CBO Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) PD (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15


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    PDF 2SC3153 2SC3535 2SC3156 2SC3482 2SC3486 2SD1403 2SC3685 SDT17203 2SD1456 2SB553Y IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入


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    PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    ic 353

    Abstract: IC353
    Text: 2SB1019 SILICON PNP EPITAXIAL PLANAR TYPE INDUSTRIAL APPLICATIONS U nit in mm HIGH C U R R E N T SW ITC H IN G A PPLICA TIO N S. P O W E R AMPLIFIER A PP LIC A TIO N S. • • ? Low Collector Saturation Voltage : v CE sat = -0.4V (Max.) at Ic = -4 A Complementary to 2SD1412


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    PDF 2SB1019 2SD1412 ic 353 IC353

    Untitled

    Abstract: No abstract text available
    Text: 2SD1412 SILICON NPN TRIPLE DIFFUSED TYP E INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 10.3 MAX. POWER AMPLIFIER APPLICATIONS. 03.2±O. 2 FEATURES: . Low Saturation Voltage : VcE sat =0-4V(Max.) U s at Ic=4A . Complementary to 2SB1019


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    PDF 2SD1412 2SB1019

    g3je

    Abstract: 2SB1019
    Text: y 'j 3 >PNP=M fôf$ pcTM o -f 7f 2SB1019 ym > if I - o P ? v m títfjíh 3 3 : IC = - 7 A ? lä io a i± ^ 'ig ;^ 0 : VcE(sat) = - 0 .4 V ( f t *) ( I C = -4A ) 2SD1412 t 3 > 7 " 'J ^ > ? >; (; 4- 19 £ - f 0 ft*Æ :fê (T a = 25°C) Il 3 L' 5 3 •^ - X Psi m a


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    PDF 2SB1019 2SD14121 2-10L1A -50mA, 20//s g3je 2SB1019

    2SB1019

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1019 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1Q.3MAX, POWER AMPLIFIER APPLICATIONS. FEATURES: . Low Collector Saturation Voltage : VCE sat =-0.4V(Max.) at I c =-4A . Complementary to 2SD1412


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    PDF 2SB1019 2SD1412 2SB1019

    2SD1412

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1412 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1Q3MAX. POWER AMPLIFIER APPLICATIONS. 03.2±Q2 FEATURES: . Low Saturation Voltage : VcE sat = 0 •4 V ( M a x .) at Ic=4A . Complementary to 2SB1019


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    PDF 2SD1412 2SB1019 Q76-Q 2SD1412

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


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    PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346

    2SA1598

    Abstract: 2SA1622 2sa1612 2SA1586 2SA1763 2SB1220A 2sa1578 2SA1611 2sa162 bc 1602 l
    Text: 35 - m « Type No. a « Manuf. SANYO 2SA 1575 2SA 1576 □—A 2SA 1577 / 2SA 1579 □—A □—A □ —A 2SA 1584 □—A 2SA1784 □- A ¿ Ò D V ù Q 2SA 1578 ¿o n HOC nuu 2SA 1586 . 2SA 1587 , $ 2SA 1588 K 2 2SA 1589 h m 2SA 1590 E ft 2SA 1591 , E ft


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    PDF 2SA1483 2SA1622 2SA1586 2SA1611 2SB1218A 2SA1603 2SA1745 2SA1588 2SA1608 2SA1532 2SA1598 2sa1612 2SA1763 2SB1220A 2sa1578 2SA1611 2sa162 bc 1602 l

    2SD1412

    Abstract: 2SB1019 nhjt
    Text: TOSHIBA { D I S C R E T E / O P T 0> 9097250 TOSHIBA ~SÍ 56C { D ISCRETE/O PTO DE I ^ O T T E S O DOCmSM 07954 2SD1412 SILICON NPN TRIPLE DIFFUSEDTYPE Unit in tnm HIGH CURRENT SWITCHING APPLICATIONS.' POWER AMPLIFIER APPLICATIONS. FEATURES: IQ 3H A X .


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    PDF 2SD1412 2SB1019 c1Dc17ESD nhjt

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


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    PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


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    PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102

    2SD1383K

    Abstract: 2SD1402 2SD1407 2SD1416 2SD1390 2SD1376K 2SD1377K 2SD1378 2SD1379 2SD1380
    Text: - 246 - Ta=25cC, *Ep(äTc=25‘C TJ 2SD1376K 2SD1377K 2SD1378 2SD13792SD13S0 Cf — 2SD1381 2SD1382 2SD1383K 2SD1384 2SD1385 2SD139Q 2SD1391 2SD1392 2SD1394 2SD1395 2SD1396 2SD1397 2SD1398 2SD1399 □— A BÄ D— A n— A □— A O— A D — töT


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    PDF 2SD1376K 2SD1377K 2SD1378 2SD1379 2SD1380 2SD1381 2SD1382 2SD1383T0-3PB) 2SD1403 2-10L1A) 2SD1383K 2SD1402 2SD1407 2SD1416 2SD1390

    2SA1441

    Abstract: 2sA1441 nec 2SA1115 2SA1263 2SA1232 2SA1142 2SA1310 2SA1018 2SA1624 2SB1197K
    Text: 32 - tt 2 SA 1465 0 a 2SA 1466 B 2SA 1467 i ED M £ T y p e No. m 146 8 € Manuf. H » S ANYO 2SB698 2SA 2 SA 2SA 1471 1 474 1 47 5 1 47 6 = •;# ^ ^ = n ^ = # ft 2SA 1477 = 3 2SA 1478 = ;¥ H. ft 2SA 1479 2SA 1480 - ✓ J 2SA 1481 2SA 1482 2SA 1485 2 SA 1487


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    PDF 2SB698 2SA950 2SA1515 2SA1150 2SA1515S 2SA1298 2SB1197K 2SA1257 2SA1330 2SB792 2SA1441 2sA1441 nec 2SA1115 2SA1263 2SA1232 2SA1142 2SA1310 2SA1018 2SA1624 2SB1197K

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


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    PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIB A Sb 56C D ISC R ETE/O P TO SILICON NPN TRIPLE DIFFUSED TYPE DE 1 ^ 0^7550 Q D 0 7 ‘iS4 ü 79 54 D T - B Z - Û 9 _ 2 S 1 D 4 1 2 Unit in mra HIGH CURRENT SWITCHING APPLICATIONS.' 1Q 3M AX . POWER AMPLIFIER APPLICATIONS.


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    PDF 2SB1019 a76-ai5

    2SB1099

    Abstract: 1115a 2sB1098 NEC 2SA1441 2SB873 1116a 2SB927 2SA1770 2SA1283 nec 2SB1099
    Text: - « Type No. tt « Mamif. 2SB 1114 -• 2SB 1115 „ Hi TOSHIBA Z £ MITSUBISHI ZSA1213 2SB10Q1 2SB956 2SB1188 2SB1122 2SA12Q1 2SB1002 2SB766A 2SB1260 2SA1213 2SB1Q02 2SB766A 2SA1315 2SB1059 2SB621A 2SA1283 2SB1459 2SB621A 2SA1283 S S « 2SB 1117 ^ S « 2SB 1118


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    PDF 2SB1121 2SA1213 2SB1001 2SB956 2SB1188 2SB1122 2SA1201 2SB1002 2SB766A 2SB1260 2SB1099 1115a 2sB1098 NEC 2SA1441 2SB873 1116a 2SB927 2SA1770 2SA1283 nec 2SB1099